1
|
Shi L, Song J, Wang Y, Fu H, Patrick-Iwuanyanwu K, Zhang L, Lawrie CH, Zhang J. Applications of Carbon-Based Multivariable Chemical Sensors for Analyte Recognition. NANO-MICRO LETTERS 2025; 17:246. [PMID: 40316837 PMCID: PMC12048389 DOI: 10.1007/s40820-025-01741-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2025] [Accepted: 03/19/2025] [Indexed: 05/04/2025]
Abstract
Over recent decades, carbon-based chemical sensor technologies have advanced significantly. Nevertheless, significant opportunities persist for enhancing analyte recognition capabilities, particularly in complex environments. Conventional monovariable sensors exhibit inherent limitations, such as susceptibility to interference from coexisting analytes, which results in response overlap. Although sensor arrays, through modification of multiple sensing materials, offer a potential solution for analyte recognition, their practical applications are constrained by intricate material modification processes. In this context, multivariable chemical sensors have emerged as a promising alternative, enabling the generation of multiple outputs to construct a comprehensive sensing space for analyte recognition, while utilizing a single sensing material. Among various carbon-based materials, carbon nanotubes (CNTs) and graphene have emerged as ideal candidates for constructing high-performance chemical sensors, owing to their well-established batch fabrication processes, superior electrical properties, and outstanding sensing capabilities. This review examines the progress of carbon-based multivariable chemical sensors, focusing on CNTs/graphene as sensing materials and field-effect transistors as transducers for analyte recognition. The discussion encompasses fundamental aspects of these sensors, including sensing materials, sensor architectures, performance metrics, pattern recognition algorithms, and multivariable sensing mechanism. Furthermore, the review highlights innovative multivariable extraction schemes and their practical applications when integrated with advanced pattern recognition algorithms.
Collapse
Affiliation(s)
- Lin Shi
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China
| | - Jian Song
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China.
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China.
| | - Yu Wang
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China
| | - Heng Fu
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China
| | | | - Lei Zhang
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China.
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China.
| | - Charles H Lawrie
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China.
- Biogipuzkoa Health Research Institute, San Sebastian, 20014, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Spain.
- Radcliffe Department of Medicine, University of Oxford, Oxford, OX3 9DU, UK.
| | - Jianhua Zhang
- School of Microelectronics, Shanghai University, Shanghai, 201800, People's Republic of China.
- Sino-Swiss Institute of Advanced Technology (SSIAT), Shanghai University, Shanghai, 201899, People's Republic of China.
| |
Collapse
|
2
|
Fan X, He C, Ding J, Gao Q, Ma H, Lemme MC, Zhang W. Graphene MEMS and NEMS. MICROSYSTEMS & NANOENGINEERING 2024; 10:154. [PMID: 39468030 PMCID: PMC11519522 DOI: 10.1038/s41378-024-00791-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2024] [Revised: 07/22/2024] [Accepted: 08/14/2024] [Indexed: 10/30/2024]
Abstract
Graphene is being increasingly used as an interesting transducer membrane in micro- and nanoelectromechanical systems (MEMS and NEMS, respectively) due to its atomical thickness, extremely high carrier mobility, high mechanical strength, and piezoresistive electromechanical transductions. NEMS devices based on graphene feature increased sensitivity, reduced size, and new functionalities. In this review, we discuss the merits of graphene as a functional material for MEMS and NEMS, the related properties of graphene, the transduction mechanisms of graphene MEMS and NEMS, typical transfer methods for integrating graphene with MEMS substrates, methods for fabricating suspended graphene, and graphene patterning and electrical contact. Consequently, we provide an overview of devices based on suspended and nonsuspended graphene structures. Finally, we discuss the potential and challenges of applications of graphene in MEMS and NEMS. Owing to its unique features, graphene is a promising material for emerging MEMS, NEMS, and sensor applications.
Collapse
Affiliation(s)
- Xuge Fan
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, 100081, Beijing, China.
- Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
| | - Chang He
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, 100081, Beijing, China
| | - Jie Ding
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
| | - Qiang Gao
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, 100081, Beijing, China
| | - Hongliang Ma
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, 100081, Beijing, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China
| | - Max C Lemme
- Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
- AMO GmbH, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Wendong Zhang
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan, 030051, China.
- National Key Laboratory for Electronic Measurement Technology, School of Instrument and Electronics, North University of China, Taiyuan, 030051, China.
| |
Collapse
|
3
|
Lukas S, Esteki A, Rademacher N, Jangra V, Gross M, Wang Z, Ngo HD, Bäuscher M, Mackowiak P, Höppner K, Wehenkel DJ, van Rijn R, Lemme MC. High-Yield Large-Scale Suspended Graphene Membranes over Closed Cavities for Sensor Applications. ACS NANO 2024; 18:25614-25624. [PMID: 39244663 PMCID: PMC11411726 DOI: 10.1021/acsnano.4c06827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/10/2024]
Abstract
Suspended membranes of monatomic graphene exhibit great potential for applications in electronic and nanoelectromechanical devices. In this work, a "hot and dry" transfer process is demonstrated to address the fabrication and patterning challenges of large-area graphene membranes on top of closed, sealed cavities. Here, "hot" refers to the use of high temperature during transfer, promoting the adhesion. Additionally, "dry" refers to the absence of liquids when graphene and target substrate are brought into contact. The method leads to higher yields of intact suspended monolayer chemical vapor deposition (CVD) graphene and artificially stacked double-layer CVD graphene membranes than previously reported. The yield evaluation is performed using neural-network-based object detection in scanning electron microscopy (SEM) images, ascertaining high yields of intact membranes with large statistical accuracy. The suspended membranes are examined by Raman tomography and atomic force microscopy (AFM). The method is verified by applying the suspended graphene devices as piezoresistive pressure sensors. Our technology advances the application of suspended graphene membranes and can be extended to other two-dimensional materials.
Collapse
Affiliation(s)
- Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Ardeshir Esteki
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Nico Rademacher
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Vikas Jangra
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Michael Gross
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Zhenxing Wang
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Ha-Duong Ngo
- University of Applied Sciences Berlin, Wilhelminenhofstr. 75A (C 525), 12459 Berlin, Germany
| | - Manuel Bäuscher
- Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
| | - Piotr Mackowiak
- Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
| | - Katrin Höppner
- Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
| | | | - Richard van Rijn
- Applied Nanolayers B.V., Feldmannweg 17, 2628 CT Delft, The Netherlands
| | - Max C Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| |
Collapse
|
4
|
Samaha AC, Doumani J, Kritzell TE, Xu H, Baydin A, Ajayan PM, Tahchi ME, Kono J. Graphene Terahertz Devices for Sensing and Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401151. [PMID: 39087386 DOI: 10.1002/smll.202401151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 04/24/2024] [Indexed: 08/02/2024]
Abstract
Graphene-based terahertz (THz) devices have emerged as promising platforms for a variety of applications, leveraging graphene's unique optoelectronic properties. This review explores recent advancements in utilizing graphene in THz technology, focusing on two main aspects: THz molecular sensing and THz wave modulation. In molecular sensing, the environment-sensitive THz transmission and emission properties of graphene are utilized for enabling molecular adsorption detection and biomolecular sensing. This capability holds significant potential, from the detection of pesticides to DNA at high sensitivity and selectivity. In THz wave modulation, crucial for next-generation wireless communication systems, graphene demonstrates remarkable potential in absorption modulation when gated. Novel device structures, spectroscopic systems, and metasurface architectures have enabled enhanced absorption and wave modulation. Furthermore, techniques such as spatial phase modulation and polarization manipulation have been explored. From sensing to communication, graphene-based THz devices present a wide array of opportunities for future research and development. Finally, advancements in sensing techniques not only enhance biomolecular analysis but also contribute to optimizing graphene's properties for communication by enabling efficient modulation of electromagnetic waves. Conversely, developments in communication strategies inform and enhance sensing capabilities, establishing a mutually beneficial relationship.
