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Ma Z, Yi H, Zheng Z, Chen Z, Liu W, Chen Y, Cheng B, Cai C, Pan S, Ge J. Versatile and Robust Reservoir Computing with PWM-Driven Heterogenous R-C Circuits. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025:e16413. [PMID: 40364715 DOI: 10.1002/advs.202416413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2024] [Revised: 05/01/2025] [Indexed: 05/15/2025]
Abstract
Physical reservoir computing (PRC) holds great promise for low-latency, energy-efficient information processing, yet current implementations often suffer from limited flexibility, adaptability, and environmental stability. Here, a PRC system based on pulse-width modulation (PWM)-encoded resistor-capacitor (R-C) circuits is introduced, achieving exceptional versatility and robustness. By leveraging customizable nonlinearities and dynamic timescales, this system achieves state-of-the-art performance across diverse tasks, including chaotic time-series forecasting (NRMSE = 0.015 for Mackey-Glass) and complex multiscale tasks (94% accuracy for multiclass heartbeat classification). Notably, the design reduces relative errors by 98.4% across different device batches and under temperature variations compared to memristor-based reservoirs. These features position the approach as a scalable, adaptive, and energy-efficient solution for edge computing in dynamic environments, paving the way for robust and practical analog computing systems.
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Affiliation(s)
- Zelin Ma
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou, 510555, China
- Microelectronics Thrust, The Hong Kong University of Science and Technology (Guangzhou), No. 1 Duxue Road, Nansha District, Guangzhou, 511466, China
| | - Huasen Yi
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Ziping Zheng
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Zhanyi Chen
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Weicheng Liu
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Yibing Chen
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Bojun Cheng
- Microelectronics Thrust, The Hong Kong University of Science and Technology (Guangzhou), No. 1 Duxue Road, Nansha District, Guangzhou, 511466, China
| | - Chang Cai
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Shusheng Pan
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou, 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design Department of Education of Guangdong Province, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
| | - Jun Ge
- School of Physics and Material Science, Guangzhou University, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou, 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design Department of Education of Guangdong Province, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou, 510006, China
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2
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Lu YD, Hsu CR, Ke SH, Lai KL, Cheng HL, Wang YW, Chen JY. Solution-processable and photo-programmable logic gate realized by organic non-volatile floating-gate photomemory. MATERIALS HORIZONS 2025. [PMID: 40183739 DOI: 10.1039/d5mh00036j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2025]
Abstract
Programmable inverters using non-volatile floating-gate photomemories as basic building blocks instead of field-effect transistors enable the manipulation of threshold voltage by photons, providing an additional degree of freedom for applications in integrated circuits. However, the development of organic photo-controllable inverters is challenging due to issues such as solubility constraints for film stacking and the immaturity of photo-recordable devices. Notably, the development of organic non-volatile floating-gate photomemories (ONVFGPs) with n-type charge-transporting layers still lags behind that of the p-type layers due to the limited availability of suitable solution-processable charge-trapping materials and charge-transporting material pairs. Herein, photo-crosslinkable polystyrene-b-poly(methacrylic acid) (PS-b-PMAA)/5,10,15,20-tetraphenyl-21H,23H-porphine zinc (ZnTPP), which follows anti-Kasha's rule, is adopted as the charge-trapping layer for ONVFGPs. Both the second and first excited states of ZnTPP participate in photo-induced charge transfer, achieving the state-of-the-art photo-programming time of 0.1 second for ONVFGPs. The transfer curve of the derived photo-programmable inverter can be fine-tuned across a broad spectrum spanning from 405 nm to 830 nm, leading to at least six output states for the same input signal. This research confirms the possibility of integrated organic optoelectronics, opening avenues for solution-processable system-on-chip, neuromorphic computing and organic photonic integrated circuits.
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Affiliation(s)
- Yu-Dao Lu
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
| | - Chan-Rung Hsu
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
| | - Shin-Hau Ke
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
| | - Kuan-Lin Lai
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
| | - Horng-Long Cheng
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
- Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University, Tainan 70101, Taiwan
- Meta-nano Photonics Center National Cheng Kung University, Tainan 70101, Taiwan
| | - Yu-Wu Wang
- Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan
| | - Jung-Yao Chen
- Department of Photonics National Cheng Kung University, Tainan 70101, Taiwan.
- Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University, Tainan 70101, Taiwan
- Meta-nano Photonics Center National Cheng Kung University, Tainan 70101, Taiwan
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3
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Komatsu H, Hosoda N, Ikuno T. Self-Powered Dye-Sensitized Solar-Cell-Based Synaptic Devices for Multi-Scale Time-Series Data Processing in Physical Reservoir Computing. ACS APPLIED MATERIALS & INTERFACES 2025; 17:5056-5065. [PMID: 39466668 PMCID: PMC11758776 DOI: 10.1021/acsami.4c11061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2024] [Revised: 10/11/2024] [Accepted: 10/18/2024] [Indexed: 10/30/2024]
Abstract
Physical reservoir computing (PRC) using synaptic devices has attracted attention as a promising edge artificial intelligence device. To handle time-series data on various time scales, it is necessary to fabricate devices with the desired time scale. In this study, we fabricated a dye-sensitized solar-cell-based synaptic device with controllable time constants by changing the light intensity. This device showed synaptic features, such as paired-pulse facilitation and paired-pulse depression, in response to light intensity. Moreover, we found that the high computational performance of the time-series data processing task was achieved by changing the light intensity, even when the input pulse width was varied. In addition, the fabricated device can be used for motion recognition tasks. This study paves the way for realizing multiple time-scale PRC.
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Affiliation(s)
- Hiroaki Komatsu
- Department of Applied Electronics,
Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Norika Hosoda
- Department of Applied Electronics,
Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Ikuno
- Department of Applied Electronics,
Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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4
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Liu R, He Y, Zhu X, Duan J, Liu C, Xie Z, McCulloch I, Yue W. Hardware-Feasible and Efficient N-Type Organic Neuromorphic Signal Recognition via Reservoir Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2409258. [PMID: 39578330 DOI: 10.1002/adma.202409258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Revised: 11/08/2024] [Indexed: 11/24/2024]
Abstract
Organic electrochemical synaptic transistors (OESTs), inspired by the biological nervous system, have garnered increasing attention due to their multifunctional applications in neuromorphic computing. However, the practical implementation of OESTs for signal recognition-particularly those utilizing n-type organic mixed ionic-electronic conductors (OMIECs)-still faces significant challenges at the hardware level. Here, a state-of-the-art small-molecule n-type OEST integrated within a physically simple and hardware feasible reservoir-computing (RC) framework for practical temporal signal recognition is presented. This integration is achieved by leveraging the adjustable synaptic properties of the n-OEST, which exhibits tunable nonlinear short-term memory, transitioning from volatility to nonvolatility, and demonstrating adaptive temporal specificity. Additionally, the nonvolatile OEST offers 256 conductance levels and a wide dynamic range (≈147) in long-term potentiation/depression (LTP/LTD), surpassing previously reported n-OESTs. By combining volatile n-OESTs as reservoirs with a single-layer perceptron readout composed of nonvolatile n-OEST networks, this physical RC system achieves substantial recognition accuracy for both handwritten-digit images (94.9%) and spoken digit (90.7%), along with ultrahigh weight efficiency. Furthermore, this system demonstrates outstanding accuracy (98.0%) by grouped RC in practical sleep monitoring, specifically in snoring recognition. Here, a reliable pathway for OMIEC-driven computing is presented to advance bioinspired hardware-based neuromorphic computing in the physical world.
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Affiliation(s)
- Riping Liu
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Yifei He
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Xiuyuan Zhu
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jiayao Duan
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Zhuang Xie
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Iain McCulloch
- Andlinger Center for Energy and the Environment, Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Wan Yue
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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5
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Namiki W, Nishioka D, Nomura Y, Tsuchiya T, Yamamoto K, Terabe K. Iono-Magnonic Reservoir Computing With Chaotic Spin Wave Interference Manipulated by Ion-Gating. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2411777. [PMID: 39552197 PMCID: PMC11744637 DOI: 10.1002/advs.202411777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2024] [Indexed: 11/19/2024]
Abstract
Physical reservoirs are a promising approach for realizing high-performance artificial intelligence devices utilizing physical devices. Although nonlinear interfered spin-wave multi-detection exhibits high nonlinearity and the ability to map in high dimensional feature space, it does not have sufficient performance to process time-series data precisely. Herein, development of an iono-magnonic reservoir by combining such interfered spin wave multi-detection and ion-gating involving protonation-induced redox reaction triggered by the application of voltage is reported. This study is the first to report the manipulation of the propagating spin wave property by ion-gating and the application of the same to physical reservoir computing. The subject iono-magnonic reservoir can generate various reservoir states in a single homogenous medium by utilizing a spin wave property modulated by ion-gating. Utilizing the strong nonlinearity resulting from chaos, the reservoir shows good computational performance in completing the Mackey-Glass chaotic time-series prediction task, and the performance is comparable to that exhibited by simulated neural networks.
