Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

Measurement of electrostatic tip-sample interactions by time-domain Kelvin probe force microscopy

Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated. The resulting electrostatic force or force gradient is detected via lock-in techniques and canceled by adjusting the dc component of the tip-sample bias. This allows for an electrostatic characterization and simultaneously minimizes the electrostatic influence onto the topography measurement. However, a static contribution due to the bias modulation itself remains uncompensated, which can induce topographic height errors. Here, we demonstrate an alternative approach to find the surface potential without lock-in detection. Our method operates directly on the frequency-shift signal measured in frequency-modulated atomic force microscopy and continuously estimates the electrostatic influence due to the applied voltage modulation. This results in a continuous measurement of the local surface potential, the capacitance gradient, and the frequency shift induced by surface topography. In contrast to conventional techniques, the detection of the topography-induced frequency shift enables the compensation of all electrostatic influences, including the component arising from the bias modulation. This constitutes an important improvement over conventional techniques and paves the way for more reliable and accurate measurements of electrostatics and topography.

Towards standardisation of contact and contactless electrical measurements of CVD graphene at the macro-, micro- and nano-scale

Graphene has become the focus of extensive research efforts and it can now be produced in wafer-scale. For the development of next generation graphene-based electronic components, electrical characterization of graphene is imperative and requires the measurement of work function, sheet resistance, carrier concentration and mobility in both macro-, micro- and nano-scale. Moreover, commercial applications of graphene require fast and large-area mapping of electrical properties, rather than obtaining a single point value, which should be ideally achieved by a contactless measurement technique. We demonstrate a comprehensive methodology for measurements of the electrical properties of graphene that ranges from nano- to macro- scales, while balancing the acquisition time and maintaining the robust quality control and reproducibility between contact and contactless methods. The electrical characterisation is achieved by using a combination of techniques, including magneto-transport in the van der Pauw geometry, THz time-domain spectroscopy mapping and calibrated Kelvin probe force microscopy. The results exhibit excellent agreement between the different techniques. Moreover, we highlight the need for standardized electrical measurements in highly controlled environmental conditions and the application of appropriate weighting functions.

New Concepts for Production of Scalable Single Layer Oxidized Regions by Local Anodic Oxidation of Graphene

A deep comprehension of the local anodic oxidation process in 2D materials is achieved thanks to an extensive experimental and theoretical study of this phenomenon in graphene. This requires to arrange a novel instrumental device capable to generate separated regions of monolayer graphene oxide (GO) over graphene, with any desired size, from micrometers to unprecedented mm² , in minutes, a milestone in GO monolayer production. GO regions are manufactured by overlapping lots of individual oxide spots of thousands µm² area. The high reproducibility and circular size of the spots allows not only an exhaustive experimental characterization inside, but also establishing an original model for oxide expansion which, from classical first principles, overcomes the traditional paradigm of the water bridge, and is applicable to any 2D-material. This tool predicts the oxidation behavior with voltage and exposure time, as well as the expected electrical current along the process. The hitherto unreported transient current is measured during oxidation, gaining insight on its components, electrochemical and transport. Just combining electrical measurements and optical imaging estimating carrier mobility and degree of oxidation is possible. X-ray photoelectron spectroscopy reveals a graphene oxidation about 30%, somewhat lower to that obtained by Hummers' method.

Graphene-Modified ZnO Nanostructures for Low-Temperature NO2 Sensing

This paper develops a novel ultrasonic spray-assisted solvothermal (USS) method to synthesize wrapped ZnO/reduced graphene oxide (rGO) nanocomposites with a Schottky junction for gas-sensing applications. The as-obtained ZnO/rGO-x samples with different graphene oxide (GO) contents (x = 0-1.5 wt %) are characterized by various techniques, and their gas-sensing properties for NO₂ and other VOC gases are also evaluated. The results show that the USS-derived ZnO/rGO samples exhibit high NO₂-sensing property at low operating temperatures (e.g., 70-130 °C) because of their high specific surface area and porous structures when compared with the ZnO/rGO sample obtained by the traditional precipitation method. The content of rGO shows an obvious effect on their NO₂-sensing properties, and the ZnO/rGO-0.5 sample has a high response of 62 operating at 130 °C, three times that of pure ZnO. The detection limit of the ZnO/rGO-0.5 sensor to NO₂ is as low as 10 ppb under the present test condition. In addition, the ZnO/rGO-0.5 sensor shows a highly selective response to NO₂ gas when compared with organic vapors and other inflammable or toxic gases. The theoretical and experimental analyses indicate that the enhancement in NO₂-sensing performance of the ZnO/rGO sensor is attributed to the formation of wrapped ZnO/rGO Schottky junctions.