Collapse
Affiliation(s)
- Anna-Christina Samaha
- Laboratory of Biomaterials and Intelligent Materials, Department of Physics, Faculty of Sciences 2, Lebanese University, Jdeidet, 90656, Lebanon
| | - Jacques Doumani
- Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, TX 77005, USA
| | - T Elijah Kritzell
- Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, TX 77005, USA
| | - Hongjing Xu
- Department of Physics and Astronomy, Rice University, 6100 Main Street, Houston, TX 77005, USA
| | - Andrey Baydin
- Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, TX 77005, USA
| | - Pulickel M Ajayan
- Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
| | - Mario El Tahchi
- Laboratory of Biomaterials and Intelligent Materials, Department of Physics, Faculty of Sciences 2, Lebanese University, Jdeidet, 90656, Lebanon
| | - Junichiro Kono
- Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Department of Physics and Astronomy, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Smalley-Curl Institute, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, TX 77005, USA
- Carbon Hub, Rice University, 6100 Main Street, Houston, TX 77005, USA
| |
Collapse
|
5
|
Logrado AL, Cassiano TDSA, da Cunha WF, Gargano R, E Silva GM, de Oliveira Neto PH. Width effects on bilayer graphene nanoribbon polarons. Phys Chem Chem Phys 2024; 26:14948-14959. [PMID: 38739011 DOI: 10.1039/d4cp00760c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Recent progress in nanoelectronics suggests that stacking armchair graphene nanoribbons (AGNRs) into bilayer systems can generate materials with emergent quasiparticle properties. In this context, the impact of width changes is especially relevant. However, its effect on charged carriers remains elusive. In this work, we investigate the effect of width and interlayer interaction changes on polaron states via a hybrid Hamiltonian that couples the electronic and lattice interactions. Results show the rising of two interlayer polarons: the non-symmetric and the symmetric. The coupling strength needed to induce the transition between states depends on the nanoribbon width, being at the most extreme case of ≈174 meV. Electronic properties such as the coupling strength threshold, carrier size, and gap are shown to respect the AGNR width family 3p, 3p + 1, and 3p + 2 rule. The findings demonstrate that strong interlayer interaction simultaneously delocalizes the carriers and reduces the gap up to 0.6 eV. Additionally, it is found that some layers are more prone to share charge, indicating a potential heterogeneous stacking where a particular electronic pathway is favored. The results present an encouraging prospect for integrating AGNR bilayers in future flexible electronics.
Collapse
Affiliation(s)
- André Lima Logrado
- Institute of Physics, University of Brasília, 70919-970, Brasília, Brazil.
| | | | | | - Ricardo Gargano
- Institute of Physics, University of Brasília, 70919-970, Brasília, Brazil.
| | | | - Pedro Henrique de Oliveira Neto
- Institute of Physics, University of Brasília, 70919-970, Brasília, Brazil.
- International Center of Physics, University of Brasília, 70919-970, Brazil
| |
Collapse
|
6
|
Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
Collapse
Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| |
Collapse
|
7
|
Xie L, Chen T, Dong X, Liu G, Li H, Yang N, Liu D, Xiao X. A Comparative Study of the Electronic Transport and Gas-Sensitive Properties of Graphene+, T-graphene, Net-graphene, and Biphenylene-Based Two-Dimensional Devices. ACS Sens 2023; 8:3510-3519. [PMID: 37736011 DOI: 10.1021/acssensors.3c01087] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/23/2023]
Abstract
The electronic transport properties of the four carbon isomers: graphene+, T-graphene, net-graphene, and biphenylene, as well as the gas-sensing properties to the nitrogen-based gas molecules including NO2, NO, and NH3 molecules, are systematically studied and comparatively analyzed by combining the density functional theory with the nonequilibrium Green's function. The four carbon isomers are metallic, especially with graphene+ being a Dirac metal due to the two Dirac cones present at the Fermi energy level. The two-dimensional devices based on these four carbon isomers exhibit good conduction properties in the order of biphenylene > T-graphene > graphene+ > net-graphene. More interestingly, net-graphene-based and biphenylene-based devices demonstrate significant anisotropic transport properties. The gas sensors based on the above four structures all have good selectivity and sensitivity to the NO2 molecule, among which T-graphene-based gas sensors are the most prominent with a maximum ΔI value of 39.98 μA, being only three-fifths of the original. In addition, graphene+-based and biphenylene-based gas sensors are also sensitive to the NO molecule with maximum ΔI values of 29.42 and 25.63 μA, respectively. However, the four gas sensors are all physically adsorbed for the NH3 molecule. By the adsorption energy, charge transfer, electron localization functions, and molecular projection of self-consistent Hamiltonian states, the mechanisms behind all properties can be clearly explained. This work shows the potential of graphene+, T-graphene, net-graphene, and biphenylene for the detection of toxic molecules of NO and NO2.
Collapse
Affiliation(s)
- Luzhen Xie
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
| | - Tong Chen
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiansheng Dong
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
| | - Guogang Liu
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
| | - Hui Li
- Department of Applied Physics, East China Jiao tong University, Nanchang 330013, China
| | - Ning Yang
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
| | - Desheng Liu
- School of Energy and Mechanical Engineering, Energy materials computing center, Jiangxi University of Science and Technology, Nanchang 330013, China
| | - Xianbo Xiao
- School of Computer Science, Jiangxi University of Chinese Medicine, Nanchang 330004, China
| |
Collapse
|
8
|
Pang J, Peng S, Hou C, Zhao H, Fan Y, Ye C, Zhang N, Wang T, Cao Y, Zhou W, Sun D, Wang K, Rümmeli MH, Liu H, Cuniberti G. Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles. ACS Sens 2023; 8:482-514. [PMID: 36656873 DOI: 10.1021/acssensors.2c02790] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Graphene remains of great interest in biomedical applications because of biocompatibility. Diseases relating to human senses interfere with life satisfaction and happiness. Therefore, the restoration by artificial organs or sensory devices may bring a bright future by the recovery of senses in patients. In this review, we update the most recent progress in graphene based sensors for mimicking human senses such as artificial retina for image sensors, artificial eardrums, gas sensors, chemical sensors, and tactile sensors. The brain-like processors are discussed based on conventional transistors as well as memristor related neuromorphic computing. The brain-machine interface is introduced for providing a single pathway. Besides, the artificial muscles based on graphene are summarized in the means of actuators in order to react to the physical world. Future opportunities remain for elevating the performances of human-like sensors and their clinical applications.
Collapse
Affiliation(s)
- Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center and Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Chongyang Hou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing 100088, People's Republic of China
| | - Yingju Fan
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Chen Ye
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Nuo Zhang
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Ting Wang
- State Key Laboratory of Biobased Material and Green Papermaking and People's Republic of China School of Bioengineering, Qilu University of Technology, Shandong Academy of Sciences, No. 3501 Daxue Road, Jinan 250353, People's Republic of China
| | - Yu Cao
- Key Laboratory of Modern Power System Simulation and Control & Renewable Energy Technology (Ministry of Education) and School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Ding Sun
- School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, P. R. China
| | - Kai Wang
- School of Electrical Engineering, Weihai Innovation Research Institute, Qingdao University, Qingdao 266000, China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden, D-01171, Germany.,College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.,Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland.,Institute for Complex Materials, IFW Dresden, 20 Helmholtz Strasse, Dresden 01069, Germany.,Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China.,State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials and Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
| |
Collapse
|
9
|
Tan D, Cao X, Huang J, Peng Y, Zeng L, Guo Q, Sun N, Bi S, Ji R, Jiang C. Monolayer MXene Nanoelectromechanical Piezo-Resonators with 0.2 Zeptogram Mass Resolution. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201443. [PMID: 35619285 PMCID: PMC9353497 DOI: 10.1002/advs.202201443] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Revised: 04/26/2022] [Indexed: 06/15/2023]
Abstract
2D materials-based nanoelectromechanical resonant systems with high sensitivity can precisely trace quantities of ultra-small mass molecules and therefore are broadly applied in biological analysis, chemical sensing, and physical detection. However, conventional optical and capacitive transconductance schemes struggle to measure high-order mode resonant effectively, which is the scientific key to further achieving higher accuracy and lower noise. In the present study, the different vibrations of monolayer Ti3 C2 Tx MXene piezo-resonators are investigated, and achieve a high-order f2,3 resonant mode with a ≈234.59 ± 0.05 MHz characteristic peak due to the special piezoelectrical structure of the Ti3 C2 Tx MXene layer. The effective measurements of signals have a low thermomechanical motion spectral density (9.66 ± 0.01 f m H z $\frac{{fm}}{{\sqrt {Hz} }}$ ) and an extensive dynamic range (118.49 ± 0.42 dB) with sub-zeptograms resolution (0.22 ± 0.01 zg) at 300 K temperature and 1 atm. Furthermore, the functional groups of the Ti3 C2 Tx MXene with unique adsorption properties enable a high working range ratio of ≈3100 and excellent repeatability. This Ti3 C2 Tx MXene device demonstrates encouraging performance advancements over other nano-resonators and will lead the related engineering applications including high-sensitivity mass detectors.
