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Ettouri R, Tillocher T, Lefaucheux P, Boutaud B, Fernandez V, Fairley N, Cardinaud C, Girard A, Dussart R. Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching. SURF INTERFACE ANAL 2021. [DOI: 10.1002/sia.7030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Rim Ettouri
- Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) CNRS‐University of Orléans Orléans Cedex 2 France
- MISTIC SAS Issy‐les‐Moulineaux 92130 France
| | - Thomas Tillocher
- Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) CNRS‐University of Orléans Orléans Cedex 2 France
| | - Philippe Lefaucheux
- Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) CNRS‐University of Orléans Orléans Cedex 2 France
| | | | - Vincent Fernandez
- Institut des matériaux Jean‐Rouxel (IMN) CNRS‐University of Nantes Nantes France
| | - Neal Fairley
- Casa Software Ltd Bay House, 5 Grosvenor Terrace Teignmouth Devon TQ14 8NE UK
| | - Christophe Cardinaud
- Institut des matériaux Jean‐Rouxel (IMN) CNRS‐University of Nantes Nantes France
| | - Aurélie Girard
- Institut des matériaux Jean‐Rouxel (IMN) CNRS‐University of Nantes Nantes France
| | - Rémi Dussart
- Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) CNRS‐University of Orléans Orléans Cedex 2 France
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2
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Dhindsa N, Saini SS. Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask. NANOTECHNOLOGY 2017; 28:235301. [PMID: 28448274 DOI: 10.1088/1361-6528/aa6fe9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A novel fabrication method using controlled sacrificial etching of the mask is utilized to fabricate tapered vertical GaAs nanowire arrays. Experimental measurements of the absorption characteristics show that the tapered nanowires absorb over a broadband range as compared to cylindrical ones. The broadband characterization is verified by using optical modeling and results from improved coupling of the nanowires due to distinct radial HE modes being excited separately in the taper and the cylindrical part. The absorption is found to be more broadband as compared to conical nanowires studied so far.
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Affiliation(s)
- Navneet Dhindsa
- Department of Electrical and Computer Engineering & Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave W, Waterloo, ON, N2L 3G1, Canada
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Hasan J, Jain S, Chatterjee K. Nanoscale Topography on Black Titanium Imparts Multi-biofunctional Properties for Orthopedic Applications. Sci Rep 2017; 7:41118. [PMID: 28112235 PMCID: PMC5253769 DOI: 10.1038/srep41118] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2016] [Accepted: 12/14/2016] [Indexed: 01/08/2023] Open
Abstract
We have developed a chlorine based reactive ion etching process to yield randomly oriented anisotropic nanostructures that render the titanium metal surface 'black' similar to that of black silicon. The surface appears black due to the nanostructures in contrast to the conventional shiny surface of titanium. The nanostructures were found to kill bacteria on contact by mechanically rupturing the cells as has been observed previously on wings of certain insects. The etching was optimized to yield nanostructures of ≈1 μm height for maximal bactericidal efficiency without compromising cytocompatibility. Within 4 hours of contact with the black titanium surface, 95% ± 5% of E. coli, 98% ± 2% of P. aeruginosa, 92% ± 5% of M. smegmatis and 22% ± 8% of S. aureus cells that had attached were killed. The killing efficiency for the S. aureus increased to 76% ± 4% when the cells were allowed to adhere up to 24 hours. The black titanium supported the attachment and proliferation of human mesenchymal stem cells and augmented osteogenic lineage commitment in vitro. Thus, the bioinspired nanostructures on black titanium impart multi-biofunctional properties toward engineering the next-generation biomaterials for orthopedic implants.
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Affiliation(s)
- Jafar Hasan
- Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Shubham Jain
- Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kaushik Chatterjee
- Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India
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4
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Wang S, Liu X, Wang L, Wen Q, Du N, Huang J. Formation mechanism and properties of fluoride–phosphate conversion coating on titanium alloy. RSC Adv 2017. [DOI: 10.1039/c6ra27199e] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Formation mechanism of fluoride–phosphate conversion coating on titanium alloy.
