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Long X, Huang Z, Tian Y, Du J, Liu Y. High-resolution on-chip spatial heterodyne Fourier transform spectrometer based on artificial neural network and PCSBL reconstruction algorithm. OPTICS EXPRESS 2023; 31:33608-33621. [PMID: 37859138 DOI: 10.1364/oe.500758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 09/03/2023] [Indexed: 10/21/2023]
Abstract
A novel compact on-chip Fourier transform (FT) spectrometer has been proposed based on the silicon-on-insulator (SOI) platform with wide operating bandwidth and high resolution. The spectrometer consists of a 16-channel power splitter and a Mach-Zehnder interferometer (MZI) array of 16 MZIs with linearly increasing optical path length (OPL) difference. We have also developed a spectral retrieval algorithm based on the pattern-coupled sparse Bayesian learning (PCSBL) algorithm and artificial neural network (ANN). The experimental results show that the designed spectrometer has a flat transmission characteristic in the wavelength range between 1500 nm and 1600 nm, indicating that the device has a wide operating bandwidth of 100 nm. In addition, with the assistance of the spectral retrieval algorithm, our spectrometer has the ability to reconstruct narrowband signals with full width at half maximum (FWHM) of 0.5 nm and a triple-peaked signal separated by a 3-nm distance.
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2
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Karnik TS, Dao KP, Du Q, Diehl L, Pflügl C, Vakhshoori D, Hu J. High-efficiency mid-infrared InGaAs/InP arrayed waveguide gratings. OPTICS EXPRESS 2023; 31:5056-5068. [PMID: 36785457 DOI: 10.1364/oe.480704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Photonic integrated circuits and mid-infrared quantum cascade lasers have attracted significant attention over the years because of the numerous applications enabled by these compact semiconductor chips. In this paper, we demonstrate low loss passive waveguides and highly efficient arrayed waveguide gratings that can be used, for example, to beam combine infrared (IR) laser arrays. The waveguide structure used consists of an In0.53Ga0.47As core and InP cladding layers. This material system was chosen because of its compatibility with future monolithic integration with quantum cascade lasers. Different photonic circuits were fabricated using standard semiconductor processes, and experiments conducted with these chips demonstrated low-loss waveguides with an estimated propagation loss of ∼ 1.2 dB/cm as well as micro-ring resonators with an intrinsic Q-factor of 174,000. Arrayed waveguide gratings operating in the 5.15-5.34 µm range feature low insertion loss and non-uniformity of ∼ 0.9 dB and ∼ 0.6 dB, respectively. The demonstration of the present photonic circuits paves the path toward monolithic fabrication of compact infrared light sources with advanced functionalities beneficial to many chemical sensing and high-power applications.
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3
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Simulation and Design of HgSe Colloidal Quantum-Dot Microspectrometers. COATINGS 2022. [DOI: 10.3390/coatings12070888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
In recent years, colloidal quantum dots (CQD) have been intensively studied in various fields due to their excellent optical properties, such as size-tunable absorption features and wide spectral tunability. Therefore, CQDs are promising infrared materials to become alternatives for epitaxial semiconductors, such as HgCdTe, InSb, and type II superlattices. Here, we report a simulation study of a microspectrometer fabricated by integrating an intraband HgSe CQD detector with a distributed Bragg reflector (DBR). Intraband HgSe CQDs possess unique narrowband absorption and optical response, which makes them an ideal material platform to achieve high-resolution detection for infrared signatures, such as molecular vibration. A microspectrometer with a center wavelength of 4 µm is studied. The simulation results show that the optical absorption rate of the HgSe CQD detector can be increased by 300%, and the full-width-at-half-maximum (FWHM) is narrowed to 30%, realizing precise regulation of the absorption wavelength. The influence of the incident angle of light waves on the microspectrometer is also simulated, and the results show that the absorption rate of the HgSe quantum dot detector is increased 2–3 times within the incident angle of 0–23 degrees, reaching a spectral absorption rate of more than 80%. Therefore, we believe that HgSe CQDs are a promising material for realizing practical HgSe microspectrometers.