Collapse
Affiliation(s)
- Dongchen Tan
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Xuguang Cao
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Jijie Huang
- School of Materials EngineeringPurdue UniversityWest LafayetteIN47907USA
| | - Yan Peng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Lijun Zeng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Qinglei Guo
- Department of Material Science and EngineeringFrederick Seitz Material Research LaboratoryUniversity of Illinois at Urbana‐ChampaignUrbanaIL61801USA
| | - Nan Sun
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Sheng Bi
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Ruonan Ji
- Department of PhysicsNorthwestern Polytechnical UniversityXi'an710072China
| | - Chengming Jiang
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| |
Collapse
|
10
|
Biomolecular control over local gating in bilayer graphene induced by ferritin. iScience 2022; 25:104128. [PMID: 35434555 PMCID: PMC9010634 DOI: 10.1016/j.isci.2022.104128] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2021] [Revised: 01/11/2022] [Accepted: 03/17/2022] [Indexed: 11/30/2022] Open
Abstract
Electrical field-induced charge modulation in graphene-based devices at the nanoscale with ultrahigh density carrier accumulation is important for various practical applications. In bilayer graphene (BLG), inversion symmetry can simply be broken by an external electric field. However, control over charge carrier density at the nanometer scale is a challenging task. We demonstrate local gating of BLG in the nanometer range by adsorption of AfFtnAA (which is a bioengineered ferritin, an iron-storing globular protein with ∅ = 12 nm). Low-temperature electrical transport measurements with field-effect transistors with these AfFtnAA/BLG surfaces show hysteresis with two Dirac peaks. One peak at a gate voltage VBG = 35 V is associated with pristine BLG, while the second peak at VBG = 5 V results from local doping by ferritin. This charge trapping at the biomolecular length scale offers a straightforward and non-destructive method to alter the local electronic structure of BLG. Local gating with 12 nm resolution by charge trapping in ferritin. Adsorption of ferritin on graphene via non-invasive self-assembly. Charging controlled via iron oxide loading of ferritin. Visualization of individual ferritins on graphene by atomic force microscopy.
Collapse
|
11
|
Ramaraj SG, Nundy S, Zhao P, Elamaran D, Tahir AA, Hayakawa Y, Muruganathan M, Mizuta H, Kim SW. RF Sputtered Nb-Doped MoS 2 Thin Film for Effective Detection of NO 2 Gas Molecules: Theoretical and Experimental Studies. ACS OMEGA 2022; 7:10492-10501. [PMID: 35382281 PMCID: PMC8973088 DOI: 10.1021/acsomega.1c07274] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Accepted: 03/02/2022] [Indexed: 05/30/2023]
Abstract
Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS2 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS2 gas sensor synthesized through physical vapor deposition (PVD) toward NO2 at different temperatures. The electronic states of MoS2 and Nb-doped MOS2 monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS2 and its electronic properties. The Nb-doped MoS2 showed an ultrafast response and recovery time of t rec = 30/85 s toward 5 ppm of NO2 at their optimal operating temperature (100 °C). The experimental results complement the electron difference density functional theory calculation, showing both physisorption and chemisorption of NO2 gas molecules on niobium substitution doping in MoS2.
Collapse
Affiliation(s)
- Sankar Ganesh Ramaraj
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Srijita Nundy
- College
of Engineering, Mathematics and Physical Sciences, Renewable Energy, University of Exeter, Penryn, Cornwall TR10
9FE, United Kingdom
| | - Pin Zhao
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Durgadevi Elamaran
- Graduate
School of Science and Technology, Shizuoka
University, Hamamatsu 432-8011, Japan
| | - Asif Ali Tahir
- College
of Engineering, Mathematics and Physical Sciences, Renewable Energy, University of Exeter, Penryn, Cornwall TR10
9FE, United Kingdom
| | - Yasuhiro Hayakawa
- Research
Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
| | - Manoharan Muruganathan
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Hiroshi Mizuta
- School
of Materials Science, Japan Advanced Institute
of Science and Technology, Nomi 923-1211, Japan
| | - Sang-Woo Kim
- School
of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| |
Collapse
|
12
|
Agbonlahor OG, Muruganathan M, Ramaraj SG, Wang Z, Hammam AMM, Kareekunnan A, Maki H, Hattori M, Shimomai K, Mizuta H. Interfacial Ammonia Selectivity, Atmospheric Passivation, and Molecular Identification in Graphene-Nanopored Activated Carbon Molecular-Sieve Gas Sensors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61770-61779. [PMID: 34914376 DOI: 10.1021/acsami.1c19138] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene's inherent nonselectivity and strong atmospheric doping render most graphene-based sensors unsuitable for atmospheric applications in environmental monitoring of pollutants and breath detection of biomarkers for noninvasive medical diagnosis. Hence, demonstrations of graphene's gas sensitivity are often in inert environments such as nitrogen, consequently of little practical relevance. Herein, target gas sensing at the graphene-activated carbon interface of a graphene-nanopored activated carbon molecular-sieve sensor obtained via the postlithographic pyrolysis of Novolac resin residues on graphene nanoribbons is shown to simultaneously induce ammonia selectivity and atmospheric passivation of graphene. Consequently, 500 parts per trillion (ppt) ammonia sensitivity in atmospheric air is achieved with a response time of ∼3 s. The similar graphene and a-C workfunctions ensure that the ambipolar and gas-adsorption-induced charge transfer characteristics of pristine graphene are retained. Harnessing the van der Waals bonding memory and electrically tunable charge-transfer characteristics of the adsorbed molecules on the graphene channel, a molecular identification technique (charge neutrality point disparity) is developed and demonstrated to be suitable even at parts per billion (ppb) gas concentrations. The selectivity and atmospheric passivation induced by the graphene-activated carbon interface enable atmospheric applications of graphene sensors in environmental monitoring and noninvasive medical diagnosis.
Collapse
Affiliation(s)
- Osazuwa G Agbonlahor
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Manoharan Muruganathan
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Sankar G Ramaraj
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Zhongwang Wang
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Ahmed M M Hammam
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
- Physics Department, Faculty of Science, Minia University, 11432 Main Road-Shalaby Land, Minia 61519, Egypt
| | - Afsal Kareekunnan
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Hisashi Maki
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
- TAIYO YUDEN CO., LTD. R&D Center, 5607-2, Nakamuroda-machi, Takasaki-shi, Gunma 370-3347, Japan
| | - Masashi Hattori
- TAIYO YUDEN CO., LTD. R&D Center, 5607-2, Nakamuroda-machi, Takasaki-shi, Gunma 370-3347, Japan
| | - Kenichi Shimomai
- TAIYO YUDEN CO., LTD. R&D Center, 5607-2, Nakamuroda-machi, Takasaki-shi, Gunma 370-3347, Japan
| | - Hiroshi Mizuta
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd., J.J. Thomson Avenue, Cambridge CB3 0HE, U.K
| |
Collapse
|
13
|
Dervieux E, Théron M, Uhring W. Carbon Dioxide Sensing-Biomedical Applications to Human Subjects. SENSORS (BASEL, SWITZERLAND) 2021; 22:188. [PMID: 35009731 PMCID: PMC8749784 DOI: 10.3390/s22010188] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Revised: 12/13/2021] [Accepted: 12/20/2021] [Indexed: 02/06/2023]
Abstract
Carbon dioxide (CO2) monitoring in human subjects is of crucial importance in medical practice. Transcutaneous monitors based on the Stow-Severinghaus electrode make a good alternative to the painful and risky arterial "blood gases" sampling. Yet, such monitors are not only expensive, but also bulky and continuously drifting, requiring frequent recalibrations by trained medical staff. Aiming at finding alternatives, the full panel of CO2 measurement techniques is thoroughly reviewed. The physicochemical working principle of each sensing technique is given, as well as some typical merit criteria, advantages, and drawbacks. An overview of the main CO2 monitoring methods and sites routinely used in clinical practice is also provided, revealing their constraints and specificities. The reviewed CO2 sensing techniques are then evaluated in view of the latter clinical constraints and transcutaneous sensing coupled to a dye-based fluorescence CO2 sensing seems to offer the best potential for the development of a future non-invasive clinical CO2 monitor.
