Superconductivity in boron-doped diamond

Ultrastable halide perovskite CsPbBr3 photoanodes achieved with electrocatalytic glassy-carbon and boron-doped diamond sheets

Halide perovskites exhibit exceptional optoelectronic properties for photoelectrochemical production of solar fuels and chemicals but their instability in aqueous electrolytes hampers their application. Here we present ultrastable perovskite CsPbBr3-based photoanodes achieved with both multifunctional glassy carbon and boron-doped diamond sheets coated with Ni nanopyramids and NiFeOOH. These perovskite photoanodes achieve record operational stability in aqueous electrolytes, preserving 95% of their initial photocurrent density for 168 h of continuous operation with the glassy carbon sheets and 97% for 210 h with the boron-doped diamond sheets, due to the excellent mechanical and chemical stability of glassy carbon, boron-doped diamond, and nickel metal. Moreover, these photoanodes reach a low water-oxidation onset potential close to +0.4 VRHE and photocurrent densities close to 8 mA cm-2 at 1.23 VRHE, owing to the high conductivity of glassy carbon and boron-doped diamond and the catalytic activity of NiFeOOH. The applied catalytic, protective sheets employ only earth-abundant elements and straightforward fabrication methods, engineering a solution for the success of halide perovskites in stable photoelectrochemical cells.

Thickness Effects on Boron Doping and Electrochemical Properties of Boron-Doped Diamond Film

As a significant parameter in tuning the structure and performance of the boron-doped diamond (BDD), the thickness was focused on the mediation of the boron doping level and electrochemical properties. BDD films with different thicknesses were deposited on silicon wafers by the hot filament chemical vapor deposition (HFCVD) method. The surface morphology and composition of the BDD films were characterized by SEM and Raman, respectively. It was found that an increase in the BDD film thickness resulted in larger grain size, a reduced grain boundary, and a higher boron doping level. The electrochemical performance of the electrode equipped with the BDD film was characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in potassium ferricyanide. The results revealed that the thicker films exhibited a smaller peak potential difference, a lower charge transfer resistance, and a higher electron transfer rate. It was believed that the BDD film thickness-driven improvements of boron doping and electrochemical properties were mainly due to the columnar growth mode of CVD polycrystalline diamond film, which led to larger grain size and a lower grain boundary density with increasing film thickness.

Revealing the Unusual Boron-Pinned Layered Substructure in Superconducting Hard Molybdenum Semiboride

Improving the poor electrical conductivity of hard materials is important, as it will benefit their application. High-hardness metallic Mo₂B was synthesized by high-pressure and high-temperature methods. Temperature-dependent resistivity measurements suggested that Mo₂B has excellent metallic conductivity properties and is a weakly coupled superconductor with a T _c of 6.0 K. The Vickers hardness of the metal-rich molybdenum semiboride reaches 16.5 GPa, exceeding the hardness of MoB and MoB₂. The results showed that a proper boron concentration can improve the mechanical properties, not necessarily a high boron concentration. First-principles calculations revealed that the pinning effect of light elements is related to hardness. The high hardness of boron-pinned layered Mo₂B demonstrated that the design of high-hardness conductive materials should be based on the structure formed by light elements rather than high-concentration light elements.

Low-pressure diamond: from the unbelievable to technical products

The idea to grow diamond from the gas phase was born in the 1950s but it took about 30 years until first diamond layers directly grown from the gas phase on substrates were shown in Japan by Matsumoto and co-workers. During the first years of research the function of atomic hydrogen, various growth methods and process parameters were investigated. Research was primarily focused on applications for wear-resistant tools. For this topic the interactions of substrates like hardmetals and ceramics, with diamond deposition gas atmosphere, were investigated. Beside its superior hardness, diamond exhibits the highest heat conductivity, high transparency, high chemical inertness and suitable semiconducting properties. The various requirements for the areas of application of diamond required a division of diamond research into corresponding sub-areas. The hot-filament method is used mainly for wear applications, because it is highly suited to coat complex geometries, but the diamond contains some impurities. Another method is the microwave plasma system which allows the growth of pure diamond used for optical windows and applications requiring high thermal conductivity. Other research areas investigated include doped diamond for microelectronic or electrochemical applications (e.g. waste water treatment); ballas (polycrystalline, spherical diamond), NCD (nanocrystalline diamond) and UNCD (ultra-nanocrystalline diamond) for wear applications.