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Affiliation(s)
- Shuaixing Wang
- National Defense Key Discipline Laboratory of Light Alloy Processing Science and Technology
- Nanchang Hangkong University
- Nanchang 330063
- P. R. China
| | - Xiaohui Liu
- National Defense Key Discipline Laboratory of Light Alloy Processing Science and Technology
- Nanchang Hangkong University
- Nanchang 330063
- P. R. China
| | - Liqiang Wang
- AVIC Chengdu Aircraft Industrial (Group) Co., Ltd
- Chengdu 610091
- P. R. China
| | - Qingjie Wen
- AVIC Chengdu Aircraft Industrial (Group) Co., Ltd
- Chengdu 610091
- P. R. China
| | - Nan Du
- National Defense Key Discipline Laboratory of Light Alloy Processing Science and Technology
- Nanchang Hangkong University
- Nanchang 330063
- P. R. China
| | - Jianhang Huang
- National Defense Key Discipline Laboratory of Light Alloy Processing Science and Technology
- Nanchang Hangkong University
- Nanchang 330063
- P. R. China
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5
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Stanford MG, Mahady K, Lewis BB, Fowlkes JD, Tan S, Livengood R, Magel GA, Moore TM, Rack PD. Laser-Assisted Focused He + Ion Beam Induced Etching with and without XeF 2 Gas Assist. ACS APPLIED MATERIALS & INTERFACES 2016; 8:29155-29162. [PMID: 27700046 DOI: 10.1021/acsami.6b09758] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. Finally, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ∼9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.
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Affiliation(s)
- Michael G Stanford
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Kyle Mahady
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Brett B Lewis
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Jason D Fowlkes
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Shida Tan
- Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States
| | - Richard Livengood
- Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States
| | - Gregory A Magel
- Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States
| | - Thomas M Moore
- Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
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6
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Kasashima Y, Uesugi F. Feasibility study of monitoring of plasma etching chamber conditions using superimposed high-frequency signals on rf power transmission line. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2015; 86:105107. [PMID: 26520984 DOI: 10.1063/1.4932609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
An in situ monitoring system that can detect changes in the conditions of a plasma etching chamber has been developed. In the system, low-intensity high-frequency signals are superimposed on the rf power transmission line used for generating plasma. The system measures reflected high-frequency signals and detects the change in their frequency characteristics. The results indicate that the system detects the changes in the conditions in etching chambers caused by the changes in the electrode gap and the inner wall condition and demonstrate the effectiveness of the system. The system can easily be retrofitted to mass-production equipment and it can be used with or without plasma discharge. Therefore, our system is suitable for in situ monitoring of mass-production plasma etching chambers. The system is expected to contribute to development of predictive maintenance, which monitors films deposited on the inner wall of the chamber and prevents equipment faults caused by misalignment of chamber parts in mass-production equipment.
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Affiliation(s)
- Y Kasashima
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Tosu, Saga 841-0052, Japan
| | - F Uesugi
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Tosu, Saga 841-0052, Japan
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7
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Patra S, Davoisne C, Bouyanfif H, Foix D, Sauvage F. Phase stability frustration on ultra-nanosized anatase TiO2. Sci Rep 2015; 5:10928. [PMID: 26042388 PMCID: PMC4455250 DOI: 10.1038/srep10928] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2014] [Accepted: 05/07/2015] [Indexed: 11/09/2022] Open
Abstract
This work sheds light on the exceptional robustness of anatase TiO2 when it is downsized to an extreme value of 4 nm. Since at this size the surface contribution to the volume becomes predominant, it turns out that the material becomes significantly resistant against particles coarsening with temperature, entailing a significant delay in the anatase to rutile phase transition, prolonging up to 1000 °C in air. A noticeable alteration of the phase stability diagram with lithium insertion is also experienced. Lithium insertion in such nanocrystalline anatase TiO2 converts into a complete solid solution until almost Li1TiO2, a composition at which the tetragonal to orthorhombic transition takes place without the formation of the emblematic and unwished rock salt Li1TiO2 phase. Consequently, excellent reversibility in the electrochemical process is experienced in the whole portion of lithium content.
