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Guo X, Lu X, Jiang P, Bao X. Touchless Thermosensation Enabled by Flexible Infrared Photothermoelectric Detector for Temperature Prewarning Function of Electronic Skin. Adv Mater 2024:e2313911. [PMID: 38424290 DOI: 10.1002/adma.202313911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/12/2024] [Indexed: 03/02/2024]
Abstract
Artificial skin, endowed with the capability to perceive thermal stimuli without physical contact, will bring innovative interactive experiences into smart robotics and augmented reality. The implementation of touchless thermosensation, responding to both hot and cold stimuli, relies on the construction of a flexible infrared detector operating in the long-wavelength infrared range to capture the spontaneous thermal radiation. This imposes rigorous requirements on the photodetection performance and mechanical flexibility of the detector. Herein, a flexible and wearable infrared detector is presented, on basis of the photothermoelectric coupling of the tellurium-based thermoelectric multilayer film and the infrared-absorbing polyimide substrate. By suppressing the optical reflection loss and aligning the destructive interference position with the absorption peak of polyimide, the fabricated thermopile detector exhibits high sensitivity to the thermal radiation over a broad source temperature range from -50 to 110 °C, even capable of resolving 0.05 °C temperature change. Spatially resolved radiation distribution sensing is also achieved by constructing an integrated thermopile array. Furthermore, an established temperature prewarning system is demonstrated for soft robotic gripper, enabling the identification of noxious thermal stimuli in a contactless manner. A feasible strategy is offered here to integrate the infrared detection technique into the sensory modality of electronic skin.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- School of Biomedical Engineering, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, 215123, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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2
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Li TT, Fan XX, Zhang X, Zhang X, Lou CW, Lin JH. Photothermoelectric Synergistic Hydrovoltaic Effect: A Flexible Photothermoelectric Yarn Panel for Multiple Renewable-Energy Harvesting. ACS Appl Mater Interfaces 2023. [PMID: 38050840 DOI: 10.1021/acsami.3c14033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The human body is in a complex environment affected by body heat, light, and sweat, requiring the development of a wearable multifunctional textile for human utilization. Meanwhile, the traditional thermoelectric yarn is limited by expensive and scarce inorganic thermoelectric materials, which restricts the development of thermoelectric textiles. Therefore, in this paper, photothermoelectric yarns (PPDA-PPy-PEDOT/CuI) using organic poly(3,4-ethylenedioxythiophene) (PEDOT) and inorganic thermoelectric material cuprous iodide (CuI) are used for the thermoelectric layer and poly(pyrrole) (PPy) for the light-absorbing layer. With the introduction of PPy, the temperature difference of the photothermoelectric yarn can be increased for a better voltage output. Subsequently synergizing the photothermoelectric effect with the hydrovoltaic effect to create higher electric potentials, a single wet photothermoelectric yarn obtained by preparation can be irradiated under an infrared lamp at a voltage of up to 0.47 V. Finally, the photothermoelectric yarn PPDA-PPy-PEDOT/CuI was assembled in a series and parallel to obtain a photothermoelectric yarn panel, which was able to output 41.19 mV under an infrared lamp, and the synergistic photothermoelectric and hydrovoltaic effects of the photothermoelectric panel were tested outdoors on human body, and we found that the voltage was able to reach approximately 0.16 V under sunlight. Therefore, the voltage values obtained from the photothermoelectric yarns in this study are competitive and provide a new research idea for the study of photothermoelectric yarns.
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Affiliation(s)
- Ting-Ting Li
- Innovation Platform of Intelligent and Energy-Saving Textiles, School of Textile Science and Engineering, Tiangong University, Tianjin 300387, China
- Tianjin and Education Ministry Key Laboratory of Advanced Textile Composite Materials, Tiangong University, Tianjin 300387, China
| | - Xiao-Xuan Fan
- Innovation Platform of Intelligent and Energy-Saving Textiles, School of Textile Science and Engineering, Tiangong University, Tianjin 300387, China
| | - Xiaoyang Zhang
- Innovation Platform of Intelligent and Energy-Saving Textiles, School of Textile Science and Engineering, Tiangong University, Tianjin 300387, China
| | - Xuefei Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ching-Wen Lou
- Innovation Platform of Intelligent and Energy-Saving Textiles, School of Textile Science and Engineering, Tiangong University, Tianjin 300387, China
- Advanced Medical Care and Protection Technology Research Center, College of Textile and Clothing, Qingdao University, Qingdao 266071, China
- Department of Bioinformatics and Medical Engineering, Asia University, Taichung City 413305, Taiwan
- Department of Medical Research, China Medical University Hospital, China Medical University, Taichung City 404333, Taiwan
| | - Jia-Horng Lin
- Innovation Platform of Intelligent and Energy-Saving Textiles, School of Textile Science and Engineering, Tiangong University, Tianjin 300387, China
- Advanced Medical Care and Protection Technology Research Center, College of Textile and Clothing, Qingdao University, Qingdao 266071, China
- Advanced Medical Care and Protection Technology Research Center, Department of Fiber and Composite Materials, Feng Chia University, Taichung City 407102, Taiwan
- School of Chinese Medicine, China Medical University, Taichung City 404333, Taiwan
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3
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Titova E, Mylnikov D, Kashchenko M, Safonov I, Zhukov S, Dzhikirba K, Novoselov KS, Bandurin DA, Alymov G, Svintsov D. Ultralow-noise Terahertz Detection by p-n Junctions in Gapped Bilayer Graphene. ACS Nano 2023; 17:8223-8232. [PMID: 37094175 DOI: 10.1021/acsnano.2c12285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Graphene shows strong promise for the detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of a band gap. Here, we study the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to a simultaneous increase in current and voltage responsivities. At operating temperatures of ∼25 K, the responsivity at a 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz1/2.
