Detecting spin-polarized currents in ballistic nanostructures

Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments

Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices. Transverse magnetic focusing is a potential technique to accomplish both those tasks. In a material where there is significant Rashba spin-orbit interaction, electrons of different spins will traverse different paths in the presence of an external magnetic field. Experiments have demonstrated the viability of this technique by measuring conductance spectra that indicate the separation of spin-up and spin-down electrons. However the effect that the geometry of the leads has on these measurements is not well understood. By simulating an InGaAs-based transverse magnetic focusing device, we show that the resolution of features in the conductance spectra is affected by the shape, separation and width of the leads. Furthermore, the number of subbands occupied by the electrons in the leads affects the ratio between the amplitudes of the spin-split peaks in the spectra. We simulated devices with random onsite potentials and observed that transverse magnetic focusing devices are sensitive to disorder. Ultimately we show that careful choice and characterisation of device geometry are crucial for correctly interpreting the results of transverse magnetic focusing experiments.

Electrically controlled spin reversal and spin polarization of electronic transport in nanoporous graphene nanoribbons

Based on first-principles calculations, the spin-dependent electronic transport of nanoporous graphene nanoribbons is investigated. A three-terminal configuration is proposed, which can electronically control the spin polarization of transmission, instead of magnetic methods. By modulating the gate voltage, not only could the transmission be switched between completely spin up and spin down polarized states to realize a dual-spin filter, but also the spin polarization could be finely tuned between 100% and -100%. Any ratio of spin up to spin down transport electrons can be realized, providing more possibilities for the design of nanoelectronic devices. Further analysis shows that the transmission spectra, with two distinct transmission peaks with opposite spins around E_F, are the key point, which are contributed by p orbitals. And such a phenomenon is robust to the width and length of the nanoporous graphene nanoribbons, suggesting that it is an intrinsic feature of these systems. The electrical control on spin polarization is realized in pure-carbon systems, showing great application potential.

Spin-momentum locked spin manipulation in a two-dimensional Rashba system

Spin-momentum locking, which constrains spin orientation perpendicular to electron momentum, is attracting considerable interest for exploring various spin functionalities in semiconductors and topological materials. Efficient spin generation and spin detection have been demonstrated using the induced helical spin texture. Nevertheless, spin manipulation by spin-momentum locking remains a missing piece because, once bias voltage is applied to induce the current flow, the spin orientation must be locked by the electron momentum direction, thereby rendering spin phase control difficult. Herein, we demonstrate the spin-momentum locking-induced spin manipulation for ballistic electrons in a strong Rashba two-dimensional system. Electron spin rotates in a circular orbital motion for ballistically moving electrons, although spin orientation is locked towards the spin-orbit field because of the helical spin texture. This fact demonstrates spin manipulation by control of the electron orbital motion and reveals potential effects of the orbital degree of freedom on the spin phase for future spintronic and topological devices and for the processing of quantum information.

Imaging the Zigzag Wigner Crystal in Confinement-Tunable Quantum Wires

The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the formation of a new ground state constituting a zigzag chain with nontrivial spin phases and properties. Here we report the observation of such zigzag Wigner crystals by use of on-chip charge and spin detectors employing electron focusing to image the charge density distribution and probe their spin properties. This experiment demonstrates both the structural and spin phase diagrams of the 1D Wigner crystallization. The existence of zigzag spin chains and phases which can be electrically controlled in semiconductor systems may open avenues for experimental studies of Wigner crystals and their technological applications in spintronics and quantum information.

