Nonrelativistic Spin-Momentum Coupling in Antiferromagnetic Twisted Bilayers

Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

As an emerging magnetic phase, altermagnets with compensated magnetic order and nonrelativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley polarization in altermagnets; however, achieving controllable switching of valley polarization is extremely challenging. Herein, combined with the tight-binding model and first-principles calculations, we propose that interlayer sliding can be used to successfully induce and effectively manipulate the large valley polarization in altermagnets. Using the Fe2MX4 (M = Mo, W; X = S, Se, or Te) family as examples, we predict that sliding-induced ferrovalley states in such systems can exhibit many unique properties, including the linearly optical dichroism that is independent of spin-orbit coupling and the anomalous valley Hall effect. These findings imply the correlation among spin, valley, layer, and optical degrees of freedom that makes altermagnets attractive in spintronics, valleytronics, and even their crossing areas.

Tunable Quantum Anomalous Hall Effect via Crystal Order in Spin-Splitting Antiferromagnets

The quantum anomalous Hall (QAH) effect provides dissipationless channels for spin transport, which is highly expected for low-power quantum computation. Spin-splitting bands are vital for the QAH effect in topological systems, with ferromagnetism indispensable to manipulate the Chern number. Crystal-order-dependent QAH effects in spin-splitting antiferromagnets are proposed here. Since the spin splitting of these antiferromagnets originates from the alternate crystal environment, the Chern number can be modulated by the crystal order, opening an additional dimension for tuning the QAH effect. Our concept is illustrated by two-dimensional (2D) MnBi2Te4 (MBT) with even septuple layers, typical axion insulators with fully magnetic compensation. By interlayer rotation and translation operations, sublattices of MBT with opposite magnetizations are no longer connected by inversion or mirror symmetries, leading to the transition to QAH insulators. Flexible stacking of 2D materials enables a reversible Chern number by crystal design. Our findings would advance QAH effect-based devices toward high controllability, integration density, and operation speed.

Interface phonon transport in nanomaterials: numerical methods and modulation strategies

The thermal properties of interfaces in nanomaterials are critical for various technological applications, including thermal management in electronic and photonic devices, thermoelectric conversion and thermal insulation. Recent advancements in numerical simulation tools (the non-equilibrium Green's approach, the Boltzmann transport equation and the Monte Carlo method, molecular dynamics simulations) have significantly enhanced our understanding of phonon transport and scattering processes in nanomaterials. These advances have led to the discovery of new thermal interfacial materials and enabled precise modulation of phonon thermal conductance to achieve desired thermal performance. This review summarizes recent research progress in interface thermal transport, focusing on intriguing heat phenomena such as finite size effect and phonon coherent property. Additionally, it discusses strategies for modulating thermal conductance through disorder and roughness. Finally, the review proposes the opportunities and challenges associated with modulating interface thermal transport.

General Stacking Theory for Altermagnetism in Bilayer Systems

Two-dimensional (2D) altermagnetism was recently proposed to be attainable in twisted antiferromagnetic bilayers providing an experimentally feasible approach to realize it in 2D materials. Nevertheless, a comprehensive understanding of the mechanism governing the appearance of altermagnetism in bilayer systems is still absent. In the present Letter, we address this gap by introducing a general stacking theory (GST) as a key condition for the emergence of altermagnetism in bilayer systems. The GST provides straightforward criteria to predict whether a bilayer demonstrates altermagnetic spin splitting, solely based on the layer groups of the composing monolayers. According to the GST, only seven point groups of bilayers facilitate the emergence of altermagnetism. It is revealed that, beyond the previously proposed antiferromagnetic twisted Van der Waals stacking, altermagnetism can even emerge in bilayers formed through the symmetrically restricted direct stacking of two monolayers. By combining the GST and first-principles calculations, we present illustrative examples of bilayers demonstrating altermagnetism. Our work establishes a robust framework for designing diverse bilayer systems with altermagnetism, thereby opening up new avenues for both fundamental research and practical applications in this field.

Valley-Related Multipiezo Effect and Noncollinear Spin Current in an Altermagnet Fe2Se2O Monolayer

An altermagnet exhibits many novel physical phenomena because of its intrinsic antiferromagnetic coupling and natural band spin splitting, which are expected to give rise to new types of magnetic electronic components. In this study, an Fe2Se2O monolayer is proven to be an altermagnet with out-of-plane magnetic anisotropy, and its Néel temperature is determined to be 319 K. The spin splitting of the Fe2Se2O monolayer reaches 860 meV. Moreover, an Fe2Se2O monolayer presents a pair of energy valleys, which can be polarized and reversed by applying uniaxial strains along different directions, resulting in a piezovalley effect. Under the strain, the net magnetization can be induced in the Fe2Se2O monolayer by doping with holes, thereby realizing a piezomagnetic property. Interestingly, noncollinear spin current can be generated by applying an in-plane electric field on an unstrained Fe2Se2O monolayer doped with 0.2 hole/formula unit. These excellent physical properties make the Fe2Se2O monolayer a promising candidate for multifunctional spintronic and valleytronic devices.

