On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with [Formula: see text] and [Formula: see text] polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

11.2 Gbps 100-meter free-space visible light laser communication utilizing bidirectional reservoir computing equalizer

In this paper, we introduce an innovative post-equalization technique leveraging bidirectional reservoir computing (BiRC), and apply it to waveform-to-symbol level equalization for visible light laser communication for the first time. This strategy is more resistant to nonlinearities compared to traditional equalizers like least mean square (LMS) equalizer, while requiring less training time and fewer parameters than neural network (NN) -based equalizers. Through this approach, we successfully conduct a 100-meter transmission of a 32-amplitude phase shift keying (32APSK) signal using a green laser operating at a wavelength of 520 nm. Remarkably, our system achieves a high data rate of 11.2 Gbps, all while maintaining a satisfying bit error rate (BER) below the 7% hard decision forward error correction (HD-FEC) threshold of 3.8E-3.

Technological Breakthroughs in Chip Fabrication, Transfer, and Color Conversion for High-Performance Micro-LED Displays

The implementation of high-efficiency and high-resolution displays has been the focus of considerable research interest. Recently, micro light-emitting diodes (micro-LEDs), which are inorganic light-emitting diodes of size <100 µm2 , have emerged as a promising display technology owing to their superior features and advantages over other displays like liquid crystal displays and organic light-emitting diodes. Although many companies have introduced micro-LED displays since 2012, obstacles to mass production still exist. Three major challenges, i.e., low quantum efficiency, time-consuming transfer, and complex color conversion, have been overcome with technological breakthroughs to realize cost-effective micro-LED displays. In the review, methods for improving the degraded quantum efficiency of GaN-based micro-LEDs induced by the size effect are examined, including wet chemical treatment, passivation layer adoption, LED structure design, and growing LEDs in self-passivated structures. Novel transfer technologies, including pick-up transfer and self-assembly methods, for developing large-area micro-LED displays with high yield and reliability are discussed in depth. Quantum dots as color conversion materials for high color purity, and deposition methods such as electrohydrodynamic jet printing or contact printing on micro-LEDs are also addressed. This review presents current status and critical challenges of micro-LED technology and promising technical breakthroughs for commercialization of high-performance displays.

MicroLED/LED electro-optical integration techniques for non-display applications

MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low cost, and long lifetime. These characteristics are highly desirable in various applications, but their usage has, to date, been primarily focused toward next-generation display technologies. Applications of microLEDs in other technologies, such as projector systems, computational imaging, communication systems, or neural stimulation, have been limited. In non-display applications which use microLEDs as light sources, modifications in key electrical and optical characteristics such as external efficiency, output beam shape, modulation bandwidth, light output power, and emission wavelengths are often needed for optimum performance. A number of advanced fabrication and processing techniques have been used to achieve these electro-optical characteristics in microLEDs. In this article, we review the non-display application areas of the microLEDs, the distinct opto-electrical characteristics required for these applications, and techniques that integrate the optical and electrical components on the microLEDs to improve system-level efficacy and performance.

Recent Advances in Micro-LEDs Having Yellow-Green to Red Emission Wavelengths for Visible Light Communications

Visible light communication (VLC), which will primarily support high-speed internet connectivity in the contemporary world, has progressively come to be recognized as a significant alternative and reinforcement in the wireless communication area. VLC has become more popular recently because of its many advantages over conventional radio frequencies, including a higher transmission rate, high bandwidth, low power consumption, fewer health risks, and reduced interference. Due to its high-bandwidth characteristics and potential to be used for both illumination and communications, micro-light-emitting diodes (micro-LEDs) have drawn a lot of attention for their use in VLC applications. In this review, a detailed overview of micro-LEDs that have long emission wavelengths for VLC is presented, along with their related challenges and future prospects. The VLC performance of micro-LEDs is influenced by a number of factors, including the quantum-confined Stark effect (QCSE), size-dependent effect, and droop effect, which are discussed in the following sections. When these elements are combined, it has a major impact on the performance of micro-LEDs in terms of their modulation bandwidth, wavelength shift, full-width at half maximum (FWHM), light output power, and efficiency. The possible challenges faced in the use of micro-LEDs were analyzed through a simulation conducted using Crosslight Apsys software and the results were compared with the previous reported results. We also provide a brief overview of the phenomena, underlying theories, and potential possible solutions to these issues. Furthermore, we provide a brief discussion regarding micro-LEDs that have emission wavelengths ranging from yellow-green to red colors. We highlight the notable bandwidth enhancement for this paradigm and anticipate some exciting new research directions. Overall, this review paper provides a brief overview of the performance of VLC-based systems based on micro-LEDs and some of their possible applications.