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Affiliation(s)
- Wataru Namiki
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1‐1 NamikiTsukubaIbaraki305‐0044Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1‐1 NamikiTsukubaIbaraki305‐0044Japan
- Faculty of ScienceTokyo University of Science6‐3‐1 NiijukuKatsushikaTokyo125‐8585Japan
| | - Yuki Nomura
- Nanostructures Research LaboratoryJapan Fine Ceramics Center2‐4‐1 Mutsuno, AtsutaNagoyaAichi456‐8587Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1‐1 NamikiTsukubaIbaraki305‐0044Japan
| | - Kazuo Yamamoto
- Nanostructures Research LaboratoryJapan Fine Ceramics Center2‐4‐1 Mutsuno, AtsutaNagoyaAichi456‐8587Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1‐1 NamikiTsukubaIbaraki305‐0044Japan
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6
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Jo H, Jang J, Park HJ, Lee H, An SJ, Hong JP, Jeong MS, Oh H. Physical Reservoir Computing Using Tellurium-Based Gate-Tunable Artificial Photonic Synapses. ACS NANO 2024; 18:30761-30773. [PMID: 39446072 DOI: 10.1021/acsnano.4c10489] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2024]
Abstract
We report tellurium (Te) thin-film-based artificial photonic synapses and their application to physical reservoir computing (PRC). The Te-based artificial photonic synapses were fabricated by using sputtered Te thin films and spray-coated MXene (Ti3C2) electrodes. A thorough investigation of the field-dependent persistent photoconductivity (PPC) of the Te channel revealed that the relaxation speed of the transient photocurrent depended on the gate bias. Utilizing the PPC property, the Te device served as an excellent photonic synapse under light pulse stimulus, exhibiting multiple synaptic characteristics such as excitatory postsynaptic current and paired-pulse facilitation, as well as highly linear potentiation-depression characteristics; a simulation-based study further confirmed the effectiveness of the device. Most importantly, by exploiting the nonlinear and fading memory characteristics of the Te photonic synapse, we demonstrate two advanced examples of PRC. In classifying handwritten digits, our system carried out successful digit recognition without binarization or another simplification process with reduced computational cost compared to conventional systems. To solve second-order nonlinear equations, we introduce the strategy of utilizing historical nodes. The combination of historical nodes and the gate-tunable responses of the photonic synapses, which provide an enriched reservoir state, yielded excellent prediction accuracy. Overall, this work will offer an understanding of Te-based optoelectronic devices and their synergetic integration with neuromorphic devices and PRC.
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Affiliation(s)
- Hyerin Jo
- Department of Physics and Integrative Institute of Basic Sciences, Soongsil University, Seoul 06978, Republic of Korea
| | - Jiseong Jang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyeon Jung Park
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Huigu Lee
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Sung Jin An
- Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
| | - Jin Pyo Hong
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Hongseok Oh
- Department of Physics and Integrative Institute of Basic Sciences, Soongsil University, Seoul 06978, Republic of Korea
- Department of Intelligent Semiconductors, Soongsil University, Seoul 06978, Republic of Korea
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7
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Leng Y, Lv Z, Huang S, Xie P, Li H, Zhu S, Sun T, Zhou Y, Zhai Y, Li Q, Ding G, Zhou Y, Han S. A Near-Infrared Retinomorphic Device with High Dimensionality Reservoir Expression. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2411225. [PMID: 39390822 PMCID: PMC11602693 DOI: 10.1002/adma.202411225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Revised: 09/24/2024] [Indexed: 10/12/2024]
Abstract
Physical reservoir-based reservoir computing (RC) systems for intelligent perception have recently gained attention because they require fewer computing resources. However, the system remains limited in infrared (IR) machine vision, including materials and physical reservoir expression power. Inspired by biological visual perception systems, the study proposes a near-infrared (NIR) retinomorphic device that simultaneously perceives and encodes narrow IR spectral information (at ≈980 nm). The proposed device, featuring core-shell upconversion nanoparticle/poly (3-hexylthiophene) (P3HT) nanocomposite channels, enables the absorption and conversion of NIR into high-energy photons to excite more photo carriers in P3HT. The photon-electron-coupled dynamics under the synergy of photovoltaic and photogating effects influence the nonlinearity and high dimensionality of the RC system under narrow-band NIR irradiation. The device also exhibits multilevel data storage capability (≥8 levels), excellent stability (≥2000 s), and durability (≥100 cycles). The system accurately identifies NIR static and dynamic handwritten digit images, achieving recognition accuracies of 91.13% and 90.07%, respectively. Thus, the device tackles intricate computations like solving second-order nonlinear dynamic equations with minimal errors (normalized mean squared error of 1.06 × 10⁻3 during prediction).