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Alberti S, Datta A, Jágerská J. Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy. SENSORS (BASEL, SWITZERLAND) 2021; 21:7224. [PMID: 34770531 PMCID: PMC8587819 DOI: 10.3390/s21217224] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/25/2021] [Accepted: 10/26/2021] [Indexed: 11/17/2022]
Abstract
On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light-analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.
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Affiliation(s)
- Sebastián Alberti
- Department of Physics and Technology, UiT the Arctic University of Norway, 9019 Tromsø, Norway; (A.D.); (J.J.)
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Ma Y, Chang Y, Dong B, Wei J, Liu W, Lee C. Heterogeneously Integrated Graphene/Silicon/Halide Waveguide Photodetectors toward Chip-Scale Zero-Bias Long-Wave Infrared Spectroscopic Sensing. ACS NANO 2021; 15:10084-10094. [PMID: 34060811 DOI: 10.1021/acsnano.1c01859] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Mid-infrared absorption spectroscopy plays an important role in molecule identification and quantification for widespread applications. Integrated photonics provides opportunities to perform spectroscopic sensing on-chip for the minimization of device size, cost, and power consumption. The integration of waveguides and photodetectors is an indispensable step toward the realization of these on-chip sensing systems. It is desired to extend the operating wavelengths of these on-chip sensing systems to the long-wave infrared (LWIR) range to utilize more molecular absorption fingerprints. However, the development of LWIR waveguide-integrated photodetectors faces challenges from both waveguide platforms due to the bottom cladding material absorption and photodetection technologies due to the low LWIR photon energy. Here, we demonstrate LWIR waveguide-integrated photodetectors through heterogeneous integration of graphene photodetectors and Si waveguides on CaF2 substrates. A high-yield transfer printing method is developed for flexibly integrating the waveguide and substrate materials to solve the bottom cladding material absorption issue. The fabricated Si-on-CaF2 waveguides show low losses in the broad LWIR wavelength range of 6.3-7.1 μm. The graphene photodetector achieves a broadband responsivity of ∼8 mA/W in these low-photon-energy LWIR wavelengths under zero-bias operation with the help of waveguide integration and plasmonic enhancement. We further integrate the graphene photodetector with a Si-on-CaF2 folded waveguide and demonstrate on-chip absorption sensing using toluene as an example. These results reveal the potential of our technology for the realization of chip-scale, low-cost, and low-power-consumption LWIR spectroscopic sensing systems.
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Affiliation(s)
- Yiming Ma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Yuhua Chang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Weixin Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
- NUS Graduate School - Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore 119077
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Boes A, Nguyen TG, Chang L, Bowers JE, Ren G, Mitchell A. Integrated photonic high extinction short and long pass filters based on lateral leakage. OPTICS EXPRESS 2021; 29:18905-18914. [PMID: 34154136 DOI: 10.1364/oe.426442] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2021] [Accepted: 05/24/2021] [Indexed: 06/13/2023]
Abstract
In this contribution we present a new approach to achieve high extinction short and long pass wavelength filters in the integrated photonic platform of lithium niobate on insulator. The filtering of unwanted wavelengths is achieved by employing lateral leakage and is related to the bound state in the continuum phenomenon. We show that it is possible to control the filter edge wavelength by adjusting the waveguide dimensions and that an extinction of hundreds of dB/cm is readily achievable. This enabled us to design a pump wavelength suppression of more than 100 dB in a 3.5 mm long waveguide, which is essential for on-chip integration of quantum-correlated photon pair sources. These findings pave the way to integrate multi wavelength experiments on chip for the next generation of photonic integrated circuits.