High refractive index in low metal content nanoplasmonic surfaces from self-assembled block copolymer thin films

Materials with a high and tunable refractive index are attractive for nanophotonic applications. In this contribution, we propose a straightforward fabrication technique of high-refractive index surfaces based on self-assembled nanostructured block copolymer thin films. The selective and customizable metal incorporation within out-of-plane polymer lamellae produces azimuthally isotropic metallic nanostructures of defined geometries, which were analysed using microscopy and small-angle X-ray scattering techniques. Variable-angle spectroscopic ellipsometry was used to relate the geometrical parameters of the metallic features and the resulting refractive index of the patterned surfaces. In particular, nanostructured gold patterns with a high degree of homogeneity and a gold content as low as 16 vol% reach a refractive index value of more than 3 in the visible domain. Our study thus demonstrates a new route for the preparation of high refractive index surfaces with a low metal content for optical applications.

Laser-Based Texturing of Graphene to Locally Tune Electrical Potential and Surface Chemistry

A simple procedure of producing three-dimensional blisters of graphene through irradiation of the visible range laser by Raman spectrometer has been presented. Fabrication of different volumes of the blisters and their characterization were carried out with Raman spectroscopy by tuning the irradiation dose. The produced blisters showed a consistency in altitude and a remarkable change in functionality, adhesion force map and local contact potential difference as compared to untreated monolayer graphene and naturally occurred graphene nanobubbles. Nevertheless, bilayer graphene is unaffected in the applied laser doses. The laser irradiation led to lattice expansion of carbon atoms and introduced oxygenic functional groups with the structural disorder. The internal pressure of the gaseous molecules was evaluated by monitoring the shape of the graphene blisters and nanobubbles. High-resolution Raman mapping showed the impact of laser-affected area and the defect density (n _d) is reported as a function of displacement. Our results reveal ease of applicability of the Raman laser for the imaging and texturing of graphene pointing toward the possibility of the desirable and cost-effective laser writing at the submicron scale by tuning photochemistry of graphene which is pivotal for numerous applications.

Mechanics of spontaneously formed nanoblisters trapped by transferred 2D crystals

Layered systems of 2D crystals and heterostructures are widely explored for new physics and devices. In many cases, monolayer or few-layer 2D crystals are transferred to a target substrate including other 2D crystals, and nanometer-scale blisters form spontaneously between the 2D crystal and its substrate. Such nanoblisters are often recognized as an indicator of good adhesion, but there is no consensus on the contents inside the blisters. While gas-filled blisters have been modeled and measured by bulge tests, applying such models to spontaneously formed nanoblisters yielded unrealistically low adhesion energy values between the 2D crystal and its substrate. Typically, gas-filled blisters are fully deflated within hours or days. In contrast, we found that the height of the spontaneously formed nanoblisters dropped only by 20-30% after 3 mo, indicating that probably liquid instead of gas is trapped in them. We therefore developed a simple scaling law and a rigorous theoretical model for liquid-filled nanoblisters, which predicts that the interfacial work of adhesion is related to the fourth power of the aspect ratio of the nanoblister and depends on the surface tension of the liquid. Our model was verified by molecular dynamics simulations, and the adhesion energy values obtained for the measured nanoblisters are in good agreement with those reported in the literature. This model can be applied to estimate the pressure inside the nanoblisters and the work of adhesion for a variety of 2D interfaces, which provides important implications for the fabrication and deformability of 2D heterostructures and devices.

Calibration of multi-layered probes with low/high magnetic moments

We present a comprehensive method for visualisation and quantification of the magnetic stray field of magnetic force microscopy (MFM) probes, applied to the particular case of custom-made multi-layered probes with controllable high/low magnetic moment states. The probes consist of two decoupled magnetic layers separated by a non-magnetic interlayer, which results in four stable magnetic states: ±ferromagnetic (FM) and ±antiferromagnetic (A-FM). Direct visualisation of the stray field surrounding the probe apex using electron holography convincingly demonstrates a striking difference in the spatial distribution and strength of the magnetic flux in FM and A-FM states. In situ MFM studies of reference samples are used to determine the probe switching fields and spatial resolution. Furthermore, quantitative values of the probe magnetic moments are obtained by determining their real space tip transfer function (RSTTF). We also map the local Hall voltage in graphene Hall nanosensors induced by the probes in different states. The measured transport properties of nanosensors and RSTTF outcomes are introduced as an input in a numerical model of Hall devices to verify the probe magnetic moments. The modelling results fully match the experimental measurements, outlining an all-inclusive method for the calibration of complex magnetic probes with a controllable low/high magnetic moment.

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.

Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600 °C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700 °C). The spatial homogeneity of the monolayer graphene was observed at 1750 °C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an A_G-graphene/A_G-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements from room temperature down to 1.7 K indicated slightly p-doped samples (p ≃ 10¹⁰ cm^-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films.

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.

Characteristic Work Function Variations of Graphene Line Defects

Line defects, including grain boundaries and wrinkles, are commonly seen in graphene grown by chemical vapor deposition. These one-dimensional defects are believed to alter the electrical and mechanical properties of graphene. Unfortunately, it is very tedious to directly distinguish grain boundaries from wrinkles due to their similar morphologies. In this report, high-resolution Kelvin potential force microscopy (KPFM) is employed to measure the work function distribution of graphene line defects. The characteristic work function variations of grain boundaries, standing-collapsed wrinkles, and folded wrinkles could be clearly identified. Classical and quantum molecular dynamics simulations reveal that the unique work function distribution of each type of line defects is originated from the doping effect induced by the SiO2 substrate. Our results suggest that KPFM can be an easy-to-use and accurate method to detect graphene line defects, and also propose the possibility to tune the graphene work function by defect engineering.

