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Hikima K, Sato Y, Yokoi A, Tan WK, Muto H, Matsuda A. Fabrication and electrochemical properties of electrode composites for oxide-type all-solid-state batteries through electrostatic integrated assembly. Heliyon 2023; 9:e17889. [PMID: 37449150 PMCID: PMC10336793 DOI: 10.1016/j.heliyon.2023.e17889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 06/27/2023] [Accepted: 06/30/2023] [Indexed: 07/18/2023] Open
Abstract
All-solid-state batteries, which use flame-resistant solid electrolytes, are regarded as safer alternatives to conventional lithium-ion batteries for various applications including electric vehicles. Herein, we report the fabrication of cathode composites for oxide-type all-solid-state batteries through an electrostatic assembly method. A polyelectrolyte is used to adjust the surface charge of the matrix particles to positive/negative, and the aggregation resulting from electrostatic interactions is utilized. Composites consisting of cathode active material particles (LiNi1/3Mn1/3Co1/3O2 (NMC) or LiNi0.5Mn1.5O4 (LNMO)), solid electrolyte particles Li1.3Al0.3Ti1.7(PO4)3 (LATP), and electron conductive one-dimensional carbon nanotubes (CNT) are formed via an electrostatic integrated assembly of colloidal suspensions. Electrostatic integration increases the electronic conductivity by two orders of magnitude in the NMC-LATP-CNT composite (6.5 × 10-3 S cm-1/3.2 × 10-5 S cm-1) and by six orders of magnitude in the LNMO-LATP-CNT composite (6.4 × 10-3 S cm-1/2.3 × 10-9 S cm-1). The dispersion of CNTs in the cathode composite is enhanced, resulting in percolation of e- path even at 1 wt% (approximately 2.5 vol%) CNT. This study indicates that an integrated cathode composite can be fabricated with particles uniformly mixed by electrostatic interaction for oxide-type all-solid-state batteries.
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Affiliation(s)
- Kazuhiro Hikima
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
| | - Yusaku Sato
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
| | - Atsushi Yokoi
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
| | - Wai Kian Tan
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
| | - Hiroyuki Muto
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
| | - Atsunori Matsuda
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan
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Liu Y, Li Q, Zhu H, Ji L, Sun Q, Zhang DW, Chen L. Dual-gate manipulation of a HfZrOx-based MoS 2 field-effect transistor towards enhanced neural network applications. NANOSCALE 2022; 15:313-320. [PMID: 36484482 DOI: 10.1039/d2nr05720d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Artificial neural networks (ANNs) have strong learning and computing capabilities, and alleviate the problem of high power consumption of traditional von Neumann architectures, providing a solid basis for advanced image recognition, information processing, and low-power detection. Recently, a two-dimensional (2D) MoS2 field-effect transistor (FET) integrating a Zr-doped HfO2 (HZO) ferroelectric layer has shown potential for both logic and memory applications with low power consumption, which is promising for parallel processing of massive data. However, the long-term potentiation (LTP) characteristics of such devices are usually non-linear, which will affect the replacement of ANN weight values and degrade the ANN recognition rate. Here, we propose a dual-gate-controlled 2D MoS2 FET employing HZO gate stack with a crested symmetric structure to reduce power consumption. Improved nonlinearity of the LTP properties has been achieved through the electrical control of the dual gates. A recognition rate reaching 100% is obtained after 60 training epochs, and is 7.89% higher than that obtained from single-gate devices. Our proposed device structure and experimental results provide an attractive pathway towards high-efficiency data processing and image classification in the advanced artificial intelligence field.
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Affiliation(s)
- Yilun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - Qingxuan Li
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - Qingqing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
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Tan WK, Kuwana T, Yokoi A, Kawamura G, Matsuda A, Muto H. Electrostatically assembled SiC–Al2O3 composite particles for direct selective laser sintering. ADV POWDER TECHNOL 2021. [DOI: 10.1016/j.apt.2021.04.018] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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Electrostatic Assembly Technique for Novel Composites Fabrication. JOURNAL OF COMPOSITES SCIENCE 2020. [DOI: 10.3390/jcs4040155] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Electrostatic assembly is one of the bottom–up approaches used for multiscale composite fabrication. Since its discovery, this method has been actively used in molecular bioscience as well as materials design and fabrication for various applications. Despite the recent advances and controlled assembly reported using electrostatic interaction, the method still possesses vast potentials for various materials design and fabrication. This review article is a timely revisit of the electrostatic assembly method with a brief introduction of the method followed by surveys of recent advances and applications of the composites fabricated. Emphasis is also given to the significant potential of this method for advanced materials and composite fabrication in line with sustainable development goals. Prospective outlook and future developments for micro-/nanocomposite materials fabrication for emerging applications such as energy-related fields and additive manufacturing are also mentioned.