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Affiliation(s)
- Yan‐Bing Leng
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
| | - Ziyu Lv
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Shengming Huang
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Peng Xie
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Hua‐Xin Li
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Shirui Zhu
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
| | - Tao Sun
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - You Zhou
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Qingxiu Li
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Guanglong Ding
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Su‐Ting Han
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
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8
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Wan X, Yan J, Wang R, Chen K, Ji T, Chen X, Chen L, Zhu L, Khim D, Yu Z, Sun L, Sun H, Tan CL, Xu Y. Organic Polymer-Based Photodiodes for Optoelectronic Reservoir Computing with Time-Based Coding. J Phys Chem Lett 2024; 15:10162-10168. [PMID: 39348671 DOI: 10.1021/acs.jpclett.4c02571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/02/2024]
Abstract
The integration of optoelectronic devices with reservoir computing offers a novel and effective approach to in-sensor computing. This work presents a hybrid digital-physical solution that leverages the high-performance poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)-3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) organic polymer-based photodiodes for the hardware implementation of reservoir computing system. The photodiodes demonstrate nonlinear photoelectric responses, fading memory, and cyclical stability, in relation to the temporal information on light stimuli. These attributes enable effective mapping, historical context sensitivity, and consistent performance, with time-encoded inputs, which are particularly essential for accurate and continuous processing of time series data. The optoelectronic reservoir computing system with pulse width modulation (PWM) coding demonstrates impressive performance in the prediction of chaotic sequences, achieving a normalized root-mean-square error as low as 0.095 with optimized parameters. The DPPT-TT-based photodiodes and time-based coding offer a hardware-efficient solution for reservoir computing, significantly advancing Internet of Things applications.
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Affiliation(s)
- Xiang Wan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jie Yan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Runfeng Wang
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Kunfang Chen
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Tingting Ji
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xin Chen
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Lijian Chen
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Zhu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Dongyoon Khim
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Liuyang Sun
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
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9
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Lewerenz M, Passerini E, Cheng B, Fischer M, Emboras A, Luisier M, Koch U, Leuthold J. Versatile Nanoscale Three-Terminal Memristive Switch Enabled by Gating. ACS NANO 2024; 18:10798-10806. [PMID: 38593383 PMCID: PMC11044582 DOI: 10.1021/acsnano.3c11373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 02/23/2024] [Accepted: 02/26/2024] [Indexed: 04/11/2024]
Abstract
A three-terminal memristor with an ultrasmall footprint of only 0.07 μm2 and critical dimensions of 70 nm × 10 nm × 6 nm is introduced. The device's feature is the presence of a gate contact, which enables two operation modes: either tuning the set voltage or directly inducing a resistance change. In I-V mode, we demonstrate that by changing the gate voltages between ±1 V one can shift the set voltage by 69%. In pulsing mode, we show that resistance change can be triggered by a gate pulse. Furthermore, we tested the device endurance under a 1 kHz operation. In an experiment with 2.6 million voltage pulses, we found two distinct resistance states. The device response to a pseudorandom bit sequence displays an open eye diagram and a success ratio of 97%. Our results suggest that this device concept is a promising candidate for a variety of applications ranging from Internet-of-Things to neuromorphic computing.
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Affiliation(s)
- Mila Lewerenz
- TH
Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland
| | - Elias Passerini
- TH
Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland
| | - Bojun Cheng
- The
Hong Kong University of Science and Technology, Thrust of Microelectronics, Guangzhou 529200, China
| | - Markus Fischer
- TH
Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland
| | - Alexandros Emboras
- ETH
Zurich, Integrated Systems Laboratory (IIS), 8092 Zürich, Switzerland
| | - Mathieu Luisier
- ETH
Zurich, Integrated Systems Laboratory (IIS), 8092 Zürich, Switzerland
| | - Ueli Koch
- TH
Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland
| | - Juerg Leuthold
- TH
Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland
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10
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Namiki W, Nishioka D, Tsuchiya T, Higuchi T, Terabe K. Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism. NANO LETTERS 2024; 24:4383-4392. [PMID: 38513213 DOI: 10.1021/acs.nanolett.3c05029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Physical reservoir computing is a promising way to develop efficient artificial intelligence using physical devices exhibiting nonlinear dynamics. Although magnetic materials have advantages in miniaturization, the need for a magnetic field and large electric current results in high electric power consumption and a complex device structure. To resolve these issues, we propose a redox-based physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance, which are phenomena described by different nonlinear functions of the magnetization vector that do not need a magnetic field to be applied. The expressive power of this reservoir based on a compact all-solid-state redox transistor is higher than the previous physical reservoir. The normalized mean square error of the reservoir on a second-order nonlinear equation task was 1.69 × 10-3, which is lower than that of a memristor array (3.13 × 10-3) even though the number of reservoir nodes was fewer than half that of the memristor array.