Collapse
Affiliation(s)
- Emmanuel Dervieux
- BiOSENCY, 1137a Avenue des Champs Blancs, 35510 Cesson-Sévigné, France
| | - Michaël Théron
- ORPHY, Université de Bretagne Occidentale, 6 Avenue Victor le Gorgeu, 29238 Brest, France;
| | - Wilfried Uhring
- ICube, University of Strasbourg and CNRS, 23 rue du Loess, CEDEX, 67037 Strasbourg, France;
| |
Collapse
|
14
|
Kulakova II, Lisichkin GV. Prospects for Using Graphene Nanomaterials: Sorbents, Membranes, and Gas Sensors. RUSS J APPL CHEM+ 2021. [DOI: 10.1134/s1070427221090019] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
|
15
|
Ma Z, Tian Z, Li X, You C, Wang Y, Mei Y, Di Z. Self-Rolling of Monolayer Graphene for Ultrasensitive Molecular Sensing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49146-49152. [PMID: 34617726 DOI: 10.1021/acsami.1c12592] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The controllable manipulation of graphene to create three-dimensional (3D) structures is an intriguing approach for favorably tuning its properties and creating new types of 3D devices. However, due to extremely low bending stiffnesses, it is rather challenging to construct monolayer graphene into stable 3D structures. Here, we demonstrate the stable formation of monolayer graphene microtubes with accompanying pre-patterned strain layers. The diameter of graphene microtubes can be effectively tuned by changing the thickness of the strain layers. Benefiting from a high surface-to-volume ratio of the tubular geometry, the 3D geometry leads to a prominent Raman enhancement, which was further applied to molecular sensing. The R6G molecules on graphene microtubes can be detected even for a concentration as low as 10-11 M. We believe that this method can be a generalized way to realize the 3D tubular structure of other 2D materials.
Collapse
Affiliation(s)
- Zhe Ma
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ziao Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Xing Li
- Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, China
| | - Chunyu You
- Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, China
| | - Yalan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongfeng Mei
- Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| |
Collapse
|
16
|
Ikuta T, Tamaki T, Masai H, Nakanishi R, Endo K, Terao J, Maehashi K. Electrical detection of ppb region NO 2 using Mg-porphyrin-modified graphene field-effect transistors. NANOSCALE ADVANCES 2021; 3:5793-5800. [PMID: 36132664 PMCID: PMC9417097 DOI: 10.1039/d1na00519g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 07/28/2021] [Indexed: 06/16/2023]
Abstract
The trace detection of NO2 through small sensors is essential for air quality measurement and the health field; however, small sensors based on electrical devices cannot detect NO2 with the desired selectivity and quantitativity in the parts per billion (ppb) concentration region. In this study, we fabricated metalloporphyrin-modified graphene field-effect transistors (FETs). Mg-, Ni-, Cu-, and Co-porphyrins were deposited on the graphene FETs, and the transfer characteristics were measured. With the introduction of NO2 in the ppb concentration region, the FETs of pristine graphene and Ni-, Cu-, and Co-porphyrin-modified graphene showed an insufficient response, whereas the Mg-porphyrin-modified graphene exhibited large voltage shifts in the transport characteristics. This indicates that Mg-porphyrin acts as an adsorption site for NO2 molecules. An analysis of the Dirac-point voltage shifts with the introduction of NO2 indicates that the shifts were well-fitted with the Langmuir adsorption isotherm model, and the limit of detection for NO2 was found to be 0.3 ppb in N2. The relationship between the mobility and the Dirac-point voltage shift with the NO2 concentration shows that the complex of NO2 and Mg-porphyrin behaves as a point-like charge impurity. Moreover, the Mg-porphyrin-modified graphene FETs show less response to other gases (O2, H2, acetic acid, trimethylamine, methanol, and hexane), thus indicating high sensitivity for NO2 detection. Furthermore, we successfully demonstrated the quantitative detection of NO2 in air, which is near the environmental standards. In conclusion, the results of the Mg-porphyrin-modified graphene FETs enable a rapid, easy, and selective detectability.
Collapse
Affiliation(s)
- Takashi Ikuta
- Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology 2-24-16, Nakacho Koganei Tokyo 184-8588 Japan
| | - Takashi Tamaki
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo 3-8-1, Komaba Meguro-ku Tokyo 153-8902 Japan
| | - Hiroshi Masai
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo 3-8-1, Komaba Meguro-ku Tokyo 153-8902 Japan
| | - Ryudai Nakanishi
- Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology 2-24-16, Nakacho Koganei Tokyo 184-8588 Japan
| | - Kitaro Endo
- Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology 2-24-16, Nakacho Koganei Tokyo 184-8588 Japan
| | - Jun Terao
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo 3-8-1, Komaba Meguro-ku Tokyo 153-8902 Japan
| | - Kenzo Maehashi
- Division of Advanced Applied Physics, Institute of Engineering, Tokyo University of Agriculture and Technology 2-24-16, Nakacho Koganei Tokyo 184-8588 Japan
| |
Collapse
|
17
|
An N, Tan T, Peng Z, Qin C, Yuan Z, Bi L, Liao C, Wang Y, Rao Y, Soavi G, Yao B. Electrically Tunable Four-Wave-Mixing in Graphene Heterogeneous Fiber for Individual Gas Molecule Detection. NANO LETTERS 2020; 20:6473-6480. [PMID: 32786928 DOI: 10.1021/acs.nanolett.0c02174] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Detection of individual molecules is the ultimate goal of any chemical sensor. In the case of gas detection, such resolution has been achieved in advanced nanoscale electronic solid-state sensors, but it has not been possible so far in integrated photonic devices, where the weak light-molecule interaction is typically hidden by noise. Here, we demonstrate a scheme to generate ultrasensitive down-conversion four-wave-mixing (FWM) in a graphene bipolar-junction-transistor heterogeneous D-shaped fiber. In the communication band, the FWM conversion efficiency can change steeply when the graphene Fermi level approaches 0.4 eV. In this condition, we exploit our unique two-step optoelectronic heterodyne detection scheme, and we achieve real-time individual gas molecule detection in vacuum. Such combination of graphene strong nonlinearities, electrical tunability, and all-fiber integration paves the way toward the design of versatile high-performance graphene photonic devices.
Collapse
Affiliation(s)
- Ning An
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Teng Tan
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
- Research Centre of Optical Fiber Sensing, Zhejiang Laboratory, Hangzhou 310000, China
| | - Zheng Peng
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenye Qin
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhongye Yuan
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lei Bi
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Changrui Liao
- Guangdong and Hong Kong Joint Research Center for Optical Fiber Sensors, Shenzhen University, Shenzhen 518060, China
| | - Yiping Wang
- Guangdong and Hong Kong Joint Research Center for Optical Fiber Sensors, Shenzhen University, Shenzhen 518060, China
| | - Yunjiang Rao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
- Research Centre of Optical Fiber Sensing, Zhejiang Laboratory, Hangzhou 310000, China
| | - Giancarlo Soavi
- Institute of Solid State Physics, Abbe Center of Photonics, Friedrich-Schiller-University Jena, Jena 07743, Germany
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China
| |
Collapse
|
18
|
Agbonlahor OG, Muruganathan M, Imamura T, Mizuta H. Adsorbed Molecules as Interchangeable Dopants and Scatterers with a Van der Waals Bonding Memory in Graphene Sensors. ACS Sens 2020; 5:2003-2009. [PMID: 32597169 DOI: 10.1021/acssensors.0c00403] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Molecular adsorption-induced doping and scattering play a central role in the detection mechanism of graphene gas sensors. However, while the doping contributions in electric field-enhanced gas sensing is well studied, an understanding of the effects of scattering is still lacking. In this work, the scattering contribution of the graphene-molecule van der Waals (vdW) complex is studied under various electric fields and the associated vdW bonding retention in the complex is investigated. We show that contrary to the generally opined view, doping does not always dominate the graphene-molecule vdW complex interaction and consequently the conductivity response in graphene sensors, rather the vdW complex interaction only shows doping-dominated interaction at zero electric fields while scattering increases with electric field modulation. The experimentally observed electric field-dependent scattering response agrees with electron difference density analysis from density functional theory (DFT) calculations, which shows that scattering is directly dependent on the electric field-induced molecular reorientation as well as the redistribution and delocalization of charge in the graphene-gas molecule vdW complex. Furthermore, "vdW bonding memory", i.e., retention of electric field-induced vdW bonding states after turning off the electric field, is observed and shown to result from the high binding energies of the vdW complexes, which are an order of magnitude higher than the sensing measurement thermal energy. This vdW bonding memory in the graphene-molecule complexes is important for the molecular identification of adsorbed gases based on their tunable charge transfer characteristics.
