Insulating and fractional quantum hall states in the first excited Landau level

Higher Vortexability: Zero-Field Realization of Higher Landau Levels

The rise of moiré materials has led to experimental realizations of integer and fractional Chern insulators in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee an Abelian fractional state in a flat band were identified, namely, "ideal" or "vortexable" quantum geometry. Such vortexable bands share essential features with the lowest Landau level (LL), while excluding the need for more fine-tuned aspects such as flat Berry curvature. A natural and important generalization is to ask if such conditions can be extended to capture the quantum geometry of higher Landau levels, particularly the first LL (1LL), where non-Abelian states at ν=1/2,2/5 are known to be competitive. The possibility of realizing these states at zero magnetic field, and perhaps even more exotic ones, could become a reality if we could identify the essential structure of the 1LL in Chern bands. In this work, we introduce a precise definition of 1LL quantum geometry, along with a figure of merit that measures how closely a given band approaches the 1LL. Periodically strained Bernal graphene is shown to realize such a 1LL structure even in zero magnetic field.

Extended quantum anomalous Hall states in graphene/hBN moiré superlattices

Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK (ref. 1), triggering discussions around the underlying mechanism and role of moiré effects2-6. In particular, new electron crystal states with non-trivial topology have been proposed3,4,7-15. Here we report electrical transport measurements in rhombohedral pentalayer and tetralayer graphene/hBN moiré superlattices at electronic temperatures down to below 40 mK. We observed two more fractional quantum anomalous Hall (FQAH) states and smaller Rxx values in pentalayer devices than those previously reported. In the new tetralayer device, we observed FQAHE at moiré filling factors v = 3/5 and 2/3. With a small current at the base temperature, we observed a new extended quantum anomalous Hall (EQAH) state and magnetic hysteresis, where Rxy = h/e2 and vanishing Rxx spans a wide range of v from 0.5 to 1.3. At increased temperature or current, EQAH states disappear and partially transition into the FQAH liquid16-18. Furthermore, we observed displacement field-induced quantum phase transitions from the EQAH states to the Fermi liquid, FQAH liquid and the likely composite Fermi liquid. Our observations established a new topological phase of electrons with quantized Hall resistance at zero magnetic field and enriched the emergent quantum phenomena in materials with topological flat bands.

Evidence for Topological Protection Derived from Six-Flux Composite Fermions

The composite fermion theory opened a new chapter in understanding many-body correlations through the formation of emergent particles. The formation of two-flux and four-flux composite fermions is well established. While there are limited data linked to the formation of six-flux composite fermions, topological protection associated with them is conspicuously lacking. Here we report evidence for the formation of a quantized and gapped fractional quantum Hall state at the filling factor ν = 9/11, which we associate with the formation of six-flux composite fermions. Our result provides evidence for the most intricate composite fermion with six fluxes and expands the already diverse family of highly correlated topological phases with a new member that cannot be characterized by correlations present in other known members. Our observations pave the way towards the study of higher order correlations in the fractional quantum Hall regime.

Dynamic ordering transitions in charged solid

The phenomenon of group motion is common in nature, ranging from the schools of fish, birds and insects, to avalanches, landslides and sand drift. If we treat objects as collectively moving particles, such phenomena can be studied from a physical point of view, and the research on many-body systems has proved that marvelous effects can arise from the simplest individuals. The motion of numerous individuals presents different dynamic phases related to the ordering of the system. However, it is usually difficult to study the dynamic ordering and its transitions through experiments. Electron bubble states formed in a two-dimensional electron gas, as a type of electron solids, can be driven by an external electric field and provide a platform to study the dynamic collective behaviors. Here, we demonstrate that the noise spectrum is a powerful method to investigate the dynamics of bubble states. We observed not only the phenomena of dynamically ordered and disordered structures, but also unexpected alternations between them. Our results show that a dissipative system can convert between chaotic structures and ordered structures when tuning global parameters, which is concealed in conventional transport measurements of resistance or conductance. Moreover, charging the objects to study the electrical noise spectrum in collective motions can be an additional approach to revealing dynamic ordering transitions.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Realization of Supersymmetry and Its Spontaneous Breaking in Quantum Hall Edges

Supersymmetry (SUSY) relating bosons and fermions plays an important role in unifying different fundamental interactions in particle physics. Since no superpartners of elementary particles have been observed, SUSY, if present, must be broken at low-energy. This makes it important to understand how SUSY is realized and broken, and study their consequences. We show that an N=(1,0) SUSY, arguably the simplest type, can be realized at the edge of the Moore-Read quantum Hall state. Depending on the absence or presence of edge reconstruction, both SUSY-preserving and SUSY broken phases can be realized in the same system, allowing for their unified description. The significance of the gapless fermionic Goldstino mode in the SUSY broken phase is discussed.

