High-performance racetrack resonator in silicon nitride - thin film lithium niobate hybrid platform

High-speed electro-optic modulation in topological interface states of a one-dimensional lattice

Electro-optic modulators are key components in data communication, microwave photonics, and quantum photonics. Modulation bandwidth, energy efficiency, and device dimension are crucial metrics of modulators. Here, we provide an important direction for the miniaturization of electro-optic modulators by reporting on ultracompact topological modulators. A topological interface state in a one-dimensional lattice is implemented on a thin-film lithium-niobate integrated platform. Due to the strong optical confinement of the interface state and the peaking enhancement of the electro-optic response, a topological cavity with a size of 1.6 × 140 μm2 enables a large modulation bandwidth of 104 GHz. The first topological modulator exhibits the most compact device size compared to reported LN modulators with bandwidths above 28 GHz, to the best of our knowledge. 100 Gb/s non-return-to-zero and 100 Gb/s four-level pulse amplitude modulation signals are generated. The switching energy is 5.4 fJ/bit, owing to the small electro-optic mode volume and low capacitance. The topological modulator accelerates the response time of topological photonic devices from the microsecond order to the picosecond order and provides an essential foundation for the implementation of large-scale lithium-niobate photonic integrated circuits.

Electrically tuned coupling of lithium niobate microresonators

Microresonators coupled with integrated waveguides operate stably but usually lack tunability for an optimal coupling state. In this Letter, we demonstrate a racetrack resonator with an electrically modulated coupling on an X-cut lithium niobate (LN) platform by introducing a Mach-Zehnder interferometer (MZI) with two balanced directional couplers (DCs) to realize light exchange. This device provides a wide-range coupling regulation, from under-coupling and critical coupling to deep over-coupling. Importantly, it has a fixed resonance frequency when the DC splitting ratio is 3 dB. The measured optical responses of the resonator exhibit a high extinction ratio, exceeding 23 dB, and an effective half-wave voltage length V_π·L of 0.77 V·cm, suitable for CMOS compatibility. Microresonators with tunable coupling and a stable resonance frequency are expected to find application in nonlinear optical devices on LN-integrated optical platforms.

Broadband phase shifter based on SiN-MoS2 integrated racetrack resonator

As the critical device of microwave photonics and optical communication, the low-loss and high-efficiency optical phase shifter has attracted intense attention in photonic integrated circuits. However, most of their applications are restricted to a particular band. Little is known about the characteristics of broadband. In this paper, an SiN-MoS₂ integrated broadband racetrack phase shifter is demonstrated. The coupling region and the structure of the racetrack resonator are elaborately designed to improve the coupling efficiency at each resonance wavelength. The ionic liquid is introduced to form a capacitor structure. Then, the effective index of the hybrid waveguide can be efficiently tuned by adjusting the bias voltage. We achieve a phase shifter with a tunable range covering all the WDM bands and even up to 1900 nm. The highest phase tuning efficiency is measured to be 72.75 pm/V at 1860 nm, and the corresponding half-wave-voltage-length product is calculated as 0.0608 V·cm.

Integrated Multiresonator Quantum Memory

We develop an integrated efficient multiresonator quantum memory scheme based on a system of three interacting resonators coupled through a common resonator to an external waveguide via switchable coupler. It is shown that high-precision parameter matching based on step-by-step optimization makes it possible to efficiently store the signal field and enables on-demand retrieval of the signal at specified time moments. Possible experimental implementations and practical applications of the proposed quantum memory scheme are discussed.

Ultrafast tunable lasers using lithium niobate integrated photonics

Early works1 and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits2,3, modulators with improved half-wave voltage4,5, electro-optic frequency combs6 and on-chip electro-optic devices, with applications ranging from microwave photonics to microwave-to-optical quantum interfaces7. Although recent advances have demonstrated tunable integrated lasers based on LiNbO3 (refs. 8,9), the full potential of this platform to demonstrate frequency-agile, narrow-linewidth integrated lasers has not been achieved. Here we report such a laser with a fast tuning rate based on a hybrid silicon nitride (Si3N4)-LiNbO3 photonic platform and demonstrate its use for coherent laser ranging. Our platform is based on heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 through direct bonding at the wafer level, in contrast to previously demonstrated chiplet-level integration10, featuring low propagation loss of 8.5 decibels per metre, enabling narrow-linewidth lasing (intrinsic linewidth of 3 kilohertz) by self-injection locking to a laser diode. The hybrid mode of the resonator allows electro-optic laser frequency tuning at a speed of 12 × 1015 hertz per second with high linearity and low hysteresis while retaining the narrow linewidth. Using a hybrid integrated laser, we perform a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment. Endowing Si3N4 photonic integrated circuits with LiNbO3 creates a platform that combines the individual advantages of thin-film LiNbO3 with those of Si3N4, which show precise lithographic control, mature manufacturing and ultralow loss11,12.