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Affiliation(s)
- Elena Titova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Dmitry Mylnikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Mikhail Kashchenko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Ilya Safonov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
| | - Sergey Zhukov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Kirill Dzhikirba
- Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation
| | - Kostya S Novoselov
- Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
| | - Denis A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Georgy Alymov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
| | - Dmitry Svintsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation
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4
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Li Z, Li Q, Li H, Tian F, Du M, Fang S, Liu R, Zhang L, Liu B. Pressure-Tailored Self-Driven and Broadband Photoresponse in PbI 2. Small Methods 2022; 6:e2201044. [PMID: 36351755 DOI: 10.1002/smtd.202201044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/02/2022] [Indexed: 06/16/2023]
Abstract
Photoelectric devices based on the photothermoelectric (PTE) effect show promising prospects for broadband detection without an external power supply. However, effective strategies are still required to regulate the conversion efficiency of light to heat and electricity. Herein, significantly enhanced photoresponse properties of PbI2 generated from a PTE mechanism via a high-pressure strategy are reported. PbI2 exhibits a stable, fast, self-driven, and broadband photoresponse at ≈980 nm. Intriguingly, the synergy of the photoconductivity and PTE mechanism is conducive to enhancing the photoelectric properties, and extending the detection bandwidth to the optical communication waveband (1650 nm) with an external bias. The dramatically enhanced photoresponse characteristics are attributed to narrowing of the band gap and a significantly decreased resistance, which originate from the enhancement of atomic orbital overlap owing to pressure-induced Pb-I bond contraction. These findings open up a new avenue toward designing self-driven and broadband photoelectric devices.
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Affiliation(s)
- Zonglun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Quanjun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Haiyan Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Fuyu Tian
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Mingyang Du
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Sixue Fang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Ran Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bingbing Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
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5
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Xue Z, Fan Z, Liao X, Li Y, Qin Y, Zhang G, Song X, Liao ZM, Sun D, Lu G, Gong Q. Metasurface Enabled Photothermoelectric Photoresponse of Semimetal Cd 3As 2 for Broadband Photodetection. Nano Lett 2022; 22:8728-8734. [PMID: 36314894 DOI: 10.1021/acs.nanolett.2c03574] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The artificial engineering of photoresponse is crucial for optoelectronic applications, especially for photodetectors. Here, we designed and fabricated a metasurface on a semimetallic Cd3As2 nanoplate to improve its thermoelectric photoresponse. The metasurface can enhance light absorption, resulting in a temperature gradient. This temperature gradient can contribute to thermoelectric photoresponse through the photothermoelectric effect. Furthermore, power-dependent measurements showed a linearly dependent photoresponse of the Cd3As2 metasurface device, indicating a second-order photocurrent response. Wavelength-dependent measurements showed that the metasurface can efficiently separate photoexcited carriers in the broadband range of 488 nm to 4 μm. The photoresponse near the metasurface boundaries exhibits a responsivity of ∼1 mA/W, which is higher than that near the electrode junctions. Moreover, the designed metasurface device provided an anisotropic polarization-dependent photoresponse rather than the isotropic photoresponse of the original Cd3As2 device. This study demonstrates that metasurfaces have excellent potential for artificial controllable photothermoelectric photoresponse of various semimetallic materials.
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Affiliation(s)
- Zhaohang Xue
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zipu Fan
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xin Liao
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yaolong Li
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yulu Qin
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Guanyu Zhang
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Xiaoming Song
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Dong Sun
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guowei Lu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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6
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Chen M, Wang Y, Zhao Z. Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity. ACS Nano 2022; 16:17263-17273. [PMID: 36129770 DOI: 10.1021/acsnano.2c07968] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.
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Affiliation(s)
- Meng Chen
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ziran Zhao
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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7
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Guo X, Lu X, Jiang P, Bao X. SrTiO 3 /CuNi-Heterostructure-Based Thermopile for Sensitive Human Radiation Detection and Noncontact Human-Machine Interaction. Adv Mater 2022; 34:e2204355. [PMID: 35817476 DOI: 10.1002/adma.202204355] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Noncontact interactive technology provides an intelligent solution to mitigate public health risks from cross-infection in the era of COVID-19. The utilization of human radiation as a stimulus source is conducive to the implementation of low-power, robust noncontact human-machine interaction. However, the low radiation intensity emitted by humans puts forward a high demand for photodetection performance. Here, a SrTiO3-x /CuNi-heterostructure-based thermopile is constructed, which features the combination of high thermoelectric performance and near-unity long-wave infrared absorption, to realize the self-powered detection of human radiation. The response level of this thermopile to human radiation is orders of magnitude higher than those of low-dimensional-materials-based photothermoelectric detectors and even commercial thermopiles. Furthermore, a touchless input device based on the thermopile array is developed, which can recognize hand gestures, numbers, and letters in real-time. This work offers a reliable strategy to integrate the spontaneous human radiation into noncontact human-machine interaction systems.
