Origin of trace organic contaminants adsorbed on the surface of silicon wafers in a manufacturing line

Surface cleaning of germanium nanodot ionization substrate for surface-assisted laser desorption/ionization mass spectrometry

In surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS), a chemical background signal, arising from organic contaminants such as plasticizers, is frequently observed mainly under m/z ca. 600, which impairs the advantages of the matrix-free approach. Silver salts, which are used for the cationization of aromatic compounds, are also difficult to remove completely after the measurements. In this study, surface cleaning techniques used in semiconductor processing were used to clean our developed silicon-based SALDI substrate on which self-assembled germanium nanodots (GeNDs) had been deposited (termed a GeND chip). An immersion cleaning method using acetone with sonication, and a sulfuric-peroxide mixture (SPM) cleaning method using a mixture of H(2)SO(4)/H(2)O(2)/deionized water, were examined for their effectiveness in removing organic compounds and residual silver salts. Removal of both types of contaminants was successfully performed by SPM cleaning. The limit of detection for glutathione was improved from ca. 5 pmol without cleaning to ca. 50 fmol after the SPM cleaning. Since GeND chips can tolerate acidic cleaning and sonication due to their chemical inertness and rigid nanodot structures, they appear to be an ideal reusable SALDI substrate.

Direct quantitative analysis of phthalate esters as micro-contaminants in cleanroom air and wafer surfaces by auto-thermal desorption–gas chromatography–mass spectrometry

This study established an analytical method for the trace analyses of two phthalate esters, including diethyl phthalate (DEP) and di-n-butyl phthalate (DBP), known as the major constituents of cleanroom micro-contamination detrimental to the reliability of semiconductor devices. Using thermal desorption coupled with a GC-MS system, standard tubes were prepared by delivering liquid standards pre-vaporized by a quasi-vaporizer into Tenax GR tubes for calibration. This method was capable of achieving detection limits of 0.05 microg m(-3) for 0.1 m3 air samples and 0.03 ng cm(-2) for 150-mm wafer surface density. Actual samples collected from a semiconductor cleanroom showed that the concentration of DBP in a polypropylene wafer box (0.45 microg m(-3)) was nearly four times higher than that in the cleanroom environment (0.12 microg m(-3)). The surface contamination of DBP was 0.67 ng cm(-2) for a wafer stored in the wafer box for 24 h. Furthermore, among the three types of heat-resistant O-ring materials tested, Kalrez was found to be particularly suitable for high-temperature processes in semiconductor cleanrooms due to their low emissions of organic vapors. This analytical procedure should serve as an effective monitoring method for the organic micro-contamination in cleanroom environments.