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Nguyen THN, Koompai N, Turpaud V, Montesinos-Ballester M, Peltier J, Frigerio J, Ballabio A, Giani R, Coudevylle JR, Villebasse C, Bouville D, Alonso-Ramos C, Vivien L, Isella G, Marris-Morini D. 1 GHz electro-optical silicon-germanium modulator in the 5-9 µm wavelength range. OPTICS EXPRESS 2022; 30:47093-47102. [PMID: 36558646 DOI: 10.1364/oe.476164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Spectroscopy in the mid-infrared (mid-IR) wavelength range is a key technique to detect and identify chemical and biological substances. In this context, the development of integrated optics systems paves the way for the realization of compact and cost-effective sensing systems. Among the required devices, an integrated electro-optical modulator (EOM) is a key element for advanced sensing circuits exploiting dual comb spectroscopy. In this paper, we have experimentally demonstrated an integrated EOM operating in a wide wavelength range, i.e. from 5 to 9 µm at radio frequency (RF) as high as 1 GHz. The modulator exploits the variation of free carrier absorption in a Schottky diode embedded in a graded silicon germanium (SiGe) photonic waveguide.
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2
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Sun C, Wei M, Tang B, Ma H, Zhang P, Luo Y, Jian J, Li L, Lin H. High-performance silicon PIN diode switches in the 2-µm wave band. OPTICS LETTERS 2022; 47:2758-2761. [PMID: 35648923 DOI: 10.1364/ol.453786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 04/26/2022] [Indexed: 06/15/2023]
Abstract
The 2-µm wave band has attracted significant research interest due to its potential applications for next-generation high-capacity optical communication and sensing. As the key component, fast optical switches are essential for an advanced and reconfigurable optical network. Motivated by this prospect, we propose and demonstrate two typical silicon PIN diode switches at 2 µm. One is based on a coupled microring resonator (CMRR), and the other is based on a Mach-Zehnder interferometer (MZI) with a push-pull-like configuration. The measured insertion loss of the CMRR switch is <2.5 dB, and the cross talk is <-10.8 dB. The insertion loss of the MZI switch is <2 dB, and the cross talk is <-15.6 dB. The switch times of these two structures are both lower than 12.5 ns.
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3
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Geier S, Kratky T, Günther S, Fässler TF. Inverse Opal‐Structured Sn and Sn/Ge Films from Soluble Zintl Clusters as Precursors. Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202100362] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- S. Geier
- Department of Chemistry Chair of Inorganic Chemistry with Focus on Novel Materials Technical University Munich Lichtenbergstraße 4 85747 Garching Germany
| | - T. Kratky
- Department of Chemistry Associate Professorship of Physical Chemistry with Focus on Catalysis Technical University Munich Lichtenbergstraße 4 85747 Garching Germany
| | - S. Günther
- Department of Chemistry Associate Professorship of Physical Chemistry with Focus on Catalysis Technical University Munich Lichtenbergstraße 4 85747 Garching Germany
| | - T. F. Fässler
- Department of Chemistry Chair of Inorganic Chemistry with Focus on Novel Materials Technical University Munich Lichtenbergstraße 4 85747 Garching Germany
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4
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Wu Y, Qu Z, Osman A, Wei C, Cao W, Tarazona A, Oo SZ, Chong HMH, Muskens OL, Mashanovich GZ, Nedeljkovic M. Nanometallic antenna-assisted amorphous silicon waveguide integrated bolometer for mid-infrared. OPTICS LETTERS 2021; 46:677-680. [PMID: 33528439 DOI: 10.1364/ol.412529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 12/18/2020] [Indexed: 06/12/2023]
Abstract
Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10-5W/K, and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.
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Hagan DE, Ye M, Wang P, Cartledge JC, Knights AP. High-speed performance of a TDFA-band micro-ring resonator modulator and detector. OPTICS EXPRESS 2020; 28:16845-16856. [PMID: 32549498 DOI: 10.1364/oe.393538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2020] [Accepted: 04/21/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate a silicon-on-insulator micro-ring resonator (MRR) modulator and defect-mediated (DM) detector operating at a wavelength near 2 µm for use in the thulium doped fiber amplifier wavelength band. The MRR modulator was critically coupled with an unbiased notch-depth of 20 dB and Q-factor of 4700. The resonance shift under reverse bias was 23 pm/V with a calculated VπLπ of 2.2 to 2.6 V·cm from -1 to -8 V, respectively. Simulations are in good agreement with the measured data. The experimental modulation bandwidth was 12.5 GHz, limited by the response of the commercial external detector used for this measurement. The DM detector was operated in avalanche mode, had 1.97 µm wavelength responsivities of 0.04 and 0.14 A/W, and had bandwidths greater than 16 and 7.5 GHz at -15 and -30 V biases, respectively. Large-signal measurement demonstrated open eye-diagrams at 5, 10, and 12.5 Gbps for the DM detector and also for an optical link consisting of the modulator and detector integrated on the same silicon chip.