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Affiliation(s)
- Xiaohan Guo
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaowei Lu
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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8
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Liu Y, Hu Q, Cao Y, Wang P, Wei J, Wu W, Wang J, Huang F, Sun JL. High-Performance Ultrabroadband Photodetector Based on Photothermoelectric Effect. ACS Appl Mater Interfaces 2022; 14:29077-29086. [PMID: 35696679 DOI: 10.1021/acsami.2c03925] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultrabroadband photodetectors (PDs) working in the frequency range from the UV to THz regions of the spectrum play a crucial role in integrated multifunction photoelectric detection. Even so, a shortage of high-performance PDs has seriously restricted the overall development of this field. The present work demonstrates a high-performance, ultrabroadband PD with a composite nanostructure comprising a suspended carbon nanotube (CNT) film on which titanium and palladium are deposited. The application of titanium and palladium to the CNT film in this device provides n-doping and p-doping, respectively, and the deposited metal nanoparticles also ensure enhanced thermal localization. This device exhibits short response time, high responsivity, large linear dynamic range, and small noise equivalent power over the ultrabroadband spectrum based on a strong photothermoelectric effect. Numerical simulation results also confirm the effective doping and enhanced thermal localization in this PD resulting from the deposited metals. A theoretical analysis shows that the thermal conductivity of the composite film is no longer independent of the temperature over a wide temperature range. This work provides a simple but novel strategy for the design of high-performance ultrabroadband PDs.
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Affiliation(s)
- Yu Liu
- College of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China
| | - Qianqian Hu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yang Cao
- School of Instrumentation Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
| | - Pengfei Wang
- College of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China
| | - Jinquan Wei
- Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Weidong Wu
- Key Laboratory of Particle and Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Jian Wang
- Institute of Optical Information, Key Lab of Education Ministry on Luminescence and Optical Information Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Feng Huang
- College of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China
| | - Jia-Lin Sun
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
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9
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Vangelidis I, Bellas DV, Suckow S, Dabos G, Castilla S, Koppens FHL, Ferrari AC, Pleros N, Lidorikis E. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors. ACS Photonics 2022; 9:1992-2007. [PMID: 35726242 PMCID: PMC9204831 DOI: 10.1021/acsphotonics.2c00100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Indexed: 05/10/2023]
Abstract
Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs-1) light detection at low (<pJbit-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.
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Affiliation(s)
- Ioannis Vangelidis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
| | - Dimitris V. Bellas
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Strasse 25, Aachen 52074, Germany
| | - George Dabos
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Sebastián Castilla
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Frank H. L. Koppens
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA
- Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Nikos Pleros
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Elefterios Lidorikis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- University
Research Center of Ioannina (URCI), Institute of Materials Science
and Computing, Ioannina 45110, Greece
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10
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Dai M, Wang C, Ye M, Zhu S, Han S, Sun F, Chen W, Jin Y, Chua Y, Wang QJ. High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts. ACS Nano 2022; 16:295-305. [PMID: 35014251 DOI: 10.1021/acsnano.1c06286] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Long-wavelength infrared (LWIR) photodetection is important for heat-seeking technologies, such as thermal imaging, all-weather surveillance, and missile guidance. Among various detection techniques, photothermoelectric (PTE) detectors are promising in that they can realize ultra-broadband photodetection at room temperature without an external power supply. However, their performance in terms of speed, responsivity, and noise level in the LWIR regime still needs further improvement. Here, we demonstrated a high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts. The temperature gradient induced by asymmetric van der Waals contacts even under global illumination drives carrier diffusion to produce a photovoltage via the PTE effect. A responsivity of over 13 V/W, a response time of ∼50 μs, and a noise equivalent power of less than 7 nW/Hz1/2 are obtained in the 4.6-10.5 μm regime at room temperature. Furthermore, due to the anisotropic absorption of PdSe2, the detector exhibits a linear polarization angle sensitive response with an anisotropy ratio of 2.06 at 4.6 μm and 1.21 at 10.5 μm, respectively. Our proposed device architecture provides an alternative strategy to design high-performance photodetectors in the LWIR regime by utilizing van der Waals layered materials.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yunda Chua
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Centre for Disruptive Photonic Technologies, Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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11
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Liu J, Li X, Jiang R, Yang K, Zhao J, Khan SA, He J, Liu P, Zhu J, Zeng B. Recent Progress in the Development of Graphene Detector for Terahertz Detection. Sensors (Basel) 2021; 21:4987. [PMID: 34372224 PMCID: PMC8347591 DOI: 10.3390/s21154987] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 07/17/2021] [Accepted: 07/19/2021] [Indexed: 11/17/2022]
Abstract
Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.