It should be noted that CVD (chemical vapour deposition) diamond synthesis has reached the stage of industrial production and several companies are selling different diamond products. This work is intended to convey to the reader that CVD diamond is an industrially manufactured product that can be used in many ways. With correspondingly low costs for this diamond, new innovative applications appear possible.

Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces

A laser-induced doping method was employed to incorporate phosphorus into an insulating monocrystalline diamond at ambient temperature and pressure conditions. Pulsed laser beams with nanosecond duration (20 ns) were irradiated on the diamond substrate immersed in a phosphoric acid liquid, in turns, and a thin conductive layer was formed on its surface. Phosphorus incorporation in the depth range of 40-50 nm below the irradiated surface was confirmed by secondary ion mass spectroscopy (SIMS). Electrically, the irradiated areas exhibited ohmic contacts even with tungsten prober heads at room temperature, where the electrical resistivity of irradiated areas was greatly decreased compared to the original surface. The temperature dependence of the electrical conductivity implies that the surface layer is semiconducting with activation energies ranging between 0.2 eV and 54 meV depending on irradiation conditions. Since after laser treatment no carbon or graphitic phases other than diamond is found (the D and G Raman peaks are barely observed), the incorporation of phosphorus is the main origin of the enhanced conductivity. It was demonstrated that the proposed technique is applicable to diamond as a new ex situ doping method for introducing impurities into a solid in a precise and well-controlled manner, especially with electronic technology targeting of smaller devices and shallower junctions.

Superconductivity in Compression-Shear Deformed Diamond

Diamond is a prototypical ultrawide band gap semiconductor, but turns into a superconductor with a critical temperature T_{c}≈4  K near 3% boron doping [E. A. Ekimov et al., Nature (London) 428, 542 (2004)NATUAS0028-083610.1038/nature02449]. Here we unveil a surprising new route to superconductivity in undoped diamond by compression-shear deformation that induces increasing metallization and lattice softening with rising strain, producing phonon mediated T_{c} up to 2.4-12.4 K for a wide range of Coulomb pseudopotential μ^{*}=0.15-0.05. This finding raises intriguing prospects of generating robust superconductivity in strained diamond crystal, showcasing a distinct and hitherto little explored approach to driving materials into superconducting states via strain engineering. These results hold promise for discovering superconductivity in normally nonsuperconductive materials, thereby expanding the landscape of viable nontraditional superconductors and offering actionable insights for experimental exploration.

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B₄C on SiC and graphene on B₄C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B₄C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B₄C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 × 10¹³ to 2 × 10¹⁵ cm^-2. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

Viewpoint: the road to room-temperature conventional superconductivity

It is a honor to write a contribution on this memorial for Sandro Massidda. For both of us, at different stages in our lives, Sandro was first and foremost a friend. We both admired his humble, playful and profound approach to life and physics. In this contribution we describe the route which permitted to meet a long-standing challenge in solid state physics, i.e. room temperature superconductivity. In less than 20 years the critical temperature of conventional superconductors, which in the last century had been widely believed to be limited to 25 K, was raised from 40 K in MgB₂ to 265 K in LaH₁₀. This discovery was enabled by the development and application of computational methods for superconductors, a field in which Sandro Massidda played a major role.

Structure-property correlations in phase-pure B-doped Q-carbon high-temperature superconductor with a record Tc = 55 K

