All-in-one, all-optical logic gates using liquid metal plasmon nonlinearity

Electronic processors are reaching the physical speed ceiling that heralds the era of optical processors. Multifunctional all-optical logic gates (AOLGs) of massively parallel processing are of great importance for large-scale integrated optical processors with speed far in excess of electronics, while are rather challenging due to limited operation bandwidth and multifunctional integration complexity. Here we for the first time experimentally demonstrate a reconfigurable all-in-one broadband AOLG that achieves nine fundamental Boolean logics in a single configuration, enabled by ultrabroadband (400-4000 nm) plasmon-enhanced thermo-optical nonlinearity (TONL) of liquid-metal Galinstan nanodroplet assemblies (GNAs). Due to the unique heterogeneity (broad-range geometry sizes, morphology, assembly profiles), the prepared GNAs exhibit broadband plasmonic opto-thermal effects (hybridization, local heating, energy transfer, etc.), resulting in a huge nonlinear refractive index under the order of 10-4-10-5 within visual-infrared range. Furthermore, a generalized control-signal light route is proposed for the dynamic TONL modulation of reversible spatial-phase shift, based on which nine logic functions are reconfigurable in one single AOLG configuration. Our work will provide a powerful strategy on large-bandwidth all-optical circuits for high-density data processing in the future.

Ultra-compact optical full-adder based on directed logic and microring resonators

Photonic integrated circuits with compact design have opened possibilities for the development of optical computing systems; however, the overuse of photonic components in optical designs has slowed the progress of dense integration. In this paper, we propose an ultra-compact optical full-adder based on directed logic and microring resonators. To the best of our knowledge, the proposed structure requires fewer optical components than any other current designs, resulting in a significantly reduced footprint 59.2µm×29.2µm. Also, the proposed structure exhibits a maximum delay time of approximately 10 ps, implying a minimum date rate of 100 GHz. Simulation results by finite-difference time-domain (FDTD) demonstrate the effectiveness and feasibility of the proposed optical full-adder.

Chirality logic gates

The ever-growing demand for faster and more efficient data transfer and processing has brought optical computation strategies to the forefront of research in next-generation computing. Here, we report a universal computing approach with the chirality degree of freedom. By exploiting the crystal symmetry-enabled well-known chiral selection rules, we demonstrate the viability of the concept in bulk silica crystals and atomically thin semiconductors and create ultrafast (<100-fs) all-optical chirality logic gates (XNOR, NOR, AND, XOR, OR, and NAND) and a half adder. We also validate the unique advantages of chirality gates by realizing multiple gates with simultaneous operation in a single device and electrical control. Our first demonstrations of logic gates using chiral selection rules suggest that optical chirality could provide a powerful degree of freedom for future optical computing.

Design of an all-optical multi-logic operation-integrated metamaterial-based terahertz logic gate

Terahertz logic gates play a vital role in optical signal processing and terahertz digitization. Herein, a strategy to design an all-optical terahertz logic gate device composed of metamaterials with a semiconductor-metal hybrid is proposed; accordingly, a concrete logic gate composed of Ge embedded-in Au stripe supported by a Si board is presented theoretically. Simulation results reveal the dependence of the terahertz transmission spectra on the different illuminations in the device. Based on the illumination-transmission response, the designed device can realize the NOR or OR Boolean operation. The effects of the width of the Ge-Au stripe as well as the Si board on the transmission spectra and logic performance were also investigated.

Enhanced Spectral Broadening of Femtosecond Optical Pulses in Silicon Nanowires Integrated with 2D Graphene Oxide Films

We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses after propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI nanowires with precise control of the film thickness. Detailed SPM measurements using femtosecond optical pulses are carried out, achieving a broadening factor of up to ~4.3 for a device with 0.4-mm-long, 2 layers of GO. By fitting the experimental results with the theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of ~3.5 and in the effective nonlinear figure of merit (FOM) by a factor of ~3.8, relative to the uncoated waveguide. Finally, we discuss the influence of GO film length on the spectral broadening and compare the nonlinear optical performance of different integrated waveguides coated with GO films. These results confirm the improved nonlinear optical performance of silicon devices integrated with 2D GO films.

