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Upcraft D, Oh SH, Kim M. Simultaneous generation and manipulation of terahertz waves based on nonlinear leaky-waveguide antennas with integrated bianisotropic metasurfaces. OPTICS EXPRESS 2024; 32:5837-5850. [PMID: 38439300 DOI: 10.1364/oe.515363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Accepted: 01/18/2024] [Indexed: 03/06/2024]
Abstract
We hereby propose and theoretically investigate a new scheme for simultaneous generation and manipulation of terahertz (THz) waves through difference frequency generation facilitated by a metasurface-assisted nonlinear leaky waveguide antenna. The proposed structure integrates a nonlinear optical waveguide, composed of multiple AlxGa1-xAs layers, with a THz leaky waveguide, wherein a bianisotropic metasurface realizes the radiating aperture. By explicitly utilizing the electric, magnetic, and magnetoelectric coupling responses of the metasurface, we demonstrate that the generated THz wave can be induced as a tightly confined, phase-matched guided mode for efficient generation of the THz wave. Additionally, this approach allows the THz wave to be transformed into a directive beam, radiating at a user-defined leakage rate and direction. Our numerical analyses suggest that THz beams ranging from 2.85 THz to 3.05 THz can be steered from 4 ∘ to 40 ∘, utilizing the inherent beam-steering capabilities of the leaky-waveguide antenna. Within this THz frequency spectrum, the phase matching condition is achieved by adjusting the optical wavelengths between 1.6μm and 1.52μm. In particular, the nonlinear conversion efficiency is 2.9 × 10-5 [1/W] at 3 THz.
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Kohlhaas RB, Breuer S, Mutschall S, Kehrt M, Nellen S, Liebermeister L, Schell M, Globisch B. Ultrabroadband terahertz time-domain spectroscopy using III-V photoconductive membranes on silicon. OPTICS EXPRESS 2022; 30:23896-23908. [PMID: 36225061 DOI: 10.1364/oe.454447] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 04/12/2022] [Indexed: 06/16/2023]
Abstract
Electromagnetic waves in the terahertz (THz) frequency range are widely used in spectroscopy, imaging and sensing. However, commercial, table-top systems covering the entire frequency range from 100 GHz to 10 THz are not available today. Fiber-coupled spectrometers, which employ photoconductive antennas as emitters and receivers, show a bandwidth limited to 6.5 THz and some suffer from spectral artifacts above 4 THz. For these systems, we identify THz absorption in the polar substrate of the photoconductive antenna as the main reason for these limitations. To overcome them, we developed photoconductive membrane (PCM) antennas, which consist of a 1.2 µm-thin InGaAs layer bonded on a Si substrate. These antennas combine efficient THz generation and detection in InGaAs with absorption-free THz transmission through a Si substrate. With these devices, we demonstrate a fiber-coupled THz spectrometer with a total bandwidth of 10 THz and an artifact-free spectrum up to 6 THz. The PCM antennas present a promising path toward fiber-coupled, ultrabroadband THz spectrometers.
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Purschke DN, Pielmeier MRP, Üzer E, Ott C, Jensen C, Degg A, Vogel A, Amer N, Nilges T, Hegmann FA. Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100978. [PMID: 34278600 DOI: 10.1002/adma.202100978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 04/30/2021] [Indexed: 06/13/2023]
Abstract
Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm2 V-1 s-1 along the double-helix axis and a hole mobility of 238 cm2 V-1 s-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 1018 cm-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.
