Lambda and the edge of chaos in recurrent neural networks

Excitatory/inhibitory balance emerges as a key factor for RBN performance, overriding attractor dynamics

Reservoir computing provides a time and cost-efficient alternative to traditional learning methods. Critical regimes, known as the "edge of chaos," have been found to optimize computational performance in binary neural networks. However, little attention has been devoted to studying reservoir-to-reservoir variability when investigating the link between connectivity, dynamics, and performance. As physical reservoir computers become more prevalent, developing a systematic approach to network design is crucial. In this article, we examine Random Boolean Networks (RBNs) and demonstrate that specific distribution parameters can lead to diverse dynamics near critical points. We identify distinct dynamical attractors and quantify their statistics, revealing that most reservoirs possess a dominant attractor. We then evaluate performance in two challenging tasks, memorization and prediction, and find that a positive excitatory balance produces a critical point with higher memory performance. In comparison, a negative inhibitory balance delivers another critical point with better prediction performance. Interestingly, we show that the intrinsic attractor dynamics have little influence on performance in either case.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.