Nonhermetic Encapsulation Materials for MEMS-Based Movable Microelectrodes for Long-Term Implantation in the Brain

Packaging and Non-Hermetic Encapsulation Technology for Flip Chip on Implantable MEMS Devices

We report here a successful demonstration of a flip-chip packaging approach for a microelectromechanical systems (MEMS) device with in-plane movable microelectrodes implanted in a rodent brain. The flip-chip processes were carried out using a custom-made apparatus that was capable of the following: 1) creating Ag epoxy microbumps for first-level interconnect; 2) aligning the die and the glass substrate; and 3) creating non-hermetic encapsulation (NHE). The completed flip-chip package had an assembled weight of only 0.5 g significantly less than the previously designed wire-bonded package of 4.5 g. The resistance of the Ag bumps was found to be negligible. The MEMS micro-electrodes were successfully tested for its mechanical movement with microactuators generating forces of 450 μN with a displacement resolution of 8.8 μm/step. An NHE on the front edge of the package was created by patterns of hydrophobic silicone microstructures to prevent contamination from cerebrospinal fluid while simultaneously allowing the microelectrodes to move in and out of the package boundary. The breakdown pressure of the NHE was found to be 80 cm of water, which is significantly (4.5-11 times) larger than normal human intracranial pressures. Bench top tests and in vivo tests of the MEMS flip-chip packages for up to 75 days showed reliable NHE for potential long-term implantation.

Novel First-Level Interconnect Techniques for Flip Chip on MEMS Devices

Flip-chip packaging is desirable for microelectro-mechanical systems (MEMS) devices because it reduces the overall package size and allows scaling up the number of MEMS chips through 3-D stacks. In this report, we demonstrate three novel techniques to create first-level interconnect (FLI) on MEMS: 1) Dip and attach technology for Ag epoxy; 2) Dispense technology for solder paste; 3) Dispense, pull, and attach technology (DPAT) for solder paste. The above techniques required no additional microfabrication steps, produced no visible surface contamination on the MEMS active structures, and generated high-aspect-ratio interconnects. The developed FLIs were successfully tested on MEMS moveable microelectrodes microfabricated by SUMMiTV^TM process producing no apparent detrimental effect due to outgassing. The bumping processes were successfully applied on Al-deposited bond pads of 100 μm × 100 μm with an average bump height of 101.3 μm for Ag and 184.8 μm for solder (63Sn, 37Pb). DPAT for solder paste produced bumps with the aspect ratio of 1.8 or more. The average shear strengths of Ag and solder bumps were 78 MPa and 689 kPa, respectively. The electrical test on Ag bumps at 794 A/cm² demonstrated reliable electrical interconnects with negligible resistance. These scalable FLI technologies are potentially useful for MEMS flip-chip packaging and 3-D stacking.