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Nguyen H, Nguyen T, Nguyen DV, Phan HP, Nguyen TK, Dao DV, Nguyen NT, Bell J, Dinh T. Enhanced Photovoltaic Effect in n-3C-SiC/ p-Si Heterostructure Using a Temperature Gradient for Microsensors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38930-38937. [PMID: 37531165 DOI: 10.1021/acsami.3c06699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
The development of fifth-generation (5G) communications and the Internet of Things (IoT) has created a need for high-performance sensing networks and sensors. Improving the sensitivity and reducing the energy consumption of these sensors can improve the performance of the sensing network and conserve energy. This paper reports a large enhancement of the photovoltaic effect in a 3C-SiC/Si heterostructure and the tunability of the photovoltage under the impact of a temperature gradient, which has the potential to increase the sensitivity and reduce the energy consumption of microsensors. To start with, cubic silicon carbide (3C-SiC) was grown on a silicon wafer, and a micro-3C-SiC/Si heterostructure device was then fabricated using standard photolithography. The result revealed that the sensor could either capture light energy, transform it into electrical energy for self-power purposes, or detect light with intensities of 1.6 and 4 mW/cm2. Under the impact of the temperature gradient induced by conduction heat transfer from a heater, the measured photovoltage was improved. This thermo-phototronic coupling enhanced the photovoltage up to 51% at a temperature gradient of 8.73 K and light intensity of 4 mW/cm2. Additionally, the enhancement can be tuned by controlling the direction of the temperature gradient and the temperature difference. These findings indicate the promise of the temperature gradient in SiC/Si heterostructures for developing high-performance temperature sensors and self-powered photodetectors.
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Affiliation(s)
- Hung Nguyen
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
| | - Thanh Nguyen
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
| | - Duy Van Nguyen
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
| | - Hoang-Phuong Phan
- School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Tuan Khoa Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - John Bell
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
| | - Toan Dinh
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
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Nguyen T, Dinh T, Bell J, Dau VT, Nguyen NT, Dao DV. Light-Harvesting Self-Powered Monolithic-Structure Temperature Sensing Based on 3C-SiC/Si Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:22593-22600. [PMID: 35523205 DOI: 10.1021/acsami.2c01681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Utilizing harvesting energy to power sensors has been becoming more critical in the current age of the Internet of Things. In this paper, we propose a novel technology using a monolithic 3C-SiC/Si heterostructure to harvest photon energy to power itself and simultaneously sense the surrounding temperature. The 3C-SiC/Si heterostructure converts photon energy into electrical energy, which is manifested as a lateral photovoltage across the top material layer of the heterostructure. Simultaneously, the lateral photovoltage varies with the surrounding temperature, and this photovoltage variation with temperature is used to monitor the temperature. We characterized the thermoresistive properties of the 3C-SiC/Si heterostructure, evaluated its energy conversion, and investigated its performance as a light-harvesting self-powered temperature sensor. The resistance of the heterostructure gradually drops with increasing temperature with a temperature coefficient of resistance (TCR) ranging from more than -3500 to approximately -8200 ppm/K. The generated lateral photovoltage is as high as 58.8 mV under 12 700 lx light illumination at 25 °C. The sensitivity of the sensor in the self-power mode is as high as 360 μV·K-1 and 330 μV·K-1 under illumination of 12 700 lx and 7400 lx lights, respectively. The sensor harvests photon energy to power itself and measure temperatures as high as 300 °C, which is impressive for semiconductor-based sensor. The proposed technology opens new avenues for energy harvesting self-powered temperature sensors.
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Affiliation(s)
- Thanh Nguyen
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - Toan Dinh
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - John Bell
- School of Engineering, University of Southern Queensland, Toowoomba, Queensland 4350, Australia
| | - Van Thanh Dau
- School of Engineering and Built Environment, Griffith University, Southport, Queensland 4215, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
- School of Engineering and Built Environment, Griffith University, Southport, Queensland 4215, Australia
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Nguyen T, Dinh T, Dau VT, Md Foisal AR, Guzman P, Nguyen H, Pham TA, Nguyen TK, Phan HP, Nguyen NT, Dao DV. Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:35046-35053. [PMID: 34236166 DOI: 10.1021/acsami.1c05985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.