Here, we report the detailed structure-property correlations in phase-pure B-doped Q-carbon high-temperature superconductor having a superconducting transition temperature (Tc) of 55 K. This superconducting phase is a result of nanosecond laser melting and subsequent quenching of a highly super undercooled state of molten B-doped C. The temperature-dependent resistivity in different magnetic fields and magnetic susceptibility measurements indicate a type-II Bardeen-Cooper-Schrieffer superconductivity in B-doped Q-carbon thin films. The magnetic measurements indicate that the upper and lower critical fields follow Hc2(0)[1 - (T/Tc)1.77] and Hc1(0)[1 - (T/Tc)1.19] temperature dependence, respectively. The structure-property characterization of B-doped Q-carbon indicates a high density of electronic states near the Fermi-level and large electron-phonon coupling. These factors are responsible for s-wave bulk type superconductivity with enhanced Tc in B-doped Q-carbon. The time-dependent magnetic moment measurements indicate that B-doped Q-carbon thin films follow the Anderson-Kim logarithmic decay model having high values of pinning potential at low temperatures. The crossover from the two-dimensional to the three-dimensional nature of Cooper pair transport at T/Tc = 1.02 also indicates a high value of electron-phonon coupling which is also calculated using the McMillan formula. The superconducting region in B-doped Q-carbon is enclosed by Tc = 55.0 K, Jc = 5.0 × 108 A cm-2, and Hc2 = 9.75 T superconducting parameters. The high values of critical current density and pinning potential also indicate that B-doped Q-carbon can be used for persistent mode of operation in MRI and NMR applications. The Cooper pairs which are responsible for the high-temperature superconductivity are formed when B exists in the sp3 sites of C. The electron energy loss spectroscopy and Raman spectroscopy indicate a 75% sp3 bonded C and 70% sp3 bonded B in the superconducting phase of B-doped Q-carbon which has 27 at% B and rest C. The dimensional fluctuation and magnetic relaxation measurements in B-doped Q-carbon indicate its practical applications in frictionless motors and high-speed electronics. This discovery of high-temperature superconductivity in strongly-bonded and light-weight materials using non-equilibrium synthesis will provide the pathway to achieve room-temperature superconductivity.

Doping of Carbon Materials for Metal-Free Electrocatalysis

Carbon atoms in the graphitic carbon skeleton can be replaced by heteroatoms with different electronegative from that of the carbon atom (i.e., heteroatom doping) to modulate the charge distribution over the carbon network. The charge modulation can be achieved via direct charge transfer with an electron acceptor/donor (i.e., charge transfer doping) or through introduction of defects (i.e., defective doping). Various doping strategies, including heteroatom doping, charge-transfer doping, and defective doping, have now been devised for modulating the charge distribution of numerous graphite carbon materials to impart new properties to carbon materials. Consequently, carbon nanomaterials with defined doping have recently become prominent members in the carbon family, promising for a variety of applications, including catalysis, energy conversion and storage, environmental remediation, and important chemical production and industrial processes. The purpose of this review is to present an overview on the doping of carbon materials for metal-free electrocatalysis, especially the development of doping strategies and doping-induced structure and property changes for potential catalytic applications. Current challenges and future perspectives in the doped carbon-based metal-free catalyst field are also discussed.

Conductive diamond: synthesis, properties, and electrochemical applications

This review summarizes systematically the growth, properties, and electrochemical applications of conductive diamond.

Nonadiabatic Kohn Anomaly in Heavily Boron-Doped Diamond

We report evidence of a nonadiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate that standard calculations of phonons using density-functional perturbation theory are unable to reproduce the dispersion relations of the high-energy phonons measured by high-resolution inelastic x-ray scattering. On the contrary, by taking into account nonadiabatic effects within a many-body field-theoretic framework, we obtain excellent agreement with our experimental data. This result indicates a breakdown of the Born-Oppenheimer approximation in the phonon dispersion relations of boron-doped diamond.

Specific features of electronic structures and optical susceptibilities of g-BC3 and t-BC3 phases

Details of comparison for some specific features of electronic structures and optical susceptibilities of g-BC3 and t-BC3 phases are provided. Calculations show that the g-BC3 phase is a narrow band gap semiconductor constructed from the ABAB stacking sequence. Whereas t-BC3 is a metallic phase constructed by a sandwich-like metal-insulator lattice from an alternately stacking sequence of metallic CBC and insulating CCC blocks. The two phases possess only two types of bonds (B-C and C-C). The density of states at the Fermi level N(EF) of the t-BC3 phase is determined by the overlapping of B-2p and C-2p empty orbitals of the CBC block with C-2p empty orbitals of the CCC block, and the shape of the Fermi surface originated from these empty orbitals. The B atoms cause a small perturbation on the C-ring's structure and hence to the charge density distribution. The linear optical properties of the two phases confirm the existence of the lossless regions and the considerable anisotropy. The second harmonic generation of the t-BC3 phase shows that χ(ω) is the dominant component of about 3.9 pm V(-1) at the static limit and 5.8 pm V(-1) at λ = 1064 nm, which suggests that the t-BC3 phase could be considered as a promising nonlinear optical material in comparison with the well known KTiOPO4 nonlinear optical single crystal.