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Li A, Fainman Y. On-chip spectrometers using stratified waveguide filters. Nat Commun 2021; 12:2704. [PMID: 33976178 PMCID: PMC8113243 DOI: 10.1038/s41467-021-23001-6] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2020] [Accepted: 03/25/2021] [Indexed: 11/11/2022] Open
Abstract
We present an ultra-compact single-shot spectrometer on silicon platform for sparse spectrum reconstruction. It consists of 32 stratified waveguide filters (SWFs) with diverse transmission spectra for sampling the unknown spectrum of the input signal and a specially designed ultra-compact structure for splitting the incident signal into those 32 filters with low power imbalance. Each SWF has a footprint less than 1 µm × 30 µm, while the 1 × 32 splitter and 32 filters in total occupy an area of about 35 µm × 260 µm, which to the best of our knowledge, is the smallest footprint spectrometer realized on silicon photonic platform. Experimental characteristics of the fabricated spectrometer demonstrate a broad operating bandwidth of 180 nm centered at 1550 nm and narrowband peaks with 0.45 nm Full-Width-Half-Maximum (FWHM) can be clearly resolved. This concept can also be implemented using other material platforms for operation in optical spectral bands of interest for various applications. Compact spectrometers that are simple and scalable in design can enable many applications. Here the authors demonstrate a silicon photonics based single-shot spectrometer that uses a group of waveguide frequency filters to construct the spectrum.
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Affiliation(s)
- Ang Li
- Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA.
| | - Yeshaiahu Fainman
- Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA
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Wu Y, Qu Z, Osman A, Wei C, Cao W, Tarazona A, Oo SZ, Chong HMH, Muskens OL, Mashanovich GZ, Nedeljkovic M. Nanometallic antenna-assisted amorphous silicon waveguide integrated bolometer for mid-infrared. OPTICS LETTERS 2021; 46:677-680. [PMID: 33528439 DOI: 10.1364/ol.412529] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 12/18/2020] [Indexed: 06/12/2023]
Abstract
Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10-5W/K, and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.
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Malik A, Spott A, Wang Y, Stanton EJ, Peters J, Bowers JE. High resolution, high channel count mid-infrared arrayed waveguide gratings in silicon. OPTICS LETTERS 2020; 45:4551-4554. [PMID: 32797007 DOI: 10.1364/ol.397135] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Accepted: 07/16/2020] [Indexed: 06/11/2023]
Abstract
Arrayed waveguide gratings (AWGs) working in the 4.7 µm wavelength range are reported on silicon-on-insulator waveguides with 1500 nm thick silicon and 2 µm thick buried oxide layers. For eight channel devices, three different channel spacings (200 GHz, 100 GHz, and 50 GHz) with cross talk levels of -32.31dB, -31.87dB, and -27.28dB and insertion loss levels of -1.43dB, -4.2dB, and -2.3dB, respectively, are demonstrated. Fourteen channel AWGs with 170 GHz channel spacing and 16 channel AWGs with 87 GHz channel spacing are shown to have a cross talk value of -21.67dB and -24.30dB and insertion loss value of -4.2dB and -3.8dB, respectively. Two AWGs with 10 nm difference in channel peak are designed, and the measurements show a 9.3 nm difference. The transmission spectrum shift as a function of temperature is found to be 0.22 nm/°C.
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Microring resonator-assisted Fourier transform spectrometer with enhanced resolution and large bandwidth in single chip solution. Nat Commun 2019; 10:2349. [PMID: 31138800 PMCID: PMC6538731 DOI: 10.1038/s41467-019-10282-1] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Accepted: 04/30/2019] [Indexed: 12/03/2022] Open
Abstract
Single chip integrated spectrometers are critical to bring chemical and biological sensing, spectroscopy, and spectral imaging into robust, compact and cost-effective devices. Existing on-chip spectrometer approaches fail to realize both high resolution and broad band. Here we demonstrate a microring resonator-assisted Fourier-transform (RAFT) spectrometer, which is realized using a tunable Mach-Zehnder interferometer (MZI) cascaded with a tunable microring resonator (MRR) to enhance the resolution, integrated with a photodetector onto a single chip. The MRR boosts the resolution to 0.47 nm, far beyond the Rayleigh criterion of the tunable MZI-based Fourier-transform spectrometer. A single channel achieves large bandwidth of ~ 90 nm with low power consumption (35 mW for MRR and 1.8 W for MZI) at the expense of degraded signal-to-noise ratio due to time-multiplexing. Integrating a RAFT element array is envisaged to dramatically extend the bandwidth for spectral analytical applications such as chemical and biological sensing, spectroscopy, image spectrometry, etc. Here, the authors demonstrate a microring resonator-assisted Fourier-transform spectrometer, which is realized using a thermally tunable photonic Mach-Zehnder interferometer cascaded with a tunable microring resonator to enhance the resolution, all integrated with a photodetector onto a single chip.