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Affiliation(s)
- Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, QLD 4350, Australia
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Toowoomba, QLD 4350, Australia
| | - Toan Dinh
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- Centre for Future Materials, University of Southern Queensland, Toowoomba, QLD 4350, Australia
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Toowoomba, QLD 4350, Australia
| | - Van Thanh Dau
- School of Engineering and Built Environment, Griffith University, Southport, QLD 4215, Australia
| | - Abu Riduan Md Foisal
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Pablo Guzman
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Hung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Tuan Anh Pham
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Tuan-Khoa Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Hoang-Phuong Phan
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
- School of Engineering and Built Environment, Griffith University, Southport, QLD 4215, Australia
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Wang Y, Wu P, Wang Z, Luo M, Zhong F, Ge X, Zhang K, Peng M, Ye Y, Li Q, Ge H, Ye J, He T, Chen Y, Xu T, Yu C, Wang Y, Hu Z, Zhou X, Shan C, Long M, Wang P, Zhou P, Hu W. Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2005037. [PMID: 32985021 DOI: 10.1002/adma.202005037] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Revised: 08/10/2020] [Indexed: 06/11/2023]
Abstract
Low-symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low-symmetry narrow-bandgap 2D materials will be rewarding for the development of nanoelectronics and nano-optoelectronics. Herein, sulfide niobium (NbS3 ), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS3 with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS3 Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10-25 A2 Hz-1 ), photoelectrical dichroic ratio (1.84) and high-quality reflective polarization imaging (637 nm and 830 nm). A room-temperature specific detectivity exceeding 107 Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low-symmetry narrow-bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid-infrared optoelectronic applications.
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Affiliation(s)
- Yang Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Man Luo
- Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong, Jiangsu, 226019, China
| | - Fang Zhong
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xun Ge
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Kun Zhang
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meng Peng
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Qing Li
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Haonan Ge
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting He
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunfeng Chen
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong, Jiangsu, 226019, China
| | - Chenhui Yu
- Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong, Jiangsu, 226019, China
| | - Yueming Wang
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Xiaohao Zhou
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Mingsheng Long
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Peng Wang
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- Key Laboratory of Space Active Opto-Electronics Technology and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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Dinh T, Nguyen T, Phan HP, Nguyen NT, Dao DV, Bell J. Stretchable respiration sensors: Advanced designs and multifunctional platforms for wearable physiological monitoring. Biosens Bioelectron 2020; 166:112460. [PMID: 32862846 DOI: 10.1016/j.bios.2020.112460] [Citation(s) in RCA: 53] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2020] [Revised: 07/14/2020] [Accepted: 07/15/2020] [Indexed: 12/21/2022]
Abstract
Respiration signals are a vital sign of life. Monitoring human breath provides critical information for health assessment, diagnosis, and treatment for respiratory diseases such as asthma, chronic bronchitis, and emphysema. Stretchable and wearable respiration sensors have recently attracted considerable interest toward monitoring physiological signals in the era of real time and portable healthcare systems. This review provides a snapshot on the recent development of stretchable sensors and wearable technologies for respiration monitoring. The article offers the fundamental guideline on the sensing mechanisms and design concepts of stretchable sensors for detecting vital breath signals such as temperature, humidity, airflow, stress and strain. A highlight on the recent progress in the integration of variable sensing components outlines feasible pathways towards multifunctional and multimodal sensor platforms. Structural designs of nanomaterials and platforms for stretchable respiration sensors are reviewed.
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Affiliation(s)
- Toan Dinh
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Queensland, 4350, Australia.
| | - Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Hoang-Phuong Phan
- Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - John Bell
- School of Mechanical and Electrical Engineering, University of Southern Queensland, Queensland, 4350, Australia
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