Decomposition Characteristics of the TTIP (Tetraisopropyl Orthotitanate) Precursor for Atomic Layer Deposition

Nanocavity-Mediated Purcell Enhancement of Er in TiO2 Thin Films Grown via Atomic Layer Deposition

The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.

Atomic Layer Deposition of Defective Amorphous TiOx Thin Films with Improved Photoelectrochemical Performance

A proper control of defects in TiO2 thin films is challenging work for enhancing the photoelectrochemical (PEC) efficiency in water splitting processes. Additionally, a deep understanding of how defects affect the PEC performance of TiO2 thin films is of great interest for achieving better performance. With these aims, we prepared defective amorphous TiOx thin films at various growth temperatures by atomic layer deposition using tetrakis(dimethylamido)titanium as the Ti precursor. Careful X-ray photoelectron spectroscopy and electron spin resonance spectroscopy analyses revealed that the defect concentration in the TiOx thin films can be controlled by adjusting the growth temperature during the ALD process. We also evaluated the light absorption properties of the deposited TiOx thin films using ultraviolet-visible absorption spectroscopy. And it was found that the TiOx thin film deposited at a growth temperature of 200 °C exhibited the highest defect concentration and the highest photocurrent density of 0.051 mA/cm2 at 1.23 V vs reversible hydrogen electrode (RHE) compared to those of the other films. The light absorption efficiency, photogenerated charge separation efficiency, and charge transfer efficiency of defective amorphous TiOx thin films were carefully studied to understand the correlation between the defect concentration in the prepared TiOx thin film and its PEC activity. This study provides insight into the PEC properties of defective amorphous ALD-TiOx thin films.