Protection circuits for ultrasound applications

High-efficiency high-voltage class F amplifier for high-frequency wireless ultrasound systems

This paper presents a novel amplifier that satisfies both low distortion and high efficiency for high-frequency wireless ultrasound systems with limited battery life and size. While increasing the amplifier efficiency helps to address the problems for wireless ultrasound systems, it can cause signal distortion owing to harmonic components. Therefore, a new type of class F amplifier is designed to achieve high efficiency and low distortion. In the amplifier, the resonant circuit at each stage controls the harmonic components to reduce distortion and improve efficiency. Transformers with a large shunt resistor are also helpful to reduce the remaining noise in the input signal. The proposed class F amplifier is tested using simulations, and the voltage and current waveforms are analyzed to achieve correct operation with adequate efficiency and distortion. The measured performance of the class F amplifier has a gain of 23.2 dB and a power added efficiency (PAE) of 88.9% at 25 MHz. The measured DC current is 121 mA with a variance of less than 1% when the PA is operating. We measured the received echo signal through the pulse-echo response using a 25-MHz transducer owing to the compatibility of the designed class F amplifier with high- frequency transducers. The measured total harmonic distortion (THD) of the echo signal was obtained as 4.5% with a slightly low ring-down. The results show that the low THD and high PAE of the new high-efficiency and high-voltage amplifier may increase battery life and reduce the cooling fan size, thus providing a suitable environment for high-frequency wireless ultrasound systems.

A Fast-Switching (1.35-μs) Low-Control-Voltage (2.5-V) MEMS T/R Switch Monolithically Integrated With a Capacitive Micromachined Ultrasonic Transducer (CMUT)

This paper describes the design and fabrication of an electrostatic MEMS switch that can be co-fabricated on the same substrate with a capacitive micromachined ultrasonic transducer (CMUT) as a transmit/receive (T/R) switch. The structure of the switch is modified from a single CMUT cell. An interrupted transmission line is defined across the center of the cell with control electrodes on both sides to pull a movable plate down. The plate has an insulation layer underneath and a metal bump is formed on the insulation layer and aligned to the transmission line gap, so that the switch could be turned on by pulling down the plate with electrostatic force and making the metal bump close the gap in the transmission line. The switch was designed using a finite-element model (FEM) and fabricated on a glass substrate using anodic bonding. A static characterization was first performed on a switch test structure, which shows the dc switching voltage was 68 V and the on-resistance was 50 Ω. The RF _in and RF _out isolation was measured as approximately 66 dB and insertion loss was approximately 4.5 dB for frequency range commonly used for medical ultrasound imaging. Then we performed the dynamic characterization in immersion. By setting the dc bias at 67 V, we found that the switch could be operated with a control-voltage as low as 2.5 V. The switching and release times are related to the rise time and the fall time of the control signal, respectively. The minimum switching time was measured as 1.34 μs with a control signal rise time of 300 ns, and the minimum release time was measured as 80 ns with a control signal fall time of 20 ns. We further demonstrated that a 1-kHz control signal with the optimized rise and fall times can be used to conduct and block a sinusoidal signal with 1-MHz frequency and 300-mV _pp amplitude, as well as unipolar pulses with 5-V _pp amplitude, 500-ns pulse width, and 2-kHz repetition rate. The presented MEMS switch could potentially eliminate the high-voltage process requirement for the on-chip front-end electronics of a CMUT-based ultrasound imaging system and thus improve the overall system efficiency.

Design and Implementation of an Electronic Front-End Based on Square Wave Excitation for Ultrasonic Torsional Guided Wave Viscosity Sensor

The market for process instruments generally requires low cost devices that are robust, small in size, portable, and usable in-plant. Ultrasonic torsional guided wave sensors have received much attention by researchers for measurement of viscosity and/or density of fluids in recent years. The supporting electronic systems for these sensors providing many different settings of sine-wave signals are bulky and expensive. In contrast, a system based on bursts of square waves instead of sine waves would have a considerable advantage in that respect and could be built using simple integrated circuits at a cost that is orders of magnitude lower than for a windowed sine wave device. This paper explores the possibility of using square wave bursts as the driving signal source for the ultrasonic torsional guided wave viscosity sensor. A simple design of a compact and fully automatic analogue square wave front-end for the sensor is also proposed. The successful operation of the system is demonstrated by using the sensor for measuring the viscosity in a representative fluid. This work provides the basis for design and manufacture of low cost compact standalone ultrasonic guided wave sensors and enlightens the possibility of using coded excitation techniques utilising square wave sequences in such applications.

