Spatial eigenmodes conversion with metasurfaces engraved in silicon ridge waveguides

Optical mode conversion via spatiotemporally modulated atomic susceptibility

Light is an excellent medium for both classical and quantum information transmission due to its speed, manipulability, and abundant degrees of freedom into which to encode information. Recently, space-division multiplexing has gained attention as a means to substantially increase the rate of information transfer by utilizing sets of infinite-dimensional propagation eigenmodes such as the Laguerre-Gaussian "donut" modes. Encoding in these high-dimensional spaces necessitates devices capable of manipulating photonic degrees of freedom with high efficiency. In this work, we demonstrate controlling the optical susceptibility of an atomic sample can be used as powerful tool for manipulating the degrees of freedom of light that pass through the sample. Utilizing this tool, we demonstrate photonic mode conversion between two Laguerre-Gaussian modes of a twisted optical cavity with high efficiency. We spatiotemporally modulate the optical susceptibility of an atomic sample that sits at the cavity waist using an auxiliary Stark-shifting beam, in effect creating a mode-coupling optic that converts modes of orbital angular momentum l = 3 → l = 0. The internal conversion efficiency saturates near unity as a function of the atom number and modulation beam intensity, finding application in topological few-body state preparation, quantum communication, and potential development as a flexible tabletop device.

Metamaterial-enabled arbitrary on-chip spatial mode manipulation

On-chip spatial mode operation, represented as mode-division multiplexing (MDM), can support high-capacity data communications and promise superior performance in various systems and numerous applications from optical sensing to nonlinear and quantum optics. However, the scalability of state-of-the-art mode manipulation techniques is significantly hindered not only by the particular mode-order-oriented design strategy but also by the inherent limitations of possibly achievable mode orders. Recently, metamaterials capable of providing subwavelength-scale control of optical wavefronts have emerged as an attractive alternative to manipulate guided modes with compact footprints and broadband functionalities. Herein, we propose a universal yet efficient design framework based on the topological metamaterial building block (BB), enabling the excitation of arbitrary high-order spatial modes in silicon waveguides. By simply programming the layout of multiple fully etched dielectric metamaterial perturbations with predefined mathematical formulas, arbitrary high-order mode conversion and mode exchange can be simultaneously realized with uniform and competitive performance. The extraordinary scalability of the metamaterial BB frame is experimentally benchmarked by a record high-order mode operator up to the twentieth. As a proof of conceptual application, an 8-mode MDM data transmission of 28-GBaud 16-QAM optical signals is also verified with an aggregate data rate of 813 Gb/s (7% FEC). This user-friendly metamaterial BB concept marks a quintessential breakthrough for comprehensive manipulation of spatial light on-chip by breaking the long-standing shackles on the scalability, which may open up fascinating opportunities for complex photonic functionalities previously inaccessible.

Experimental Observation of Interorbital Coupling

Interorbital coupling refers to the possibility of exciting orbital states by otherwise orthogonal noninteracting modes, a forbidden process in photonic lattices due to intrinsic propagation constant detuning. In this Letter, using a femtosecond (fs) laser writing technique, we experimentally demonstrate that fundamental and excited orbital states can couple each other when located at different spatial positions. We perform a full characterization of an asymmetric double-well-like potential and implement a scan method to effectively map the dynamics along the propagation coordinate. Our fundamental observation also constitutes a direct solution for a spatial mode converter device, which could be located in any position inside a photonic glass chip. By taking advantage of the phase structure of higher-order photonic modes and the effective negative coupling generated, we propose a trimer configuration as a phase beam splitter, which could be of great relevance for multiplexing and interference-based photonic concatenated operations.

Etched circular waveguide-based on-chip silicon mode-order converters

Mode-order converters act as the vital higher-order mode sources for on-chip multimode applications. Here, we propose a silicon-based mode-order conversion scheme by leveraging etching slots on the circular waveguide. Through designing and optimizing the etching slots and circular waveguide, the mode-order conversion from input TE₀ mode to output TE₁ mode has been achieved with the mode conversion efficiency of 99.1%, modal crosstalk of -25.7dB, and insertion loss of 0.21 dB, respectively, in a mode conversion size of ∼8µm×8µm (TE₀-TE₁). For the device fabrication, only one-step lithography and etching processes will be required, and the requirements of slot width (600 nm) and slot gap (1.49 µm) would be very beneficial for the device fabrication. Moreover, the proposed device scheme can also help achieve other higher-order mode conversions, such TE₀-TE₂ and TE₀-TE₃, where their structural parameters and performances are also analyzed. With these features of relatively good device performance, compact size, easy fabrication, and functional scalability, we believe the proposed scheme would be applied in the on-chip multimode applications to enhance their transmission capacities.

Ultra-compact silicon mode-order converters based on dielectric slots

Ultra-compact mode-order converters with dielectric slots are demonstrated on a silicon-on-insulator platform. We propose a mode converter that converts the TE0 mode into the TE1 mode with an ultra-small footprint of only 0.8×1.2µm². The measured insertion loss is less than 1.2 dB from 1520 nm to 1570 nm. To reduce the insertion loss, we further optimize the structure and design two mode converters that convert the TE0 mode into the TE1 mode and the TE2 mode with footprints of 0.88×2.3µm² and 1.4×2.4µm², respectively. Their measured insertion losses are both less than 0.5 dB. Additionally, the proposed devices are cascadable and scalable for high-order mode conversion.