1
|
Corley-Wiciak C, Richter C, Zoellner MH, Zaitsev I, Manganelli CL, Zatterin E, Schülli TU, Corley-Wiciak AA, Katzer J, Reichmann F, Klesse WM, Hendrickx NW, Sammak A, Veldhorst M, Scappucci G, Virgilio M, Capellini G. Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device. ACS Appl Mater Interfaces 2023; 15:3119-3130. [PMID: 36598897 PMCID: PMC9869329 DOI: 10.1021/acsami.2c17395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/26/2022] [Accepted: 12/07/2022] [Indexed: 06/17/2023]
Abstract
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 μm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 × 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 × 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 μeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology.
Collapse
Affiliation(s)
- Cedric Corley-Wiciak
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Carsten Richter
- IKZ,
Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489Berlin, Germany
| | - Marvin H. Zoellner
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Ignatii Zaitsev
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Costanza L. Manganelli
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Edoardo Zatterin
- ESRF,
European Synchrotron Radiation Facility, 71, Avenue des Martyrs, CS 40220, 38043Grenoble Cedex 9, France
| | - Tobias U. Schülli
- ESRF,
European Synchrotron Radiation Facility, 71, Avenue des Martyrs, CS 40220, 38043Grenoble Cedex 9, France
| | - Agnieszka A. Corley-Wiciak
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Jens Katzer
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Felix Reichmann
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Wolfgang M. Klesse
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
| | - Nico W. Hendrickx
- QuTech
and Kavli Institute of Nanoscience, Delft
University of Technology, Lorentzweg 1, 2628
CJDelft, The Netherlands
| | - Amir Sammak
- QuTech
and Netherlands Organisation for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CKDelft, The Netherlands
| | - Menno Veldhorst
- QuTech
and Kavli Institute of Nanoscience, Delft
University of Technology, Lorentzweg 1, 2628
CJDelft, The Netherlands
| | - Giordano Scappucci
- QuTech
and Kavli Institute of Nanoscience, Delft
University of Technology, Lorentzweg 1, 2628
CJDelft, The Netherlands
| | - Michele Virgilio
- Department
of Physics Enrico Fermi, Università
di Pisa, Pisa56126, Italy
| | - Giovanni Capellini
- IHP,
Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, D-15236Frankfurt (Oder), Germany
- Dipartimento
di Scienze, Universita Roma Tre, Roma00146, Italy
| |
Collapse
|
2
|
Marks SD, Quan P, Liu R, Highland MJ, Zhou H, Kuech TF, Stephenson GB, Evans PG. Instrument for in situ hard x-ray nanobeam characterization during epitaxial crystallization and materials transformations. Rev Sci Instrum 2021; 92:023908. [PMID: 33648142 DOI: 10.1063/5.0039196] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicrometer characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO3/BaTiO3 multilayer illustrate implementation of this instrument.
Collapse
Affiliation(s)
- Samuel D Marks
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Peiyu Quan
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Rui Liu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - Matthew J Highland
- X-ray Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Hua Zhou
- X-ray Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Thomas F Kuech
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| | - G Brian Stephenson
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
| |
Collapse
|
3
|
Whitley W, Stock C, Huxley AD. A laboratory-based Laue X-ray diffraction system for enhanced imaging range and surface grain mapping. J Appl Crystallogr 2015; 48:1342-1345. [PMID: 26306095 PMCID: PMC4520294 DOI: 10.1107/s1600576715009097] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2014] [Accepted: 05/11/2015] [Indexed: 11/11/2022] Open
Abstract
Although CCD X-ray detectors can be faster to use, their large-area versions can be much more expensive than similarly sized photographic plate detectors. When indexing X-ray diffraction patterns, large-area detectors can prove very advantageous as they provide more spots, which makes fitting an orientation easier. On the other hand, when looking for single crystals in a polycrystalline sample, the speed of CCD detectors is more useful. A new setup is described here which overcomes some of the limitations of limited-range CCD detectors to make them more useful for indexing, whilst at the same time making it much quicker to find single crystals within a larger polycrystalline structure. This was done by combining a CCD detector with a six-axis goniometer, allowing the compilation of images from different angles into a wide-angled image. Automated scans along the sample were coupled with image processing techniques to produce grain maps, which can then be used to provide a strategy to extract single crystals from a polycrystal.
Collapse
Affiliation(s)
- William Whitley
- Centre for Science at Extreme Conditions, Erskinne Williamson Building, Mayfield Road, Edinburgh EH9 3JZ, Scotland
| | - Chris Stock
- Centre for Science at Extreme Conditions, Erskinne Williamson Building, Mayfield Road, Edinburgh EH9 3JZ, Scotland
| | - Andrew D. Huxley
- Centre for Science at Extreme Conditions, Erskinne Williamson Building, Mayfield Road, Edinburgh EH9 3JZ, Scotland
| |
Collapse
|
6
|
McNulty I, Lai B, Maser J, Paterson DJ, Evans P, Heald SM, Ice GE, Isaacs ED, Rivers ML, Sutton SR. X‐ray microscopy at the advanced photon source. ACTA ACUST UNITED AC 2003. [DOI: 10.1080/08940880308603031] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
|