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Affiliation(s)
- Jianlong Liu
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Xin Li
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Ruirui Jiang
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Kaiqiang Yang
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Jing Zhao
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Sayed Ali Khan
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China;
| | - Jiancheng He
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Peizhong Liu
- Department of the Internet of Things Engineering, College of Engineering, Huaqiao University, Quanzhou 362000, China;
| | - Jinfeng Zhu
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China;
| | - Baoqing Zeng
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
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12
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Abbasi M, Evans CI, Chen L, Natelson D. Single Metal Photodetectors Using Plasmonically-Active Asymmetric Gold Nanostructures. ACS Nano 2020; 14:17535-17542. [PMID: 33270432 DOI: 10.1021/acsnano.0c08035] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Plasmonic-based photodetectors are receiving increased attention because simple structural changes can make the photodetectors spectrally sensitive. In this study, asymmetric gold nanostructures are used as simple structures for photodetection via the photothermoelectric response. These single metal photodetectors use localized optical absorption from plasmon resonances of gold nanowires at desired wavelengths to generate temperature gradients. Combined with a geometry-dependent Seebeck coefficient, the result is a net electrical signal when the whole geometry is illuminated, with spectral sensitivity and polarization dependence from the plasmon resonances. We show experimental results and simulations of single-wavelength photodetectors at two wavelengths in the near IR range: 785 and 1060 nm. Based on simulation results and a model for the geometry-dependent Seebeck response, we demonstrate a photodetector structure that generates polarization-sensitive responses of opposite signs for the two wavelengths. The experimental photothermoelectric results are combined with simulations to infer the geometry dependence of the Seebeck response. These results can be used to increase the responsivity of these photodetectors further.
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Affiliation(s)
- Mahdiyeh Abbasi
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
| | - Charlotte I Evans
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Liyang Chen
- Applied Physics Graduate Program, Rice University, Houston, Texas 77005, United States
| | - Douglas Natelson
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
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13
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Mišeikis V, Marconi S, Giambra MA, Montanaro A, Martini L, Fabbri F, Pezzini S, Piccinini G, Forti S, Terrés B, Goykhman I, Hamidouche L, Legagneux P, Sorianello V, Ferrari AC, Koppens FHL, Romagnoli M, Coletti C. Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides. ACS Nano 2020; 14:11190-11204. [PMID: 32790351 PMCID: PMC7513472 DOI: 10.1021/acsnano.0c02738] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
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Affiliation(s)
- Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Simone Marconi
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Marco A. Giambra
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Giulia Piccinini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Bernat Terrés
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
| | - Ilya Goykhman
- Technion
- Israel Institute of Technology, Technion City, 3200003 Haifa, Israel
| | - Louiza Hamidouche
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Pierre Legagneux
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Vito Sorianello
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, Cambridge University, 9 J.J. Thompson Avenue, Cambridge CB3 OFA, United Kingdom
| | - Frank H. L. Koppens
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
- ICREA,
Institució Catalana de Recerça i Estudis Avancats, Barcelona 08010, Spain
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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14
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Chen M, Wang Y, Ma W, Huang Y, Zhao Z. Ionic Liquid Gating Enhanced Photothermoelectric Conversion in Three-Dimensional Microporous Graphene. ACS Appl Mater Interfaces 2020; 12:28510-28519. [PMID: 32453945 DOI: 10.1021/acsami.0c05833] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The photothermoelectric (PTE) effect can effectively convert light into electricity through photothermal and thermoelectric processes and has great potential applications in light energy harvesting and bandgap-independent photodetection. It is particularly applicable for the terahertz (THz) range featuring low photon energy but has not been well established due to lack of high-performance PTE materials in this range. Three-dimensional microporous graphene (3DMG) foam possesses ultrahigh THz absorptivity and outstanding photothermal conversion and can serve as a promising candidate. Here, enhancement of the THz PTE response of 3DMG foam by fine-tuning its thermoelectric properties using the ionic liquid electric double layer (EDL) technique was demonstrated. Continuous and reversible control of the Seebeck coefficient of 3DMG highlights the effectiveness of EDL gating in manipulating the electronic structures of such bulk and porous material. An approximate 1 order of magnitude enhancement in the Seebeck coefficient as well as the PTE responsivity was observed. In addition, a double-cell 3DMG EDL device with a p-n junction like channel configuration enabled further improvement of the photoresponse. This work opens a new avenue to optimize the PTE performance of 2D nanosheet-assembled 3D porous materials for highly efficient energy harvesting and detection of THz radiation.
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Affiliation(s)
- Meng Chen
- National Engineering Laboratory for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- National Engineering Laboratory for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Wenle Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin 300071, China
| | - Ziran Zhao
- National Engineering Laboratory for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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15
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Sunku SS, McLeod AS, Stauber T, Yoo H, Halbertal D, Ni G, Sternbach A, Jiang BY, Taniguchi T, Watanabe K, Kim P, Fogler MM, Basov DN. Nano-photocurrent Mapping of Local Electronic Structure in Twisted Bilayer Graphene. Nano Lett 2020; 20:2958-2964. [PMID: 32052976 DOI: 10.1021/acs.nanolett.9b04637] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photothermoelectric effect. Consistent with the photocurrent study, infrared nanoimaging experiments reveal optical conductivity features dominated by twist-angle-dependent interband transitions. Our results provide a fast and robust method for mapping the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of Moiré superlattices in other van der Waals heterostructures.
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Affiliation(s)
- Sai S Sunku
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027-6902, United States
| | - Alexander S McLeod
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
| | - Tobias Stauber
- Departamento de Teoría y Simulación de Materiales, Instituto de Ciencia de Materiales de Madrid, CSIC, Madrid 28049, Spain
| | - Hyobin Yoo
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Dorri Halbertal
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
| | - Guangxin Ni
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
| | - Aaron Sternbach
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
| | - Bor-Yuan Jiang
- Department of Physics, UC San Diego, La Jolla, California 92093, United States
| | | | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Michael M Fogler
- Department of Physics, UC San Diego, La Jolla, California 92093, United States
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027-6902, United States
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16
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Wu W, Wang Y, Niu Y, Wang P, Chen M, Sun J, Wang N, Wu D, Zhao Z. Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-One-Dimensional Flexible NbS 3 Photodetector. ACS Appl Mater Interfaces 2020; 12:14165-14173. [PMID: 32119514 DOI: 10.1021/acsami.0c00764] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ultra-broadband photodetection is crucial for various applications like imaging and sensing and has become a hot research topic in recent years. However, most of the reported ultra-broadband photodetectors can only cover the range from ultraviolet to infrared, which is insufficient. Herein, a photothermoelectric (PTE) detector made of NbS3 is reported. The device shows a considerable performance from ultraviolet to terahertz. For all examined wavelengths, the photoresponsivities are all larger than 1 V W-1 while the response time is less than 10 ms, much shorter than the reported ultra-broadband photodetectors made of millimetric scale graphene, ternary chalcogenide single crystal, and other materials. The extraordinary performance is fully discussed and can be attributed to the thermal localization enhanced PTE effect. Because of the short thermal decay length and low thermal loss, the heat generated by the illumination is localized in only a micrometer scale along the channel, and thus a strong PTE response is produced. In addition, the fabricated device also demonstrates robust flexibility and stability. Thanks to the quasi-one-dimensional (quasi-1D) structure, the NbS3 crystal is easy to be scaled down and thus intrinsically facilitate the integration of detectors. With these favorable merits, the quasi-1D NbS3 crystal holds a promising potential in high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Weidong Wu
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingying Niu
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Pengfei Wang
- Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Meng Chen
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Jialin Sun
- Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Nanlin Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Dong Wu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ziran Zhao
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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17
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Guo W, Dong Z, Xu Y, Liu C, Wei D, Zhang L, Shi X, Guo C, Xu H, Chen G, Wang L, Zhang K, Chen X, Lu W. Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices. Adv Sci (Weinh) 2020; 7:1902699. [PMID: 32154074 PMCID: PMC7055554 DOI: 10.1002/advs.201902699] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2019] [Revised: 11/28/2019] [Indexed: 05/29/2023]
Abstract
Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is proposed to overcome these limitations by exploring the photothermoelectric (PTE) effect in an ultrashort (down to 30 nm) channel with black phosphorus as a photoactive material. The preferential flow of hot carriers is enabled by the asymmetric Cr/Au and Ti/Au metallization with the titled-angle evaporation technique. Most intriguingly, orders of magnitude field-enhancement beyond the skin-depth limit and photon absorption across a broadband frequency can be achieved. The PTE detector has excellent sensitivity of 297 V W-1, noise equivalent power less than 58 pW/Hz0.5, and response time below 0.8 ms, which is superior to other thermal-based detectors at room temperature. A rigorous comparison with existing THz detectors, together with verification by further optical-pumping and imaging experiments, substantiates the importance of the localized field effect in the skin-depth limit. The results allow solid understanding on the role of PTE effect played in the THz photoresponse, opening up new opportunities for developing highly sensitive THz detectors for addressing targeted applications.
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Affiliation(s)
- Wanlong Guo
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Zhuo Dong
- CAS Key Laboratory of Nano‐Bio Interface and Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
- School of Nano Technology and Nano BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026China
| | - Yijun Xu
- CAS Key Laboratory of Nano‐Bio Interface and Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
| | - Changlong Liu
- Zhejiang LabArtificial Intelligence TownNo.1818 Wenyixi RoadHangzhou311100China
| | - Dacheng Wei
- Institute of Molecular Materials and DevicesDepartment of Material Sciences and Department of Macromolecular SciencesFudan UniversityShanghai200433China
| | - Libo Zhang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Xinyao Shi
- CAS Key Laboratory of Nano‐Bio Interface and Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
| | - Cheng Guo
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
| | - Huang Xu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
| | - Gang Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
| | - Lin Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
| | - Kai Zhang
- CAS Key Laboratory of Nano‐Bio Interface and Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Wei Lu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐Tian RoadShanghai200083China
- University of Chinese Academy of SciencesNo. 19A Yuquan RoadBeijing100049China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
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18
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Lu X, Sun L, Jiang P, Bao X. Progress of Photodetectors Based on the Photothermoelectric Effect. Adv Mater 2019; 31:e1902044. [PMID: 31483546 DOI: 10.1002/adma.201902044] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2019] [Revised: 07/06/2019] [Indexed: 06/10/2023]
Abstract
High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.