Collapse
Affiliation(s)
- Osazuwa G. Agbonlahor
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Manoharan Muruganathan
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Tomonori Imamura
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
| | - Hiroshi Mizuta
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd., J.J. Thomson Avenue, CB3 0HE Cambridge, United Kingdom
| |
Collapse
|
19
|
Lemme MC, Wagner S, Lee K, Fan X, Verbiest GJ, Wittmann S, Lukas S, Dolleman RJ, Niklaus F, van der Zant HSJ, Duesberg GS, Steeneken PG. Nanoelectromechanical Sensors Based on Suspended 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:8748602. [PMID: 32766550 PMCID: PMC7388062 DOI: 10.34133/2020/8748602] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2020] [Accepted: 04/23/2020] [Indexed: 01/09/2023]
Abstract
The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.
Collapse
Affiliation(s)
- Max C. Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Stefan Wagner
- AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Kangho Lee
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Xuge Fan
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas Väg 10, 10044 Stockholm, Sweden
| | - Gerard J. Verbiest
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, Netherlands
| | | | - Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
| | - Robin J. Dolleman
- 2nd Institute of Physics, RWTH Aachen University, Otto-Blumenthal-Str., 52074 Aachen, Germany
| | - Frank Niklaus
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas Väg 10, 10044 Stockholm, Sweden
| | - Herre S. J. van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Georg S. Duesberg
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Peter G. Steeneken
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| |
Collapse
|
20
|
Design of Graphene Phononic Crystals for Heat Phonon Engineering. MICROMACHINES 2020; 11:mi11070655. [PMID: 32630087 PMCID: PMC7408078 DOI: 10.3390/mi11070655] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Revised: 06/29/2020] [Accepted: 06/30/2020] [Indexed: 11/29/2022]
Abstract
Controlling the heat transport and thermal conductivity through a material is of prime importance for thermoelectric applications. Phononic crystals, which are a nanostructured array of specially designed pores, can suppress heat transportation owing to the phonon wave interference, resulting in bandgap formation in their band structure. To control heat phonon propagation in thermoelectric devices, phononic crystals with a bandgap in the THz regime are desirable. In this study, we carried out simulation on snowflake shaped phononic crystal and obtained several phononic bandgaps in the THz regime, with the highest being at ≈2 THz. The phononic bandgap position and the width of the bandgap were found to be tunable by varying the neck-length of the snowflake structure. A unique bandgap map computed by varying the neck-length continuously provides enormous amounts of information as to the size and position of the phononic bandgap for various pore dimensions. We have also carried out transmission spectrum analysis and found good agreement with the band structure calculations. The pressure map visualized at various frequencies validates the effectiveness of snowflake shaped nano-pores in suppressing the phonons partially or completely, depending on the transmission probabilities.
Collapse
|
21
|
Tan T, Jiang X, Wang C, Yao B, Zhang H. 2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000058. [PMID: 32537415 PMCID: PMC7284198 DOI: 10.1002/advs.202000058] [Citation(s) in RCA: 125] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Revised: 02/20/2020] [Accepted: 02/21/2020] [Indexed: 05/19/2023]
Abstract
Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light-mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.
Collapse
Affiliation(s)
- Teng Tan
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China)School of Information and Communication EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China
| | - Xiantao Jiang
- Shenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)International Collaboration Laboratory of 2D Materials for Optoelectronic Science and TechnologyCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Cong Wang
- Shenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)International Collaboration Laboratory of 2D Materials for Optoelectronic Science and TechnologyCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China)School of Information and Communication EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China
| | - Han Zhang
- Shenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)International Collaboration Laboratory of 2D Materials for Optoelectronic Science and TechnologyCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| |
Collapse
|
22
|
Understanding the Detection Mechanisms and Ability of Molecular Hydrogen on Three-Dimensional Bicontinuous Nanoporous Reduced Graphene Oxide. MATERIALS 2020; 13:ma13102259. [PMID: 32422953 PMCID: PMC7288210 DOI: 10.3390/ma13102259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Revised: 05/07/2020] [Accepted: 05/12/2020] [Indexed: 12/02/2022]
Abstract
Environmental safety has become increasingly important with respect to hydrogen use in society. Monitoring techniques for explosive gaseous hydrogen are essential to ensure safety in sustainable hydrogen utilization. Here, we reveal molecular hydrogen detection mechanisms with monolithic three-dimensional nanoporous reduced graphene oxide under gaseous hydrogen flow and at room temperature. Nanoporous reduced graphene oxide significantly increased molecular hydrogen physisorption without the need to employ catalytic metals or heating. This can be explained by the significantly increased surface area in comparison to two-dimensional graphene sheets and conventional reduced graphene oxide flakes. Using this large surface area, molecular hydrogen adsorption behaviors were accurately observed. In particular, we found that the electrical resistance firstly decreased and then gradually increased with higher gaseous hydrogen concentrations. The resistance decrease was due to charge transfer from the molecular hydrogen to the reduced graphene oxide at adsorbed molecular hydrogen concentrations lower than 2.8 ppm; conversely, the resistance increase was a result of Coulomb scattering effects at adsorbed molecular hydrogen concentrations exceeding 5.0 ppm, as supported by density functional theory. These findings not only provide the detailed adsorption mechanisms of molecular hydrogen, but also advance the development of catalyst-free non-heated physisorption-type molecular detection devices.
Collapse
|
23
|
Kidane S, Ishida H, Sawada K, Takahashi K. A suspended graphene-based optical interferometric surface stress sensor for selective biomolecular detection. NANOSCALE ADVANCES 2020; 2:1431-1436. [PMID: 36132319 PMCID: PMC9417660 DOI: 10.1039/c9na00788a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Accepted: 03/18/2020] [Indexed: 06/13/2023]
Abstract
Graphene-based sensors are of great interest in research due to their high specific surface area and high electron mobility that make them suitable for numerous advanced applications. In this paper, selective molecular detection using an antigen-antibody reaction on suspended graphene with a cavity-sealing structure was demonstrated. The suspended graphene sealed nanocavities in a pre-patterned Si substrate, which increased robustness and allowed the use of wet chemical processes for surface functionalization of the suspended graphene to achieve selective molecular binding. The selectivity was evaluated by nanomechanical deflection induced by molecular adsorption on the suspended graphene, resulting in spectral shifts in the optical interference between the suspended graphene and Si substrate. The chemically functionalized suspended graphene enables the analysis of intermolecular interactions and molecular kinetics by colorimetry using optical interference.