Ultra-high-quality two-dimensional electron systems

Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interactions. Many key observations have been made in these systems as sample quality has improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of 44 × 10⁶ cm² V^-1 s^-1 at an electron density of 2.0 × 10¹¹ cm^-2. These results imply only 1 residual impurity for every 10¹⁰ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe and bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap (Δ) of the fractional quantum Hall state at the Landau-level filling (ν) = 5/2, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches Δ ≈ 820 mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and substantially advance the field.

Hidden Quantum Hall Stripes in Al_{x}Ga_{1-x}As/Al_{0.24}Ga_{0.76}As Quantum Wells

We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high (N>2) half-filled Landau levels of Al_{x}Ga_{1-x}As/Al_{0.24}Ga_{0.76}As quantum wells with varying Al mole fraction x<10^{-3}. Residing between the conventional stripe phases (lower N) and the isotropic liquid phases (higher N), where resistivity decreases as 1/N, these hQHS phases exhibit isotropic and N-independent resistivity. Using the experimental phase diagram, we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells but are likely to be found in other systems.

TiO2-SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials

The review embraces a number of research papers concerning the fabrication of oxide thermoelectric systems, with TiO2-SrTiO3 biphase ceramics being emphasized. The ceramics is particularly known for a two-dimensional electron gas (2DEG) forming spontaneously on the TiO2/SrTiO3 heterointerface (modulation doping), unlike ordinary 2DEG occurrence on specially fabricated thin film. Such effect is provided by the SrTiO3 conduction band edge being 0.40 and 0.20 eV higher than that for anatase and rutile TiO2, respectively. That is why, in the case of a checkered arrangement of TiO2 and SrTiO3 grains, the united 2D net is probably formed along the grain boundaries with 2DEG occurring there. To reach such conditions, there should be applied novelties in the field of ceramics materials science, because it is important to obtain highly dense material preserving small (nanoscale) grain size and thin interface boundary. The review also discusses some aspects of reactive spark plasma sintering as a promising method of preparing perovskite-oxide TiO2-SrTiO3 thermoelectric materials for high-temperature applications.

Disorder-Driven Transition in the ν=5/2 Fractional Quantum Hall Effect

The fractional quantum Hall (FQH) effect at the filling number ν=5/2 is a primary candidate for non-Abelian topological order, while the fate of such a state in the presence of random disorder has not been resolved. We address this open question by implementing an unbiased diagnosis based on numerical exact diagonalization. We calculate the disorder averaged Hall conductance and the associated statistical distribution of the topological invariant Chern number, which unambiguously characterize the disorder-driven collapse of the FQH state. As the disorder strength increases towards a critical value, a continuous phase transition is detected based on the disorder configuration averaged wave function fidelity and the entanglement entropy. In the strong disorder regime, we identify a composite Fermi liquid phase with fluctuating Chern numbers, in striking contrast to the well-known ν=1/3 case where an Anderson insulator appears. Interestingly, the lowest Landau level projected a local density profile, the wave function overlap, and the entanglement entropy as a function of disorder strength simultaneously signal an intermediate phase, which may be relevant to the recent proposal of a particle-hole Pfaffian state or Pfaffian-anti-Pfaffian puddle state.

High-Quality Magnetotransport in Graphene Using the Edge-Free Corbino Geometry

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation together with a dual-graphite gate structure. Bulk conductance measurement in the quantum Hall effect (QHE) regime outperforms previously reported Hall bar measurements, with improved resolution observed for both the integer and fractional QHE states. We identify apparent phase transitions in the fractional sequence in both the lowest and first excited Landau levels (LLs) and observe features consistent with electron solid phases in higher LLs.