Engineering the spin polarization of one-dimensional electrons

We present results of magneto-focusing on the controlled monitoring of spin polarization within a one-dimensional (1D) channel, and its subsequent effect on modulating the spin-orbit interaction (SOI) in a 2D GaAs electron gas. We demonstrate that electrons within a 1D channel can be partially spin polarized as the effective length of the 1D channel is varied in agreement with the theoretical prediction. Such polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain unaffected (single peak). On the other hand, the unpolarized electrons do not affect the focusing spectrum and the odd and even peaks remain as single peaks, respectively. The split in odd-focusing peaks is evidence of direct measurement of spin polarization within a 1D channel, where each sub-peak represents the population of a particular spin state. Confirmation of the spin splitting is determined by a selective modulation of the focusing peaks due to the Zeeman energy in the presence of an in-plane magnetic field. We suggest that the SOI in the 2D regime is enhanced by a stream of polarized 1D electrons. The spatial control of spin states of injected 1D electrons and the possibility of tuning the SOI may open up a new regime of spin-engineering with application in future quantum information schemes.

Spin Fluctuations in the 0.7 Anomaly in Quantum Point Contacts

It has been argued that the 0.7 anomaly in quantum point contacts (QPCs) is due to an enhanced density of states at the top of the QPC barrier (the van Hove ridge), which strongly enhances the effects of interactions. Here, we analyze their effect on dynamical quantities. We find that they pin the van Hove ridge to the chemical potential when the QPC is subopen, cause a temperature dependence for the linear conductance that qualitatively agrees with experiments, strongly enhance the magnitude of the dynamical spin susceptibility, and significantly lengthen the QPC traversal time. We conclude that electrons traverse the QPC via a slowly fluctuating spin structure of finite spatial extent.

Temperature Dependence of Spin-Split Peaks in Transverse Electron Focusing

We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B_⊥), electrons are focused from the injector to detector leading to focusing peaks periodic in B_⊥. We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the injector. The temperature dependence reveals that the peak splitting is well defined at low temperature whereas it smears out at high temperature indicating the exchange-driven spin polarisation in the injector is dominant at low temperatures.

Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity σ(yx) = e2/h without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

Enhancement Mechanism of the Electron g Factor in Quantum Point Contacts

The electron g factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an outstanding puzzle. In the present work we explain the mechanism of this enhancement in a theory accounting for the electron-electron interactions. We show that the effect relies crucially on the nonequilibrium nature of the spectroscopy at finite bias.

Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction

Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.

A proposal of a spin cell using light on magnetic tunneling junctions

We propose and theoretically investigate a spin cell using light as the power source. Such a device can be realized when a quantum dot is connected to two ferromagnetic electrodes. In the case of identical electrodes, a pure spin current (PSC) can be generated when the light is shone on the quantum dot. Moreover, the PSC can be tuned continuously from zero to the maximum when the magnetic moment orientations of the two electrodes are changed from parallel to anti-parallel. The output spin bias is linear with the light power in the low power region, while it approaches the theoretical limit when the power is extremely high because of the electrodes' renormalization by the spin transfer torque. This effect implies that light energy can be transferred to electron spin directly, which may be applicable in future opto-spintronics.

All-electrical injection and detection of a spin-polarized current using 1D conductors

All-electrical control of spin transport in nanostructures has been the central interest and challenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing or filtering actions by driving the gate-defined one dimensional (1D) conductor, one of the simplest geometries for integrated quantum devices, away from the conventional Ohmic regime. Direct measurement of the spin polarization of the emitted current was performed when the momentum degeneracy was lifted, wherein both the 1D polarizer for spin injection and the analyzer for spin detection were demonstrated. The results showed that a configuration of gates and applied voltages can give rise to a tunable spin polarization, which has implications for the development of spintronic devices and future quantum information processing.

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices

Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 × 2e(2)/h anomaly. We report on the dependence of the 1D Landé g-factor g and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs. We show that g is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature.

What lurks below the last plateau: experimental studies of the 0.7 × 2e(2)/h conductance anomaly in one-dimensional systems

The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.

