Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration

Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype

Electrical interconnects are becoming a bottleneck in the way towards meeting future performance requirements of integrated circuits. Moore’s law, which observes the doubling of the number of transistors in integrated circuits every couple of years, can no longer be maintained due to reaching a physical barrier for scaling down the transistor’s size lower than 5 nm. Heading towards multi-core and many-core chips, to mitigate such a barrier and maintain Moore’s law in the future, is the solution being pursued today. However, such distributed nature requires a large interconnect network that is found to consume more than 80% of the microprocessor power. Optical interconnects represent one of the viable future alternatives that can resolve many of the challenges faced by electrical interconnects. However, reaching a maturity level in optical interconnects that would allow for the transition from electrical to optical interconnects for intra-chip and inter-chip communication is still facing several challenges. A review study is required to compare the recent developments in the optical interconnects with the performance requirements needed to reach the required maturity level for the transition to happen. This review paper dissects the optical interconnect system into its components and explains the foundational concepts behind the various passive and active components along with the performance metrics. The performance of different types of on-chip lasers, grating and edge couplers, modulators, and photodetectors are compared. The potential of a slot waveguide is investigated as a new foundation since it allows for guiding and confining light into low index regions of a few tens of nanometers in cross-section. Additionally, it can be tuned to optimize transmissions over 90° bends. Hence, high-density opto-electronic integrated circuits with optical interconnects reaching the dimensions of their electrical counterparts are becoming a possibility. The latest complete optical interconnect systems realized so far are reviewed as well.

Silicon-Based Optoelectronics Enhanced by Hybrid Plasmon Polaritons: Bridging Dielectric Photonics and Nanoplasmonics

Silicon-based optoelectronics large-scale integrated circuits have been of interest to the world in recent decades due to the need for higher complexity, larger link capacity, and lower cost. Surface plasmons are electromagnetic waves that propagate along the interface between a conductor and a dielectric, which can be confined several orders smaller than the wavelength in a vacuum and offers the potential for minimizing photonic circuits to the nanoscale. However, plasmonic waveguides are usually accompanied by substantial propagation loss because metals always exhibit significant resistive heating losses when interacting with light. Therefore, it is better to couple silicon-based optoelectronics and plasmonics and bridge the gap between micro-photonics and nanodevices, especially some nano-electronic devices. In this review, we discuss methods to enhance silicon-based optoelectronics by hybrid plasmon polaritons and summarize some recently reported designs. It is believed that by utilizing the strong light confinement of plasmonics, we can overcome the conventional diffraction limit of light and further improve the integration of optoelectronic circuits.

Highly confined dielectric guiding mode in nanoridges embedded in a conventional slot waveguide

Plasmonic waveguides can offer a promising solution beyond the optical diffraction limit. However, the cost of shrinking mode sizes reflects in metallic ohmic losses that lead to a short propagation distance of light, hindering the practical applications of plasmonic waveguides. Herein, we tackled the practicality of a novel CMOS-compatible all-dielectric waveguide structure that exploits electromagnetic boundary conditions of both the continuous normal component of the electric displacement field and the tangential component of the electric field at a high-index-contrast interface, which allows the attainment of mode areas comparable with those of plasmonic waveguides and theoretical lossless. The proposed waveguide comprises two oppositely contacted nanoridges with semicircular tops embedded in a conventional slot waveguide. By stepping on the strong electric field in the low-index slot region of the slot waveguides, the nanoridges squeeze the mode areas further with a guiding mechanism identical to that of a surrounding slot waveguide. Through the design of the geometry parameters, the calculated mode area of the reported structure achieved an unprecedented order of 4.21 × 10^-5A₀, where A₀ is the diffraction-limited area. The mode area dependence on fabrication imperfections and spectral response showed the robustness and broadband operation. Moreover, on the basis of extremely tight mode confinements, the present waveguide even outperformed the hybrid plasmonic waveguides in lower crosstalk. The proposed idea makes the realization of practically feasible nanoscale photonic integrated circuits without any obstructions by the limited propagation distance of light for plasmonic waveguides, thereby expanding its applications in various nanophotonic and optoelectronics devices requiring strong light-matter interaction within nanoscale regions.

