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Shaikh MS, Wen S, Catuneanu MT, Wang M, Erbe A, Prucnal S, Rebohle L, Zhou S, Jamshidi K, Helm M, Berencén Y. On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands. OPTICS EXPRESS 2023; 31:26451-26462. [PMID: 37710506 DOI: 10.1364/oe.494463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 06/15/2023] [Indexed: 09/16/2023]
Abstract
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.
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2
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Li Z, Li Q, Li H, Tian F, Du M, Fang S, Liu R, Zhang L, Liu B. Pressure-Tailored Self-Driven and Broadband Photoresponse in PbI 2. SMALL METHODS 2022; 6:e2201044. [PMID: 36351755 DOI: 10.1002/smtd.202201044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/02/2022] [Indexed: 06/16/2023]
Abstract
Photoelectric devices based on the photothermoelectric (PTE) effect show promising prospects for broadband detection without an external power supply. However, effective strategies are still required to regulate the conversion efficiency of light to heat and electricity. Herein, significantly enhanced photoresponse properties of PbI2 generated from a PTE mechanism via a high-pressure strategy are reported. PbI2 exhibits a stable, fast, self-driven, and broadband photoresponse at ≈980 nm. Intriguingly, the synergy of the photoconductivity and PTE mechanism is conducive to enhancing the photoelectric properties, and extending the detection bandwidth to the optical communication waveband (1650 nm) with an external bias. The dramatically enhanced photoresponse characteristics are attributed to narrowing of the band gap and a significantly decreased resistance, which originate from the enhancement of atomic orbital overlap owing to pressure-induced Pb-I bond contraction. These findings open up a new avenue toward designing self-driven and broadband photoelectric devices.
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Affiliation(s)
- Zonglun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Quanjun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Haiyan Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Fuyu Tian
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Mingyang Du
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Sixue Fang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Ran Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bingbing Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
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3
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Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure. SENSORS 2022; 22:s22124536. [PMID: 35746318 PMCID: PMC9229662 DOI: 10.3390/s22124536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 06/02/2022] [Accepted: 06/08/2022] [Indexed: 11/17/2022]
Abstract
Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at -1 V, as well as a low dark current density on the order of 10-5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.
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4
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Parhizkar S, Prechtl M, Giesecke AL, Suckow S, Wahl S, Lukas S, Hartwig O, Negm N, Quellmalz A, Gylfason K, Schall D, Wuttig M, Duesberg GS, Lemme MC. Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors. ACS PHOTONICS 2022; 9:859-867. [PMID: 35308407 PMCID: PMC8931762 DOI: 10.1021/acsphotonics.1c01517] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Indexed: 05/11/2023]
Abstract
Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe2) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe2-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe2 for PDs far into the IR wavelength range. Our PtSe2 PDs integrated by direct growth outperform PtSe2 PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe2 an attractive 2D material for optoelectronics and PICs.
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Affiliation(s)
- Shayan Parhizkar
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Maximilian Prechtl
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Anna Lena Giesecke
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Sophia Wahl
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Sebastian Lukas
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
| | - Oliver Hartwig
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Nour Negm
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Arne Quellmalz
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Kristinn Gylfason
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Daniel Schall
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
- Black Semiconductor
GmbH, Schloss-Rahe-Straße
15, 52072 Aachen, Germany
| | - Matthias Wuttig
- Institute
of Physics IA, RWTH Aachen University, Otto-Blumenthal-Straße, 52074 Aachen, Germany
| | - Georg S. Duesberg
- Institute
of Physics, Faculty of Electrical Engineering and Information Technology
(EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, 85577 Neubiberg, Germany
| | - Max C. Lemme
- Chair
of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO
GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
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5
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III-V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber. Sci Rep 2021; 11:13813. [PMID: 34226651 PMCID: PMC8257772 DOI: 10.1038/s41598-021-93398-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2021] [Accepted: 06/24/2021] [Indexed: 11/30/2022] Open
Abstract
Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the difficulties in directly growing high-quality III–V on silicon and realizing functionalities have been a challenge. Here, we propose a design of III–V nanowires on silicon (100) substrates, which are self-assembled with gold plasmonic nanostructures, as a key building block for efficient and functional photodetectors on silicon. Partially gold-coated III–V nanowire arrays form a plasmonic-photonic hybrid metasurface, wherein the localized and propagating plasmonic resonances enable high absorption in III–V nanowires. Unlike conventional photodetectors, numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to the polarization, incident angle, wavelength of input light, as well as the surrounding environment. These features represent that the proposed meta-absorber design can be utilized not only for efficient infrared photodetectors on silicon but for various sensing applications with high sensitivity and functionality.