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Affiliation(s)
- Snehangshu Patra
- Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, CNRS UMR 7314, 33 rue Saint Leu, 80039 Amiens, France
- Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, France
| | - Carine Davoisne
- Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, CNRS UMR 7314, 33 rue Saint Leu, 80039 Amiens, France
- Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, France
| | - Houssny Bouyanfif
- Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens, France
| | - Dominique Foix
- Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, France
- IPREM/ECP (CNRS UMR5254), University of Pau, Helioparc, 2 Av. Pierre Angot, 64053 Pau Cedex 9, France
| | - Frédéric Sauvage
- Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, CNRS UMR 7314, 33 rue Saint Leu, 80039 Amiens, France
- Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, France
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8
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Abramova V, Slesarev AS, Tour JM. Meniscus-mask lithography for fabrication of narrow nanowires. NANO LETTERS 2015; 15:2933-2937. [PMID: 25826605 DOI: 10.1021/nl504716u] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We demonstrate the efficiency of meniscus-mask lithography (MML) for fabrication of precisely positioned nanowires in a variety of materials. Si, SiO2, Au, Cr, W, Ti, TiO2, and Al nanowires are fabricated and characterized. The average widths, depending on the materials, range from 6 to 16 nm. A broad range of materials and etching processes are used and the generality of approach suggests the applicability of MML to a majority of materials used in modern planar technology. High reproducibility of the MML method is shown and some fabrication issues specific to MML are addressed. Crossbar structures produced by MML demonstrate that junctions of nanowires could be fabricated as well, providing the building blocks required for fabrication of nanowire structures of varied planar geometry.
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Affiliation(s)
- Vera Abramova
- †Departments of Chemistry, ‡Materials Science and NanoEngineering, and §Computer Science and the ∥Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005, United States
| | - Alexander S Slesarev
- †Departments of Chemistry, ‡Materials Science and NanoEngineering, and §Computer Science and the ∥Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005, United States
| | - James M Tour
- †Departments of Chemistry, ‡Materials Science and NanoEngineering, and §Computer Science and the ∥Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005, United States
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9
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Seo D, Lee J, Kim SW, Kim I, Na J, Hong MH, Choi HJ. Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts. NANOSCALE RESEARCH LETTERS 2015; 10:190. [PMID: 26034411 PMCID: PMC4447726 DOI: 10.1186/s11671-015-0893-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/03/2015] [Accepted: 04/07/2015] [Indexed: 06/04/2023]
Abstract
UNLABELLED We grew silicon nanowires (SiNWs) by a vapor-liquid-solid (VLS) mechanism using metal catalysts of gold (Au), titanium (Ti), manganese (Mn), and iron (Fe) under a high flow rate of hydrogen (H2). This combination of catalyst types and high gas flow rate revealed the potential for growing various SiNWs, including kinked SiNWs (with Au), ultra-thin SiNWs having diameters about 5 nm (with Ti), rough-surfaced SiNWs (with Mn), and ribbon-shaped SiNWs tens of microns in width (with Fe). The high flow rate of gas affects the VLS mechanism differently for each combination; for example, it induces an unstable solid-liquid interfaces (with Au), active etching of the catalyst (with Ti), sidewall deposition by a vapor-solid (VS) mechanism, and an asymmetric precipitation of Si in the catalyst (with Fe). Our combinatorial approach may provide a new path for the structural modulation of SiNWs via the VLS mechanism. PACS 80; 81; 82.
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Affiliation(s)
- Dongjea Seo
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Jaejun Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Sung Wook Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Ilsoo Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Jukwan Na
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Min-Ho Hong
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
| | - Heon-Jin Choi
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 Korea
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10
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Noh JH, Fowlkes JD, Timilsina R, Stanford MG, Lewis BB, Rack PD. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport. ACS APPLIED MATERIALS & INTERFACES 2015; 7:4179-4184. [PMID: 25629708 DOI: 10.1021/am508443s] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.