Efficient unidirectional and broadband vertical-emitting optical coupler assisted by aperture-coupled nanopatch antenna array

Vertical-emitting optical couplers that convert in-plane guided light to out-of-plane emission are crucial elements for future photonic integrated circuits. However, traditional vertical-coupling elements, such as grating couplers, by default radiate light in both upward and downward directions, leading to a significant reduction of device efficiency. In this paper, we propose to solve this problem using a novel nanopatch antenna array, inspired by patch antenna theories commonly deployed in microwave circuits. The proposed nanopatch array features an up-to-down emission directionality up to 12.91 dBc and a wide operating bandwidth of over 400 nm simultaneously. Compared with a typical waveguide grating antenna, our design shows a significantly higher free-space gain of 24.27 dBi. The unidirectional, efficient, and broadband antenna arrays presented here are promising for a range of integrated photonics applications, including inter-chip photonic interconnects, light ranging and detection, optical communications, and biological imaging.

Tunable hybridization of graphene plasmons and dielectric modes for highly confined light transmit at terahertz wavelength

We theoretically report a novel graphene-based hybrid plasmonic waveguide (GHPW) by integrating a GaAs micro-tube on a silica spacer that is supported by a graphene-coated substrate. In comprehensive numerical simulations on guiding properties of the GHPW, it was found that the size of hybrid plasmonic mode (TM) can be reduced significantly to ~10^-4(λ²/4), in conjunction with long propagation distances up to tens of micrometers by tuning the the waveguide's key structure parameters and graphene's chemical potential. Moreover, crosstalk between two adjacent GHPWs that are placed on the same substrate has been analyzed and ultralow crosstalk can be realized. The proposed scheme potentially enables realization of the various high performance nanophotonic components-based subwavelength plasmonic waveguides in terahertz domain.

Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials

We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits.

Nanofocusing in SOI-based hybrid plasmonic metal slot waveguides

Through a process of efficient dielectric to metallic waveguide mode conversion, we calculate a >400-fold field intensity enhancement in a silicon photonics compatible nanofocusing device. A metallic slot waveguide sits on top of the silicon slab waveguide with nanofocusing being achieved by tapering the slot width gradually. We evaluate the conversion between the numerous photonic modes of the planar silicon waveguide slab and the most confined plasmonic mode of a 20 x 50 nm² slot in the metallic film. With an efficiency of ~80%, this system enables remarkably effective nanofocusing, although the small amount of inter-mode coupling shows that this structure is not quite adiabatic. In order to couple photonic and plasmonic modes efficiently, in-plane focusing is required, simulated here by curved input grating couplers. The nanofocusing device shows how to efficiently bridge the photonic micro-regime and the plasmonic nano-regime whilst maintaining compatibility with the silicon photonics platform.

Design and fabrication of hybrid SPP waveguides for ultrahigh-bandwidth low-penalty terabit-scale data transmission

Here we design and fabricate a hybrid surface plasmon polarities (SPP) waveguide on the silicon-on-insulator (SOI) photonics platform. The designed hybrid SPP waveguide is composed of a metal ridge, an air gap, and a silicon ridge. We simulate the mode characteristics in the structure and design the waveguide with a wide air gap that can simplify the fabrication process and maintain the advantages of the hybrid SPP mode. The performance of ultrahigh-bandwidth data transmission through the proposed waveguide is then investigated using 161 wavelength-division multiplexing (WDM) channels, each carrying a 11.2-Gbit/s orthogonal frequency-division multiplexing (OFDM) 16-ary quadrature amplitude modulation (16-QAM) signal. The bit-error rates (BERs) of all 161 channels are less than 1e-3. The favorable results show the prospect of on-chip optical interconnection using the proposed hybrid SPP waveguide.