Transport properties of g-BC3and t-BC3phases

The electronic transport coefficients of the g-BC₃and t-BC₃phases are obtained with the aid of the semi-classical Boltzmann theory and the rigid band model based on density functional theory within the recently modified Becke–Johnson potential.

Terahertz science and technology of carbon nanomaterials

The diverse applications of terahertz (THz) radiation and its importance to fundamental science makes finding ways to generate, manipulate and detect THz radiation one of the key areas of modern applied physics. One approach is to utilize carbon nanomaterials, in particular, single-wall carbon nanotubes and graphene. Their novel optical and electronic properties offer much promise to the field of THz science and technology. This article describes the past, current, and future of THz science and technology of carbon nanotubes and graphene. We will review fundamental studies such as THz dynamic conductivity, THz nonlinearities and ultrafast carrier dynamics as well as THz applications such as THz sources, detectors, modulators, antennas and polarizers.

Conversion of multilayer graphene into continuous ultrathin sp³-bonded carbon films on metal surfaces

The conversion of multilayer graphenes into sp(3)-bonded carbon films on metal surfaces (through hydrogenation or fluorination of the outer surface of the top graphene layer) is indicated through first-principles computations. The main driving force for this conversion is the hybridization between sp(3) orbitals and metal surface dz(2) orbitals. The induced electronic gap states and spin moments in the carbon layers are confined in a region within 0.5 nm of the metal surface. Whether the conversion occurs depend on the fraction of hydrogenated (fluorinated) C atoms at the outer surface and on the number of stacked graphene layers. In the analysis of the Eliashberg spectral functions for the sp(3) carbon films on a metal surface that is diamagnetic, the strong covalent metal-sp(3) carbon bonds induce soft phonon modes that predominantly contribute to large electron-phonon couplings, suggesting the possibility of phonon-mediated superconductivity. Our computational results suggest a route to experimental realization of large-area ultrathin sp(3)-bonded carbon films on metal surfaces.

Dimerization of boron dopant in diamond (100) epitaxy induced by strong pair correlation on the surface

Experiments have shown that boron incorporation in diamond epitaxies is orientation dependent. Our first-principles calculations reveal that at a (100) surface, the formation of the boron dimer is more favored than that of the monomer, indicating a high density of ineffective boron formed under heavy doping. The reconstructed surface layer of carbon dimers in which the electrons are strongly pair correlated provides the mechanism. Hydrogen adsorption affects the correlation and thus the favorability of boron dimer formation, while at a (111) surface, the formation of boron monomer is more favored due to the less correlated surface electrons and hydrogen adsorption has no effect on the favorability.

Electron-phonon renormalization of the direct band gap of diamond

We calculate from first principles the temperature-dependent renormalization of the direct band gap of diamond arising from electron-phonon interactions. The calculated temperature dependence is in good agreement with spectroscopic ellipsometry measurements, and the zero-point renormalization of the band gap is found to be as large as 0.6 eV. We also calculate the temperature-dependent broadening of the direct absorption edge and find good agreement with experiment. Our work calls for a critical revision of the band structures of other carbon-based materials calculated by neglecting electron-phonon interactions.

First-principles prediction of doped graphane as a high-temperature electron-phonon superconductor

We predict by first-principles calculations that p-doped graphane is an electron-phonon superconductor with a critical temperature above the boiling point of liquid nitrogen. The unique strength of the chemical bonds between carbon atoms and the large density of electronic states at the Fermi energy arising from the reduced dimensionality give rise to a giant Kohn anomaly in the optical phonon dispersions and push the superconducting critical temperature above 90 K. As evidence of graphane was recently reported, and doping of related materials such as graphene, diamond, and carbon nanostructures is well established, superconducting graphane may be feasible.

Strong charge-transfer excitonic effects and the Bose-Einstein exciton condensate in graphane

Using first principles many-body theory methods (GW+Bethe-Salpeter equation) we demonstrate that the optical properties of graphane are dominated by localized charge-transfer excitations governed by enhanced electron correlations in a two-dimensional dielectric medium. Strong electron-hole interaction leads to the appearance of small radius bound excitons with spatially separated electron and hole, which are localized out of plane and in plane, respectively. The presence of such bound excitons opens the path towards an excitonic Bose-Einstein condensate in graphane that can be observed experimentally.