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Affiliation(s)
- David N Purschke
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Markus R P Pielmeier
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Ebru Üzer
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Claudia Ott
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Charles Jensen
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Annabelle Degg
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Anna Vogel
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Naaman Amer
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Tom Nilges
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Frank A Hegmann
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
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Karlsson D, van Leeuwen R, Pavlyukh Y, Perfetto E, Stefanucci G. Fast Green's Function Method for Ultrafast Electron-Boson Dynamics. PHYSICAL REVIEW LETTERS 2021; 127:036402. [PMID: 34328754 DOI: 10.1103/physrevlett.127.036402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2020] [Revised: 03/29/2021] [Accepted: 05/20/2021] [Indexed: 06/13/2023]
Abstract
The interaction of electrons with quantized phonons and photons underlies the ultrafast dynamics of systems ranging from molecules to solids, and it gives rise to a plethora of physical phenomena experimentally accessible using time-resolved techniques. Green's function methods offer an invaluable interpretation tool since scattering mechanisms of growing complexity can be selectively incorporated in the theory. Currently, however, real-time Green's function simulations are either prohibitively expensive due to the cubic scaling with the propagation time or do neglect the feedback of electrons on the bosons, thus violating energy conservation. We put forward a computationally efficient Green's function scheme which overcomes both limitations. The numerical effort scales linearly with the propagation time while the simultaneous dressing of electrons and bosons guarantees the fulfillment of all fundamental conservation laws. We present a real-time study of the phonon-driven relaxation dynamics in an optically excited narrow band-gap insulator, highlighting the nonthermal behavior of the phononic degrees of freedom. Our formulation paves the way to first-principles simulations of electron-boson systems with unprecedented long propagation times.
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Affiliation(s)
- Daniel Karlsson
- Department of Physics, Nanoscience Center, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland
| | - Robert van Leeuwen
- Department of Physics, Nanoscience Center, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland
| | - Yaroslav Pavlyukh
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle, Germany
- Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
| | - Enrico Perfetto
- Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
- INFN, Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
| | - Gianluca Stefanucci
- Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
- INFN, Sezione di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Rome, Italy
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Zhao D, Hu H, Haselsberger R, Marcus RA, Michel-Beyerle ME, Lam YM, Zhu JX, La-O-Vorakiat C, Beard MC, Chia EEM. Monitoring Electron-Phonon Interactions in Lead Halide Perovskites Using Time-Resolved THz Spectroscopy. ACS NANO 2019; 13:8826-8835. [PMID: 31348643 DOI: 10.1021/acsnano.9b02049] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Lead halide perovskite semiconductors have low-frequency phonon modes within the lead halide sublattice and thus are considered to be soft. The soft lattice is considered to be important in defining their interesting optoelectronic properties. Electron-phonon coupling governs hot-carrier relaxation, carrier mobilities, carrier lifetimes, among other important electronic characteristics. Directly observing the interplay between free charge carriers and phonons can provide details on how phonons impact these properties (e.g., exciton populations and other collective modes). Here, we observe a delicate interplay among carriers, phonons, and excitons in mixed-cation and mixed-halide perovskite films by simultaneously resolving the contribution of charge carriers and phonons in time-resolved terahertz photoconductivity spectra. We are able to observe directly the increase in phonon population during carrier cooling and discuss how thermal equilibrium populations of carriers and phonons modulate the carrier transport properties, as well as reduce the population of carriers within band tails. We are also able to observe directly the formation of free charge carriers when excitons interact with phonons and dissociate and to describe how free carriers and exciton populations exchange through phonon interactions. Finally, we also time-resolve how the carriers are screened via the Coulomb interaction at low and room temperatures. Our studies shed light on how charge carriers interact with the low-energy phonons and discuss implications.