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Affiliation(s)
- Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Lin Sun
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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19
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Muench JE, Ruocco A, Giambra MA, Miseikis V, Zhang D, Wang J, Watson HFY, Park GC, Akhavan S, Sorianello V, Midrio M, Tomadin A, Coletti C, Romagnoli M, Ferrari AC, Goykhman I. Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors. Nano Lett 2019; 19:7632-7644. [PMID: 31536362 DOI: 10.1021/acs.nanolett.9b02238] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.
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Affiliation(s)
- Jakob E Muench
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Alfonso Ruocco
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Marco A Giambra
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Vaidotas Miseikis
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
- Center for Nanotechnology Innovation @ NEST , Istituto Italiano di Tecnologia , 56127 Pisa , Italy
- Graphene Labs , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Dengke Zhang
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Junjia Wang
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Hannah F Y Watson
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Gyeong C Park
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Shahab Akhavan
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Vito Sorianello
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Michele Midrio
- Consorzio Nazionale per le Telecomunicazioni , University of Udine , 33100 Udine , Italy
| | - Andrea Tomadin
- Dipartimento di Fisica , Università di Pisa , Largo Bruno Pontecorvo 3 , 56127 Pisa , Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @ NEST , Istituto Italiano di Tecnologia , 56127 Pisa , Italy
- Graphene Labs , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Marco Romagnoli
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Ilya Goykhman
- Micro Nanoelectronics Research Center , Technion , Haifa 320000 , Israel
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20
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Onodera M, Arai M, Masubuchi S, Kinoshita K, Moriya R, Watanabe K, Taniguchi T, Machida T. Electrical Control of Cyclotron Resonance in Dual-Gated Trilayer Graphene. Nano Lett 2019; 19:8097-8102. [PMID: 31658419 DOI: 10.1021/acs.nanolett.9b03280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Landau levels (LLs) of ABA-stacked trilayer graphene (TLG) are described as the combination of monolayer graphene-like LLs and bilayer graphene-like LLs. They are extremely sensitive to the applied perpendicular electric displacement field D. Here, we demonstrate the electrical control of cyclotron resonance (CR) in a dual-gated ABA-stacked TLG. Under the irradiation of mid-infrared light, we observed the photovoltage induced by the CR absorption through the photothermoelectric effect. The resonant magnetic field in CR is changed by applying D while keeping the carrier density constant. Numerical simulations based on the tight-binding model complement the experimental observations. We believe that the present study provides a boost to graphene-based photodetectors and photoemitters with an electrically tunable wavelength in mid-infrared to terahertz spectral ranges.
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Affiliation(s)
- Momoko Onodera
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Miho Arai
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Satoru Masubuchi
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kei Kinoshita
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Rai Moriya
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan
| | - Tomoki Machida
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro , Tokyo 153-8505 , Japan
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21
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Dai W, Liang Y, Yang M, Schrecongost D, Gajurel P, Lee H, Lee JW, Chen J, Eom CB, Cen C. Large and Reconfigurable Infrared Photothermoelectric Effect at Oxide Interfaces. Nano Lett 2019; 19:7149-7154. [PMID: 31525937 DOI: 10.1021/acs.nanolett.9b02712] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
To maximize the photovoltaic efficiency, it is highly desirable to enable the electricity conversion from low energy photons and to extract the excessive energy from hot carriers. Here we report a large photovoltage generation at the LaAlO3/SrTiO3 interfaces from infrared photons with energies far below the oxide bandgaps. This effect is a result of the photoexcitation of hot carriers in metasurface electrical contacts and the subsequent thermoelectric charge separations by the interfacial two-dimensional electron gas (2DEG). Reaching a room-temperature responsivity of 4.4 V/W, such light-to-charge conversion can be spatially controlled and reconfigured through the patterning of 2DEG using conducting atomic force microscope. Compatible for broadband applications, our results demonstrate a new path toward efficient and programmable light sensing using oxide-based low-dimensional electron systems.