First-principles study of the structural, elastic, and electronic properties of C(20), C(12)B(8), and C(12)N(8)

First-principles calculations were performed to study the structural, elastic, and electronic properties of the crystalline form of C(20), C(12)B(8), and C(12)N(8). These compounds exhibit very different elastic and electronic properties. The shear modulus of C(12)N(8) is much higher than those of C(20) and C(12)B(8). The strong covalent C-N interaction plays an important role in this high shear modulus. Compared with C(20), the relatively small Zener anisotropy of C(12)N(8) is mainly due to its large elastic constant (C(11) - C(12)). The calculated band structure shows that C(12)N(8) is an insulator with a direct band gap of 3 eV and the other two compounds (C(20) and C(12)B(8)) are metallic. Analysis of the band structure, density of states, and charge density show that the degree of filling in the non-bonding 2p(z) strongly affects the electronic properties. The full filling of the non-bonding orbital for C(12)N(8) results in its insulating behavior.

Superconductivity in CVD diamond films

A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and magnetic measurements and so on. This review elucidates the physical properties and mechanism of diamond superconductor as a special superconductivity that occurs in semiconductors.

Superconducting group-IV semiconductors

Despite the amount of experimental and theoretical work on doping-induced superconductivity in covalent semiconductors based on group IV elements over the past four years, many open questions and puzzling results remain to be clarified. The nature of the coupling (whether mediated by electronic correlation, phonons or both), the relationship between the doping concentration and the critical temperature (T(c)), which affects the prospects for higher transition temperatures, and the influence of disorder and dopant homogeneity are debated issues that will determine the future of the field. Here, we present recent achievements and predictions, with a focus on boron-doped diamond and silicon. We also suggest that innovative superconducting devices, combining specific properties of diamond or silicon with the maturity of semiconductor-based technologies, will soon be developed.

Magic-sized diamond nanocrystals

The 2D structural transformation of a heavily boron-doped diamond surface has been revealed using scanning tunneling microscopy (STM). We found that at boron densities above the metal-insulator transition the diamond surface is comprised of spatially ordered magic-sized nanocrystals. The development of quantized electron gas inside these nanocrystals is directly confirmed by STM observation of standing electron waves. The experimental comparison of metallic and insulating diamond reveals the existence of the Fermi-sea-induced quantum selection rules for the self-assembly of nanostructures.

Electronic structure of boron-doped diamond with B-H complex and B pair

The electronic structure of boron-hydrogen complex and boron pair in diamond are studied by first-principles density-functional calculations with supercell models. The electronic structure calculated for the B-H complexes with C2v or C3v symmetry and the nearest-neighbor B pair is used to interpret recent experimental results such as B 1s x-ray photoemission spectroscopy, 11B nuclear quadruple resonance and B K-edge x-ray absorption spectroscopy, which cannot be explained solely by the isolated substitutional boron.

Superconductivity in compensated and uncompensated semiconductors

We investigate the localization and superconductivity in heavily doped semiconductors. The crossover from the superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. The microscopic inhomogeneity and the thermal superconducting fluctuation are taken into account using the self-consistent 1-loop order theory. The superconductor-insulator transition accompanies the crossover from the host band to the impurity band. We point out an enhancement of the critical temperature Tc around the crossover. Further localization of electron wave functions leads to the localization of Cooper pairs and induces the pseudogap. We find that both the doping compensation by additional donors and the carrier increase by additional acceptors suppress the superconductivity. A theoretical interpretation is proposed for the superconductivity in the boron-doped diamond, SiC, and Si.

Superconductivity in carrier-doped silicon carbide

We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm-3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

High-Tc superconductivity in superhard diamondlike BC5

Using density functional theory calculations we show that the recently synthesized superhard diamondlike BC5 is superconducting with a critical temperature of the same order as that of MgB2. The average electron-phonon coupling is lambda=0.89, the phonon-frequency logarithmic average is <omega>log=67.4 meV, and the isotope coefficients are alpha(C)=0.3 and alpha(B)=0.2. In BC5, superconductivity is mostly sustained by concerted vibrations of the B atom and its C neighbors.

Temperature-dependent localized excitations of doped carriers in superconducting diamond

Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (approximately 150 meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.

