Pseudo-gap at the Fermi level in K3C60 observed by photoemission and inverse photoemission

Static versus dynamically polarizable environments within the many-body GW formalism

Continuum- or discrete-polarizable models for the study of optoelectronic processes in embedded subsystems rely mostly on the restriction of the surrounding electronic dielectric response to its low frequency limit. Such a description hinges on the assumption that the electrons in the surrounding medium react instantaneously to any excitation in the central subsystem, thus treating the environment in the adiabatic limit. Exploiting a recently developed embedded GW formalism with an environment described at the fully ab initio level, we assess the merits of the adiabatic limit with respect to an environment where the full dynamics of the dielectric response are considered. Furthermore, we show how to properly take the static limit of the environment's susceptibility by introducing the so-called Coulomb-hole and screened-exchange contributions to the reaction field. As a first application, we consider a C60 molecule at the surface of a C60 crystal, namely, a case where the dynamics of the embedded and embedding subsystems are similar. The common adiabatic assumption, when properly treated, generates errors below 10% on the polarization energy associated with frontier energy levels and associated energy gaps. Finally, we consider a water molecule inside a metallic nanotube, the worst case for the environment's adiabatic limit. The error on the gap polarization energy remains below 10%, even though the error on the frontier orbital polarization energies can reach a few tenths of an electronvolt.

Many-body GW calculations with very large scale polarizable environments made affordable: A fully ab initio QM/QM approach

We present a many-body GW formalism for quantum subsystems embedded in discrete polarizable environments containing up to several hundred thousand atoms described at a fully ab initio random phase approximation level. Our approach is based on a fragment approximation in the construction of the Green's function and independent-electron susceptibilities. Further, the environing fragments susceptibility matrices are reduced to a minimal but accurate representation preserving low order polarizability tensors through a constrained minimization scheme. This approach dramatically reduces the cost associated with inverting the Dyson equation for the screened Coulomb potential W, while preserving the description of short to long-range screening effects. The efficiency and accuracy of the present scheme is exemplified in the paradigmatic cases of fullerene bulk, surface, subsurface, and slabs with varying number of layers.

Evidence for Band Renormalizations in Strong-Coupling Superconducting Alkali-Fulleride Films

There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fullerides. In this Letter, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K_{3}C_{60} thin films. We observe a dispersive energy band crossing the Fermi level with the occupied bandwidth of about 130 meV. The measured band structure shows prominent quasiparticle kinks and a replica band involving the Jahn-Teller active phonon modes, which reflects strong electron-phonon coupling in the system. The electron-phonon coupling constant is estimated to be about 1.2, which dominates the quasiparticle mass renormalization. Moreover, we observe an isotropic nodeless superconducting gap beyond the mean-field estimation (2Δ/k_{B}T_{c}≈5). Both the large electron-phonon coupling constant and large reduced superconducting gap suggest a strong-coupling superconductivity in K_{3}C_{60}, while the electronic correlation effect is suggested by the observation of a waterfall-like band dispersion and the small bandwidth compared with the effective Coulomb interaction. Our results not only directly visualize the crucial band structure but also provide important insights into the mechanism of the unusual superconductivity of fulleride compounds.

The relationship between the coherent size, binding energy and dissociation dynamics of charge transfer excitons at organic interfaces

At organic semiconductor interfaces, an electron and a hole can be bound Coulombically to form an interfacial charge transfer (CT) exciton. It is still under debate how a CT exciton can overcome its strong binding and dissociate into free carriers. Experimentally, capturing the evolution of the CT exciton on time (fs-ps) and length scales (nm) in which the dissociation process occurs is challenging. To overcome this challenge, time-resolved two photon photoemission spectroscopy is used to measure the binding energies and electronic coherent sizes of a series of CT states at organic interfaces, and capture the temporal dynamics of these CT excitons after their excitation. Using zinc phthalocyanine (ZnPc)/fullerene (C₆₀) interface as a model system, it is shown that the interfacial CT process first populates a hot CT state with a coherent size of ~4 nm. Hot and delocalized CT excitons subsequently relax into CT excitons with lower energies and smaller coherent sizes. To correlate the CT exciton properties with the dissociation efficiency, we develop a method that exploits graphene field effect transistors to probe the rate and yield of free carrier generation at the interface. Our results show that exciton dissociation can be more efficient if one can extract electrons from the hot and delocalized CT state. We propose a cascade structure that would serve this purpose.

Spectroscopic mapping and selective electronic tuning of molecular orbitals in phosphorescent organometallic complexes - a new strategy for OLED materials

The improvement of molecular electronic devices such as organic light-emitting diodes requires fundamental knowledge about the structural and electronic properties of the employed molecules as well as their interactions with neighboring molecules or interfaces. We show that highly resolved scanning tunneling microscopy (STM) and spectroscopy (STS) are powerful tools to correlate the electronic properties of phosphorescent complexes (i.e., triplet emitters) with their molecular structure as well as the local environment around a single molecule. We used spectroscopic mapping to visualize several occupied and unoccupied molecular frontier orbitals of Pt(II) complexes adsorbed on Au(111). The analysis showed that the molecules exhibit a peculiar localized strong hybridization that leads to partial depopulation of a dz² orbital, while the ligand orbitals are almost unchanged. We further found that substitution of functional groups at well-defined positions can alter specific molecular orbitals without influencing the others. The results open a path toward the tailored design of electronic and optical properties of triplet emitters by smart ligand substitution, which may improve the performance of future OLED devices.

Geometric and Electronic Structure of Fullerene Film Growth as a Function of Coverage

We have employed scanning tunneling microscopy at room and low temperature, i.e. 300, 50, and 5 K, to study the epitaxy and growth of fullerene films on the noble-metal surfaces Ag(110) and Au(110). Initial island growth occurs on terrace sites away from substrate step edges. Particularly at low temperatures where the rotational and vibrational movements of the fullerene molecules are frozen in, different intra-molecular topographic patterns become visible in ordered films, which are characteristic of particular adsorption sites. Complementary tunneling spectroscopy and direct and inverse photoemission measurements reveal distinct differences between the first adsorbed monolayer and additional fullerene layers indicating differences in bonding and charge transfer. Our results are compared to theoretical calculations.