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Guo J, Li J, Liu C, Yin Y, Wang W, Ni Z, Fu Z, Yu H, Xu Y, Shi Y, Ma Y, Gao S, Tong L, Dai D. High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm. LIGHT, SCIENCE & APPLICATIONS 2020; 9:29. [PMID: 32140220 PMCID: PMC7048841 DOI: 10.1038/s41377-020-0263-6] [Citation(s) in RCA: 53] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2019] [Revised: 01/26/2020] [Accepted: 02/14/2020] [Indexed: 05/06/2023]
Abstract
Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However, the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work, we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon-graphene hybrid plasmonic waveguide, which enables efficient light absorption in graphene at 1.55 μm and beyond. When operating at 2 μm, the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of >20 GHz. When operating at 1.55 μm, the present photodetector also works very well with a broad 3 dB bandwidth of >40 GHz (setup-limited) and a high responsivity of ~0.4 A/W even with a low bias voltage of -0.3 V. This work paves the way for achieving high-responsivity and high-speed silicon-graphene waveguide photodetection in the near/mid-infrared ranges, which has applications in optical communications, nonlinear photonics, and on-chip sensing.
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Affiliation(s)
- Jingshu Guo
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Jiang Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Chaoyue Liu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Yanlong Yin
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Wenhui Wang
- Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, 211189 Nanjing, China
| | - Zhenhua Ni
- Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, 211189 Nanjing, China
| | - Zhilei Fu
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Hui Yu
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Yang Xu
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Yaocheng Shi
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Yungui Ma
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Shiming Gao
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Limin Tong
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Daoxin Dai
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
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Kiani KM, Frankis HC, Mbonde HM, Mateman R, Leinse A, Knights AP, Bradley JDB. Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip. OPTICS LETTERS 2019; 44:5788-5791. [PMID: 31774780 DOI: 10.1364/ol.44.005788] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2019] [Accepted: 10/25/2019] [Indexed: 06/10/2023]
Abstract
We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.7 dB/cm at 1479 nm based on the quality factor measured in microring resonators. Gain measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860-2000 nm under 1620 nm pumping and up to 7.6 dB total gain at 1870 nm, corresponding to 1.1 dB/cm. These results are promising for the realization of highly compact thulium-doped amplifiers in the emerging 2 μm band for silicon-based photonic microsystems.
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Hagan DE, Nedeljkovic M, Cao W, Thomson DJ, Mashanovich GZ, Knights AP. Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths. OPTICS EXPRESS 2019; 27:166-174. [PMID: 30645364 DOI: 10.1364/oe.27.000166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Accepted: 12/12/2018] [Indexed: 06/09/2023]
Abstract
We examine the electro-optic effect at wavelengths ranging from 1.31 to 2.02 μm for: (1) an Electronic Variable Optical Attenuator (EVOA); and (2) a Micro-Ring Resonator (MRR). For the EVOA, simulations were performed to ascertain the relationship between free-carrier concentration and optical attenuation, and are in agreement with our observation of an increase in attenuation with increasing wavelength. MRRs were fabricated for use around wavelengths of 2 μm to explore the sensitivity of operation to bus-to-ring coupling gap and p-n junction offset. Trends observed in the experiment are replicated by simulation, calibrated using the observations of the EVOA operation. The previously proposed efficiency increase of operation around 2 μm compared to more traditional wavelengths is demonstrated. Future development of devices for these wavelengths, supported by amplification using Thulium Doped Fiber Amplifier (TDFA) technology, is a promising route to aid in the alleviation of increasing demands on communication networks.
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Wang J, Long Y. On-chip silicon photonic signaling and processing: a review. Sci Bull (Beijing) 2018; 63:1267-1310. [PMID: 36658865 DOI: 10.1016/j.scib.2018.05.038] [Citation(s) in RCA: 82] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2018] [Revised: 05/09/2018] [Accepted: 05/15/2018] [Indexed: 01/21/2023]
Abstract
The arrival of the big data era has driven the rapid development of high-speed optical signaling and processing, ranging from long-haul optical communication links to short-reach data centers and high-performance computing, and even micro-/nano-scale inter-chip and intra-chip optical interconnects. On-chip photonic signaling is essential for optical data transmission, especially for chip-scale optical interconnects, while on-chip photonic processing is a critical technology for optical data manipulation or processing, especially at the network nodes to facilitate ultracompact data management with low power consumption. In this paper, we review recent research progress in on-chip photonic signaling and processing on silicon photonics platforms. Firstly, basic key devices (lasers, modulators, detectors) are introduced. Secondly, for on-chip photonic signaling, we present recent works on on-chip data transmission of advanced multi-level modulation signals using various silicon photonic integrated devices (microring, slot waveguide, hybrid plasmonic waveguide, subwavelength grating slot waveguide). Thirdly, for on-chip photonic processing, we summarize recent works on on-chip data processing of advanced multi-level modulation signals exploiting linear and nonlinear effects in different kinds of silicon photonic integrated devices (strip waveguide, directional coupler, 2D grating coupler, microring, silicon-organic hybrid slot waveguide). Various photonic processing functions are demonstrated, such as photonic switch, filtering, polarization/wavelength/mode (de)multiplexing, wavelength conversion, signal regeneration, optical logic and computing. Additionally, we also introduce extended silicon+ photonics and show recent works on on-chip graphene-silicon photonic signal processing. The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip. It is believed that silicon photonics will enable more and more emerging advanced applications even beyond silicon photonic signaling and processing.