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Antiferromagnetic spintronics1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials3,4. Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Spin Polarization Enhances the Catalytic Activity of Monolayer MoSe2 for Oxygen Reduction Reaction

The key factors in achieving high energy efficiency for proton exchange membrane fuel cells are reducing overpotential and increasing the oxygen reduction rate. Based on first-principles calculations, we induce H atom adsorption on 4 × 4 × 1 monolayer MoSe2 to induce spin polarization, thereby improving the catalytic performance. In the calculation of supercells, the band unfolding method is used to address the band folding effect in doped systems. Furthermore, it is evident from analyzing the unique energy band configuration of MoSe2 that a higher valley splitting value has better catalytic effects on the oxygen reduction reaction. We believe that the symmetries of the distinct adsorption site result in different overpotentials. In addition, when an even number of hydrogen atoms is adsorbed, the monolayer MoSe2 has no spin polarization. The spin can affect the electron transfer process and alter the hybrid energy with the reaction products, thereby regulating its catalytic performance.

Nitrogen-doped hollow carbon sphere composite Mn3O4 as an advanced host for lithium-sulfur battery

As the most promising advanced energy storage system, lithium-sulfur batteries (LSBs) are highly favored by the researchers because of their advantages of high energy density (2500 W h kg-1), low cost and non-pollution. However, the low conductivity, volume expansion of sulfur, and shuttle effect are still the great hindrance to the practical application of LSBs. Herein, the above problems can be addressed through the following strategies: (1) Hollow carbon microspheres with high specific surface area were constructed as sulfur hosts to increase sulfur loading while also being able to enhance the physical adsorption of polysulfides; (2) the loading of Mn3O4 particles on the basis of hollow carbon microspheres facilitates the capture and adsorption of polysulfides; (3) the hollow carbon sphere structure as a conductive network can provide more pathways for rapid electrical/ionic transport and also accelerate electrolyte wetting. Moreover, the thinner shell of hollow carbon microsphere is conducive to ion diffusion and speed up the reaction rate. Thus, the NHCS/Mn3O4/S composites exhibit a high discharge specific capacity of 1010.3 mAh g-1 at first and still maintained a reversible capacity of 269.2 mAh g-1 after 500 cycles. This work presents a facile sustainable and efficient synergistic strategy for the development of advanced LSBs.

A bicomponent synergistic MoxW1-xS2/aluminum nitride vdW heterojunction for enhanced photocatalytic hydrogen evolution: a first principles study

The coupling of two-dimensional van der Waals heterojunctions is an effective way to achieve photocatalytic hydrogen production. This paper designs the MoxW1-xS2/AlN (x = 0, 0.25, 0.5, 0.75, 1) van der Waals heterojunction as a possible photocatalytic material. By using first-principles calculations, the effects of different Mo/W ratios on the band gap and photocatalytic hydrogen production performance of heterojunctions were investigated. The results show that the heterojunction is a direct Z-scheme photocatalyst and can achieve overall water splitting. By calculating the absorption spectrum, it is found that the heterojunction has a wider visible light absorption range when the bimetal is added, and there is still a strong absorption peak at 615 nm. With the increase of the Mo atom ratio, the absorption spectrum is red-shifted. The Gibbs free energy of the two-component Mo0.5W0.5S2/AlN heterojunction is only -0.028 eV. Our work provides a new perspective for the modification of 2D transition metal dichalcogenide photocatalytic heterojunctions.

A Review of Ultrathin Piezoelectric Films

Due to their high electromechanical coupling and energy density properties, ultrathin piezoelectric films have recently been intensively studied as key materials for the construction of miniaturized energy transducers, and in this paper we summarize the research progress. At the nanoscale, even a few atomic layers, ultrathin piezoelectric films have prominent shape anisotropic polarization, that is, in-plane polarization and out-of-plane polarization. In this review, we first introduce the in-plane and out-of-plane polarization mechanism, and then summarize the main ultrathin piezoelectric films studied at present. Secondly, we take perovskite, transition metal dichalcogenides, and Janus layers as examples to elaborate the existing scientific and engineering problems in the research of polarization, and their possible solutions. Finally, the application prospect of ultrathin piezoelectric films in miniaturized energy converters is summarized.