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6
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Martini F, Cibella S, Gaggero A, Mattioli F, Leoni R. Waveguide integrated hot electron bolometer for classical and quantum photonics. OPTICS EXPRESS 2021; 29:7956-7965. [PMID: 33820252 DOI: 10.1364/oe.410317] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Accepted: 12/21/2020] [Indexed: 06/12/2023]
Abstract
The development of performant integrated detectors, which are sensitive to quantum fluctuations of coherent light, are strongly desired to realize a scalable and determinist photonic quantum processor based on continuous variables states of light. Here, we investigate the performance of hot electron bolometers (HEBs) fabricated on top of a silicon-on-insulator (SOI) photonic circuit showing responsivities up to 8600 V/W and a record noise equivalent temperature of 1.1 dB above the quantum limit. Thanks to a detailed analysis of the noise sources of the waveguide integrated HEB, we estimate 14.8 dBV clearance between the shot noise and electrical noise with just 1.1µW of local oscillator power. The full technology compatibility with superconducting nanowire single photon detectors (SNSPDs) opens the possibility of nonclassical state engineering and state tomography performed within the same platform, enabling a new class of optical quantum processors.
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7
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Chatterjee A, Yadav S, Kumar Sikdar S, Kumar Selvaraja S. Compact ring resonator enhanced silicon metal-semiconductor-metal photodetector in SiN-on-SOI platform. OPTICS EXPRESS 2020; 28:33644-33655. [PMID: 33115024 DOI: 10.1364/oe.400864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2020] [Accepted: 10/06/2020] [Indexed: 06/11/2023]
Abstract
We present a compact on-chip resonator enhanced silicon metal-semiconductor-metal (MSM) photodetector in 850 nm wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 µm long device. High responsivity is achieved by integrating the detector in a silicon nitride ring resonator. The resonance offers 100X responsivity improvement over a single-pass photodetector due to cavity enhancement. We also present a detailed study of the high-speed response of the cavity and single-pass detector. We report an electro-optic bandwidth of 7.5 GHz measured using a femtosecond optical excitation. To the best of our knowledge, we report for the first time silicon nitride resonator integrated Si-MSM detector in SiN-SOI platform.
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8
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Gherabli R, Grajower M, Shappir J, Mazurski N, Wofsy M, Inbar N, Khurgin JB, Levy U. Role of surface passivation in integrated sub-bandgap silicon photodetection. OPTICS LETTERS 2020; 45:2128-2131. [PMID: 32236086 DOI: 10.1364/ol.388983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2020] [Accepted: 03/03/2020] [Indexed: 06/11/2023]
Abstract
We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.
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9
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Wang F, Zhang Y, Gao Y, Luo P, Su J, Han W, Liu K, Li H, Zhai T. 2D Metal Chalcogenides for IR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901347. [PMID: 31111680 DOI: 10.1002/smll.201901347] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 04/16/2019] [Indexed: 05/25/2023]
Abstract
Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next-generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs-based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yue Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yu Gao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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10
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Huang L, Dong B, Guo X, Chang Y, Chen N, Huang X, Liao W, Zhu C, Wang H, Lee C, Ang KW. Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications. ACS NANO 2019; 13:913-921. [PMID: 30586289 DOI: 10.1021/acsnano.8b08758] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Midinfrared (MIR), which covers numerous molecular vibrational fingerprints, has attracted enormous research interest due to its promising potential for label-free and damage-free sensing. Despite intense development efforts, the realization of waveguide-integrated on-chip sensing system has seen very limited success to date. The huge lattice mismatch between silicon and the commonly used detection materials such as HgCdTe, III-V, or II-VI compounds has been the key bottleneck that hinders their integration. Here, we realize an integration of silicon-on-insulator (SOI) waveguides with black phosphorus (BP) photodetectors. When operating near BP's cutoff wavelength where absorption is weak, the light-BP interaction is enhanced by exploiting the optical confinement in the Si waveguide and grating structure to overcome the limitation of absorption length constrained by the BP thickness. Devices with different BP crystal orientation and thickness are compared in terms of their responsivity and noise equivalent power (NEP). Spectral photoresponse from 3.68 to 4.03 μm was investigated. Additionally, power-dependent responsivity and gate-tunable photocurrent were also studied. At a bias of 1 V, the BP photodetector achieved a responsivity of 23 A/W at 3.68 μm and 2 A/W at 4 μm and a NEP less than 1 nW/Hz1/2 at room temperature. The integration of passive Si photonics and active BP photodetector is envisaged to offer a potential pathway toward the realization of integrated on-chip systems for MIR sensing applications.