Integratable electro-optic modulator based on a polymer-embedded silicon racetrack resonator with high electro-optic wavelength tuning

Electro-optic (EO) modulators based on polymer-embedded silicon racetrack resonators (EOM-PSRR) are investigated. To obtain the single-mode propagation condition, the mode and transmission characteristics of the polymer-embedded silicon waveguide are simulated by the finite element method (FEM). By adding a static bias voltage, the EO modulation performances of EOM-PSRR embedded with lithium niobate (LiNbO₃), EO polymer (AJ309), and hybrid EO polymer/TiO₂ material (HEOT) are studied. The results show that the EOM-PSRR embedded with LiNbO₃ achieves a high modulation depth (MD) of ∼27.6dB with a low EO wavelength tuning (λ_EO) of 10 pm/V. However, the EOM-PSRR embedded with HEOT has a high λ_EO of 100 pm/V but a low MD of ∼6.2dB with an extinction ratio of ∼5.2dB. The EOM-PSRR has potential application prospects in optical communication, optical signal processing, and optical network links. It can be produced as an optical frequency comb generator in a dense wavelength division multiplexing system, an EO frequency shifter for laser beams, an optical soliton former, and a photon time-delay device in a phased array radar.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Advances in integrated ultra-wideband electro-optic modulators [Invited]

Increasing data traffic and bandwidth-hungry applications require electro-optic modulators with ultra-wide modulation bandwidth for cost-efficient optical networks. Thus far, integrated solutions have emerged to provide high bandwidth and low energy consumption in compact sizes. Here, we review the design guidelines and delicate structures for higher bandwidth, applying them to lumped-element and traveling-wave electrodes. Additionally, we focus on candidate material platforms with the potential for ultra-wideband optical systems. By comparing the superiority and mechanism limitations of different integrated modulators, we design a future roadmap based on the recent advances.

MoS2 hybrid integrated micro-ring resonator phase shifter based on a silicon nitride platform

We demonstrate a low-power, compact micro-ring phase shifter based on hybrid integration with atomically thin two-dimensional layered materials, and experimentally establish a low-loss silicon nitride platform. Using a wet transfer method, a large-area few-layer MoS₂ film is hybrid integrated with a micro-ring phase shifter, leading to a tuning efficiency of 5.8 pm V^-1 at a center wavelength of 1545.294 nm and a half-wave-voltage-length product as low as 0.09 V cm. Our device is designed to provide a hybrid-integration-based active phase modulation scheme for integrated optical communication networks with large-cross-section silicon nitride waveguides.

Si racetrack optical modulator based on the III-V/Si hybrid MOS capacitor

We have fabricated a Si racetrack optical modulator based on a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitor. The III-V/Si hybrid MOS optical phase shifter was integrated to a Si racetrack resonator with a coupling length of 200 µm and a coupling gap of 700 nm. The fabricated Si racetrack resonator demonstrated a small VπL of 0.059 Vcm. For 10-dB optical intensity modulation, the Si racetrack resonator showed a 60% smaller driving voltage than a Mach-Zehnder interferometer modulator with the same phase shifter, leading to a better balance between high energy efficiency and large modulation bandwidth.

Microstructure and domain engineering of lithium niobate crystal films for integrated photonic applications

Recently, integrated photonics has attracted considerable interest owing to its wide application in optical communication and quantum technologies. Among the numerous photonic materials, lithium niobate film on insulator (LNOI) has become a promising photonic platform owing to its electro-optic and nonlinear optical properties along with ultralow-loss and high-confinement nanophotonic lithium niobate waveguides fabricated by the complementary metal-oxide-semiconductor (CMOS)-compatible microstructure engineering of LNOI. Furthermore, ferroelectric domain engineering in combination with nanophotonic waveguides on LNOI is gradually accelerating the development of integrated nonlinear photonics, which will play an important role in quantum technologies because of its ability to be integrated with the generation, processing, and auxiliary detection of the quantum states of light. Herein, we review the recent progress in CMOS-compatible microstructure engineering and domain engineering of LNOI for integrated lithium niobate photonics involving photonic modulation and nonlinear photonics. We believe that the great progress in integrated photonics on LNOI will lead to a new generation of techniques. Thus, there remains an urgent need for efficient methods for the preparation of LNOI that are suitable for large-scale and low-cost manufacturing of integrated photonic devices and systems.

TE/TM-pass polarizers based on lateral leakage in a thin film lithium niobate-silicon nitride hybrid platform

TE/TM-pass polarizers based on the lithium niobate-silicon nitride hybrid platform are numerically proposed for the first time, to the best of our knowledge. By utilizing the lateral leakage of a shallowly etched rib waveguide, 1-mm-long TE/TM-pass polarizers with high extinction ratios of 28.72/24.03 dB are obtained. Because of the anisotropy of the lithium niobate, the lateral leakage of TE/TM polarization modes can occur along crystallographic z/y directions, respectively. Such TE/TM-pass polarizers can be integrated in the same wafer.

Subvolt electro-optical modulator on thin-film lithium niobate and silicon nitride hybrid platform

A low voltage operation electro-optic modulator is critical for applications ranging from optical communications to an analog photonic link. This paper reports a hybrid silicon nitride and lithium niobate electro-optic Mach-Zehnder modulator that employs 3 dB multimode interference couplers for splitting and combining light. The presented amplitude modulator with an interaction region length of 2.4 cm demonstrates a DC half-wave voltage of only 0.875 V, which corresponds to a modulation efficiency per unit length of 2.11 V cm. The power extinction ratio of the fabricated device is approximately 30 dB, and the on-chip optical loss is about 5.4 dB.