Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Self-Powered Organometal Halide Perovskite Photodetector with Embedded Silver Nanowires

Metal-semiconductor-metal (MSM) configuration of perovskite photodetectors (PPDs) suggests easy and low-cost manufacturing. However, the basic structures of MSM PPDs include vertical and lateral configurations, which require the use of expensive materials such as transparent conductive oxides or/and sophisticated fabrication techniques such as lithography. Integrating metallic nanowire-based electrodes into the perovskite photo-absorber layer to form one-half of the MSM PPD structure could potentially resolve the key issues of both configurations. Here, a manufacturing of solution-processed and self-powered MSM PPDs with embedded silver nanowire electrodes is demonstrated. The embedding of silver nanowire electrode into the perovskite layer is achieved by treating the silver nanowire/perovskite double layer with a methylamine gas vapor. The evaporated gold layer is used as the second electrode to form MSM PPDs. The prepared MSM PPDs show a photoresponsivity of 4 × 10-5 AW-1 in the UV region and 2 × 10-5 AW-1 in the visible region. On average, the devices exhibit a photocurrent of 1.1 × 10-6 A under white light (75 mW cm-2) illumination with an ON/OFF ratio of 83.4. The results presented in this work open up a new method for development and fabrication of simple, solution-processable MSM self-powered PPDs.

Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction

Borophene has attracted enormous attention because of its rich and unique structural and electronic properties for promising pratical applications. Although borophene sheets have been realized on different substrates in recent experiments, there are very few reports on the device application of borophene. Recently, borophene can be grown on some functional substrates, which lays a good foundation for its potential applications. Here, we report that hydrogenated borophene can be grown on the fluorine-doped tin oxide glass substrate. The phase of the obtained borophene is well consistent with the predicted semiconductingδ₅-boron sheet. Furthermore, a vertical heterojunction ultraviolet detector based p-borophene/n-zinc oxide was fabricated. The photoresponsivity of the detector is 1.02 × 10^-1A W^-1, the specific detection rate was 1.43 × 10⁹Jones and the response speed wasτ_res = 2.8 s,τ_rec = 3.2 s at the reversed bias of -5 V under the light excitation of 365 nm. This work will lay a foundation for further study on the attractive properties and applications of borophene in new optoelectronic devices and integrated circuits.

Long-Term Stable Near-Infrared-Short-Wave-Infrared Photodetector Driven by the Photothermal Effect of Polypyrrole Nanostructures

Polypyrrole (PPy) is a conductive polymer and widely applied in different applications owing to its broadband absorption in the UV-visible, near-infrared (NIR), and short-wave-infrared (SWIR) spectrum, excellent conductivity, and strong photothermal effect. In this work, we explored for the first time the photothermal effect of PPy nanoparticles (PPy-NPs) in a photothermal-induced detector structure and developed a new type of air-stable hybrid PPy-NPs/Pt photodetector (PD) with NIR/SWIR sensitivity. By combining PPy-NPs with a platinum (Pt)-resistive pattern, we fabricated PPy-NPs/Pt PDs that are sensitive to illumination in the wavelength range from 800 to 2000 nm. Under the illumination of λ = 1.5 μm, the maximum photoresponsivity was measured to be ∼1.3 A/W with a 131 μs photoresponse rise time. Owing to the excellent material stability from both PPy-NPs and the Pt pattern, the current photodetectors show long-term stable photoresponsivity when they were stored in air without encapsulation. The results suggest that the PPy-NPs/Pt hybrid PDs are promising candidates for a new type of low-cost and broadband due to their multiple advantages such as free of toxic heavy metals, air stability, and solution processing.

Tin-selenide as a futuristic material: properties and applications

SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.