Spin-to-charge conversion of mesoscopic spin currents

Recent theoretical investigations have shown that spin currents can be generated by passing electric currents through spin-orbit coupled mesoscopic systems. Measuring these spin currents has, however, not been achieved to date. We show how mesoscopic spin currents in lateral heterostructures can be measured with a single-channel voltage probe. In the presence of a spin current, the charge current I(qpc) through the quantum point contact connecting the probe is odd in an externally applied Zeeman field B, while it is even in the absence of spin current. Furthermore, the zero-field derivative ∂(B)I(qpc) is proportional to the magnitude of the spin current, with a proportionality coefficient that can be determined in an independent measurement. We confirm these findings numerically.

Linear response spin admittance of a quantum dot subject to a spin bias

We compute the linear response spin admittance of a non-equilibrium quantum dot subject to a spin bias and an ac charge bias with small amplitude. As a function of the position of the resonant level (i.e. the gate voltage) the spin admittance shows a set of two peaks around the gate voltage at which the resonant or the upper level of the dot is in the vicinity of the equilibrium Fermi level in the leads. The peak heights can be related to the average number of quantum dot electrons. The frequency dependence of the spin admittance shows features resulting from the photon-assisted tunneling through the dot.

Kondo effect in a semiconductor quantum dot with a spin-accumulated lead

We study the Kondo effect in a semiconductor quantum dot in contact with a spin-accumulated lead. The spin accmulation in a nonmagnetic semiconductor is realized by spin injection from a spin-polarized quantum point contact in combination with magnetic focusing, thus creating spin-unbalanced chemical potentials. We demonstrate that the spin splitting of the Kondo densities of states (DOS) for spin-up and spin-down electrons can be controlled by selectively shifting only the spin-up DOS using spin accumulation. We also show the possibility to recover the Kondo effect in a high magnetic field, by compensating for Zeeman splitting by spin accumulation.

Electrical generation of pure spin currents in a two-dimensional electron gas

Pure spin currents are generated and detected in micron-wide channels of a GaAs two-dimensional electron gas, using quantum point contacts in an in-plane magnetic field as injectors and detectors. The enhanced sensitivity to spin transport offered by a nonlocal measurement geometry enables accurate spin current measurements in this widely studied physical system. The polarization of the contacts is used to extract the quantum point contact g factor and provides a test for spontaneous polarization at 0.7 structure. The spin relaxation length in the channel is 30-50 microm over the magnetic field range 3-10 T, much longer than has been reported in GaAs two-dimensional electron gases but shorter than that expected from Dyakonov-Perel relaxation.

Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor

Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology. Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals, diluted magnetic semiconductors, quantum point contacts, quantum dots, carbon nanotubes, multiferroics and so on. This filtering effect was so far restricted to a limited efficiency and primarily at low temperatures or under a magnetic field. Here, we provide direct and unambiguous experimental proof that an electron-spin-polarized defect, such as a Ga(i) self-interstitial in dilute nitride GaNAs, can effectively deplete conduction electrons with an opposite spin orientation and can thus turn the non-magnetic semiconductor into an efficient spin filter operating at room temperature and zero magnetic field. This work shows the potential of such defect-engineered, switchable spin filters as an attractive alternative to generate, amplify and detect electron spin polarization at room temperature without a magnetic material or external magnetic fields.

Spin accumulation and spin relaxation in a large open quantum dot

We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection were achieved with quantum point contacts tuned to have spin-selective transport, with four contacts per dot for realizing a nonlocal spin-valve circuit. This provides an interesting system for studies of spintronic effects since the contacts to reservoirs can be controlled and characterized with high accuracy. We show how this can be used to extract in a single measurement the relaxation time for electron spins inside a ballistic dot (tau(sf) approximately equal to 300 ps) and the degree of spin polarization of the contacts (P approximately equal to 0.8).

Spontaneous spin polarization in quantum point contacts

We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the low-density regime, when the conductance of a point contact is tuned to < 2e2/h. Polarization is stronger in samples with a well-defined "0.7 structure."