Collapse
Affiliation(s)
- Shin Kidane
- Toyohashi University of Technology Toyohashi Aichi 441-8580 Japan
| | - Hayato Ishida
- Toyohashi University of Technology Toyohashi Aichi 441-8580 Japan
| | - Kazuaki Sawada
- Toyohashi University of Technology Toyohashi Aichi 441-8580 Japan
| | | |
Collapse
|
24
|
Lynall D, Tseng AC, Nair SV, Savelyev IG, Blumin M, Wang S, Wang ZM, Ruda HE. Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime. ACS NANO 2020; 14:964-973. [PMID: 31904218 DOI: 10.1021/acsnano.9b08253] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Much recent attention has been focused on the development of field-effect transistors based on low-dimensional nanostructures for the detection and manipulation of molecules. Because of their extraordinarily high charge sensitivity, InAs nanowires present an excellent material system in which to probe and study the behavior of molecules on their surfaces and elucidate the underlying mechanisms dictating the sensor response. So far, chemical sensors have relied on slow, activated processes restricting their applicability to high temperatures and macroscopic adsorbate coverages. Here, we identify the transition into a highly sensitive regime of chemical sensing at ultralow concentrations (<1 ppm) via physisorption at room temperature using field-effect transistors with channels composed of several thousand InAs nanowires and ethanol as a simple analyte molecule. In this regime, the nanowire conductivity is dictated by a local gating effect from individual dipoles, leading to a nonlinear enhancement of the sensitivity. At higher concentrations (>1 ppm), the nanowire channel is globally gated by a uniform dipole layer at the nanowire surface. The former leads to a dramatic increase in sensitivity due to weakened screening and the one-dimensional geometry of the nanowire. In this regime, we detect concentrations of ethanol vapor as low as 10 ppb, 100 times below the lowest concentrations previously reported. Furthermore, we demonstrate electrostatic control of the sensitivity and dynamic range of the InAs nanowire-based sensor and construct a unified model that accurately describes and predicts the sensor response over the tested concentration range (10 ppb to 10 ppm).
Collapse
Affiliation(s)
- David Lynall
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , China
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Alex C Tseng
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Selvakumar V Nair
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Igor G Savelyev
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Marina Blumin
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
| | - Shiliang Wang
- Defence Research and Development Canada Suffield , Medicine Hat , Alberta T1A 8K6 , Canada
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , China
| | - Harry E Ruda
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , China
- Centre for Advanced Nanotechnology , University of Toronto , 170 College Street , Toronto , Ontario M5S 3E3 , Canada
- Department of Materials Science and Engineering , University of Toronto , 184 College Street , Toronto , Ontario M5S 3E4 , Canada
- Department of Electrical and Computer Engineering , University of Toronto , 10 Kings College Road , Toronto , Ontario M5S 3G4 , Canada
| |
Collapse
|
25
|
Brown PA, Fischer SA, Kołacz J, Spillmann C, Gunlycke D. Thermotropic liquid crystal (5CB) on two-dimensional materials. Phys Rev E 2020; 100:062701. [PMID: 31962509 DOI: 10.1103/physreve.100.062701] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2019] [Indexed: 11/07/2022]
Abstract
We present ground-state electronic properties of the liquid crystal 4-cyano-4^{'}-pentylbiphenyl (5CB) on the two-dimensional materials monolayer graphene, hexagonal boron nitride, and phosphorene. Our density functional theory results show that the physisorption is robust on all surfaces with the strongest binding of 5CB on phosphorene. All surfaces exhibit flexural distortion, especially monolayer graphene and hexagonal boron nitride. While we find type-I alignment for all three substrates, meaning the Fermi level of the system is in the HOMO-LUMO gap of 5CB, the band structures are qualitatively different. Unlike for graphene and phosphorene, the HOMO-LUMO of 5CB appear as localized states within the band gap of boron nitride. In addition, we find that the valence band for boron nitride is sensitive to the orientation of 5CB relative to the surface. The qualitatively different band structures demonstrate the importance of substrate selection for tailoring the electronic and optoelectronic properties of nematic liquid crystals on two-dimensional materials.
Collapse
Affiliation(s)
- Paul A Brown
- ASEE Post-Doctoral Fellow at the U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Sean A Fischer
- U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Jakub Kołacz
- U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | | | | |
Collapse
|
26
|
Camargo Moreira ÓL, Cheng WY, Fuh HR, Chien WC, Yan W, Fei H, Xu H, Zhang D, Chen Y, Zhao Y, Lv Y, Wu G, Lv C, Arora SK, Ó Coileáin C, Heng C, Chang CR, Wu HC. High Selectivity Gas Sensing and Charge Transfer of SnSe 2. ACS Sens 2019; 4:2546-2552. [PMID: 31456397 DOI: 10.1021/acssensors.9b01461] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe2 grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe2 sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe2.
Collapse
Affiliation(s)
| | | | - Huei-Ru Fuh
- Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City 320, Taiwan, ROC
| | | | - Wenjie Yan
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Haifeng Fei
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Hongjun Xu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Duan Zhang
- Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, P. R. China
| | - Yanhui Chen
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yanfeng Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chengzhai Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Sunil K. Arora
- Centre for Nano Science and Nano Technology, Panjab University, Chandigarh160014, India
| | - Cormac Ó Coileáin
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Chenglin Heng
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | | | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| |
Collapse
|
27
|
Wu J, Wu Z, Ding H, Yang X, Wei Y, Xiao M, Yang Z, Yang BR, Liu C, Lu X, Qiu L, Wang X. Three-Dimensional-Structured Boron- and Nitrogen-Doped Graphene Hydrogel Enabling High-Sensitivity NO 2 Detection at Room Temperature. ACS Sens 2019; 4:1889-1898. [PMID: 31250650 DOI: 10.1021/acssensors.9b00769] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Heteroatom-doping has been proved as an effective method to modulate the electronic, physical, and chemical properties of graphene (Gr). Developing a new strategy of heteroatom-doping for high-performance gas sensing is a pivotal issue. Here, we demonstrate novel Gr-based gas sensors through three-dimensional (3D)-structured B-/N-doping nanomaterials for high-performance NO2 sensing. The 3D porous B- and N-doped reduced graphene oxide hydrogels (RGOH) are synthesized via one-step hydrothermal self-assembly and employed as transducing materials to fabricate room-temperature high-performance chemiresistors. The systematic characterizations of the as-synthesized B- and N-RGOH clearly show the uniform doping of the B and N heteroatoms and the formation of B and N components with C/O. In comparison with the pristine RGOH counterpart, the 3D B- and N-RGOH sensors exhibit 38.9 and 18.0 times enhanced responses toward 800 ppb NO2, respectively, suggesting the remarkable doping effect of the heteroatoms in improving the sensitivity. Significantly, B- and N-RGOH display the exceptionally low limit of detection of 9 and 14 ppb NO2, respectively, which are much lower than the threshold limit recommended by the U.S. Environmental Protection Agency. In addition, the developed NO2 sensors show good linearity, reversibility, fast recovery, and impressive selectivity. This work opens up a new avenue to fabricate room-temperature and high-performance NO2 sensors by incorporating B and N heteroatoms into 3D RGOH via a convenient hydrothermal self-assembly approach.
Collapse
Affiliation(s)
- Jin Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Zixuan Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Haojun Ding
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xing Yang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yaoming Wei
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Mingquan Xiao
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Ziqi Yang
- School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China
| | - Bo-Ru Yang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xing Lu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Lin Qiu
- School of Energy and Environmental Engineering, University of Science and Technology Beijing, 100083 Beijing, China
| | - Xiaotian Wang
- School of Chemistry, Beihang University, 100191 Beijing, China
| |
Collapse
|
28
|
Shtepliuk I, Yakimova R. Interaction of epitaxial graphene with heavy metals: towards novel sensing platform. NANOTECHNOLOGY 2019; 30:294002. [PMID: 30939456 DOI: 10.1088/1361-6528/ab1546] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Development of next-generation sensors based on graphene materials, especially epitaxial graphene (EG) as the most promising representative, with desirable cross-reactivity to heavy metals (HMs) is of great technological significance in the virtue of enormous impact on environmental sensorics. Nevertheless, the mechanisms by which EG responds to toxic HMs exposure and then produces the output signal are still obscure. In the present study, the nature of interaction of toxic HMs, e.g. Cd, Hg and Pb in neutral charge state and EG on Si-face SiC in the absence and in the presence of pure water solution has been investigated using density functional theory with the inclusion of dispersion correction and cluster model of EG. The gas-phase calculations showed that adsorbed electron-donating Cd and Hg adatoms on EG are most stable when bonded to hollow sites, while Pb species prefer to sit above bridge sites. By using non-covalent interaction analysis, charge decomposition analysis, overlap population density of states analysis and topological analysis, it was found that the interaction between Cd or Hg and EG is non-bonding in nature and is mainly governed by van der Waals forces, while Pb adsorption is followed by the formation of anti-bonding orbitals in vacuum conditions and bonding orbitals in water. The role of solvent in the adsorption behavior of HMs is studied and discussed. The present theoretical analysis is in good agreement with recent experimental results towards discriminative electrochemical analysis of the toxic HMs in aqueous solutions at critically low concentrations.
