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Zheng Y, Xie H, Zhang Q, Suwardi A, Cheng X, Zhang Y, Shu W, Wan X, Yang Z, Liu Z, Tang X. Unraveling the Critical Role of Melt-Spinning Atmosphere in Enhancing the Thermoelectric Performance of p-Type Bi 0.52Sb 1.48Te 3 Alloys. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36186-36195. [PMID: 32689784 DOI: 10.1021/acsami.0c09656] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Melt spinning has proven effective in maintaining chemical homogeneity and introducing multiscale microstructures that can reduce the lattice thermal conductivity and consequently enhance the thermoelectric performance of consolidated bulk materials. In this work, p-type Bi0.52Sb1.48Te3 bulk alloys are fabricated by melt spinning (MS) followed by subsequent plasma activated sintering (PAS). The influence of different MS atmospheres (air, Ar, N2, and He) on the morphologies of MS ribbons and the thermoelectric properties of MS-PAS bulk materials has been investigated systematically. Because of the relatively high thermal conductivity, a He atmosphere expedites the heat dissipation in the MS process and results in severe sublimation of tellurium and thus inferior thermoelectric performance. In contrast, an Ar atmosphere can essentially prevent heat loss of the fusant and suppress the sublimation of tellurium. Consequently, the corresponding Bi0.52Sb1.48Te3 sample (MS in Ar atmosphere) presents the highest peak ZT and average ZT values of 1.09 (at 340 K) and 0.81 (in 300-500 K), respectively. The average ZT of the sample prepared using an Ar atmosphere is almost three times the one prepared using a He atmosphere. This reflects the importance of using the appropriate atmosphere during the melt-spinning process. This result, which indicates that melt spinning in an Ar atmosphere is preferable to avoid heat loss, can also be extended to other materials.
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Affiliation(s)
- Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hongyao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Qiang Zhang
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Cheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Youfang Zhang
- School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
- Key Laboratory of Materials Processing and Mold, Ministry of Education, Zhengzhou University, Zhengzhou 450002, China
| | - Wei Shu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaojuan Wan
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Zhilan Yang
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Zhihong Liu
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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