Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Pressure-Driven Polymorphic Transition, Emergent Insulator-To-Metal Transition, and Photoconductivity Switching in Violet Phosphorus

Polymorphic phase transition is an essential phenomenon in condensed matter that the physical properties of materials may undergo significant changes due to the structural transformation. Phase transition has thus become an important means and dimension for regulating material properties. Herein, this study demonstrates the pressure-induced multi-transition of both structure and physical properties in violet phosphorus, a novel phosphorus allotrope. Under compression, violet phosphorus undergoes sequential polymorphic phase transitions. Concomitant with the first phase transition, violet phosphorus exhibits emergent insulator-metal transition, superconductivity, and dramatic switching from positive to negative photoconductivity. Remarkably, the resistance of violet phosphorus shows a sudden drop of around 107 along with the phase transition. In addition, piezochromism from translucent red to opaque black and suppression of photoluminescence are observed upon compression. Of particular interest is that the sample irreversibly transforms into black phosphorus with a pronounced discrepancy in physical properties from the pristine violet phosphorus after decompression. The abundant polymorphic transitions and property changes in violet phosphorus have significant implications for designing novel pressure-responsive electronic/optoelectronic devices and exploring concealed polymorphic transition materials.

Quantitative Mid-infrared Photoluminescence Characterization of Black Phosphorus-Arsenic Alloys

Black phosphorus (bP) is a promising material for mid-infrared (mid-IR) optoelectronic applications, exhibiting high performance light emission and detection. Alloying bP with arsenic extends its operation toward longer wavelengths from 3.7 μm (bP) to 5 μm (bP3As7), which is of great practical interest. Quantitative optical characterizations are performed to establish black phosphorus-arsenic (bPAs) alloys optoelectronic quality. Anisotropic optical constants (refractive index, extinction coefficient, and absorption coefficient) of bPAs alloys from near-infrared to mid-IR (0.2-0.9 eV) are extracted with reflection measurements, which helps optical device design. Quantitative photoluminescence (PL) of bPAs alloys with different As concentrations are measured from room temperature to 77 K. PL quantum yield measurements reveal a 2 orders of magnitude decrease in radiative efficiency with increasing As concentration. An optical cavity is designed for bP3As7, which allows for up to an order of magnitude enhancement in the quantum yield due to the Purcell effect. Our comprehensive optical characterization provides the foundation for high performance mid-IR optical device design using bPAs alloys.

Flexible and Ultra Low Weight Energy Harvesters Based on 2D Phosphorene or Black phosphorus (BP): Current and Futuristic Prospects

Phosphorene, or two-dimensional (2D) black phosphorus, has recently emerged as a competitor of graphene as it offers several advantages, including a tunable band gap, higher on/off current ratio, piezoelectric nature, and biocompatibility. Researchers have succeeded in obtaining several forms of phosphorene, such as nanosheets, nanorods, nanoribbons, and quantum dots, with satisfactory yields. Nanostructures with various controlled properties have been fabricated in multiple devices for energy production. These phosphorene-based devices are lightweight, flexible, and efficient, demonstrating great potential for energy-harvesting applications in sensors and nanogenerators. While ongoing exploration and advancements continue for these lightweight energy harvesters, it is essential to review the current progress in order to develop a future roadmap for the potential use of these phosphorene-based energy harvesters in space programs. They could be employed in applications such as wearable devices for astronauts, where ultralow weight is a vital component of any integrated device. This review also anticipates the growing significance of phosphorene in various emerging applications such as robots, information storage devices, and artificial intelligence.

Imaging Ultrafast Dynamics of Pressure-Driven Phase Transitions in Black Phosphorus and Anomalous Coherent Phonon Softening

Applying high pressure to effectively modulate the electronic and lattice structures of materials could unravel various physical properties associated with phase transitions. In this work, high-pressure-compatible femtosecond pump-probe microscopy was constructed to study the pressure-dependent ultrafast dynamics in black phosphorus (BP) thin films. We observed pressure-driven evolution of the electronic topological transition and three structural phases as the pressure reached ∼22 GPa, which could be clearly differentiated in the transient absorption images containing spatially resolved ultrafast carrier and coherent phonon dynamics. Surprisingly, an anomalous coherent acoustic phonon mode with pressure softening behavior was observed within the range of ∼3-8 GPa, showing distinct laser power and time dependences. Density functional theory calculations show that this mode, identified as the shear mode along the armchair orientation, gains significant electron-phonon coupling strength from out-of-plane compression that leads to decreased phonon frequency. Our results provide insights into the structure evolution of BP with pressure and hold potential for applications in microelectromechanical devices.