Visualization of Grain Structure and Boundaries of Polycrystalline Graphene and Two-Dimensional Materials by Epitaxial Growth of Transition Metal Dichalcogenides

The presence of grain boundaries in two-dimensional (2D) materials is known to greatly affect their physical, electrical, and chemical properties. Given the difficulty in growing perfect large single-crystals of 2D materials, revealing the presence and characteristics of grain boundaries becomes an important issue for practical applications. Here, we present a method to visualize the grain structure and boundaries of 2D materials by epitaxially growing transition metal dichalcogenides (TMDCs) over them. Triangular single-crystals of molybdenum disulfide (MoS2) epitaxially grown on the surface of graphene allowed us to determine the orientation and size of the graphene grains. Grain boundaries in the polycrystalline graphene were also visualized reflecting their higher chemical reactivity than the basal plane. The method was successfully applied to graphene field-effect transistors, revealing the actual grain structures of the graphene channels. Moreover, we demonstrate that this method can be extended to determine the grain structure of other 2D materials, such as tungsten disulfide (WS2). Our visualization method based on van der Waals epitaxy can offer a facile and large-scale labeling technique to investigate the grain structures of various 2D materials, and it will also contribute to understand the relationship between their grain structure and physical properties.

Thickness-Dependent Hydrophobicity of Epitaxial Graphene

This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from that of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical force microscopy with a probe rendered hydrophobic by functionalization with octadecyltrichlorosilane (OTS), the adhesion force between the probe and epitaxial graphene on SiC has been measured in deionized water. Owing to the hydrophobic attraction, a larger adhesion force was measured on 2LG Bernal-stacked domains of graphene surfaces, thus showing that 2LG is more hydrophobic than 1LG. Identification of 1LG and 2LG domains was achieved through Kelvin probe force microscopy and Raman spectral mapping. Approximate values of the adhesion force per OTS molecule have been calculated through contact area analysis. Furthermore, the contrast of friction force images measured in contact mode was reversed to the 1LG/2LG adhesion contrast, and its origin was discussed in terms of the likely water depletion over hydrophobic domains as well as deformation in the contact area between the atomic force microscope tip and 1LG.

The role of ambient ice-like water adlayers formed at the interfaces of graphene on hydrophobic and hydrophilic substrates probed using scanning probe microscopy

In this work, we report the role of ice-like water adlayers (IWLs) formed under ambient conditions in between mechanically exfoliated as-prepared and patterned few layer graphene (FLG) and multi-layer graphene (MLG) on hydrophobic Si and hydrophilic SiO2/Si substrates. The growth of the IWL is probed by measuring the height changes in graphene using intermittent contact atomic force microscopy (IC-AFM) and their electrostatic effect is studied using electrostatic force microscopy (EFM) over time. It is found that more IWLs are formed within a shorter period of time, when both as-prepared graphene and underlying substrates are either hydrophobic or hydrophilic in nature. In contrast, AFM voltage nanolithographically patterned trenches on FLG and MLG on the Si substrate show quick formation of IWLs. The effect of IWL formed, on the dimensions of trenches, is correlated with the variation of the measured EFM phase shift over time. This study demonstrates the dependence of the formation of IWLs under ambient conditions on the affinity towards water, at the interface of graphene on hydrophobic and hydrophilic substrates, which has important implications for the performance of graphene-based nanoelectronic devices.

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accompanied by a more than three-fold increase in carrier mobility, up to μh ≈ 4540 cm(2) V(-1) s(-1). On a local scale, Kelvin probe force microscopy provides a complete and detailed map of the surface potential distribution of graphene domains of different thicknesses. Rearrangement of graphene layers upon intercalation to (n + 1)LG, where n is the number of graphene layers (LG) before intercalation, is demonstrated. This is accompanied by a significant increase in the work function of the graphene after the H2-intercalation, which confirms the change of majority carriers from electrons to holes. Raman spectroscopy and mapping corroborate surface potential studies.

Low carrier density epitaxial graphene devices on SiC

The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0001) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current-voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.

Visualisation of edge effects in side-gated graphene nanodevices

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.

Express optical analysis of epitaxial graphene on SiC: impact of morphology on quantum transport

We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.

Standardization of surface potential measurements of graphene domains

We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains in ambient conditions with values Φ1LG ~4.55 ± 0.02 eV and Φ2LG ~ 4.44 ± 0.02 eV for single- and bi-layer, respectively. We demonstrate that frequency-modulated Kelvin probe force microscopy (FM-KPFM) provides more accurate measurement of the SP than amplitude-modulated (AM)-KPFM. The discrepancy between experimental results obtained by different techniques is discussed. In addition, we use FM-KPFM for contactless measurements of the specific components of the device resistance. We show a strong non-Ohmic behavior of the electrode-graphene contact resistance and extract the graphene channel resistivity.