Vertical stack integration of blue and yellow InGaN micro-LED arrays for display and wavelength division multiplexing visible light communication applications

In this work, we demonstrated a convenient and reliable method to realize the vertical stack integration of the blue and yellow InGaN micro-LED arrays. The standard white and color-tunable micro-light sources can be achieved by adjusting the current densities injection of the micro-LEDs. The spectra cover violet, standard white, cyan, etc., showing an excellent color-tunable property. And the mixed standard white light can be separated into red-green-blue three primary colors through the color filters to realize full-color micro-LED display with a color gamut of 75% NTSC. Besides, the communication capability of the integrated micro-LED arrays as visible light communication (VLC) transmitters is demonstrated with a maximum total data rate of 2.35 Gbps in the wavelength division multiplexing (WDM) experimental set-up using orthogonal frequency division multiplexing modulation. In addition, a data rate of 250 Mbps is also realized with the standard white light using on-off keying (OOK) modulation. This integrated device shows great potential in full-color micro-LED display, color-tunable micro-light sources, and high-speed WDM VLC multifunctional applications.

On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties

In this report, the impact of different mesa designs on the optical and electrical characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically and numerically investigated by using TCAD simulation tools. Our results show that an enhanced light extraction efficiency can be obtained by using beveled mesas. The inclined mesa angles can more effectively reflect the photons to the substrate, and this helps to extract the photons to free air for flip-chip µLEDs. However, it is found that the current injection is influenced by inclination angles for the investigated µLEDs, such that the beveled mesas make stronger charge-coupling effect and increase the electric field magnitude in the multiple quantum wells at the mesa edge, so that the carriers cannot be effective consumed by radiative recombination. As a result, this gives rise to stronger defect-induced nonradiative recombination at mesa surfaces. Therefore, there are tradeoffs between the LEEs and IQEs when changing the beveled angle, to maximize external quantum efficiency for GaN-based µLEDs, the beveled mesa angle shall be carefully designed and optimized.

Micro-LED with red-green-blue super-pixel integration for simultaneous display and optical near field communication

This work presents a novel all-in-one Micro-LED pixel (µLEDP) technology by integrating red-green-blue super-pixels (RGBSP) in a single unit cell. Measurement results show that the proposed µLEDP delivers excellent optical and electrical characteristics, including wide color gamut (109% NTSC), wide correlated color temperature range (2831.7-10016.8 K), and high modulation system bandwidth (58-62 MHz). To the best of our knowledge, the proposed integrated µLEDP achieves the highest data rate compared to published results based on other multi-color low-capacitance high-bandwidth LEDs. The maximum simulated non-return-to-zero (NRZ) and 4-level pulse-amplitude-modulation (PAM-4) data rates of 0.3-Gb/s and 1.1-Gb/s, respectively.

Net 4 Gb/s underwater optical wireless communication system over 2 m using a single-pixel GaN-based blue mini-LED and linear equalization

High-bandwidth GaN-based mini-LEDs on the c-sapphire substrate are promising candidates for underwater optical wireless communication (UOWC) systems due to their compatibility with the mature LED fabrication process. Here we fabricate and characterize mini-LEDs based on a single-layer InGaN active region with a peak emission wavelength around 484 nm for high-speed UOWC links. Since the LED diameter affects the trade-off between the modulation bandwidth and the optical modulation amplitude, mini-LEDs with varying mesa diameters from 100 µm to 175 µm are fabricated for the measurement. The 150 µm mini-LED with a 3-dB optical bandwidth of 906 MHz performs the best and enables the transmission of a net 4 Gb/s PAM-4 signal over 2 m of underwater distance using only linear equalization. This UOWC system has achieved, to the best of our knowledge, the highest net data rate and the highest data-rate-distance product based on a single-pixel mini-LED.

Gradients in Three-Dimensional Core-Shell GaN/InGaN Structures: Optimization and Physical Limitations

Three-dimensional InGaN/GaN nano- and microstructures with high aspect ratios and large active sidewall areas are still of great interest in the field of optoelectronics. However, when grown by metalorganic chemical vapor deposition (MOCVD), their optical performance can be negatively affected by gradients in thickness and peak emission wavelength along their sidewalls, which is still a key obstacle for using such structures in commercial products. In this work, we present a detailed study on the different mechanisms causing this gradient, as well as means to alleviate it. Gas-phase mass transport and surface diffusion are found to be the two main processes governing the shell growth, and the predominance of one process over the other is varying with the geometry of the 3D structures as well as the spacing between them. Consequently, variations in temperature, which mainly affect surface diffusion, will have a stronger impact on structures with small separation between them rather than larger ones. On the other hand, variations in pressure modify gas-phase diffusion, and thus, structures with a large spacing will be more strongly affected. A proper design of the dimensions of 3D architectures as well as the separation between them may improve the gradient along the sidewalls, but a tradeoff with the active area per wafer footprint is inevitable.