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Jamrozik A, Strzemiecka B, Jakubowska P, Koltsov I, Klapiszewski Ł, Voelkel A, Jesionowski T. The effect of lignin-alumina hybrid additive on the properties of composition used in abrasive tools. Int J Biol Macromol 2020; 161:531-538. [DOI: 10.1016/j.ijbiomac.2020.06.071] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2020] [Revised: 06/01/2020] [Accepted: 06/08/2020] [Indexed: 10/24/2022]
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Design of Heat-Conductive hBN-PMMA Composites by Electrostatic Nano-Assembly. NANOMATERIALS 2020; 10:nano10010134. [PMID: 31940902 PMCID: PMC7022472 DOI: 10.3390/nano10010134] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Revised: 01/07/2020] [Accepted: 01/09/2020] [Indexed: 11/16/2022]
Abstract
Micro/nanoscale design of composite materials enables alteration of their properties for advanced functional materials. One of the biggest challenges in material design is the controlled decoration of composite materials with the desired functional additives. This study reports on and demonstrates the homogeneous decoration of hexagonal boron nitride (hBN) on poly(methylmethacrylate) (PMMA) and vice versa. The formation of the composite materials was conducted via a low environmental load and a low-energy-consuming, electrostatic nano-assembly method which also enabled the efficient usage of nano-sized additives. The hBN/PMMA and PMMA/hBN composites were fabricated in various size combinations that exhibited percolated and layer-oriented structures, respectively. The thermal conductivity behaviors of hBN/PMMA and PMMA/hBN composites that exhibited good microstructure were compared. The results showed that microstructural design of the composites enabled the modification of their heat-conducting property. This novel work demonstrated the feasibility of fabricating heat-conductive PMMA matrix composites with controlled decoration of hBN sheets, which may provide a platform for further development of heat-conductive polymeric materials.
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Tan WK, Araki Y, Yokoi A, Kawamura G, Matsuda A, Muto H. Micro- and Nano-assembly of Composite Particles by Electrostatic Adsorption. NANOSCALE RESEARCH LETTERS 2019; 14:297. [PMID: 31463773 PMCID: PMC6713769 DOI: 10.1186/s11671-019-3129-1] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2019] [Accepted: 08/19/2019] [Indexed: 06/10/2023]
Abstract
This work reports on a novel controlled nanocomposite fabrication technique which is applicable for material design via a micro- and nano-assembly method. The principle is based on the use of electrostatic adsorption of the surface charge-modified particles via layer-by-layer assembly. The polarity and the zeta potential of the surface charge was controlled using polycation and polyanion, while the zeta potential strength was controlled via the number of alternating coating layers which was determined using zeta potential measurement. A systematic study was conducted to demonstrate the feasibility of composite material assembly via electrostatic adsorption using alumina (Al2O3) and silica (SiO2) composite as a study model, which was carried out as a function of surface zeta potential, surface coverage percentage, and processing time. The considerable potential of this technique for composite material design is also further demonstrated with controlled assembly involving different materials in various structural forms such as fiber, whisker, nanosheets, and even irregular-shaped foam-like structured urethane. The composite materials designed using this EA method possess good potentials to be utilized for various applications such as mechanical property control, composite ceramic films formation, selective laser sintering, and rechargeable metal-air battery.
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Affiliation(s)
- Wai Kian Tan
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
| | - Yuichi Araki
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
| | - Atsushi Yokoi
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
| | - Go Kawamura
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
| | - Atsunori Matsuda
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
| | - Hiroyuki Muto
- Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 Japan
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Tan WK, Hakiri N, Yokoi A, Kawamura G, Matsuda A, Muto H. Correction to: Controlled Microstructure and Mechanical Properties of Al2O3-Based Nanocarbon Composites Fabricated by Electrostatic Assembly Method. NANOSCALE RESEARCH LETTERS 2019; 14:286. [PMID: 31428937 PMCID: PMC6702481 DOI: 10.1186/s11671-019-3122-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Please note that in the original article [1] the name of the second author, Norio Hakiri, was erroneously ordered; the name was ordered with the given and family names the wrong way around, as 'Hakiri Norio'.
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Affiliation(s)
- Wai Kian Tan
- Institute of Liberal Arts & Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan.
| | - Norio Hakiri
- Department of Electrical & Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
| | - Atsushi Yokoi
- Institute of Liberal Arts & Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
| | - Go Kawamura
- Department of Electrical & Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
| | - Atsunori Matsuda
- Department of Electrical & Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
| | - Hiroyuki Muto
- Institute of Liberal Arts & Sciences, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi, Aichi, 441-8580, Japan
- Department of Electrical & Electronics Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
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