Probing Anisotropic Deformation and Near-Infrared Emission Tuning in Thin-Layered InSe Crystal under High Pressure

Indium selenide (InSe) exhibits high lattice compressibility and an extraordinary capability of tailoring the optical band gap under pressure beyond other 2D materials. Herein, by applying hydrostatic pressure via a diamond anvil cell, we revealed an anisotropic deformation dynamic and efficient manipulation of near-infrared light emission in thin-layered InSe strongly correlated to layer numbers (N = 5-30). As N > 20, the InSe lattice is compressed in all directions, and the intralayer compression leads to widening of the band gap, resulting in an emission blue shift (∼120 meV at 1.5 GPa). In contrast, as N ≤ 15, an efficient emission red shift is observed from band gap shrinkage (rate of 100 meV GPa^-1), which is attributed to the predominant uniaxial interlayer compression because of the high strain resistance along the InSe-diamond interface. These findings advance the understanding of pressure-induced lattice deformation and optical transition evolution in InSe and could be applied to other 2D materials.

Reconfiguring band-edge states and charge distribution of organic semiconductor-incorporated 2D perovskites via pressure gating

Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor-incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical-rather than chemical or thermal-regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a "pressure gating" strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.

Tunneling Magnetoresistance Transition and Highly Sensitive Pressure Sensors Based on Magnetic Tunnel Junctions with a Black Phosphorus Barrier

Black phosphorus is a promising material to serve as a barrier for magnetic tunnel junctions (MTJs) due to weak van der Waals interlayer interactions. In particular, the special band features of black phosphorus may endow intriguing physical characteristics. Here we study theoretically the effect of band gap tunability of black phosphorus on the MTJs with the black phosphorus barrier. It is found that the tunneling magnetoresistance (TMR) may transition from a finite value to infinity owing to the variation in the band gap of black phosphorus. Combined with the latest experimental results of the pressure-induced band gap tunability, we further investigate the pressure effect of TMR in the MTJs with a black phosphorus barrier. The calculations show that the pressure sensitivity can be quite high under appropriate parameters. Physically, the high sensitivity originates from the TMR transition phenomenon. To take advantage of the high pressure sensitivity, we propose and design a detailed structure of highly sensitive pressure sensors based on MTJs with a black phosphorus barrier, whose working mechanism is basically different from that of convential pressure sensors. The present pressure sensors possess four advantages and benifits: (1) high sensitivity, (2) good anti-interference, (3) high spatial resolution, and (4) fast response speed. Our study may advance new research areas for both the MTJs and pressure sensors.

Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing

γ-indium selenide (InSe) is a van der Waals semiconductor and holds great potentials for low-energy-consumption electronic and optoelectronic devices. Herein, we investigated the hydrostatic pressure engineered near-infrared (NIR) light emission of mechanically exfoliated γ-InSe crystals using the diamond anvil cell (DAC) technique. A record-wide spectral tuning range of 185 nm and a large linear pressure coefficient of 40 nm GPa^-1 were achieved for spontaneous emissions, leading to ultrabroadband microlasing spectrally ranging from 1022 to 911 nm. This high emission tunability can be attributed to the compression of the soft intralayer In-Se bonds under high pressure, which suppressed the band gap shrinkage by increasing the interlayer interaction. Furthermore, two band gap crossovers of valence (direct-to-indirect) and conduction bands were resolved at approximately 4.0 and 7.0 GPa, respectively, resulting in pressure-sensitive emission lifetime and intensity. These findings pave the pathways for pressure-sensitive InSe-based NIR light sources, sensors and so on.