Collapse
|
29
|
The enhanced NO2 sensing properties of SnO2 nanoparticles/reduced graphene oxide composite. J Colloid Interface Sci 2019; 537:228-237. [DOI: 10.1016/j.jcis.2018.11.009] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Revised: 10/21/2018] [Accepted: 11/04/2018] [Indexed: 11/22/2022]
|
30
|
Wang L, Chen S, Li W, Wang K, Lou Z, Shen G. Grain-Boundary-Induced Drastic Sensing Performance Enhancement of Polycrystalline-Microwire Printed Gas Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804583. [PMID: 30484929 DOI: 10.1002/adma.201804583] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Revised: 10/04/2018] [Indexed: 05/13/2023]
Abstract
The development of materials with high efficiency and stable signal output in a bent state is important for flexible electronics. Grain boundaries provide lasting inspiration and a promising avenue for designing advanced functionalities using nanomaterials. Combining bulk defects in polycrystalline materials is shown to result in rich new electronic structures, catalytic activities, and mechanical properties for many applications. However, direct evidence that grain boundaries can create new physicochemical properties in flexible electronics is lacking. Here, a combination of bulk electrosensitive measurements, density functional theory calculations, and atomic force microscopy technology with quantitative nanomechanical mapping is used to show that grain boundaries in polycrystalline wires are more active and mechanically stable than single-crystalline wires for real-time detection of chemical analytes. The existence of a grain boundary improves the electronic and mechanical properties, which activate and stabilize materials, and allow new opportunities to design highly sensitive, flexible chemical sensors.
Collapse
Affiliation(s)
- Lili Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shuai Chen
- College of Physics and Mathematics and Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing, 100083, China
| | - Wei Li
- Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, Jilin University, Changchun, 130012, China
| | - Kang Wang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
31
|
Hu KM, Xue ZY, Liu YQ, Long H, Peng B, Yan H, Di ZF, Wang X, Lin L, Zhang WM. Tension-Induced Raman Enhancement of Graphene Membranes in the Stretched State. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804337. [PMID: 30506848 DOI: 10.1002/smll.201804337] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2018] [Revised: 11/14/2018] [Indexed: 06/09/2023]
Abstract
The intensity ratio of the 2D band to the G band, I2D /IG , is a good criterion in selecting high quality monolayer graphene samples; however, the evaluation of the ultimate value of I2D /IG for intrinsic monolayer graphene is a challenging yet interesting issue. Here, an interesting tension-induced Raman enhancement phenomenon is reported in supported graphene membranes, which show a transition from the corrugated state to the stretched state in the vicinity of wells. The I2D /IG of substrate-supported graphene membranes near wells are significantly enhanced up to 16.74, which is the highest experimental value to the best of knowledge, increasing by more than 600% when the testing points approach the well edges.The macroscopic origin of this phenomenon is that corrugated graphene membranes are stretched by built-in tensions. A lattice dynamic model is proposed to successfully reveal the microscopic mechanism of this phenomenon. The theoretical results agree well with the experimental data, demonstrating that tensile stresses can depress the amplitude of in-plane vibration of sp2 -bonded carbon atoms and result in the decrease in the G band intensity. This work can be helpful in furthering the development of the method of suppressing small ripples in graphene and acquiring ultraflat 2D materials.
Collapse
Affiliation(s)
- Kai-Ming Hu
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhong-Ying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Yun-Qi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Hu Long
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Bo Peng
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Han Yan
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zeng-Feng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Xi Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
| | - Liwei Lin
- Berkeley Sensor and Actuator Center, University of California at Berkeley, 5101-B Etcheverry, Berkeley, CA, 94720-1774, USA
| | - Wen-Ming Zhang
- State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| |
Collapse
|
32
|
Shtepliuk I, Yakimova R. Interband Absorption in Few-Layer Graphene Quantum Dots: Effect of Heavy Metals. MATERIALS 2018; 11:ma11071217. [PMID: 30012974 PMCID: PMC6073920 DOI: 10.3390/ma11071217] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/26/2018] [Revised: 07/12/2018] [Accepted: 07/13/2018] [Indexed: 01/28/2023]
Abstract
Monolayer, bilayer, and trilayer graphene quantum dots (GQDs) with different binding abilities to elemental heavy metals (HMs: Cd, Hg, and Pb) were designed, and their electronic and optical properties were investigated theoretically to understand deeply the optical response under heavy metal exposure. To gain insight into the nature of interband absorption, we performed density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations for thickness-varying GQDs. We found that the interband absorption in GQDs can be efficiently tuned by controlling the thickness of GQDs to attain the desirable coloration of the interacting complex. We also show that the strength of the interaction between GQDs and Cd, Hg, and Pb is strongly dependent on the number of sp2-bonded layers. The results suggest that the thickness of GQDs plays an important role in governing the hybridization between locally-excited (LE) and charge-transfer (CT) states of the GQDs. Based on the partial density-of-states (DOS) analysis and in-depth knowledge of excited states, the mechanisms underlying the interband absorption are discussed. This study suggests that GQDs would show an improved sensing performance in the selective colorimetric detection of lead by the thickness control.
Collapse
Affiliation(s)
- Ivan Shtepliuk
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
- Frantsevich Institute for Problems of Materials Science, NASU, 142 Kyiv, Ukraine.
| | - Rositsa Yakimova
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
| |
Collapse
|
33
|
Xu S, Zhao H, Xu Y, Xu R, Lei Y. Carrier Mobility-Dominated Gas Sensing: A Room-Temperature Gas-Sensing Mode for SnO 2 Nanorod Array Sensors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:13895-13902. [PMID: 29595250 DOI: 10.1021/acsami.8b03953] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Adsorption-induced change of carrier density is presently dominating inorganic semiconductor gas sensing, which is usually operated at a high temperature. Besides carrier density, other carrier characteristics might also play a critical role in gas sensing. Here, we show that carrier mobility can be an efficient parameter to dominate gas sensing, by which room-temperature gas sensing of inorganic semiconductors is realized via a carrier mobility-dominated gas-sensing (CMDGS) mode. To demonstrate CMDGS, we design and prepare a gas sensor based on a regular array of SnO2 nanorods on a bottom film. It is found that the key for determining the gas-sensing mode is adjusting the length of the arrayed nanorods. With the change in the nanorod length from 340 to 40 nm, the gas-sensing behavior changes from the conventional carrier-density mode to a complete carrier-mobility mode. Moreover, compared to the carrier density-dominating gas sensing, the proposed CMDGS mode enhances the sensor sensitivity. CMDGS proves to be an emerging gas-sensing mode for designing inorganic semiconductor gas sensors with high performances at room temperature.
Collapse
Affiliation(s)
- Shipu Xu
- Institute für Physik & IMN MacroNano (ZIK) , Technische Universität Ilmenau , Ilmenau 98693 , Germany
| | - Huaping Zhao
- Institute für Physik & IMN MacroNano (ZIK) , Technische Universität Ilmenau , Ilmenau 98693 , Germany
| | - Yang Xu
- Institute für Physik & IMN MacroNano (ZIK) , Technische Universität Ilmenau , Ilmenau 98693 , Germany
| | - Rui Xu
- Institute für Physik & IMN MacroNano (ZIK) , Technische Universität Ilmenau , Ilmenau 98693 , Germany
| | - Yong Lei
- Institute für Physik & IMN MacroNano (ZIK) , Technische Universität Ilmenau , Ilmenau 98693 , Germany
| |
Collapse
|
34
|
Singh E, Meyyappan M, Nalwa HS. Flexible Graphene-Based Wearable Gas and Chemical Sensors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34544-34586. [PMID: 28876901 DOI: 10.1021/acsami.7b07063] [Citation(s) in RCA: 264] [Impact Index Per Article: 33.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Wearable electronics is expected to be one of the most active research areas in the next decade; therefore, nanomaterials possessing high carrier mobility, optical transparency, mechanical robustness and flexibility, lightweight, and environmental stability will be in immense demand. Graphene is one of the nanomaterials that fulfill all these requirements, along with other inherently unique properties and convenience to fabricate into different morphological nanostructures, from atomically thin single layers to nanoribbons. Graphene-based materials have also been investigated in sensor technologies, from chemical sensing to detection of cancer biomarkers. The progress of graphene-based flexible gas and chemical sensors in terms of material preparation, sensor fabrication, and their performance are reviewed here. The article provides a brief introduction to graphene-based materials and their potential applications in flexible and stretchable wearable electronic devices. The role of graphene in fabricating flexible gas sensors for the detection of various hazardous gases, including nitrogen dioxide (NO2), ammonia (NH3), hydrogen (H2), hydrogen sulfide (H2S), carbon dioxide (CO2), sulfur dioxide (SO2), and humidity in wearable technology, is discussed. In addition, applications of graphene-based materials are also summarized in detecting toxic heavy metal ions (Cd, Hg, Pb, Cr, Fe, Ni, Co, Cu, Ag), and volatile organic compounds (VOCs) including nitrobenzene, toluene, acetone, formaldehyde, amines, phenols, bisphenol A (BPA), explosives, chemical warfare agents, and environmental pollutants. The sensitivity, selectivity and strategies for excluding interferents are also discussed for graphene-based gas and chemical sensors. The challenges for developing future generation of flexible and stretchable sensors for wearable technology that would be usable for the Internet of Things (IoT) are also highlighted.