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Affiliation(s)
- Daming Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
| | - Hongwei Hu
- School of Materials Science and Engineering , Nanyang Technological University , 639798 Singapore
| | - Reinhard Haselsberger
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
| | - Rudolph A Marcus
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
- Noyes Laboratory , California Institute of Technology , Pasadena , California 91125 , United States
| | - Maria-Elisabeth Michel-Beyerle
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
| | - Yeng Ming Lam
- School of Materials Science and Engineering , Nanyang Technological University , 639798 Singapore
| | - Jian-Xin Zhu
- Theoretical Division and Center for Integrated Nanotechnologies , Los Alamos National Laboratory , Los Alamos , New Mexico 87545 , United States
| | - Chan La-O-Vorakiat
- Nanoscience and Nanotechnology Graduate Program, Faculty of Science , King Mongkut's University of Technology Thonburi (KMUTT) , Bangkok 10140 , Thailand
- Theoretical and Computational Science Center (TaCS) , KMUTT , Bangkok 10140 , Thailand
| | - Matthew C Beard
- Chemistry and Nanoscience Science Center , National Renewable Energy Laboratory , Golden , Colorado 80401 , United States
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
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Abstract
Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.
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Affiliation(s)
- Oksana Ostroverkhova
- Department of Physics, Oregon State University , Corvallis, Oregon 97331, United States
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Hellmann S, Rohwer T, Kalläne M, Hanff K, Sohrt C, Stange A, Carr A, Murnane M, Kapteyn H, Kipp L, Bauer M, Rossnagel K. Time-domain classification of charge-density-wave insulators. Nat Commun 2012; 3:1069. [DOI: 10.1038/ncomms2078] [Citation(s) in RCA: 214] [Impact Index Per Article: 17.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2012] [Accepted: 08/20/2012] [Indexed: 11/09/2022] Open
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Leinß S, Kampfrath T, Volkmann KV, Schmid BA, Fröhlich D, Wolf M, Kaindl RA, Leitenstorfer A, Huber R. THz quantum optics with dark excitons in Cu2O: from stimulated emission to nonlinear population control. ACTA ACUST UNITED AC 2009. [DOI: 10.1002/pssc.200879859] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Lee JD, Hase M. Coherent optical control of the ultrafast dephasing of phonon-plasmon coupling in a polar semiconductor using a pulse train of below-band-gap excitation. PHYSICAL REVIEW LETTERS 2008; 101:235501. [PMID: 19113565 DOI: 10.1103/physrevlett.101.235501] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2008] [Indexed: 05/27/2023]
Abstract
In the investigation of the nonequilibrium ultrafast dynamics of the coherent phonon-plasmon coupled modes in a polar semiconductor, we predict theoretically that their coherent oscillations can be efficiently controlled by using the pulse train of below-band-gap excitation. The dynamics of the coherent modes are driven by the virtual electron-hole pairs, which would avoid dephasing sources such as accumulation of photoexcited charges and spontaneous emission. This implies that carrier mobility can also be efficiently controlled and dramatically enhanced by synchronizing the pulse train with the coherent oscillation of the carrier-relevant coupled mode.
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Affiliation(s)
- J D Lee
- School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Schins JM, Hendry E, Bonn M, Muller HG. Retrieving the susceptibility from time-resolved terahertz experiments. J Chem Phys 2007; 127:094308. [PMID: 17824740 DOI: 10.1063/1.2761915] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We present an analytical expression for the observed signal in time- and phase-resolved pump-probe studies, with particular emphasis on terahertz time-domain spectroscopy. Maxwell's equations are solved for the response of damped, harmonic oscillators to a driving probe field in the perturbative regime. Our analytical expressions agree with the one previously reported in the literature [Nemec et al., J. Chem. Phys. 122, 104503 (2005)] in the Drude limit; however, they differ in the case of a vibrational resonance.
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Affiliation(s)
- J M Schins
- Opto-Electronic Materials Section, DelftChem Tech, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
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11
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Mandal PK, Chikan V. Plasmon-phonon coupling in charged n-type CdSe quantum dots: A THz time-domain spectroscopic study. NANO LETTERS 2007; 7:2521-8. [PMID: 17630810 DOI: 10.1021/nl070853q] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
This work aims to experimentally determine the polarizability of confined electron in CdSe quantum dots (QD). The dielectric response of uncharged and charged CdSe quantum dots (3.2 and 6.3 nm) has been measured using terahertz time-domain spectroscopy in the frequency range of 2.0-7.0 THz. A strong coupling between the surface plasmon and surface phonons appears upon charging the QDs. The absolute polarizability of an electron in 3.2 and 6.3 nm charged QDs are experimentally determined to be 0.5 +/- 0.1 x 10(3) A3 and 14.6 +/- 0.3 x 10(3) A3, respectively, and the values agree reasonably well with theory and the previous experiment. The observed plasmon-phonon coupling is expected to play an important role in electron relaxation in absence of a hole in CdSe QDs.