Metal-to-insulator transition and superconductivity in boron-doped diamond

The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

Electron-phonon interaction via electronic and lattice Wannier functions: superconductivity in boron-doped diamond reexamined

We present a first-principles technique for investigating the electron-phonon interaction with millions of k points in the Brillouin zone, which exploits the spatial localization of electronic and lattice Wannier functions. We demonstrate the effectiveness of our technique by elucidating the phonon mechanism responsible for superconductivity in boron-doped diamond. Our calculated phonon self-energy and Eliashberg spectral function show that superconductivity cannot be explained without taking into account the finite-wave-vector Fourier components of the vibrational modes introduced by boron, as well as the breaking of the diamond crystal periodicity induced by doping.

Observation of a superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy

We investigate the temperature (T)-dependent low-energy electronic structure of a boron-doped diamond thin film using ultrahigh resolution laser-excited photoemission spectroscopy. We observe a clear shift of the leading edge below T=11 K, indicative of a superconducting gap opening (Delta approximately 0.78 meV at T=4.5 K). The gap feature is significantly broad and a well-defined quasiparticle peak is lacking even at the lowest temperature of measurement (=4.5 K). We discuss our results in terms of disorder effects on the normal state transport and superconductivity in this system.

Superconductivity in doped cubic silicon

Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon's semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100 p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature T(c) approximately 0.35 K, with a critical field of about 0.4 T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron-phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.

Low-energy electrodynamics of superconducting diamond

Heavily boron-doped, diamond films can become superconducting with critical temperatures Tc well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm(-1), by also using coherent synchrotron radiation. We thus determine the optical gap 2Delta, the field penetration depth lambda, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function alpha2F(omega). We conclude that diamond behaves as a dirty BCS superconductor.

Tunneling spectroscopy and vortex imaging in boron-doped diamond

We present the first scanning tunneling spectroscopy study of single-crystalline boron-doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear superconducting gap. The temperature evolution of the order parameter follows the weak-coupling BCS law with Delta(0)/kBTc approximately 1.74. Vortex imaging at low magnetic field also reveals localized states inside the vortex core that are unexpected for such a dirty superconductor.

Origin of the metallic properties of heavily boron-doped superconducting diamond

The physical properties of lightly doped semiconductors are well described by electronic band-structure calculations and impurity energy levels. Such properties form the basis of present-day semiconductor technology. If the doping concentration n exceeds a critical value n(c), the system passes through an insulator-to-metal transition and exhibits metallic behaviour; this is widely accepted to occur as a consequence of the impurity levels merging to form energy bands. However, the electronic structure of semiconductors doped beyond n(c) have not been explored in detail. Therefore, the recent observation of superconductivity emerging near the insulator-to-metal transition in heavily boron-doped diamond has stimulated a discussion on the fundamental origin of the metallic states responsible for the superconductivity. Two approaches have been adopted for describing this metallic state: the introduction of charge carriers into either the impurity bands or the intrinsic diamond bands. Here we show experimentally that the doping-dependent occupied electronic structures are consistent with the diamond bands, indicating that holes in the diamond bands play an essential part in determining the metallic nature of the heavily boron-doped diamond superconductor. This supports the diamond band approach and related predictions, including the possibility of achieving dopant-induced superconductivity in silicon and germanium. It should also provide a foundation for the possible development of diamond-based devices.

Room temperature peierls distortion in small diameter nanotubes

By means of ab initio simulations, we investigate the phonon band structure and electron-phonon coupling in small 4-A diameter nanotubes. We show that both the C(5,0) and C(3,3) tubes undergo above room temperature a Peierls transition mediated by an acoustical long wavelength and an optical q=2k(F) phonon, respectively. In the armchair geometry, we verify that the electron-phonon coupling parameter lambda originates mainly from phonons at q=2k(F) and is strongly enhanced when the diameter decreases. These results question the origin of superconductivity in small diameter nanotubes.

Three-dimensional MgB2-type superconductivity in hole-doped diamond

We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).

Role of the dopant in the superconductivity of diamond

We present an ab initio study of the recently discovered superconductivity of boron doped diamond within the framework of a phonon-mediated pairing mechanism. The role of the dopant, in substitutional position, is unconventional in that half of the coupling parameter lambda originates in strongly localized defect-related vibrational modes, yielding a very peaked Eliashberg alpha2F(omega) function. The electron-phonon coupling potential is found to be extremely large, and T(C) is limited by the low value of the density of states at the Fermi level. The effect of boron isotope substitution is explored.