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Affiliation(s)
- Li Huang
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546
| | - Bowei Dong
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- NUS Graduate School for Integrative Sciences & Engineering , National University of Singapore , 28 Medical Drive , Singapore 117456
| | - Xin Guo
- School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798
| | - Yuhua Chang
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
| | - Nan Chen
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
| | - Xin Huang
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546
| | - Wugang Liao
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546
| | - Chunxiang Zhu
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546
| | - Hong Wang
- School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- NUS Graduate School for Integrative Sciences & Engineering , National University of Singapore , 28 Medical Drive , Singapore 117456
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , Singapore 117546
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11
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Su Z, Hosseini ES, Timurdogan E, Sun J, Moresco M, Leake G, Adam TN, Coolbaugh DD, Watts MR. Whispering gallery germanium-on-silicon photodetector. OPTICS LETTERS 2017; 42:2878-2881. [PMID: 28957197 DOI: 10.1364/ol.42.002878] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2017] [Accepted: 06/26/2017] [Indexed: 06/07/2023]
Abstract
We design and demonstrate, to the best of our knowledge, the first whispering gallery germanium-on-silicon photodetector with evanescent coupling from a silicon bus waveguide in a CMOS-compatible process. The small footprint (63.6 μm2), high responsivity (∼1.04 A/W at 1530 nm), low bias voltage (-1 V), low dark current (2.03 nA), and large optoelectric bandwidth (32.9 GHz) of the detector enable simultaneous wavelength filtering and power detection, ideal for handling large network data traffic. In addition, with the resonant nature of the detector, we also optimize the design to enable long-wavelength detection, achieving a separate device with a detection range of up to 1630 nm with a >0.45 A/W responsivity, making it an important building block for optical communication networks.
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12
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Thomson DJ, Shen L, Ackert JJ, Huante-Ceron E, Knights AP, Nedeljkovic M, Peacock AC, Mashanovich GZ. Optical detection and modulation at 2µm-2.5µm in silicon. OPTICS EXPRESS 2014; 22:10825-30. [PMID: 24921782 DOI: 10.1364/oe.22.010825] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm.
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13
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Yamada K, Tsuchizawa T, Nishi H, Kou R, Hiraki T, Takeda K, Fukuda H, Ishikawa Y, Wada K, Yamamoto T. High-performance silicon photonics technology for telecommunications applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2014; 15:024603. [PMID: 27877659 PMCID: PMC5090410 DOI: 10.1088/1468-6996/15/2/024603] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2013] [Revised: 04/23/2014] [Accepted: 03/03/2014] [Indexed: 06/06/2023]
Abstract
By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.
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Affiliation(s)
- Koji Yamada
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Tai Tsuchizawa
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Hidetaka Nishi
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Rai Kou
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Tatsurou Hiraki
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Kotaro Takeda
- Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Hiroshi Fukuda
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
| | - Yasuhiko Ishikawa
- Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Kazumi Wada
- Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Tsuyoshi Yamamoto
- Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
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14
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Nozaki K, Matsuo S, Takeda K, Sato T, Kuramochi E, Notomi M. InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure. OPTICS EXPRESS 2013; 21:19022-19028. [PMID: 23938817 DOI: 10.1364/oe.21.019022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.