High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m2

High brightness Si nanocrystal white light-emitting diodes (WLED) based on differentially passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing freestanding SiNCs with hydrogen silsesquioxane, followed by annealing at moderately high temperatures, which finally led to a continuous spectral light emission covering red, green and blue regimes. The photoluminescence quantum yield (PLQY) of the active layer was 11.4%. The SiNC WLED was composed of a front electrode, electron transfer layer, front charge confinement layer, highly luminescent active layer, rear charge confinement layer, hole transfer layer, textured p-type Si substrate and aluminum rear electrode from top to bottom. The peak luminance of the SiNC WLED achieved was 2060 cd/m². The turn-on voltage was 3.7 V. The chromaticity of the SiNC WLED indicated white light emission that could be adjusted by changing the annealing temperature of the active layer with color temperatures ranging from 3686 to 5291 K.

2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm² along with a red-shift of the peak position from 624.69 to 627.12 nm (Δλ = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output.

848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production

In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and a pixel density of 848 pixels per inch (ppi), was fabricated and integrated with a custom-designed CMOS driver through Au-Sn flip-chip bonding. Si growth substrate was removed using a crack-free wet etching method. Four-bit grayscale images and videos are clearly rendered. Optical crosstalk is discussed and can be mitigated through micro-LED array design and process modification. This high-performance, high-resolution micro-LED display demonstration provides a promising and cost-effective solution towards mass production of micro-displays for VR/AR applications.

Micro-LED as a Promising Candidate for High-Speed Visible Light Communication

Visible Light Communication (VLC) technology is an emerging technology using visible light modulation that, in the modern world, will mainly facilitate high-speed internet connectivity. VLC provides tremendous advantages compared to conventional radio frequency, such as a higher transmission rate, high bandwidth, low-power consumption, no health hazards, less interference, etc., which make it more prominent in recent days. Due to their outstanding features, including low cost, low power consumption, etc., µ-light-emitting diodes (LEDs) have gained considerable attention for VLC implementation, but mostly for the ability to be used for lighting as well as communications. In this review paper, we will focus mainly on recent developments in VLC applications and various factors affecting the modulation bandwidth of VLC devices. Numerous factors, such as quantum confined stark effect (QCSE), carrier lifetime, carrier recombination time, crystal orientation, etc. affect the modulation bandwidth of LEDs, and more information will be discussed in the following sections. This paper will focus on VLC applications based on LEDs but mainly on semipolar μ-LEDs and μ-LED-based arrays with high bandwidths. Another important application of VLC is underwater optical wireless communication (UOWC), which has drawn a huge interest in marine exploration and underwater connectivity, but still faces some challenges because visible light is being used. In addition, this paper will focus on how the current VLC system modulation bandwidth can be enhanced. Many methods have been introduced, such as decreasing the active layer thickness or effective active area or using doping, but the bandwidth is restricted by the recombination time when the system configuration reaches its limit. Therefore, it is important to find alternative ways such as optimizing the system, using the blue filter or using the equalization technology, which will be addressed later. Overall, this review paper provides a brief overview of the VLC-based system performance and some of its potential prospects.

Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glass

Full-color smart displays, which act both as a display and as a high-speed visible light communication (VLC) transmitter, can be realized by the integration of red-green-blue micron-sized light emitting diodes (micro-LEDs) onto a common platform. In this work, we report on the integration of aluminum gallium indium phosphide red micro-LEDs onto diamond and glass substrates by micro-transfer printing and their application in VLC. The device on-diamond exhibits high current density and bandwidth operation, enabled by diamond's superior thermal properties. Employing an orthogonal frequency division multiplexing modulation scheme, error-free data rates of 2.6 Gbps and 5 Gbps are demonstrated for a single micro-LED printed on-glass and on-diamond, respectively. In a parallel configuration, a 2x1 micro-LED array achieves error-free data rates of 3 Gbps and 6.6 Gbps, on-glass and on-diamond, respectively.

Direct integration of micro-LEDs and a SPAD detector on a silicon CMOS chip for data communications and time-of-flight ranging

We present integration of singulated micron-sized light emitting diodes (micro-LEDs) directly onto a silicon CMOS drive chip using a transfer printing method. An 8x8 micro-LED device array with individual control over each pixel is demonstrated with modulation bandwidths up to 50 MHz, limited by the large modulation depth of the driver chip. The 2 kHz frame rate CMOS driver also incorporates a Single Photon Avalanche Diode device thus allowing detection and transmission functionality on a single integrated chip. Visible light communications at data rates up to 1 Mbps, and time-of-flight ranging with cm-scale resolution are demonstrated using this hybrid integrated system.