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Interconnect-Free Multibit Arithmetic and Logic Unit in a Single Reconfigurable 3 μm2 Plasmonic Cavity

Processing information with conventional integrated circuits remains beset by the interconnect bottleneck: circuits made of smaller active devices need longer and narrower interconnects, which have become the prime source of power dissipation and clock rate saturation. Optical interchip communication provides a fast and energy-saving option that still misses a generic on-chip optical information processing by interconnect-free and reconfigurable Boolean arithmetic logic units (ALU). Considering metal plasmons as a platform with dual optical and electronic compatibilities, we forge interconnect-free, ultracompact plasmonic Boolean logic gates and reconfigure them, at will, into computing ALU without any redesign nor cascaded circuitry. We tailor the plasmon mode landscape of a single 2.6 μm² planar gold cavity and demonstrate the operation and facile reconfiguration of all 2-input logic gates. The potential for higher complexity of the same logic unit is shown by a multi-input excitation and a phase control to realize an arithmetic 2-bit adder.

Tuning band structures of photonic multilayers with positive and negative refractive index materials according to generalized Fibonacci and Thue-Morse sequences

We investigate the photonic band structure, using the transfer-matrix method, in one-dimensional structures composed of a dispersive metamaterial A juxtaposed with a non-dispersive dielectric B according to the generalized Fibonacci and Thue-Morse sequences, which are ruled and characterized by two positive integer numbers, p  and q. We present the band structures of different generations of these sequences for both TE and TM modes and discuss how they are affected by the p  and q parameters and the ratio between the thicknesses of the building blocks. We obtain a new and very important analytical expression for the frequency in which the average refraction index vanishes, i.e. when the [Formula: see text] gap condition is satisfied, and we investigate, in detail, the behavior of this emergent scale insensitive gap, as a function of the thicknesses ratio, for all structures considered. For the metamaterial considered, we show that the reduced frequency for [Formula: see text] converges faster or slower to 0.41 depending on the sequence. By adjusting the p  and q parameters, we can obtain a higher concentration of the pass bands inside (outside) the n _A   <  0 region when there are more (less) blocks A than B in the unit cell. Our results also show the presence of omnidirectional and complete band gaps, which have various practical and technological applications.

On-chip silicon photonic signaling and processing: a review

The arrival of the big data era has driven the rapid development of high-speed optical signaling and processing, ranging from long-haul optical communication links to short-reach data centers and high-performance computing, and even micro-/nano-scale inter-chip and intra-chip optical interconnects. On-chip photonic signaling is essential for optical data transmission, especially for chip-scale optical interconnects, while on-chip photonic processing is a critical technology for optical data manipulation or processing, especially at the network nodes to facilitate ultracompact data management with low power consumption. In this paper, we review recent research progress in on-chip photonic signaling and processing on silicon photonics platforms. Firstly, basic key devices (lasers, modulators, detectors) are introduced. Secondly, for on-chip photonic signaling, we present recent works on on-chip data transmission of advanced multi-level modulation signals using various silicon photonic integrated devices (microring, slot waveguide, hybrid plasmonic waveguide, subwavelength grating slot waveguide). Thirdly, for on-chip photonic processing, we summarize recent works on on-chip data processing of advanced multi-level modulation signals exploiting linear and nonlinear effects in different kinds of silicon photonic integrated devices (strip waveguide, directional coupler, 2D grating coupler, microring, silicon-organic hybrid slot waveguide). Various photonic processing functions are demonstrated, such as photonic switch, filtering, polarization/wavelength/mode (de)multiplexing, wavelength conversion, signal regeneration, optical logic and computing. Additionally, we also introduce extended silicon+ photonics and show recent works on on-chip graphene-silicon photonic signal processing. The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip. It is believed that silicon photonics will enable more and more emerging advanced applications even beyond silicon photonic signaling and processing.