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Affiliation(s)
- J H Noh
- Department of Materials Science, Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
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11
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Kim SY, van Duin ACT. Simulation of Titanium Metal/Titanium Dioxide Etching with Chlorine and Hydrogen Chloride Gases Using the ReaxFF Reactive Force Field. J Phys Chem A 2013; 117:5655-63. [DOI: 10.1021/jp4031943] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Sung-Yup Kim
- Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park,
Pennsylvania 16802, United States
| | - Adri C. T. van Duin
- Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park,
Pennsylvania 16802, United States
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12
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Domanski M, Luttge R, Lamers E, Walboomers XF, Winnubst L, Jansen JA, Gardeniers JGE. Submicron-patterning of bulk titanium by nanoimprint lithography and reactive ion etching. NANOTECHNOLOGY 2012; 23:065306. [PMID: 22248677 DOI: 10.1088/0957-4484/23/6/065306] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Nanopatterns on titanium may enhance endosseous implant biofunctionality. To enable biological studies to prove this hypothesis, we developed a scalable method of fabricating nanogrooved titanium substrates. We defined nanogrooves by nanoimprint lithography (NIL) and a subsequent pattern transfer to the surface of ASTM grade 2 bulk titanium applying a soft-mask for chlorine-based reactive ion etching (RIE). With respect to direct write lithographic techniques the method introduced here is fast and capable of delivering uniformly patterned areas of at least 4 cm(2). A dedicated silicon nanostamp process has been designed to generate the required thickness of the soft-mask for the NIL-RIE pattern transfer. Stamps with pitch sizes from 1000 nm down to 300 nm were fabricated using laser interference lithography (LIL) and deep cryogenic silicon RIE. Although silicon nanomachining was proven to produce smaller pitch sizes of 200 nm and 150 nm respectively, successful pattern transfer to titanium was only possible down to a pitch of 300 nm. Hence, the smallest nanogrooves have a width of 140 nm. An x-ray photoelectron spectroscopy study showed that only very few contaminations arise from the fabrication process and a cytotoxicity assay on the nanopatterned surfaces confirmed that the obtained nanogrooved titanium specimens are suitable for in vivo studies in implantology research.
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Affiliation(s)
- M Domanski
- Mesoscale Chemical Systems, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
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13
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Alaeddine A, Genevois C, Chevalier L, Daoud K. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs. NANOSCALE RESEARCH LETTERS 2011; 6:574. [PMID: 22040059 PMCID: PMC3218260 DOI: 10.1186/1556-276x-6-574] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2011] [Accepted: 10/31/2011] [Indexed: 05/31/2023]
Abstract
A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presence of initial defects introduced during technological processes play a major role in the acceleration of degradation mechanisms of the structure during stress. A combination of energy-filtered transmission electron microscopy analysis with high angle annular dark field STEM and energy dispersive spectroscopy provides strong evidence that migration of Au-Pt from the metal contacts to Ti/Si3N4 interface is one of the precursors to species interdiffusion and reactions. High current densities and related local heating effects induce the evolution of the pure Ti initial layer into mixture layer composed of Ti, O, and N. Local contamination of Ti layers by fluorine atoms is also pointed out, as well as rupture of TiN thin barrier layer.
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Affiliation(s)
- Ali Alaeddine
- Université de Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l'Université, 76801 Saint Etienne de Rouvray, France
| | - Cécile Genevois
- Université de Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l'Université, 76801 Saint Etienne de Rouvray, France
| | - Laurence Chevalier
- Université de Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l'Université, 76801 Saint Etienne de Rouvray, France
| | - Kaouther Daoud
- Université de Rouen, GPM, UMR CNRS 6634, BP 12, Avenue de l'Université, 76801 Saint Etienne de Rouvray, France
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14
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Schoenaker FJ, Córdoba R, Fernández-Pacheco R, Magén C, Stéphan O, Zuriaga-Monroy C, Ibarra MR, De Teresa JM. Focused electron beam induced etching of titanium with XeF2. NANOTECHNOLOGY 2011; 22:265304. [PMID: 21586811 DOI: 10.1088/0957-4484/22/26/265304] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF(2) as a precursor gas. Etch rates up to 1.25 × 10(-3) µm(3) s(-1) and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.
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Affiliation(s)
- F J Schoenaker
- Instituto de Nanociencia de Aragón, Universidad de Zaragoza, Zaragoza, Spain
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15
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Lee B, Hwang DK, Guo P, Ho ST, Buchholtz DB, Wang CY, Chang RPH. Materials, interfaces, and photon confinement in dye-sensitized solar cells. J Phys Chem B 2010; 114:14582-91. [PMID: 21070056 DOI: 10.1021/jp102359r] [Citation(s) in RCA: 73] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A series of experiments have been carried out to study the effects of materials quality, surface and interfacial modification, and photon confinement on standard dye-sensitized solar cells. For these studies, both physical and optical characterization of the materials has been performed in detail. In addition, DC and AC impedance measurements along with kinetic charge-transport modeling of experimental results have yielded information on how to systematically optimize the cell efficiency. The same kinetic model has been used to interpret the results of a series of experiments on interfacial modification studies using fluorine etching in combination with TiCl(4) surface treatment. By using specially designed photonic crystals to confine the photons in the cells, it is shown that the best cell efficiency can be further increased by about 13%.
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Affiliation(s)
- Byunghong Lee
- Materials Research Institute, Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
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