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Affiliation(s)
- Pankaj K Mandal
- 111 Willard Hall, Department of Chemistry, Kansas State University, Kansas 66506, USA
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13
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Dani KM, Tignon J, Breit M, Chemla DS, Kavousanaki EG, Perakis IE. Ultrafast dynamics of coherences in a quantum Hall system. PHYSICAL REVIEW LETTERS 2006; 97:057401. [PMID: 17026139 DOI: 10.1103/physrevlett.97.057401] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2005] [Indexed: 05/12/2023]
Abstract
Using three-pulse four-wave-mixing optical spectroscopy, we study the ultrafast dynamics of the quantum Hall system. We observe striking differences as compared to an undoped system, where the 2D electron gas is absent. In particular, we observe a large off-resonant signal with strong oscillations. Using a microscopic theory, we show that these are due to many-particle coherences created by interactions between photoexcited carriers and collective excitations of the 2D electron gas. We extract quantitative information about the dephasing and interference of these coherences.
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Affiliation(s)
- K M Dani
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
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Koch SW, Kira M, Khitrova G, Gibbs HM. Semiconductor excitons in new light. NATURE MATERIALS 2006; 5:523-31. [PMID: 16819475 DOI: 10.1038/nmat1658] [Citation(s) in RCA: 49] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2006] [Accepted: 04/18/2006] [Indexed: 05/10/2023]
Abstract
Excitons are quasi-particles that form when Coulomb-interacting electrons and holes in semiconductors are bound into pair states. They have many features analogous to those of atomic hydrogen. Because of this, researchers are interested in exploring excitonic phenomena, from optical, quantum-optical and thermodynamic transitions to the possible condensation of excitons into a quantum-degenerate state. Excitonic signatures commonly appear in the optical absorption and emission of direct-gap semiconductor systems. However, the precise properties of incoherent exciton populations in such systems are difficult to determine and are the subject of intense debate. We review recent contributions to this discussion, and argue that to obtain detailed information about exciton populations, conventional experimental techniques should be supplemented by direct quasi-particle spectroscopy using the relatively newly available terahertz light sources. Finally, we propose a scheme of quantum-optical excitation to generate quantum-degenerate exciton states directly.
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Affiliation(s)
- S W Koch
- Department of Physics and Material Sciences Centre, Philipps-Universität, Renthof 5, D-35032 Marburg, Germany.
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Huber R, Schmid BA, Shen YR, Chemla DS, Kaindl RA. Stimulated terahertz emission from intraexcitonic transitions in Cu2O. PHYSICAL REVIEW LETTERS 2006; 96:017402. [PMID: 16486513 DOI: 10.1103/physrevlett.96.017402] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2005] [Indexed: 05/06/2023]
Abstract
We report the first observation of stimulated emission of terahertz radiation from internal transitions of excitons. The far-infrared electromagnetic response of Cu2O is monitored via broadband terahertz pulses after ultrafast resonant excitation of three-dimensional 3p excitons. Stimulated emission from the 3p to the energetically lower 2s bound level occurs at a photon energy of 6.6 meV, with a cross section of approximately 10(-14) cm2. Simultaneous excitation of both exciton levels, in turn, drives quantum beats, which lead to efficient terahertz emission sharply peaked at the difference frequency.
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Affiliation(s)
- Rupert Huber
- Department of Physics, University of California at Berkeley, and Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
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