Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation

Antimony thin films demonstrate programmable optical nonlinearity

The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting yet not highly explored area of research beyond plasmonics. Even more importantly, the concept of an active metal that can undergo an optical nonvolatile transition has not been explored. Here, we demonstrate that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We show that these states, corresponding to the crystalline and amorphous phases of the metal, are stable at room temperature. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities and switching speed using single subpicosecond pulses. The simplicity of depositing a single metal portends its potential for use in any optoelectronic application where metallic conductors with an actively tunable state are important.

Thickness and optical constants calculation for chalcogenide-alkali metal Se80Te8(NaCl)12 thin film

Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se₈₀Te₈(NaCl)₁₂ are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease.

Unique Functional Micro/nano-structures Created by Femtosecond Laser Irradiation

Femtosecond (fs) laser application in three-dimensional (3D) optical recording is introduced. The laser irradiation on transparent glass and polymer matrix doped with fluorescent material is carried out, which changes the physical or chemical properties of the recording media and records information bits. With the change of the focusing positions inside the transparent substrates, 3D optical recording can be available for ultrahigh capacity data storage. Feasibility on fs laser drilling of poly-caprolactone (PCL) thin films for tissue engineering is investigated. It is found that precisely defined micro-hole arrays can be formed on the sample surfaces. Hydrophilic property of the processed samples is much improved, which provides good conditions for tissue cells to anchor on the man-made skin. Fs laser applications to form nanostructures on substrate surfaces are studied. Fs laser combination with near-field scanning optical microscopy (NSOM) to induce surface property modification in the sub 50-nm under NSOM tip and nanoparticles is also discussed.

Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film

Ultrafast pulsed laser irradiation is demonstrated to be able to produce surface nano-structuring and simultaneous crystallization of amorphous silicon thin film in one step laser processing. After fs laser irradiation on 80 nm-thick a-Si deposited on Corning 1737 glass substrate, the color change from light yellow to dark brown was observed on the sample surface. AFM images show that the surface nano-spike pattern was produced on amorphous-Si:H film by fs laser irradiation. Furthermore, micro-Raman results indicate that the a-Si has been crystallized into nanocrystalline Si. Also, the absorptance of the fs laser treated Si thin film was found to increase in the spectrum range of below bandgap compared to original untreated a-Si. The developed process has a potential application in fabrication of high efficiency Si thin film solar cells.

Ultrafast laser-induced phase transitions in amorphous GeSb films

Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from that of the crystalline phase, contrary to previous suggestions of a disorder-to-order transition. The observed dielectric function is close to that of the liquid phase, indicating an ultrafast transition from the amorphous phase to a different disordered state.