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Affiliation(s)
- Wataru Namiki
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nishioka D, Shingaya Y, Tsuchiya T, Higuchi T, Terabe K. Few- and single-molecule reservoir computing experimentally demonstrated with surface-enhanced Raman scattering and ion gating. SCIENCE ADVANCES 2024; 10:eadk6438. [PMID: 38416821 PMCID: PMC10901377 DOI: 10.1126/sciadv.adk6438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 01/23/2024] [Indexed: 03/01/2024]
Abstract
Molecule-based reservoir computing (RC) is promising for achieving low power consumption neuromorphic computing, although the information-processing capability of small numbers of molecules is not clear. Here, we report a few- and single-molecule RC that uses the molecular vibration dynamics in the para-mercaptobenzoic acid (pMBA) detected by surface-enhanced Raman scattering (SERS) with tungsten oxide nanorod/silver nanoparticles. The Raman signals of the pMBA molecules, adsorbed at the SERS active site of the nanorod, were reversibly perturbated by the application of voltage-induced local pH changes near the molecules, and then used to perform time-series analysis tasks. Despite the small number of molecules used, our system achieved good performance, including >95% accuracy in various nonlinear waveform transformations, 94.3% accuracy in solving a second-order nonlinear dynamic system, and a prediction error of 25.0 milligrams per deciliter in a 15-minute-ahead blood glucose level prediction. Our work provides a concept of few-molecular computing with practical computation capabilities.
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Affiliation(s)
- Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Yoshitaka Shingaya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Shibata K, Nishioka D, Namiki W, Tsuchiya T, Higuchi T, Terabe K. Redox-based ion-gating reservoir consisting of (104) oriented LiCoO 2 film, assisted by physical masking. Sci Rep 2023; 13:21060. [PMID: 38030675 PMCID: PMC10687094 DOI: 10.1038/s41598-023-48135-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 11/21/2023] [Indexed: 12/01/2023] Open
Abstract
Reservoir computing (RC) is a machine learning framework suitable for processing time series data, and is a computationally inexpensive and fast learning model. A physical reservoir is a hardware implementation of RC using a physical system, which is expected to become the social infrastructure of a data society that needs to process vast amounts of information. Ion-gating reservoirs (IGR) are compact and suitable for integration with various physical reservoirs, but the prediction accuracy and operating speed of redox-IGRs using WO3 as the channel are not sufficient due to irreversible Li+ trapping in the WO3 matrix during operation. Here, in order to enhance the computation performance of redox-IGRs, we developed a redox-based IGR using a (104) oriented LiCoO2 thin film with high electronic and ionic conductivity as a trap-free channel material. The subject IGR utilizes resistance change that is due to a redox reaction (LiCoO2 ⟺ Li1-xCoO2 + xLi+ + xe-) with the insertion and desertion of Li+. The prediction error in the subject IGR was reduced by 72% and the operation speed was increased by 4 times compared to the previously reported WO3, which changes are due to the nonlinear and reversible electrical response of LiCoO2 and the high dimensionality enhanced by a newly developed physical masking technique. This study has demonstrated the possibility of developing high-performance IGRs by utilizing materials with stronger nonlinearity and by increasing output dimensionality.
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Affiliation(s)
- Kaoru Shibata
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Wataru Namiki
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan.
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
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Liu Z, Zhang Q, Xie D, Zhang M, Li X, Zhong H, Li G, He M, Shang D, Wang C, Gu L, Yang G, Jin K, Ge C. Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nat Commun 2023; 14:7176. [PMID: 37935751 PMCID: PMC10630289 DOI: 10.1038/s41467-023-42993-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.
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Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Yangtze River Delta Physics Research Center Co. Ltd., 213300, Liyang, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Mingzhen Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physics and Optoelectronics Engineering, Ludong University, 264025, Yantai, Shandong, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dashan Shang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
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