Effect of Magnesium Incorporation on Solution-Processed Kesterite Solar Cells

Structure-Property Correlations in CZTSe Domains within Semiconductor Nanocrystals as Photovoltaic Absorbers

Semiconductor nanocrystals (NCs) are promising materials for various applications. Two of four recently identified CuαZnβSnγSeδ (CZTSe) domains demonstrate metallic character, while the other two exhibit semiconductor character. The presence of both metallic and semiconductor domains in one NC can hugely benefit future applications. In contrast to traditional band gap studies in the NC community, this study emphasizes that NC domain interfaces also affect the electronic properties. Specifically, the measured band gap of a tetrapod-shaped CZTSe NC is demonstrated to originate from two specific domains (tetragonal I4 ¯ $\bar 4$ and monoclinic P1c1 Cu2ZnSnSe4). The heterojunction between these two semiconductor domains exhibits a staggered type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. Interestingly, tetrapod NCs have the potential to be efficient absorber materials with higher capacitance in photovoltaic applications due to the presence of both semiconductor/semiconductor interfaces and metal/semiconductor "Schottky"-junctions. For the two photo-absorbing domains, the calculated absorption spectra yield maximum photon-absorption coefficients of about 105 cm-1 in the visible and UV regions and a theoretical solar power conversion efficiency up to 20.8%. These insights into the structure-property relationships in CZTSe NCs will guide the design of more efficient advanced optical CZTSe materials for various applications.

Improving Carrier-Transport Properties of CZTS by Mg Incorporation with Spray Pyrolysis

High nonradiative recombination, low diffusion length and band tailing are often associated with a large open circuit voltage deficit, which results in low efficiency of Cu₂ZnSnS₄ (CZTS) solar cells. Recently, cation substitution in CZTS has gained interest as a plausible solution to suppress these issues. However, the common substitutes, Ag and Cd, are not ideal due to their scarcity and toxicity. Other transition-metal candidates (e.g., Mn, Fe, Co, or Ni) are multivalent, which may form harmful deep-level defects. Magnesium, as one of the viable substitutes, does not have these issues, as it is very stable in +2 oxidation state, abundant, and nontoxic. In this study, we investigate the effect of Mg incorporation in sulfur-based Cu₂ZnSnS₄ to form Cu₂Mg_xZn_1-xSnS₄ by varying x from 0.0 to 1.0. These films were fabricated by chemical spray pyrolysis and the subsequent sulfurization process. At a high Mg content, it is found that Mg does not replace Zn to form a quaternary compound, which leads to the appearance of the secondary phases in the sample. However, a low Mg content (Cu₂Mg_0.05Zn_0.95SnS₄) improves the power conversion efficiency from 5.10% (CZTS) to 6.73%. The improvement is correlated to the better carrier-transport properties, as shown by a lesser amount of the ZnS secondary phase, higher carrier mobility, and shallower acceptor defects level. In addition, the Cu₂Mg_0.05Zn_0.95SnS₄ device also shows better charge-collection property based on the higher fill factor and quantum efficiency despite having lower depletion width. Therefore, we believe that the addition of a small amount of Mg is another viable route to improve the performance of the CZTS solar cell.

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large open-circuit voltage (V_OC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se₂ technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.