Piezo-driven sample rotation system with ultra-low electron temperature

Piezo-driven rotator is convenient for tilted magnetic field experiments due to its precise angle control. However, the rotator itself and the sample mounted on it are difficult to be cooled down because of extra heat leaks and presumably bad thermal contacts from the piezo. Here, we report a piezo-driven sample rotation system designed for ultra-low temperature environment. The sample, as well as the rotating sample holder, can be cooled to as low as 25 mK by customized thermal links and thermal contacts. More importantly, the electron temperature in the electrical transport measurements can also be cooled down to 25 mK with the help of home-made filters. To demonstrate the application of our rotation system at ultra-low electron temperature, a measurement revealing tilt-induced localization and delocalization in the second Landau level of two-dimensional electron gas is provided.

Competing Fractional Quantum Hall and Electron Solid Phases in Graphene

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N=2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the B-T phase diagram of the electron solid phase. The hierarchy of reentrant states suggests spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.

Unconventional Anisotropic Even-Denominator Fractional Quantum Hall State in a System with Mass Anisotropy

The fractional quantum Hall state (FQHS) observed at a half-filled Landau level in an interacting two-dimensional electron system (2DES) is among the most exotic states of matter as its quasiparticles are expected to be Majorana excitations with non-Abelian statistics. We demonstrate here the unexpected presence of such a state in a novel 2DES with a strong band-mass anisotropy. The FQHS we observe has unusual characteristics. While its Hall resistance is well quantized at low temperatures, it exhibits highly anisotropic in-plane transport resembling compressible stripe or nematic charge-density-wave phases. More striking, the anisotropy sets in suddenly below a critical temperature, suggesting a finite-temperature phase transition. Our observations highlight how anisotropy modifies the many-body phases of a 2DES, and should further fuel the discussion surrounding the enigmatic even-denominator FQHS.

Electron-electron interactions and the paired-to-nematic quantum phase transition in the second Landau level

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor ν = 5/2. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure-induced paired-to-nematic transition also develops at ν = 7/2, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg _x Zn[Formula: see text]O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility ([Formula: see text] cm² Vs^-1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Competing Charge Density Waves Probed by Nonlinear Transport and Noise in the Second and Third Landau Levels

Charge density waves (CDWs) in the second and third Landau levels (LLs) are investigated by both nonlinear electronic transport and noise. The use of a Corbino geometry ensures that only bulk properties are probed, with no contribution from edge states. Sliding transport of CDWs is revealed by narrow band noise in reentrant quantum Hall states R2a and R2c of the second LL, as well as in pinned CDWs of the third LL. Competition between various phases-stripe, pinned CDW, or fractional quantum Hall liquid-in both LLs are clearly revealed by combining noise data with maps of conductivity versus magnetic field and bias voltage.

Electron-Hole Asymmetric Chiral Breakdown of Reentrant Quantum Hall States

Reentrant integer quantum Hall (RIQH) states are believed to be correlated electron solid phases, although their microscopic description remains unclear. As bias current increases, longitudinal and Hall resistivities measured for these states exhibit multiple sharp breakdown transitions, a signature unique to RIQH states. A comparison of RIQH breakdown characteristics at multiple voltage probes indicates that these signatures can be ascribed to a phase boundary between broken-down and unbroken regions, spreading chirally from source and drain contacts as a function of bias current and passing voltage probes one by one. The chiral sense of the spreading is not set by the chirality of the edge state itself, instead depending on electron- or holelike character of the RIQH state.

Gap reversal at filling factors 3+1/3 and 3+1/5: towards novel topological order in the fractional quantum Hall regime

In the region of the second Landau level several theories predict fractional quantum Hall states with novel topological order. We report the opening of an energy gap at the filling factor ν=3+1/3, firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifically, we find that the relative magnitudes of the energy gaps of the ν=3+1/3 and 3+1/5 states from the upper spin branch are reversed when compared to the ν=2+1/3 and 2+1/5 counterpart states in the lower spin branch. Our findings raise the possibility that at least one of the former states is of an unusual topological order.

Recent experimental progress of fractional quantum Hall effect: 5/2 filling state and graphene

The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary charge. Three decades later, the field of FQHE is still active with new discoveries and new technical developments. A significant portion of attention in FQHE has been dedicated to filling factor 5/2 state, for its unusual even denominator and possible application in topological quantum computation. Traditionally, FQHE has been observed in high-mobility GaAs heterostructure, but new materials such as graphene also open up a new area for FQHE. This review focuses on recent progress of FQHE at 5/2 state and FQHE in graphene.

ν=5/2 fractional quantum Hall state in the presence of alloy disorder

We report quantitative measurements of the impact of alloy disorder on the ν = 5/2 fractional quantum Hall state. Alloy disorder is controlled by the aluminum content x in the Al(x)Ga(1-x)As channel of a quantum well. We find that the ν = 5/2 state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the ν = 5/2 state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.