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11
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Hänsel A, Heck MJR. Feasibility of Telecom-Wavelength Photonic Integrated Circuits for Gas Sensors. SENSORS 2018; 18:s18092870. [PMID: 30200292 PMCID: PMC6164772 DOI: 10.3390/s18092870] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/24/2018] [Revised: 08/16/2018] [Accepted: 08/26/2018] [Indexed: 12/03/2022]
Abstract
To be of commercial interest, gas sensors must optimise, among others, sensitivity, selectivity, longevity, cost and measurement speed. Using the example of ammonia, we establish that integrated optical sensors provide means to maintain the benefits of optical detection set-ups at, in principle, a lower cost and smaller footprint than currently available commercial products. Photonic integrated circuits (PICs) can be used in environmental and agricultural monitoring. The small footprint and great cost scaling of PICs allow for sensor networks with multiple devices. We show, that Indium Phosphide based commercial foundries reached the technological maturity to enable ammonia detection levels at less than 100 ppb. The current unavailability of portable, low cost ammonia sensors with such detection levels prevents emission monitoring, for example, in pig farms. The feasibility of these sensors is investigated by applying the common noise figures of the multiproject wafer platforms operating around 1550 nm to a model for an absorption measurement. The analysis is extended to other relevant gas species with absorption features near telecom-wavelengths.
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Affiliation(s)
- Andreas Hänsel
- Department of Engineering, Aarhus University, Finlandsgade 22, 8200 Aarhus, Denmark.
| | - Martijn J R Heck
- Department of Engineering, Aarhus University, Finlandsgade 22, 8200 Aarhus, Denmark.
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12
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Wang R, Vasiliev A, Muneeb M, Malik A, Sprengel S, Boehm G, Amann MC, Šimonytė I, Vizbaras A, Vizbaras K, Baets R, Roelkens G. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range. SENSORS 2017; 17:s17081788. [PMID: 28777291 PMCID: PMC5579498 DOI: 10.3390/s17081788] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2017] [Revised: 07/29/2017] [Accepted: 07/31/2017] [Indexed: 11/16/2022]
Abstract
The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.
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Affiliation(s)
- Ruijun Wang
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
| | - Anton Vasiliev
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
| | - Muhammad Muneeb
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
| | - Aditya Malik
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
| | - Stephan Sprengel
- Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, Garching 85748, Germany.
| | - Gerhard Boehm
- Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, Garching 85748, Germany.
| | - Markus-Christian Amann
- Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, Garching 85748, Germany.
| | - Ieva Šimonytė
- Brolis Semiconductors UAB, Moletu pl. 73, Vilnius LT-14259, Lithuania.
| | | | | | - Roel Baets
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
| | - Gunther Roelkens
- Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, Ghent 9052, Belgium.
- Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent 9000, Belgium.
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Vasiliev A, Malik A, Muneeb M, Kuyken B, Baets R, Roelkens G. On-Chip Mid-Infrared Photothermal Spectroscopy Using Suspended Silicon-on-Insulator Microring Resonators. ACS Sens 2016. [DOI: 10.1021/acssensors.6b00428] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Anton Vasiliev
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
| | - Aditya Malik
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
| | - Muhammad Muneeb
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
| | - Bart Kuyken
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
| | - Roel Baets
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
| | - Günther Roelkens
- Photonics
Research Group, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052 Ghent, Belgium
- Center
for Nano- and Biophotonics, Ghent University, 9000 Ghent, Belgium
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Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon. PHOTONICS 2016. [DOI: 10.3390/photonics3020035] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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