Mid-infrared subwavelength modulator based on grating-assisted coupling of a hybrid plasmonic waveguide mode to a graphene plasmon

This work reports a mid-infrared modulator based on a hybrid plasmonic waveguide with graphene on a grating in its slot region. The modulator utilizes a graphene plasmon for electro-optic tuning in a more practical and effective way than graphene-plasmon-based waveguide devices studied up to now. The hybrid plasmonic waveguide can be easily and efficiently integrated with input and output photonic waveguides. It supports a hybrid plasmonic waveguide mode and a graphene-plasmon-based waveguide mode. Grating-assisted coupling of the former to the latter in it is demonstrated to work successfully even though the two modes have significantly different propagation constants and losses. Theoretical investigation of the modulator shows that the coupling via the grating of length 5.92 μm generates a deep rejection band at a wavelength of 8.014 μm in the transmission spectrum of the output photonic waveguide of the modulator. With the graphene chemical potential tuned between 0.6 eV and 0.65 eV, the transmission at the wavelength is modulated between -27 dB and -1.8 dB. The subwavelength modulator, which may have a large bandwidth and small energy consumption, is expected to play a key role in free-space communications and sensing requiring mid-infrared integrated photonics.

Highly efficient graphene-on-gap modulator by employing the hybrid plasmonic effect

We propose a highly efficient graphene-on-gap modulator (GOGM) by employing the hybrid plasmonic effect, whose modulation efficiency (up to 1.23 dB/μm after optimization) is ∼12-fold larger than that of the present graphene-on-silicon modulator (∼0.1  dB/μm). The proposed modulator has the advantage of a short modulation length of ∼3.6  μm, a relatively low insertion loss of ∼0.32  dB, and a larger modulation bandwidth of ∼0.48  THz. The physical insight is investigated, showing that both the slow light effect and the overlap between graphene and the mode field contribute. Moreover, an efficient taper coupler has been designed to convert the quasi-transverse electric mode of conventional silicon waveguide to the hybrid plasmonic mode of GOGM, with a high coupling efficiency of 91%. This Letter may promote the design of high-performance on-chip electro-optical modulators.

Analysis of plasmonic phase modulator with furan-thiophene chromatophore electro-optic polymer

We analyzed two types of Mach-Zehnder plasmonic modulators on a silicon-on-insulator platform with a different furan-thiophene chromophore electro-optic polymer to compare to other reports. The metal-taper coupling structure and the metal-insulator-metal cross section in our design have been optimized based on the new material parameters. According to the simulation result, a modulator with a slot width of 50 nm and an on-off voltage of Vπ=20  V can be 21 μm long, leading to a total modulator loss of 15 dB, which is comparable to previously reported devices.

An 8-Channel Wavelength MMI Demultiplexer in Slot Waveguide Structures

We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operate at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm, and 1565 nm. Gallium nitride (GaN) surrounded by silicon (Si) was found to be a suitable material for the slot-waveguide structures. The proposed device was designed by seven 1 × 2 MMI couplers, fourteen S-bands, and one input taper. Numerical investigations were carried out on the geometrical parameters using a full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530–1565 nm) with low crosstalk (−19.97–−13.77 dB) and bandwidth (1.8–3.6 nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology.

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).

Utilization of Field Enhancement in Plasmonic Waveguides for Subwavelength Light-Guiding, Polarization Handling, Heating, and Optical Sensing

Plasmonic nanostructures have attracted intensive attention for many applications in recent years because of the field enhancement at the metal/dielectric interface. First, this strong field enhancement makes it possible to break the diffraction limit and enable subwavelength optical waveguiding, which is desired for nanophotonic integrated circuits with ultra-high integration density. Second, the field enhancement in plasmonic nanostructures occurs only for the polarization mode whose electric field is perpendicular to the metal/dielectric interface, and thus the strong birefringence is beneficial for realizing ultra-small polarization-sensitive/selective devices, including polarization beam splitters, and polarizers. Third, plasmonic nanostructures provide an excellent platform of merging electronics and photonics for some applications, e.g., thermal tuning, photo-thermal detection, etc. Finally, the field enhancement at the metal/dielectric interface helps a lot to realize optical sensors with high sensitivity when introducing plasmonic nanostrutures. In this paper, we give a review for recent progresses on the utilization of field enhancement in plasmonic nanostructures for these applications, e.g., waveguiding, polarization handling, heating, as well as optical sensing.

Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration

An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2</ITO/Cu conformally deposited on a single-mode stripe waveguide to form a hybrid plasmonic waveguide (HPW). Since the thin ITO layer can behave as a semiconductor, the stack itself forms a MOS capacitor. A voltage is applied between the Cu and TiN layers to change the electron concentration of ITO (NITO), which in turn changes its permittivity as well as the propagation loss of HPW. For a HPW comprised of a Cu/3-nm-ITO/5-nm-HfO2/5-nm-TiN stack on a 400-nm × 340-nm-Si stripe waveguide, the propagation loss for the 1.55-μm TE (TM) mode increases from 1.6 (1.4) to 23.2 (23.9) dB/μm when the average NITO in the 3-nm ITO layer increases from 2 × 10(20) to 7 × 10(20) cm(-3), which is achieved by varying the voltage from -2 to 4 V if the initial NITO is 3.5 × 10(20) cm(-3). As a result, a 1-μm-long EA modulator inserted in the 400-nm × 340-nm-Si stripe waveguide exhibits insertion loss of 2.9 (3.2) dB and modulation depth of 19.9 (15.2) dB for the TE (TM) mode. The modulation speed is ~11 GHz, limited by the RC delay, and the energy consumption is ~0.4 pJ/bit. The stack can also be deposited on a low-index-contrast waveguide such as Si3N4. For example, a 4-μm-long EA modulator inserted in an 800-nm × 600-nm-Si3N4 stripe waveguide exhibits insertion loss of 6.3 (3.5) dB and modulation depth of 16.5 (15.8) dB for the TE (TM) mode. The influences of the ITO, TiN, HfO2 layers and the beneath dielectric core, as well as the processing tolerance, on the performance of the proposed EA modulator are systematically investigated.

Photonic-to-plasmonic mode converter

A novel photonic-to-plasmonic mode converter for efficiently converting a silicon strip waveguide mode to a gap surface plasmon polariton (SPP) of a metallic slot structure is proposed. A conversion efficiency of more than 85% is found for metallic slots with a slot size of 30-50 nm. Calculations show that high conversion efficiencies can be achieved for various cladding materials with refractive indices of 1.44, 1.6, and 1.7. The optical 1 dB bandwidth of the converter is around 200 nm. The proposed mode converter shows a good tolerance with respect to fabrication errors, and it requires a simple fabrication procedure only.

Synthesis and characterization of plasmonic resonant guided wave networks

Composed of optical waveguides and power-splitting waveguide junctions in a network layout, resonant guided wave networks (RGWNs) split an incident wave into partial waves that resonantly interact within the network. Resonant guided wave networks have been proposed as nanoscale distributed optical networks (Feigenbaum and Atwater, Phys. Rev. Lett. 2010, 104, 147402) that can function as resonators and color routers (Feigenbaum et al. Opt. Express 2010, 18, 25584-25595). Here we experimentally characterize a plasmonic resonant guided wave network by demonstrating that a 90° waveguide junction of two v-groove channel plasmon polariton (CPP) waveguides operates as a compact power-splitting element. Combining these plasmonic power splitters with CPP waveguides in a network layout, we characterize a prototype plasmonic nanocircuit composed of four v-groove waveguides in an evenly spaced 2 × 2 configuration, which functions as a simple, compact optical logic device at telecommunication wavelengths, routing different wavelengths to separate transmission ports due to the resulting network resonances. The resonant guided wave network exhibits the full permutation of Boolean on/off values at two output ports and can be extended to an eight-port configuration, unlike other photonic crystal and plasmonic add/drop filters, in which only two on/off states are accessible.

Low-loss light transport at the subwavelength scale in silicon nano-slot based symmetric hybrid plasmonic waveguiding schemes

A hybrid plasmonic structure comprising a silicon slot waveguide separated from an inverse metal ridge by a thin low-index insulator gap is proposed and investigated. Owing to its symmetric hybrid configuration containing closely spaced silicon rails near the metal ridge, the fundamental symmetric hybrid slot mode supported by the structure is demonstrated to be capable of simultaneously achieving low propagation loss and subwavelength field confinement within a wide range of physical dimensions at the telecom wavelength. Comprehensive numerical investigations regarding the effects of key geometric parameters on the guided modes' properties, including the slot sizes, the shape and dimension of the silicon rails, the width of the gap region as well as the height of metallic nanoridge, have been conducted. It is revealed that the propagation distance of the symmetric mode can be more than several millimeters (even up to the centimeter range), while simultaneously achieving a subwavelength mode size and tight field confinement inside the gap region. In addition to the studies on the modal characteristics, excitation strategies of the guided hybrid modes and the conversion between dielectric slot and hybrid slot modes are also numerically demonstrated. The studied platform potentially combines the advantages of silicon slot and plasmonic structures, which might lay important groundwork for future hybrid integrated photonic components and circuits.