Transceiver Design for CMUT-Based Super-Resolution Ultrasound Imaging

A recently introduced structure for the capacitive micromachined ultrasonic transducers (CMUTs) has focused on the applications of the asymmetric mode of vibration and has shown promising results in construction of super-resolution ultrasound images. This paper presents the first implementation and experimental results of a transceiver circuit to interface such CMUT structures. The multiple input/multiple output receiver in this work supports both fundamental and asymmetric modes of operation and includes transimpedance amplifiers and low-power variable-gain stages. These circuit blocks are designed considering the trade-offs between gain, input impedance, noise, linearity and power consumption. The high-voltage transmitter can generate pulse voltages up to 60 V while occupying a considerably small area. The overall circuit is designed and laid out in a 0.35 μm CMOS process and a four-channel transceiver occupies 0.86 × 0.38 mm(2). The prototype chip is characterized in both electrical and mechanical domains. Measurement results show that each receiver channel has a nominal gain of 110 dBΩ with a 3 dB bandwidth of 9 MHz while consuming 1.02 mW from a 3.3 V supply. The receiver is also highly linear, with 1 dB compression point of minimum 1.05 V which is considerably higher than the previously reported designs. The transmitter consumes 98.1 mW from a 30 V supply while generating 1.38 MHz, 30 V pulses. The CMOS-CMUT system is tested in the transmit mode and shows full functionality in air medium.

Novel power MOSFET-based expander for high frequency ultrasound systems

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption.

Scanning head with 128-element 20-MHz PVDF linear array transducer

A scanning head has been designed and fabricated that incorporates a 20-MHz, 128-element linear transducer. The scanning head also incorporates -200 V pulsers and a custom 16-channel amplifier. The transducer was constructed with 28 microm PVDF film with an element pitch of 250 microm. The transducer showed an average -20 dB pulse length of 69 ns. The elements of the PVDF array were tested and found to have 7.5 mPa/ radical Hz equivalent noise pressure. The radiated power level for 32 pulsed elements was approximately 1 MPa. An imaging test shows that the system achieves axial and lateral resolutions of 40 microm and 0.2 mm, respectively. The entire scanning head dissipates approximately 1.6 W at a pulse repetition rate of 750 Hz.

Airborne ultrasonic phased arrays using ferroelectrets: a new fabrication approach

In this work, a novel procedure that considerably simplifies the fabrication process of ferroelectret-based multielement array transducers is proposed and evaluated. Also, the potential of ferroelectrets being used as active material for air-coupled ultrasonic transducer design is demonstrated. The new construction method of multi-element transducers introduces 2 distinctive improvements. First, active ferroelectret material is not discretized into elements, and second, the need of structuring upper and/or lower electrodes in advance of the permanent polarization of the film is removed. The aperture discretization and the mechanical connection are achieved in one step using a through-thickness conductive tape. To validate the procedure, 2 linear array prototypes of 32 elements, with a pitch of 3.43 mm and a wide usable frequency range from 30 to 300 kHz, were built and evaluated using a commercial phased-array system. A low crosstalk among elements, below -30 dB, was measured by interferometry. Likewise, a homogeneous response of the array elements, with a maximum deviation of +/-1.8 dB, was obtained. Acoustic beam steering measurements were accomplished at different deflection angles using a calibrated microphone. The ultrasonic beam parameters, namely, lateral resolution, side lobe level, grating lobes, and focus depth, were congruent with theory. Acoustic images of a single reflector were obtained using one of the array elements as the receiver. Resulting images are also in accordance with numerical simulation, demonstrating the feasibility of using these arrays in pulse-echo mode. The proposed procedure simplifies the manufacturing of multidimensional arrays with arbitrary shape elements and not uniformly distributed. Furthermore, this concept can be extended to nonflat arrays as long as the transducer substrate conforms to a developable surface.