Wang X, Zhang G, Xu Y, Wu H, Liu C. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates.
NANOSCALE RESEARCH LETTERS 2017;
12:145. [PMID:
28235380 PMCID:
PMC5321641 DOI:
10.1186/s11671-017-1924-0]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Accepted: 02/14/2017] [Indexed: 06/06/2023]
Abstract
InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 103 at 2 V. This work offers a potential way to grow transferable devices with improving performances.
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