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Affiliation(s)
- Kengo Nozaki
- NTT Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya Atsugi, Kanagawa 243-0198, Japan.
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Fan X, Huang Y, Ren X, Duan X, Hu F, Wang Q, Cai S, Zhang X. Hybrid integrated photodetector with flat-top steep-edge spectral response. APPLIED OPTICS 2012; 51:5767-5772. [PMID: 22907001 DOI: 10.1364/ao.51.005767] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2012] [Accepted: 07/12/2012] [Indexed: 06/01/2023]
Abstract
Hybrid integrated photodetectors with flat-top steep-edge spectral responses that consist of an Si-based multicavity Fabry-Perot (F-P) filter and an InP-based p-i-n absorption structure (with a 0.2 μm In(0.53)Ga(0.47)As absorption layer), have been designed and fabricated. The performance of the hybrid integrated photodetectors is theoretically investigated by including key factors such as the thickness of each cavity, the pairs of each reflecting mirror, and the thickness of the benzocyclobutene bonding layer. The device is fabricated by bonding an Si-based multicavity F-P filter with an InP-based p-i-n absorption structure. A hybrid integrated photodetector with a peak quantum efficiency of 55% around 1549.2 nm, the -0.5 dB band of 0.43 nm, the 25 dB band of 1.06 nm, and 3 dB bandwidth more than 16 GHz, is simultaneously obtained. Based on multicavity F-P structure, this device has good flat-top steep-edge spectral response.
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Affiliation(s)
- Xinye Fan
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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Abstract
With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.
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Affiliation(s)
- Zhou Fang
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Ce Zhou Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
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Zhang M, Zhang H, Lv K, Chen W, Zhou J, Shen L, Ruan S. Ultraviolet photodetector with high internal gain enhanced by TiO₂/SrTiO₃ heterojunction. OPTICS EXPRESS 2012; 20:5936-41. [PMID: 22418469 DOI: 10.1364/oe.20.005936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
In this letter, TiO₂ nanocrystalline film was prepared on SrTiO₃ (001) substrate to form an n-n heterojunction active layer. Interdigitated Au electrodes were deposited on the top of TiO₂ film to fabricate modified HMSM (heterojunction metal-semiconductor-metal) ultraviolet photodetector. At 10 V bias, the dark current of the detector was only 0.2 nA and the responsivity was 46.1 A/W at 260 nm. The rise and fall times of the device were 3.5 ms and 1.4 s, respectively. The TiO₂/SrTiO₃ heterojunction contributed a lot to the high responsivity and reduced the fall time, which improved the device performance effectively. These results demonstrate the excellent application of TiO₂/SrTiO₃ heterojunction in fabricating high performance UV photodetectors.
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Affiliation(s)
- Min Zhang
- State Key Laboratory on Integrated Optoelectronics, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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Li Y, Meersman S, Baets R. Realization of fiber-based laser Doppler vibrometer with serrodyne frequency shifting. APPLIED OPTICS 2011; 50:2809-2814. [PMID: 21673787 DOI: 10.1364/ao.50.002809] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
We demonstrate a laser Doppler vibrometer (LDV) based on the serrodyne frequency shifting technique. A proof-of-principle system is implemented on the basis of fiber-optic components but opens the way toward an ultracompact integrated LDV system on a silicon chip. With a low laser power of 50 μW, the serrodyne LDV was able to measure submicrometer vibrations with frequencies in the audio range.
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Affiliation(s)
- Yanlu Li
- Photonics Research Group (Department of Information Technology), Ghent University-Interuniversitair Micro-Elektronica Centrum, Sint-Pietersnieuwstraat 41, 9000 Gent, Belgium.
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Reflectively coupled waveguide photodetector for high speed optical interconnection. SENSORS 2010; 10:10863-75. [PMID: 22163502 PMCID: PMC3231058 DOI: 10.3390/s101210863] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2010] [Revised: 10/28/2010] [Accepted: 11/24/2010] [Indexed: 11/16/2022]
Abstract
To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector's planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520-1,550 nm wavelength range and the pass band was 1 nm at the -1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 2(7)-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation.
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