Anisotropic Raman scattering and intense broadband second-harmonic generation in tellurium nanosheets

Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors

There is an increasing demand for p-type semiconductors with scalable growth, excellent device performance, and back-end-of-line (BEOL) compatibility. Recently, tellurium (Te) has emerged as a promising candidate due to its appealing electrical properties and potential low-temperature production. So far, nearly all of the scalable production and integration of Te with complementary metal oxide semiconductor (CMOS) technology have been based on physical vapor deposition. Here we demonstrate wafer-scale atomic layer-deposited (ALD) TeOx/Te heterostructure thin-film transistors with high uniformity and integration compatibility. The wafer-scale uniformity of the film is evidenced by spatial Raman mappings and statistical electrical analysis. Furthermore, surface accumulation-induced good ohmic contact has been observed and explained by the unique band alignment of the charge neutrality level inside the Te valence band. These results demonstrate ALD TeOx/Te as a promising p-type semiconductor for monolithic three-dimensional integration in BEOL CMOS applications incorporated with well-established n-type ALD oxide semiconductors.

Wide-Field Polarimetric Second-Harmonic Imaging for Rapid and Nondestructive Investigation of Laser-Induced Crystallization Phenomena

The selective and controlled formation of nanocrystals in glass is emerging as a versatile method to achieve functional photonics, optoelectronics, and quantum devices, such as single-photon emitters. Here, we investigate the use of wide-field polarimetric second-harmonic (SH) microscopy as a method to rapidly and nondestructively examine nanoscale crystal arrangements in laser-processed glass. As a case study, we investigate tellurite glass, where the formation of a trigonal tellurium (t-Te) nanocrystalline phase after femtosecond laser exposure was recently demonstrated. Combined with theoretical models, we show that wide-field polarimetric SH microscopy offers comprehensive information on the nanocrystals' orientation, distribution, and chirality. With its high imaging throughput and spatial resolution, this method has the potential not only to significantly accelerate investigations on laser-induced glass crystallization processes but also to provide a valuable tool for in situ process monitoring.

Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics

Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.

Reduced graphene oxide doped tellurium nanotubes for high performance supercapacitor

Supercapacitors have been achieving great interest in energy storage systems for the past couple of decades. Such devices with superior performance, mainly, depending on the material architecture of the electrodes. We report on the preparation of Tellurium nanotubes (Te-tubes diameter ∼100 nm and length ∼700 nm), with variable doping of conducting network reduced graphene oxide (rGO) to fabricate high-performance electrode characteristics of rGO @ Te. The prepared material was characterized using XRD, FTIR, FESEM, and Raman spectroscopy techniques, including Brunauer-Emmett-Teller, Barrett-Joyner-Halenda measurements. FTIR study revealed that 15% rGO @ Te has a wide C-O vibration band at ∼ 1,100–1,300 cm⁻¹, over other compositions. FESEM study shows the Te-tubes dispersion in rGO layers. The EDX study revealed that 15% of the composition has an optimistic concentration of C and O elements. In other compositions, either at lower/higher rGO concentration, an uneven count of C and O is observed. These support efficient charge dynamics to achieve superior ultra-capacitor characteristics, thereby achieving specific capacitance C_sp 170 + F/g @ 10 mV/s in a symmetric configuration. The reported values are thirty times higher than pristine Te-tubes (∼5 F/g). This finding suggests that rGO @ Te is a promising candidate for supercapacitor.

Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Recently, as an elementary material, tellurium (Te) has received widespread attention for its high carrier mobility, intriguing topological properties, and excellent environmental stability. However, it is difficult to obtain two-dimensional (2D) Te with high crystalline quality owing to its intrinsic helical chain structure. Herein, a facile strategy for controllable synthesis of high-quality 2D Te nanoflakes through chemical vapor transport in one step is reported. With carefully tuning the growth kinetics determined mainly by temperature, tellurium nanoflakes in lateral size of up to ∼40 μm with high crystallinity can be achieved. We also investigated the second harmonic generation of Te nanoflakes, which demonstrates that it can be used as frequency doubling crystals and has potential applications in nonlinear optical devices. In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm² V⁻¹ s⁻¹.

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High-quality 2D Te nanoflakes were directly synthesized by CVT method

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The growth mechanisms of 2D Te nanoflakes were systematically studied

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2D Te nanoflakes have potential applications in nonlinear optical devices

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2D Te nanoflakes-based FETs exhibit high mobility of ∼379 cm² V⁻¹ s⁻¹