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Affiliation(s)
- Weitao Dai
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Yi Liang
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
- Guangxi Key Lab for Relativistic Astrophysics, Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University, Nanning , Guangxi 530004 , China
| | - Ming Yang
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Dustin Schrecongost
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Prakash Gajurel
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
| | - Hyungwoo Lee
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Jung-Woo Lee
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Jun Chen
- Department of Electrical and Computer Engineering and Peterson Institute of NanoScience and Engineering , University of Pittsburgh , Pittsburgh , Pennsylvania 15261 , United States
| | - Chang-Beom Eom
- Department of Material Science and Engineering , University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Cheng Cen
- Department of Physics and Astronomy , West Virginia University , Morgantown , West Virginia 26506 , United States
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22
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Wang Q, Yesilyurt C, Liu F, Siu ZB, Cai K, Kumar D, Liu Z, Jalil MBA, Yang H. Anomalous Photothermoelectric Transport Due to Anisotropic Energy Dispersion in WTe 2. Nano Lett 2019; 19:2647-2652. [PMID: 30859825 DOI: 10.1021/acs.nanolett.9b00513] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Band structures are vital in determining the electronic properties of materials. Recently, the two-dimensional (2D) semimetallic transition metal tellurides (WTe2 and MoTe2) have sparked broad research interest because of their elliptical or open Fermi surface, making distinct from the conventional 2D materials. In this study, we demonstrate a centrosymmetric photothermoelectric voltage distribution in WTe2 nanoflakes, which has not been observed in common 2D materials such as graphene and MoS2. Our theoretical model shows the anomalous photothermoelectric effect arises from an anisotropic energy dispersion and micrometer-scale hot carrier diffusion length of WTe2. Further, our results are more consistent with the anisotropic tilt direction of energy dispersion being aligned to the b-axis rather than the a-axis of the WTe2 crystal, which is consistent with the previous first-principle calculations as well as magneto-transport experiments. Our work shows the photothermoelectric current is strongly confined to the anisotropic direction of the energy dispersion in WTe2, which opens an avenue for interesting electro-optic applications such as electron beam collimation and electron lenses.
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Affiliation(s)
- Qisheng Wang
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Can Yesilyurt
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Fucai Liu
- Center for Programmable Materials, School of Electrical and Electronic Engineering , Nanyang Technology University , 639798 , Singapore
| | - Zhuo Bin Siu
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Kaiming Cai
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Dushyant Kumar
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Zheng Liu
- Center for Programmable Materials, School of Electrical and Electronic Engineering , Nanyang Technology University , 639798 , Singapore
| | - Mansoor B A Jalil
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 , Singapore
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23
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Chen M, Wang Y, Wen J, Chen H, Ma W, Fan F, Huang Y, Zhao Z. Annealing Temperature-Dependent Terahertz Thermal-Electrical Conversion Characteristics of Three-Dimensional Microporous Graphene. ACS Appl Mater Interfaces 2019; 11:6411-6420. [PMID: 30648383 DOI: 10.1021/acsami.8b20095] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Three-dimensional microporous graphene (3DMG) possesses ultrahigh photon absorptivity and excellent photothermal conversion ability and shows great potential in energy storage and photodetection, especially for the not well-explored terahertz (THz) frequency range. Here, we report on the characterization of the THz thermal-electrical conversion properties of 3DMG with different annealing treatments. We observe distinct behavior of bolometric and photothermoelectric responses varying with annealing temperature. Resistance-temperature characteristics and thermoelectric power measurements reveal that marked charge carrier reversal occurs in 3DMG as the annealing temperature changes between 600 and 800 °C, which can be well explained by Fermi-level tuning associated with oxygen functional group evolution. Benefiting from the large specific surface area of 3DMG, it has an extraordinary capability of reaching thermal equilibrium quickly and exhibits a fast photothermal conversion with a time constant of 23 ms. In addition, 3DMG can serve as an ideal absorber to improve the sensitivity of THz detectors and we demonstrate that the responsivity of a carbon nanotube device could be enhanced by 12 times through 3DMG. Our work provides new insight into the physical characteristics of carrier transport and THz thermal-electrical conversion in 3DMG controlled by annealing temperature and opens an avenue for the development of highly efficient graphene-based THz devices.
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Affiliation(s)
- Meng Chen
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
| | - Yingxin Wang
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
| | - Jianguo Wen
- Nuctech Company Limited , Beijing 100084 , China
| | | | | | | | | | - Ziran Zhao
- Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics , Tsinghua University , Beijing 100084 , China
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24
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Wang Q, Li CZ, Ge S, Li JG, Lu W, Lai J, Liu X, Ma J, Yu DP, Liao ZM, Sun D. Ultrafast Broadband Photodetectors Based on Three-Dimensional Dirac Semimetal Cd 3As 2. Nano Lett 2017; 17:834-841. [PMID: 28099030 DOI: 10.1021/acs.nanolett.6b04084] [Citation(s) in RCA: 60] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Photodetection with extreme performances in terms of ultrafast response time, broad detection wavelength range, and high sensitivity has a wide range of optoelectronic and photonic applications, such as optical communications, interconnects, imaging, and remote sensing. Graphene, a typical two-dimensional Dirac semimetal, has shown excellent potential toward a high-performance photodetector with high operation speed, broadband response, and efficient carrier multiplications benefiting from its linear dispersion band structure with a high carrier mobility and zero bandgap. As the three-dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as a bulk material and thus enhanced responsivity. In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with a response time of about 6.9 ps without any special device optimization. Broadband responses from 532 nm to 10.6 μm are achieved with a potential detection range extendable to far-infrared and terahertz. Systematical studies indicate that the photothermoelectric effect plays an important role in photocurrent generation. Our results suggest this emerging class of exotic quantum materials can be harnessed for photodetection with a high sensitivity and high speed (∼145 GHz) over a broad wavelength range.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Da-Peng Yu
- Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China
| | - Zhi-Min Liao
- Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China
| | - Dong Sun
- Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China
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25
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Jung M, Rickhaus P, Zihlmann S, Makk P, Schönenberger C. Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p-n Junction. Nano Lett 2016; 16:6988-6993. [PMID: 27704863 DOI: 10.1021/acs.nanolett.6b03078] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene p-n junctions in the frequency range of 1-5 GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the p-n regime, while there is almost no signal for unipolar doping in either the n-n or p-p regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state. This is different to previous results where optical radiation was used. We propose a new mechanism based on the phototermal effect explaining the large signal. It requires contact doping and a distinctly different transport mechanism on both sides: one side of graphene is ballistic and the other diffusive. By engineering partially diffusive and partially ballistic devices, the photocurrent can drastically be enhanced.