Detecting entanglement using a double-quantum-dot turnstile

We propose a scheme based on using the singlet ground state of an electron spin pair in a double-quantum-dot nanostructure as a suitable setup for detecting entanglement between electron spins via the measurement of an optimal entanglement witness. Using time-dependent gate voltages and magnetic fields the entangled spins are separated and coherently rotated in the quantum dots and subsequently detected at spin-polarized quantum point contacts. We analyze the coherent time evolution of the entangled pair and show that by counting coincidences in the four exits an entanglement test can be done. This setup is close to present-day experimental possibilities and can be used to produce pairs of entangled electrons "on demand."

Full counting statistics with spin-sensitive detectors reveals spin singlets

We study the full counting statistics of electric current to several drain terminals with spin-dependent entrance conductances. We show that the statistics of charge transfers can be interpreted in terms of single electrons and spin-singlet pairs coming from the source. If the source contains transport channels of high transparency, a significant fraction of electrons comes in spin-singlet pairs.

Tuning the nonlocal spin-spin interaction between quantum dots with a magnetic field

We describe a device where the nonlocal spin-spin interaction between quantum dots (QDs) can be turned on and off with a small magnetic field. The setup consists of two QDs at the edge of two two-dimensional electron gases (2DEGs). The QDs' spins are coupled through a RKKY-like interaction mediated by the electrons in the 2DEGs. A magnetic field B(z) perpendicular to the plane of the 2DEG is used as a tuning parameter. When the cyclotron radius is commensurate with the interdot distance, the spin-spin interaction is amplified by a few orders of magnitude. The sign of the interaction is controlled by finely tuning B(z). Our setup allows for several dots to be coupled in a linear arrangement and it is not restricted to nearest-neighbor interaction.

Spin filtering in a hybrid ferromagnetic-semiconductor microstructure

We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the range of tens of mT of the external field and are attributed to switching between Zeeman and Stern-Gerlach modes--the former dominating at low electron densities.

Spin separation in cyclotron motion

Charged carriers with different spin states are spatially separated in a two-dimensional hole gas. Because of strong spin-orbit interaction, holes at the Fermi energy in GaAs have different momenta for two possible spin states traveling in the same direction, and, correspondingly, different cyclotron orbits in a weak magnetic field. Two point contacts, acting as a monochromatic source of ballistic holes and a narrow detector arranged in the magnetic focusing geometry are demonstrated to work as a tunable spin filter.

Coulomb scattering in a 2D interacting electron gas and production of EPR pairs

We propose a setup to generate nonlocal spin Einstein-Podolsky-Rosen pairs via pair collisions in a 2D interacting electron gas, based on constructive two-particle interference in the spin-singlet channel at the pi/2 scattering angle. We calculate the scattering amplitude via the Bethe-Salpeter equation in the ladder approximation and small r(s) limit and find that the Fermi sea leads to a substantial renormalization of the bare scattering process. From the scattering length, we estimate the current of spin-entangled electrons and show that it is within experimental reach.

Experimental realization of a quantum spin pump

We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin dependent by the application of an in-plane Zeeman field. Spin currents are measured by placing the pump in a focusing geometry with a spin-selective collector.

Spin current through a quantum dot in the presence of an oscillating magnetic field

Nonequilibrium spin transport through an interacting quantum dot is analyzed. The coherent spin oscillations in the dot provide a generating source for spin current. In the interacting regime, the Kondo effect is influenced in a significant way by the presence of the processing magnetic field. In particular, when the precession frequency is tuned to resonance between spin-up and spin-down states of the dot, Kondo singularity for each spin splits into a superposition of two resonance peaks. The Kondo-type cotunneling contribution is manifested by a large enhancement of the pumped spin current in the strong coupling low temperature regime.

Spin and polarized current from Coulomb blockaded quantum dots

We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions, as well as higher-spin ground states, and allows g factors to be measured down to a single electron. The spin of emitted current in the Coulomb blockade regime, measured using spin-sensitive electron focusing, is found to be polarized along the direction of the applied magnetic field regardless of the ground state spin transition.

A gate-controlled bidirectional spin filter using quantum coherence

We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed.