Enhanced Raman scattering from silicon microstructures

Low-Variance Surface-Enhanced Raman Spectroscopy Using Confined Gold Nanoparticles over Silicon Nanocones

Surface-enhanced Raman spectroscopy (SERS) substrates are of utmost interest in the analyte detection of biological and chemical diagnostics. This is primarily due to the ability of SERS to sensitively measure analytes present in localized hot spots of the SERS nanostructures. In this work, we present the formation of 67 ± 6 nm diameter gold nanoparticles supported by vertically aligned shell-insulated silicon nanocones for ultralow variance SERS. The nanoparticles are obtained through discrete rotation glancing angle deposition of gold in an e-beam evaporating system. The morphology is assessed through focused ion beam tomography, energy-dispersive X-ray spectroscopy, and scanning electron microscopy. The optical properties are discussed and evaluated through reflectance measurements and finite-difference time-domain simulations. Lastly, the SERS activity is measured by benzenethiol functionalization and subsequent Raman spectroscopy in the surface scanning mode. We report a homogeneous analytical enhancement factor of 2.2 ± 0.1 × 10⁷ (99% confidence interval for N = 400 grid spots) and made a comparison to other lithographically derived assemblies used in SERS. The strikingly low variance (4%) of our substrates facilitates its use for many potential SERS applications.

Spontaneous Light Emission Assisted by Mie Resonances in Diamond Nanoparticles

Spontaneous light emission is known to be affected by the local density of states and enhanced when coupled to a resonant cavity. Here, we report on an experimental study of silicon-vacancy (SiV) color center fluorescence and spontaneous Raman scattering from subwavelength diamond particles supporting low-order Mie resonances in the visible range. For the first time to our knowledge, we have measured the size dependences of the SiV fluorescence emission rate and the Raman scattering intensity from individual diamond particles in the range from 200 to 450 nm. The obtained dependences reveal a sequence of peaks, which we explicitly associate with specific multipole resonances. The results are in agreement with our theoretical analysis and highlight the potential of intrinsic optical resonances for developing nanodiamond-based lasers and single-photon sources.

Silicon Microchannel-Driven Raman Scattering Enhancement to Improve Gold Nanorod Functions as a SERS Substrate toward Single-Molecule Detection

The investigation of enhanced Raman signal effects and the preparation of high-quality, reliable surface-enhanced Raman scattering (SERS) substrates is still a hot topic in the SERS field. Herein, we report an effect based on the shape-induced enhanced Raman scattering (SIERS) to improve the action of gold nanorods (AuNRs) as a SERS substrate. Scattered electric field simulations reveal that bare V-shaped Si substrates exhibit spatially distributed interference patterns from the incident radiation used in the Raman experiment, resulting in constructive interference for an enhanced Raman signal. Experimental data show a 4.29 increase in Raman signal intensity for bare V-shaped Si microchannels when compared with flat Si substrates. The combination of V-shaped microchannels and uniform aggregates of AuNRs is the key feature to achieve detections in ultra-low concentrations, enabling reproducible SERS substrates having high performance and sensitivity. Besides SIERS effects, the geometric design of V-shaped microchannels also enables a "trap" to the molecule confinement and builds up an excellent electromagnetic field distribution by AuNR aggregates. The statistical projection of SERS spectra combined with the SIERS effect displayed a silhouette coefficient of 0.83, indicating attomolar (10^-18 mol L^-1) detection with the V-shaped Si microchannel.

Probing optical resonances of silicon nanostructures using tunable-excitation Raman spectroscopy

Optical materials with a high refractive index enable effective manipulation of light at the nanoscale through strong light confinement. However, the optical near field, which is mainly confined inside such high-index nanostructures, is difficult to probe with existing measurement techniques. Here, we exploit the connection between Raman scattering and the stored electric energy to detect resonance-induced near-field enhancements in silicon nanostructures. We introduce a Raman setup with a wavelength-tunable laser, which allows us to tune the Raman excitation wavelength and thereby identify Fabry-Pérot and Mie type resonances in silicon thin films and nanodisk arrays, respectively. We measure the optical near-field enhancement by comparing the Raman response on and off resonance. Our results show that tunable-excitation Raman spectroscopy can be used as a complimentary far-field technique to reflection measurements for nanoscale characterization and quality control. As proof-of-principle for the latter, we demonstrate that Raman spectroscopy captures fabrication imperfections in the silicon nanodisk arrays, enabling an all-optical quality control of metasurfaces.

Fourier transform study of the complex electric field induced on axially heterostructured nanowires

We present in this work a study of the effect of Raman enhancement on axially heterostructured semiconductor nanowires (NWs). The investigation is motivated by the recent detection of a Raman signal enhancement effect at the heterojunction (HJ) of axially heterostructured NWs. Semiconductor NWs offer very interesting properties as compared to their bulk counterparts, making them the building blocks of future optoelectronic nanodevices. The use of HJs turns out to be essential for a great variety of devices. As a result, understanding the optical properties of heterostructured NWs is a fundamental step for their possible application on future technologies. In order to unveil the underlying physics of the light/NW interaction, the complex-valued electromagnetic (EM) field distribution induced inside heterostructured NWs under light exposure is studied. The use of the Fourier transform is presented as a key tool in order to ascertain the different components of the EM field generated inside the NW. The results show the presence of two components: one associated with the incident light beam and a second one which appears as a consequence of the presence of the axial HJ. This second component explains the emergence of the Raman enhancement effect as a result of the interaction of the incident beam with the dielectric discontinuity associated with the HJ.

Resonant Raman scattering from silicon nanoparticles enhanced by magnetic response

Enhancement of optical response with high-index dielectric nanoparticles is attributed to the excitation of their Mie-type magnetic and electric resonances. Here we study Raman scattering from crystalline silicon nanoparticles and reveal that magnetic dipole modes have a much stronger effect on the scattering than electric modes of the same order. We demonstrate experimentally a 140-fold enhancement of the Raman signal from individual silicon spherical nanoparticles at the magnetic dipole resonance. Our results confirm the importance of the optically-induced magnetic response of subwavelength dielectric nanoparticles for enhancing light-matter interactions.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiO_x (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO₂ phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO₂. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Silicon nanoparticles as Raman scattering enhancers

In this communication we demonstrate the large amplification values of the Raman signal of organic molecules attached to silicon nanoparticles (SiNPs). Light induced Mie resonances of high refractive index particles generate strong evanescent electromagnetic (EM) fields, thus boosting the Raman signal of species attached to the nanoparticles. The interest of this process is justified by the wide range of experimental configurations that can be implemented including photonic crystals, the sharp spectral resonances easily tuneable with the particle size, the biocompatibility and biodegradability of silicon, and the possibility of direct analysis of molecules that do not contain functional groups with high affinity for gold and silver. Additionally, silicon nanoparticles present stronger field enhancement due to Mie resonances at larger sizes than gold.

Retardation assisted enhanced Raman scattering from silicon nanostripes in the visible range

Patterned silicon on insulator structures representing evenly spaced parallel 15 nm-thick nanostripes exhibit an enhanced Raman scattering response when excited in the visible range in an oblique incidence backscattering configuration. The enhancement phenomenon in two structures having different stripe widths, 200 and 50 nm, is investigated at various sample azimuthal orientations, excitation radiation polarizations as well as laser wavelengths and is shown to be of resonant nature. The enhanced Raman response of the patterned structures is attributed to the presence of Mie resonances, essentially resulting in the enhancement of the internal electric field within the nanostripes. It is quantitatively described in terms of the spheroid particle model extended beyond the electrostatic limit to include field retardation effects that are shown to be responsible for the resonant behaviour in the visible range.

Scalable Fabrication and Optical Characterization of Nm Si Structures

Observations of efficient room temperature photoluminescence (PL) from porous Si have generated a great deal of interest in the optical properties of nm-scale Si structures. The stochastic character of porous-Si fabrication results in a distribution of crystal sizes and shapes. We report on a scalable (to large areas) and manufacturable (to high volumes) fabrication technology for uniform, nm-linewidth Si structures providing an important testbed for controlled studies of these optical properties. Large areas ( ∼ 1 cm2) of extreme sub-μm structures (to ∼ 5 nm) are re-producibly fabricated. Both walls (1-D confinement) and wires (2-D confinement) are reported. The fabrication process includes: interferometric lithography, highly anisotropic KOH etching, and structure dependent oxidation. For the walls, nearly perfect <111> crystal planes form the sidewalls and very high width/depth aspect ratios (> 50) have been achieved. Raman scattering results on the walls demonstrate three regimes: 1) lineshapes and cross sections similar to bulk Si for line widths, W > 200 nm; 2) electromagnetic resonance enhancement of the cross section ( to - 100x) for W from 50-200 nm; and 3) highly asymmetric lineshapes and splittings from W < 30 nm. Photoluminescence is observed for the thinnest samples (W < 10 nm) and is as intense as that observed from porous Si with a spectral linewidth ∼ 50 % smaller than that of porous Si.

Enhanced Raman scattering from individual semiconductor nanocones and nanowires

We report strong enhancement (approximately 10(3)) of the spontaneous Raman scattering from individual silicon nanowires and nanocones as compared with bulk Si. The observed enhancement is diameter (d), excitation wavelength (lambda(laser)), and incident polarization state dependent, and is explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross section. The variation of the Raman enhancement with d, lambda(laser), and polarization is shown to be in good agreement with model calculations of scattering from an infinite dielectric cylinder.