Silicon nitride based plasmonic components for CMOS back-end-of-line integration

Silicon nitride waveguides provide low propagation loss but weak mode confinement due to the relatively small refractive index contrast between the Si₃N₄ core and the SiO2 cladding. On the other hand, metal-insulator-metal (MIM) plasmonic waveguides offer strong mode confinement but large propagation loss. In this work, MIM-like plasmonic waveguides and passive devices based on horizontal Cu-Si₃N₄-Cu or Cu-SiO₂-Si₃N₄-SiO₂-Cu structures are integrated in the conventional Si₃N₄ waveguide circuits using standard CMOS backend processes, and are characterized around 1550-nm telecom wavelengths using the conventional fiber-waveguide-fiber method. The Cu-Si₃N₄(~100 nm)-Cu devices exhibit ~0.78-dB/μm propagation loss for straight waveguides, ~38% coupling efficiency with the conventional 1-μm-wide Si₃N₄ waveguide through a 2-μm-long taper coupler, ~0.2-dB bending loss for sharp 90° bends, and ~0.1-dB excess loss for ultracompact 1 × 2 and 1 × 4 power splitters. Inserting a ~10-nm SiO₂ layer between the Si3N4 core and the Cu cover (i.e., the Cu-SiO2(~10 nm)-Si₃N₄(~100 nm)-SiO2(~10 nm)-Cu devices), the propagation loss and the coupling efficiency are improved to ~0.37 dB/μm and ~52% while the bending loss and the excess loss are degraded to ~3.2 dB and ~2.1 dB, respectively. These experimental results are roughly consistent with the numerical simulation results after taking the influence of possible imperfect fabrication into account. Ultracompact plasmonic ring resonators with 1-μm radius are demonstrated with an extinction ratio of ~18 dB and a quality factor of ~84, close to the theoretical prediction.

Ultrafast all-optical modulation in a silicon nanoplasmonic resonator

Ultrafast all-optical modulation in silicon-based metal-insulator-semiconductor-insulator-metal nanoring resonators through photogeneration of free-carriers using two-photon absorption is presented 3-D through finite difference time domain simulations. In a compact device footprint of only 1.4 µm(2), a 13.1 dB modulation amplitude was obtained with a switching time of only 2 ps using a modest pump pulse energy of 16.0 pJ. The larger bandwidth associated with more compact nanorings is shown to result in increased modulation amplitude.

Low-loss hybrid plasmonic modes guided by metal-coated dielectric wedges for subwavelength light confinement

The optical characteristics of a metal-coated dielectric wedge structure are investigated at a wavelength of 1550 nm. The effects of the metal/gap layers' thicknesses, as well as the dimension of the dielectric wedge on the guided modes' properties, are systematically analyzed. It is revealed that the characteristics of the fundamental quasi-TE and quasi-TM plasmonic modes supported by the configuration demonstrate similar trends against the variation of the metal layer thickness while exhibiting quite different behaviors with the change of the wedge size. By choosing appropriate physical dimensions, both modes could simultaneously achieve low modal loss and subwavelength field confinement, along with reasonable mode power inside the low-index gap region. Investigations on the directional coupling between adjacent identical waveguides indicate that ultralow crosstalk can be enabled by the quasi-TE mode, with the coupling length more than two orders of magnitude larger than that achieved by the plasmonic mode in conventional hybrid counterparts. The presented metal-coated dielectric wedge structures can be employed as important building blocks for a number of integrated nanophotonic components, and could also enable numerous applications at the subwavelength scale.