Magnetic-field-tuned Aharonov-Bohm oscillations and evidence for non-Abelian anyons at ν = 5/2

We show that the resistance of the ν = 5/2 quantum Hall state, confined to an interferometer, oscillates with the magnetic field consistent with an Ising-type non-Abelian state. In three quantum Hall interferometers of different sizes, resistance oscillations at ν = 7/3 and integer filling factors have the magnetic field period expected if the number of quasiparticles contained within the interferometer changes so as to keep the area and the total charge within the interferometer constant. Under these conditions, an Abelian state such as the (3, 3, 1) state would show oscillations with the same period as at an integer quantum Hall state. However, in an Ising-type non-Abelian state there would be a rapid oscillation associated with the "even-odd effect" and a slower one associated with the accumulated Abelian phase due to both the Aharonov-Bohm effect and the Abelian part of the quasiparticle braiding statistics. Our measurements at ν = 5/2 are consistent with the latter.

The quantum Hall effect at 5/2 filling factor

Experimental discovery of a quantized Hall state at 5/2 filling factor presented an enigmatic finding in an established field of study that has remained an open issue for more than twenty years. In this review we first examine the experimental requirements for observing this state and outline the initial theoretical implications and predictions. We will then follow the chronology of experimental studies over the years and present the theoretical developments as they pertain to experiments, directed at sets of issues. These topics will include theoretical and experimental examination of the spin properties at 5/2; is the state spin polarized? What properties of the higher Landau levels promote development of the 5/2 state, what other correlation effects are observed there, and what are their interactions with the 5/2 state? The 5/2 state is not a robust example of the fractional quantum Hall effect: what experimental and material developments have allowed enhancement of the effect? Theoretical developments from initial pictures have promoted the possibility that 5/2 excitations are exceptional; do they obey non-abelian statistics? The proposed experiments to determine this and their executions in various forms will be presented: this is the heart of this review. Experimental examination of the 5/2 excitations through interference measurements will be reviewed in some detail, focusing on recent results that demonstrate consistency with the picture of non-abelian charges. The implications of this in the more general physics picture is that the 5/2 excitations, shown to be non-abelian, should exhibit the properties of Majorana operators. This will be the topic of the last review section.

Observation of reentrant integer quantum Hall states in the lowest Landau level

Measurements on very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal a close competition between the electron liquid and solid phases near the Landau level filling factor ν=1. As the density is raised, the fractional quantum Hall liquid at ν=4/5 suddenly disappears at a well-width dependent critical density, and then reappears at higher densities with insulating phases on its flanks. These insulating phases exhibit reentrant ν=1 integer quantum Hall effects and signal the formation of electron Wigner crystal states. Qualitatively similar phenomena are seen near ν=6/5.

Spin transition in the ν=8/3 fractional quantum Hall effect

We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings ν=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5×10(11) to 3×10(11) cm(-2), the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n~0.8×10(11) cm(-2), and then turns around and increases with increasing density, clearly demonstrating a spin transition.

Non-abelian quantum Hall effect in topological flat bands

Inspired by the recent theoretical discovery of robust fractional topological phases without a magnetic field, we search for the non-abelian quantum Hall effect in lattice models with topological flat bands. Through extensive numerical studies on the Haldane model with three-body hard-core bosons loaded into a topological flat band, we find convincing numerical evidence of a stable ν=1 bosonic non-abelian quantum Hall effect, with the characteristic threefold quasidegeneracy of ground states on a torus, a quantized Chern number, and a robust spectrum gap. Moreover, the spectrum for two-quasihole states also shows a finite energy gap, with the number of states in the lower-energy sector satisfying the same counting rule as the Moore-Read pfaffian state.

Collective nature of the reentrant integer quantum Hall states in the second Landau level

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

Impact of disorder on the 5/2 fractional quantum Hall state

We compare the energy gap of the ν = 5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

Numerical calculation of the neutral fermion gap at the ν=5/2 fractional quantum Hall state

We present the first numerical computation of the neutral fermion gap, Δ(F), in the ν=5/2 quantum Hall state, which is analogous to the energy gap for a Bogoliubov-de Gennes quasiparticle in a superconductor. We find Δ(F)≈0.027e(2)/εℓ(0), comparable to the charge gap. We also deduce an effective Fermi velocity v(F) for neutral fermions from the low-energy spectra for odd numbers of electrons, and thereby obtain a correlation length ξ(F)=v(F)/Δ(F)≈1.3ℓ(0). We comment on implications for experiments, topological quantum information processing, and electronic mechanisms of superconductivity.

Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4 mK.

Probing electron-electron interaction in quantum Hall systems with scanning tunneling spectroscopy

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled from bulk states and exhibits spreading resistance within the insulating quantum Hall phases. In quantitative agreement with calculations we find an exchange enhancement of the spin splitting. Moreover, we observe that both the spatially averaged as well as the local density of states feature a characteristic Coulomb gap at the Fermi level. These results show that electron-electron interaction can be probed down to a resolution below all relevant length scales.

Fractional quantum Hall effect at high fillings in a two-subband electron system

Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2, 3, 4 and p=1, 2, 3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.

Nonconventional odd-denominator fractional quantum Hall states in the second Landau level

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor ν=2+6/13. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.

Tilt-induced anisotropic to isotropic phase transition at ν = 5/2

A modest in-plane magnetic field B(∥) is sufficient to destroy the fractional quantized Hall states at ν = 5/2 and 7/2 and replace them with anisotropic compressible phases. Remarkably, we find that at larger B(∥) these anisotropic phases can themselves be replaced by isotropic compressible phases reminiscent of the composite fermion fluid at ν = 1/2. We present strong evidence that this transition is a consequence of the mixing of Landau levels from different electric subbands. We also report surprising dependences of the energy gaps at ν = 5/2 and 7/3 on the width of the confinement potential.

Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}as heterostructures

We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.

Nu = 5/2 fractional quantum Hall effect at 10 T: implications for the Pfaffian state

We report on the magnetotransport (including tilt fields) around Landau level filling factor nu=5/2 in a high-purity modulation-doped GaAs/AlGaAs quantum well with twice the electron density of standard samples. A quantized 5/2 Hall plateau is observed at B approximately = 10 T, with an activation gap approximately 125 mK; the plateau can persist up to approximately 25 degree tilt field. This finding is discussed in the context of a proposed Moore-Read Pfaffian (or anti-Pfaffian) wave function being a possible ground state at 5/2. The tilt fields induce a background resistance at 5/2 that could be either isotropic or anisotropic, depending simply on the in-plane magnetic field direction with respect to the GaAs crystalline axis. Such data indicate a substantial coupling between the 5/2 collective phases and the GaAs crystal.

Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry

Magnetotransport measurements on electrons confined to a 57-nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings (nu) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of 1.93 x 10;{11} cm;{-2}, a developing fractional quantum Hall state is observed at the even-denominator filling nu = 1/4 when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the nu = 1/5 fractional quantum Hall state.

Nonequilibrium transport through a point contact in the nu = 5/2 non-Abelian quantum Hall state

We analyze charge-e/4 quasiparticle tunneling between the edges of a point contact in a non-Abelian model of the nu = 5/2 quantum Hall state in the presence of a finite voltage difference using the time-dependent density-matrix renormalization group method. We confirm that, as the voltage decreases, the system is broken into two pieces. In the limits of small and large voltage, we recover the results expected from perturbation theory about the infrared and ultraviolet fixed points. We test our methods by finding the analogous nonequilibrium current through a point contact at nu = 1/3.

Multichannel Kondo models in non-Abelian quantum Hall droplets

We study the coupling between a quantum dot and the edge of a non-Abelian fractional quantum Hall state which is spatially separated from it by an integer quantum Hall state. Near a resonance, the physics at energy scales below the level spacing of the edge states of the dot is governed by a k-channel Kondo model when the quantum Hall state is a Read-Rezayi state at filling fraction nu=2+k/(k+2) or its particle-hole conjugate at nu=2+2/(k+2). The k-channel Kondo model is channel isotropic even without fine-tuning in the former state; in the latter, it is generically channel anisotropic. In the special case of k=2, our results provide a new venue, realized in a mesoscopic context, to distinguish between the Pfaffian and anti-Pfaffian states at filling fraction nu=5/2.