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Affiliation(s)
- Jian Wang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yun Long
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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10
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Zhang Q, Yu H, Qi T, Fu Z, Jiang X, Yang J. Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique. Sci Rep 2018; 8:9929. [PMID: 29967412 PMCID: PMC6028655 DOI: 10.1038/s41598-018-28139-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2018] [Accepted: 06/15/2018] [Indexed: 11/16/2022] Open
Abstract
Silicon waveguide photodiodes (SiWG PD) based on the bulk defect-mediated absorption (BDA) of sub-bandgap photons are suitable to realize in-line optical power monitors for silicon photonic integrated circuits. Deep-level states to enable the BDA can be induced by exploiting the ion implantation steps that are used to embed PN junctions for carrier-depletion-based modulators. This manner usually exhibits limited responsivities since relevant processing conditions are optimized for the modulation rather than the BDA. In this letter, we solve this issue with the doping compensation technique. This technique overlaps P-type and N-type implantation windows at the waveguide core. The responsivity is enhanced due to the increased density of lattice defects and the reduced density of free carriers in the compensated silicon. Influences of the dimension of the dopant compensation region on responsivity and operation speed are investigated. As the width of this region increases from 0 μm to 0.4 μm, the responsivity at -5 V is improved from 2 mA/W to 17.5 mA/W. This level is comparable to BDA based SiWG PDs relying on dedicated ion bombardments. On the other hand, a bit-error-rate test at 10 Gb/s suggests that the device with 0.2-μm-wide compensation region exhibits the highest sensitivity.
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Affiliation(s)
- Qiang Zhang
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Hui Yu
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China.
| | - Tian Qi
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhilei Fu
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xiaoqing Jiang
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jianyi Yang
- College of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, 310027, China
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12
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Park SJ, Zakar A, Zerova VL, Chekulaev D, Canham LT, Kaplan A. All-optical modulation in Mid-Wavelength Infrared using porous Si membranes. Sci Rep 2016; 6:30211. [PMID: 27440224 PMCID: PMC4954954 DOI: 10.1038/srep30211] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2016] [Accepted: 06/29/2016] [Indexed: 11/16/2022] Open
Abstract
We demonstrate for the first time the possibility of all-optical modulation of self-standing porous Silicon (pSi) membrane in the Mid-Wavelength Infrared (MWIR) range using femtosecond pump-probe techniques. To study optical modulation, we used pulses of an 800 nm, 60 femtosecond for pump and a MWIR tunable probe in the spectral range between 3.5 and 4.4 μm. We show that pSi possesses a natural transparency window centred around 4 μm. Yet, about 55% of modulation contrast can be achieved by means of optical excitation at the pump power of 60 mW (4.8 mJ/cm2). Our analysis shows that the main mechanism of the modulation is interaction of the MWIR signal with the free charge carrier excited by the pump. The time-resolved measurements showed a sub-picosecond rise time and a recovery time of about 66 ps, which suggests a modulation speed performance of ~15 GHz. This optical modulation of pSi membrane in MWIR can be applied to a variety of applications such as thermal imaging and free space communications.
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Affiliation(s)
- Sung Jin Park
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom
| | - Ammar Zakar
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom
| | - Vera L Zerova
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom
| | - Dimitri Chekulaev
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom
| | - Leigh T Canham
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom.,pSiMedica Ltd. Malvern Hills Science Park, Geraldine Road, Malvern, WR14 3SZ, United Kingdom
| | - Andre Kaplan
- Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston B15 2TT, United Kingdom
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Souhan B, Grote RR, Chen CP, Huang HC, Driscoll JB, Lu M, Stein A, Bakhru H, Bergman K, Green WMJ, Osgood RM. Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared. OPTICS EXPRESS 2014; 22:27415-27424. [PMID: 25401890 DOI: 10.1364/oe.22.027415] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.
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Troia B, Khokhar AZ, Nedeljkovic M, Penades JS, Passaro VMN, Mashanovich GZ. Cascade-coupled racetrack resonators based on the Vernier effect in the mid-infrared. OPTICS EXPRESS 2014; 22:23990-4003. [PMID: 25321975 DOI: 10.1364/oe.22.023990] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
In this paper we report the experimental demonstration of racetrack resonators in silicon-on-insulator technology platform operating in the mid-infrared wavelength range of 3.7-3.8 μm. Insertion loss lower than 1 dB and extinction ratio up to 30 dB were measured for single resonators. The experimental characterization of directional couplers and bending losses in silicon rib waveguides are also reported. Furthermore, we present the design and fabrication of cascade-coupled racetrack resonators based on the Vernier effect. Experimental spectra of Vernier architectures were demonstrated for the first time in the mid-infrared with insertion loss lower than 1 dB and maximum interstitial peak suppression of 10 dB.
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