Ultra-short silicon-on-insulator (SOI) polarization rotator between a slot and a strip waveguide based on a nonlinear raised cosine flat-tip taper

A design of ultra-short integrated polarization rotator (PR) with nonlinear and flat-tip tapers is demonstrated theoretically. Based on mode-evolution theory and three-dimensional (3D) finite-difference time-domain (FDTD) simulation, raised cosine profiled tapers are introduced and optimized in the transition region, which improve the polarized modes coupling and decrease the conversion length to 6 μm for the wavelength of 1.55 μm. Numerical simulations obtain extinction ratio of 32 dB and loss of 0.14 dB with practical material parameters. The method and result presented here can be extremely valuable for applications in polarization diversity circuits.

Ultrashort slot polarization rotator with double paralleled nonlinear geometry slot crossings

The polarization rotation of an optical slot structure from the vertical to the horizontal direction, or vice versa, is demonstrated theoretically within an ultrashort conversion length. Based on mode-evolution theory and three-dimensional finite-difference time-domain simulation, two parallel nonlinearly tapered crossings are introduced and optimized in the transition region, which efficiently decreases the conversion length from 11 to 5 μm for the wavelength of 1.55 μm in a silicon-on-isolator system. More importantly, the extinction ratio of 22 dB and loss of 0.12 dB are numerically obtained using practical material parameters. The method and result presented here may be extremely valuable for the applications of integrated slot structures.

CMOS compatible horizontal nanoplasmonic slot waveguides TE-pass polarizer on silicon-on-insulator platform

An ultra-compact broadband TE-pass polarizer was proposed and demonstrated on the silicon-on-insulator (SOI) platform, using the horizontal nanoplasmonic slot waveguide (HNSW). Detailed design principle was presented, taking advantage of the distinct confinement region of the TE and TM modes in the HNSW. TM mode cut-off could be achieved when waveguide width was below 210 nm. Proof-of-concept devices were subsequently fabricated in a CMOS-compatible process. The optimized device had an active region length of 1 μm, three orders of magnitude smaller than similar device previously demonstrated on the SOI platform. More than 16 dB polarization extinction ratio was achieved across 80 nm wavelength range, with a relatively low insertion loss of 2.2dB. The compact device size and excellent broadband performance could provide a simple yet satisfactory solution to the polarization dependent performance drawback of the silicon photonics devices on the SOI platform.

Theoretical investigation of ultracompact and athermal Si electro-optic modulator based on Cu-TiO2-Si hybrid plasmonic donut resonator

An ultracompact silicon electro-optic modulator operating at 1550-nm telecom wavelengths is proposed and analyzed theoretically, which consists of a Cu-TiO(2)-Si hybrid plasmonic donut resonator evanescently coupled with a conventional Si channel waveguide. Owing to a negative thermo-optic coefficient of TiO(2) (~-1.8 × 10(-4) K(-1)), the real part of effective modal index of the curved Cu-TiO(2)-Si hybrid waveguide can be temperature-independent (i.e., athermal) if the TiO(2) interlayer and the beneath Si core have a certain thickness ratio. A voltage applied between the ring-shaped Cu cap and a cylinder metal electrode positioned at the center of the donut,--which makes Ohmic contact to Si, induces a ~1-nm-thick free-electron accumulation layer at the TiO(2)/Si interface. The optical field intensity in this thin accumulation layer is significantly enhanced if the accumulation concentration is sufficiently large (i.e., > ~6 × 10(20) cm(-3)), which in turn modulates both the resonance wavelengths and the extinction ratio of the donut resonator simultaneously. For a modulator with the total footprint inclusive electrodes of ~8.6 μm(2), 50-nm-thick TiO(2), and 160-nm-thick Si core, FDTD simulation predicts that it has an insertion loss of ~2 dB, a modulation depth of ~8 dB at a voltage swing of ~6 V, a speed-of-response of ~35 GHz, and a switching energy of ~0.45 pJ/bit, and it is athermal around room temperature. The modulator's performances can be further improved by optimization of the coupling strength between the bus waveguide and the donut resonator.