Intrinsic gap of the nu=5/2 fractional quantum Hall state

The fractional quantum Hall effect is observed at low magnetic field where the cyclotron energy is smaller than the Coulomb interaction energy. The nu=5/2 excitation gap at 2.63 T is measured to be 262+/-15 mK, similar to values obtained in samples with twice the electronic density. Examining the role of disorder on the 5/2 state, we find that a large discrepancy remains between theory and experiment for the intrinsic gap extrapolated from the infinite mobility limit. The observation of a 5/2 state in the low-field regime suggests that inclusion of nonperturbative Landau level mixing may be necessary to fully understand the energetics of half-filled fractional quantum Hall liquids.

Spin order in paired quantum Hall states

We consider quantum Hall states at even-denominator filling fractions, especially nu=5/2, in the limit of small Zeeman energy. Assuming that a paired quantum Hall state forms, we study spin ordering and its interplay with pairing. We give numerical evidence that at nu=5/2 an incompressible ground state will exhibit spontaneous ferromagnetism. The Ginzburg-Landau (GL) theory for the spin degrees of freedom of paired Hall states is a perturbed CP2 model. We compute the coefficients in the GL theory by a BCS Stoner mean-field theory for coexisting order parameters, and show that even if repulsion is smaller than that required for a Stoner instability, ferromagnetic fluctuations can induce a partially or fully polarized superconducting state.

Broken-symmetry states of Dirac fermions in graphene with a partially filled high Landau level

We report on numerical study of the Dirac fermions in partially filled N=3 Landau level (LL) in graphene. At half-filling, the equal-time density-density correlation function displays sharp peaks at nonzero wave vectors +/-q*. Finite-size scaling shows that the peak value grows with electron number and diverges in the thermodynamic limit, which suggests an instability toward a charge density wave. A symmetry broken stripe phase is formed at large system size limit, which is robust against perturbation from disorder scattering. Such a quantum phase is experimentally observable through transport measurements. Associated with the special wave functions of the Dirac LL, both stripe and bubble phases become possible candidates for the ground state of the Dirac fermions in graphene with lower filling factors in the N=3 LL.

Particle-hole symmetry and the nu=5/2 quantum Hall state

We discuss the implications of approximate particle-hole symmetry in a half-filled Landau level in which a paired quantum Hall state forms. We note that the Pfaffian state is not particle-hole symmetric. Therefore, in the limit of vanishing Landau-level mixing, in which particle-hole transformation is an exact symmetry, the Pfaffian spontaneously breaks this symmetry. There is a particle-hole conjugate state, which we call the anti-Pfaffian, which is degenerate with the Pfaffian in this limit. We observe that strong Landau-level mixing should favor the Pfaffian, but it is an open problem which state is favored for the moderate Landau-level mixing which is present in experiments. We discuss the bulk and edge physics of the anti-Pfaffian. We analyze a simplified model in which transitions between analogs of the two states can be studied in detail. Finally, we discuss experimental implications.

Non-Abelian anyon superconductivity

Non-Abelian anyons exist in certain spin models and may exist in quantum Hall systems at certain filling fractions. In this work, we studied the ground state of dynamical SU(2) level-kappa Chern-Simons non-Abelian anyons at finite density and no external magnetic field. We find that, in the large-kappa limit, the topological interaction induces a pairing instability and the ground state is a superconductor with d+id gap symmetry. We also develop a picture of pairing for the special value kappa=2 and argue that the ground state is a superfluid of pairs for all values of kappa.

Impact of spin-orbit coupling on quantum Hall nematic phases

Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for all temperatures. Isotropic hole transport at nu=7/2 is restored for sufficiently low 2D densities or an asymmetric confining potential. The density and symmetry dependences of the observed anisotropies suggest that strong spin-orbit coupling in the hole system contributes to the unusual transport behavior.

Astability and negative differential resistance of the Wigner solid

We report spontaneous narrow band oscillations in the high field Wigner solid. These oscillations are similar to the recently seen and yet unexplained oscillations in the reentrant integer quantum Hall states. The current-voltage characteristic has a region of negative differential resistance in the current biased setup and it is hysteretic in the voltage biased setup. As a consequence of the unusual breakdown, the oscillations in the Wigner solid are of the relaxation type.

Detecting non-Abelian statistics with an electronic Mach-Zehnder interferometer

Fractionally charged quasiparticles in the quantum Hall state with a filling factor nu=5/2 are expected to obey non-Abelian statistics. We demonstrate that their statistics can be probed by transport measurements in an electronic Mach-Zehnder interferometer. The tunneling current through the interferometer exhibits a characteristic dependence on the magnetic flux and a nonanalytic dependence on the tunneling amplitudes which can be controlled by gate voltages.