Collapse
Affiliation(s)
- Eric Singh
- Department of Computer Science, Stanford University , Stanford, California 94305, United States
| | - M Meyyappan
- Center for Nanotechnology, NASA Ames Research Center , Moffett Field, California 94035, United States
| | - Hari Singh Nalwa
- Advanced Technology Research , 26650 The Old Road, Valencia, California 91381, United States
| |
Collapse
|
35
|
Latychevskaia T, Wicki F, Escher C, Fink HW. Imaging the potential distribution of individual charged impurities on graphene by low-energy electron holography. Ultramicroscopy 2017; 182:276-282. [PMID: 28780143 DOI: 10.1016/j.ultramic.2017.07.019] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2017] [Revised: 07/26/2017] [Accepted: 07/28/2017] [Indexed: 10/19/2022]
Abstract
While imaging individual atoms can routinely be achieved in high resolution transmission electron microscopy, visualizing the potential distribution of individually charged adsorbates leading to a phase shift of the probing electron wave is still a challenging task. Low-energy electrons (30 - 250 eV) are sensitive to localized potential gradients. We employed low-energy electron holography to acquire in-line holograms of individual charged impurities on free-standing graphene. By applying an iterative phase retrieval reconstruction routine we recover the potential distribution of the localized charged impurities present on free-standing graphene.
Collapse
Affiliation(s)
- Tatiana Latychevskaia
- Physics Department, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland.
| | - Flavio Wicki
- Physics Department, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - Conrad Escher
- Physics Department, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - Hans-Werner Fink
- Physics Department, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| |
Collapse
|
36
|
Hinnemo M, Zhao J, Ahlberg P, Hägglund C, Djurberg V, Scheicher RH, Zhang SL, Zhang ZB. On Monolayer Formation of Pyrenebutyric Acid on Graphene. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2017; 33:3588-3593. [PMID: 28350965 DOI: 10.1021/acs.langmuir.6b04237] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
As a two-dimensional material with high charge carrier mobility, graphene may offer ultrahigh sensitivity in biosensing. To realize this, the first step is to functionalize the graphene. This is commonly done by using 1-pyrenebutyric acid (PBA) as a linker for biomolecules. However, the adsorption of PBA on graphene remains poorly understood despite reports of successful biosensors functionalized via this route. Here, the PBA adsorption on graphene is characterized through a combination of Raman spectroscopy, ab initio calculations, and spectroscopic ellipsometry. The PBA molecules are found to form a self-assembled monolayer on graphene, the formation of which is self-limiting and Langmuirian. Intriguingly, in concentrated solutions, the PBA molecules are found to stand up and stack horizontally with their edges contacting the graphene surface. This morphology could facilitate a surface densely populated with carboxylic functional groups. Spectroscopic analyses show that the monolayer saturates at 5.3 PBA molecules per nm2 and measures ∼0.7 nm in thickness. The morphology study of this PBA monolayer sheds light on the π-π stacking of small-molecule systems on graphene and provides an excellent base for optimizing functionalization procedures.
Collapse
Affiliation(s)
- Malkolm Hinnemo
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| | - Jie Zhao
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| | - Patrik Ahlberg
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| | - Carl Hägglund
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| | - Viktor Djurberg
- Division of Materials Theory, Department of Physics and Astronomy, Uppsala University , SE-751 20 Uppsala, Sweden
| | - Ralph H Scheicher
- Division of Materials Theory, Department of Physics and Astronomy, Uppsala University , SE-751 20 Uppsala, Sweden
| | - Shi-Li Zhang
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| | - Zhi-Bin Zhang
- Division of Solid State Electronics, Department of Engineering Sciences, Uppsala University , SE-751 21 Uppsala, Sweden
| |
Collapse
|
37
|
Mukherjee A, Reddy SK, Deka Boruah B, Misra A. Influence of charge traps in carbon nanodots on gas interaction. NANOTECHNOLOGY 2017; 28:135206. [PMID: 28186002 DOI: 10.1088/1361-6528/aa5fbc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The nonlinear electrical characteristic of carbon nanodots (CNDs) has revealed important physical phenomena of charge trapping playing a dominant role in surface interactions. Functional groups on the surface of CNDs attract ambient water molecules which in turn act as charge traps and give rise to electrical hysteresis that plays a dominant role in understanding charge transport in CNDs on surface interactions. Hysteresis in the current-voltage response is further utilized to study the interaction of the CNDs with nitrogen dioxide gas as an external stimuli. The hysteresis area is observed to be dependent on the time of gas interaction with the CNDs, therefore revealing the interaction mechanism of the CNDs with the gas.
Collapse
Affiliation(s)
- Anwesha Mukherjee
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, 560012 India
| | | | | | | |
Collapse
|
38
|
Mao S, Chang J, Pu H, Lu G, He Q, Zhang H, Chen J. Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing. Chem Soc Rev 2017; 46:6872-6904. [DOI: 10.1039/c6cs00827e] [Citation(s) in RCA: 235] [Impact Index Per Article: 29.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
This review highlights the recent progress in graphene-, 2D transition metal dichalcogenide-, and 2D black phosphorus-based FET sensors for detecting gases, biomolecules, and water contaminants.
Collapse
Affiliation(s)
- Shun Mao
- State Key Laboratory of Pollution Control and Resource Reuse
- College of Environmental Science and Engineering
- Tongji University
- Shanghai 200092
- China
| | - Jingbo Chang
- Department of Mechanical Engineering
- University of Wisconsin–Milwaukee
- Milwaukee
- USA
| | - Haihui Pu
- Department of Mechanical Engineering
- University of Wisconsin–Milwaukee
- Milwaukee
- USA
| | | | - Qiyuan He
- Center for Programmable Materials
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Hua Zhang
- Center for Programmable Materials
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Junhong Chen
- Department of Mechanical Engineering
- University of Wisconsin–Milwaukee
- Milwaukee
- USA
| |
Collapse
|
39
|
Cheng Z, Goda K. Design of waveguide-integrated graphene devices for photonic gas sensing. NANOTECHNOLOGY 2016; 27:505206. [PMID: 27855120 DOI: 10.1088/0957-4484/27/50/505206] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present waveguide-integrated graphene devices for photonic gas sensing. In a gas environment, graphene's conductivity is changed by adsorbed gas molecules which serve as charge-carrier donors or acceptors. To accurately probe gas-induced variations in the graphene's conductivity, we optimize the graphene's Fermi level and spectral region. Then, we propose graphene-on-silicon and graphene-on-germanium suspended membrane slot waveguides in which propagating light in the waveguide has a strong interaction with the top graphene layer. The gas concentration can be calculated by measuring the spectrum of the optical reflection from the waveguide Bragg grating. The maximum sensitivity of the waveguide-integrated gas sensor can reach one part per million for sensing gaseous nitrogen dioxide. Its sensitivity is about 20 times higher than that of the graphene-covered microfiber sensor and is comparable with that of a graphene plasmonic sensor. The fabrication of the proposed graphene device is CMOS compatible. Our results pave a way for chip-integrated sensitive photonic gas sensors.
Collapse
Affiliation(s)
- Zhenzhou Cheng
- Department of Chemistry, University of Tokyo, Tokyo 113-0033, Japan
| | | |
Collapse
|