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal

We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They are hybrid plasmonic waveguides, and they have a feature that their insulator is replaceable with functional material. We explain a fabrication process for them and discuss fabrication results based on 8-inch silicon-on-insulator wafers. We measured the propagation characteristics of the MISIM waveguides that were actually fabricated to be connected to Si photonic waveguides through symmetric and asymmetric couplers. When incident light from an optical source has transverse electric (TE) polarization and its wavelength is 1318 or 1554 nm, their propagation losses are between 0.2 and 0.3 dB/μm. Excess losses due to the symmetric couplers are around 0.5 dB, which are smaller than those due to the asymmetric couplers. Additional measurement results indicate that the MISIM waveguide supports a TE-polarized hybrid plasmonic mode. Finally, we explain a process of removing the insulator without affecting the remaining MISIM structure to fabricate ~30-nm-wide nanochannels which may be filled with functional material.

Photonic signal processing on electronic scales: electro-optical field-effect nanoplasmonic modulator

We develop a highly efficient approach for the modulation of photonic signals at the nanoscale, combining an ultrasubwavelength plasmonic guiding scheme with a robust electroabsorption effect in degenerate semiconductors. We numerically demonstrate an active electro-optical field-effect nanoplasmonic modulator with a revolutionary size of just 25 × 30 × 100 nm(3), providing signal extinction ratios as high as 2 at switching voltages of only 1 V. The design is compatible with complementary metal-oxide-semiconductor (CMOS) technology and allows low-loss insertion in standard plasmonic and Si-photonic circuitry.

Performance of ultracompact copper-capped silicon hybrid plasmonic waveguide-ring resonators at telecom wavelengths

Ultracompact Cu-capped Si hybrid plasmonic waveguide-ring resonators (WRRs) with ring radii of 1.09-2.59 μm are fabricated on silicon on insulator substrates using standard complementary metal-oxide-semiconductor technology and characterized over the telecom wavelength range of 1.52-1.62 μm. The dependence of the spectral characteristics on the key structural parameters such as the Si core width, the ring radius, the separation gap between the ring and bus waveguides, and the ring configuration is systematically studied. A WRR with 2.59-μm radius and 0.250-μm nominal gap exhibits good performances such as normalized insertion loss of ~0.1 dB, extinction ratio of ~12.8 dB, free spectral range of ~47 nm, and quality factor of ~275. The resonance wavelength is redshifted by ~4.6 nm and an extinction ratio of ~7.5 dB is achieved with temperature increasing from 27 to 82°C. The corresponding effective thermo-optical coefficient (dn(g)/dT) is estimated to be ~1.6 × 10(-4) K(-1), which is contributed by the thermo-optical effect of both the Si core and the Cu cap, as revealed by numerical simulations. Combined with the compact size and the high thermal conductivity of Cu, various effective thermo-optical devices based on these Cu-capped plasmonic WRRs could be realized for seamless integration in existing Si electronic-photonic integrated circuits.

MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm(-1)), in good agreement with predictions using ellipsometric optical constants of Cu.

Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO₂-Si-SiO₂-Cu nanoplasmonic waveguides

We report systematic results on the development of horizontal Cu-SiO₂-Si-SiO₂-Cu nanoplasmonic waveguide components operating at 1550-nm telecom wavelengths, including straight waveguides, sharp 90° bends, power splitters, and Mach-Zehnder interferometers (MZIs). Owing to the relatively low loss for propagating (~0.3 dB/µm) and for 90° sharply bending (~0.73 dB/turn), various ultracompact power splitters and MZIs are experimentally realized on a silicon-on-insulator (SOI) platform using standard CMOS technology. The demonstrated splitters exhibit a relatively low excess loss and the MZIs exhibit good performance such as high extinction ratio of ~18 dB and low normalized insertion loss of ~1.7 dB. The experimental results of these devices agree well with those predicted from numerical simulations with suitable Cu permittivity data.

Ultrafast all-optical switching in a silicon-based plasmonic nanoring resonator

A silicon-based plasmonic nanoring resonator is proposed for ultrafast, all-optical switching applications. Full-wave numerical simulations demonstrate that the photogeneration of free carriers enables ultrafast switching of the device by shifting the transmission minimum of the resonator with a switching time of 3 ps. The compact 1.00 μm² device footprint demonstrates the potential for high integration density plasmonic circuitry based on this device geometry.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used.