High speed ultra-broadband amplitude modulators with ultrahigh extinction >65 dB

On-chip silicon electro-optical modulator with ultra-high extinction ratio for fiber-optic distributed acoustic sensing

Ultra-high extinction ratio (ER) optical modulation is crucial for achieving high-performance fiber-optic distributed acoustic sensing (DAS) for various applications. Bulky acousto-optical modulators (AOM) as one of the key devices in DAS have been used for many years, but their relatively large volume and high power consumption are becoming the bottlenecks to hinder the development of ultra-compact and energy-efficient DAS systems that are highly demanded in practice. Here, an on-chip silicon electro-optical modulator (EOM) based on multiple coupled microrings is demonstrated with ultra-high ER of up to 68 dB while the device size and power consumption are only 260 × 185 μm2 and 3.6 mW, respectively, which are at least two orders of magnitude lower than those of a typical AOM. Such an on-chip EOM is successfully applied to DAS with an ultra-high sensitivity of -71.2 dB rad2/Hz (4 pε/√Hz) and a low spatial crosstalk noise of -68.1 dB rad2/Hz, which are very similar to those using an AOM. This work may pave the way for realization of next-generation ultra-compact DAS systems by integration of on-chip opto-electronic devices and modules with the capability of mass-production.

Recent progress in quantum photonic chips for quantum communication and internet

Recent years have witnessed significant progress in quantum communication and quantum internet with the emerging quantum photonic chips, whose characteristics of scalability, stability, and low cost, flourish and open up new possibilities in miniaturized footprints. Here, we provide an overview of the advances in quantum photonic chips for quantum communication, beginning with a summary of the prevalent photonic integrated fabrication platforms and key components for integrated quantum communication systems. We then discuss a range of quantum communication applications, such as quantum key distribution and quantum teleportation. Finally, the review culminates with a perspective on challenges towards high-performance chip-based quantum communication, as well as a glimpse into future opportunities for integrated quantum networks.

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm². Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 10⁵. This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.

Narrowband microwave-photonic notch filters using Brillouin-based signal transduction in silicon

The growing demand for bandwidth makes photonic systems a leading candidate for future telecommunication and radar technologies. Integrated photonic systems offer ultra-wideband performance within a small footprint, which can naturally interface with fiber-optic networks for signal transmission. However, it remains challenging to realize narrowband (∼MHz) filters needed for high-performance communications systems using integrated photonics. In this paper, we demonstrate all-silicon microwave-photonic notch filters with 50× higher spectral resolution than previously realized in silicon photonics. This enhanced performance is achieved by utilizing optomechanical interactions to access long-lived phonons, greatly extending available coherence times in silicon. We use a multi-port Brillouin-based optomechanical system to demonstrate ultra-narrowband (2.7 MHz) notch filters with high rejection (57 dB) and frequency tunability over a wide spectral band (6 GHz) within a microwave-photonic link. We accomplish this with an all-silicon waveguide system, using CMOS-compatible fabrication techniques.

It remains challenging to realize narrowband filters needed for high-performance communications systems using integrated photonics. Using a multi-port Brillouin-based optomechanical system, the authors demonstrate an ultra-narrowband notch filter with high rejection with CMOS compatible techniques.

Security Analysis of a Passive Continuous-Variable Quantum Key Distribution by Considering Finite-Size Effect

We perform security analysis of a passive continuous-variable quantum key distribution (CV-QKD) protocol by considering the finite-size effect. In the passive CV-QKD scheme, Alice utilizes thermal sources to passively make preparation of quantum state without Gaussian modulations. With this technique, the quantum states can be prepared precisely to match the high transmission rate. Here, both asymptotic regime and finite-size regime are considered to make a comparison. In the finite-size scenario, we illustrate the passive CV-QKD protocol against collective attacks. Simulation results show that the performance of passive CV-QKD protocol in the finite-size case is more pessimistic than that achieved in the asymptotic case, which indicates that the finite-size effect has a great influence on the performance of the single-mode passive CV-QKD protocol. However, we can still obtain a reasonable performance in the finite-size regime by enhancing the average photon number of the thermal state.

Impact of laser frequency noise on high-extinction optical modulation

In present literature on integrated modulation and filtering, limitations in the extinction ratio are dominantly attributed to a combination of imbalance in interfering wave amplitude, instability of control signals, stray light (e.g., in the cladding), or amplified spontaneous emission from optical amplifiers. Here we show that the existence of optical frequency noise in single longitudinal mode lasers presents an additional limit to the extinction ratio of optical modulators. A simple frequency-domain model is used to describe a linear optical system's response in the presence of frequency noise, and an intuitive picture is given for systems with arbitrary sampling time. Understanding the influence of frequency noise will help guide the design choices of device and system engineers and offer a path toward even higher-extinction optical modulators.

Plug-and-play continuous-variable quantum key distribution for metropolitan networks

We report a plug-and-play continuous variable quantum key distribution system (CV-QKD) with Gaussian modulated quadratures and a true local oscillator. The proposed configuration avoids the need for frequency locking two narrow line-width lasers. To minimize Rayleigh back-scattering, we utilize two independent fiber strands for the distribution of the laser and the transmission of the quantum signals. We further demonstrate the quantum-classical co-existing capability of our system by injecting high-power classical light in both fibers. A secret key rate up to 0.88 Mb/s is obtained by using two fiber links of 13 km and up to 0.3 Mb/s when adding 4 mW of classical light in the optical fiber used for transmitting the quantum signal. The reported performance indicates that the proposed QKD scheme has the potential to become an effective low-cost solution for metropolitan optical networks.

Si3N4 photonic integration platform at 1 µm for optical interconnects

Vertical-cavity surface-emitting lasers (VCSELs) are the predominant technology for high-speed short-range interconnects in data centers. Most short-range interconnects rely on GaAs-based multi-mode VCSELs and multi-mode fiber links operating at 850 nm. Recently, GaAs-based high-speed single-mode VCSELs at wavelengths > 1 µm have been demonstrated, which increases the interconnect reach using a single-mode fiber while maintaining low energy dissipation. If a suitable platform for passive wavelength- and space-multiplexing were developed in this wavelength range, this single-mode technology could deliver the multi-Tb/s interconnect capacity that will be required in future data centers. In this work, we show the first passive Si₃N₄ platform in the 1-µm band (1030-1075 nm) with an equivalent loss < 0.3 dB/cm, which is compatible with the system requirements of high-capacity interconnects. The waveguide structure is optimized to achieve simultaneously single-mode operation and low bending radius, and we demonstrate a wide range of high-performance building blocks, including arrayed waveguide gratings, Mach-Zehnder interferometers, splitters and low-loss fiber interfaces. This technology could be instrumental in scaling up the capacity and reducing the footprint of VCSEL-based optical interconnects and, thanks to the broad transparency in the near-infrared and compatibility with the Yb fiber amplifier window, enabling new applications in other domains as optical microscopy and nonlinear optics.

High-extinction electro-optic modulation on lithium niobate thin film

Integrated nanophotonics using lithium-niobate-on-insulator promises much-awaited solutions for scalable photonics techniques. One of its core functions is electro-optic modulation, which currently suffers limited extinction (<30  dB) due to inevitable fabrication errors. We exploit a cascaded Mach-Zehnder interferometry design to offset those errors, demonstrating up to 53 dB modulation extinction for a wide range of wavelengths between 1500 nm and 1600 nm. Together, its favorable features of chip integration, high extinction, good stability, and being broadband may prove valuable in a plethora of flourishing photonics applications.