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Affiliation(s)
- Minkyung Jung
- Department of Physics, University of Basel , Klingelbergstrasse 82, CH-4056 Basel, Switzerland
- Division of Nano-Energy, DGIST , 333 Techno Jungang-Daero, Hyeongpung, Daegu, Korea 42988
| | | | - Simon Zihlmann
- Department of Physics, University of Basel , Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Peter Makk
- Department of Physics, University of Basel , Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Christian Schönenberger
- Department of Physics, University of Basel , Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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26
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Schuler S, Schall D, Neumaier D, Dobusch L, Bethge O, Schwarz B, Krall M, Mueller T. Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector. Nano Lett 2016; 16:7107-7112. [PMID: 27715060 DOI: 10.1021/acs.nanolett.6b03374] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene p-n junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device. While at zero bias the photothermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.
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Affiliation(s)
- Simone Schuler
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Daniel Schall
- AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany
| | | | - Lukas Dobusch
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Ole Bethge
- Institute of Solid State Electronics, Vienna University of Technology , Floragasse 7, 1040 Vienna, Austria
| | - Benedikt Schwarz
- Institute of Solid State Electronics, Vienna University of Technology , Floragasse 7, 1040 Vienna, Austria
| | - Michael Krall
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
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27
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Hong T, Chamlagain B, Hu S, Weiss SM, Zhou Z, Xu YQ. Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions. ACS Nano 2015; 9:5357-5363. [PMID: 25871507 DOI: 10.1021/acsnano.5b01065] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We investigate the wavelength- and polarization-dependence of photocurrent signals generated at few-layer MoS2-metal junctions through spatially resolved photocurrent measurements. When incident photon energy is above the direct bandgap of few-layer MoS2, the maximum photocurrent response occurs for the light polarization direction parallel to the metal electrode edge, which can be attributed to photovoltaic effects. In contrast, if incident photon energy is below the direct bandgap of MoS2, the photocurrent response is maximized when the incident light is polarized in the direction perpendicular to the electrode edge, indicating different photocurrent generation mechanisms. Further studies show that this polarized photocurrent response can be interpreted in terms of the polarized absorption of light by the plasmonic metal electrode, its conversion into hot electron-hole pairs, and subsequent injection into MoS2. These fundamental studies shed light on the knowledge of photocurrent generation mechanisms in metal-semiconductor junctions, opening the door for engineering future two-dimensional materials based optoelectronics through surface plasmon resonances.
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Affiliation(s)
- Tu Hong
- †Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37212, United States
| | - Bhim Chamlagain
- ‡Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States
| | - Shuren Hu
- §Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37212, United States
| | - Sharon M Weiss
- †Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37212, United States
- §Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37212, United States
| | - Zhixian Zhou
- ‡Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States
| | - Ya-Qiong Xu
- †Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37212, United States
- §Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37212, United States
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28
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Huang D, Zou Y, Jiao F, Zhang F, Zang Y, Di CA, Xu W, Zhu D. Interface-Located Photothermoelectric Effect of Organic Thermoelectric Materials in Enabling NIR Detection. ACS Appl Mater Interfaces 2015; 7:8968-8973. [PMID: 25875974 DOI: 10.1021/acsami.5b01460] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Organic photothermoelectric (PTE) materials are promising candidates for various photodetection applications. Herein, we report on poly[Cux(Cu-ett)]:PVDF, which is an excellent polymeric thermoelectric composite, possesses unprecedented PTE properties. The NIR light irradiation on the poly[Cu(x)(Cu-ett)]:PVDF film could induce obvious enhancement in Seebeck coefficient from 52 ± 1.5 to 79 ± 5.0 μV/K. By taking advantage of prominent photothermoelectric effect of poly[Cu(x)(Cu-ett)]:PVDF, an unprecedented voltage of 12 mV was obtained. This excellent performance enables its promising applications in electricity generation from solar energy and NIR detection to a wide range of light intensities ranging from 1.7 mW/cm(2) to 17 W/cm(2).
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Affiliation(s)
- Dazhen Huang
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- ‡University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ye Zou
- ‡University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fei Jiao
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- ‡University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fengjiao Zhang
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- ‡University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yaping Zang
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
- ‡University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Chong-an Di
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Wei Xu
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Daoben Zhu
- †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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