Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

Duple charge separation and plasmonically enriched DSSC and piezo-photocatalytic efficacy of Au anchored perovskite Gd3+:BiFeO3 nanospheres

Enhancing the solar-physical conversion efficacy ability of the nanomaterials is an essential for real-time implementation. We report the enhanced solar-physical efficiency of the BiFeO3 nanospheres via Gd3+ doping and Au nanoparticles decoration. Initially, we have obtained the Bi1-xGdxFeO3 nanospheres were attained via a simple solvothermal technique and then citrate reduction of Au was conducted. Obtained perovskite BiFeO systems were studied for the Gd3+ doping, crystalline phase and elemental purity using the XRD and XPS techniques. Transmission electron microscope had revealed the ∼400 nm sized BiFeO3 nanospheres. Optical absorption spectrum revealed the enhanced visible photon absorption occurring in BiFeO3 for both Gd3+ doping and Au decoration. The bandgap values of pristine, 1%, 3% and 5% Gd3+ doped in BiFeO3 are 2.2 eV, 2.19 eV, 2.17 eV and 2.12 eV, respectively. Conducted photoluminescence revealed the dual electron trapping occurring in BiFeO3 via Gd3+ ions and Au nanoparticles. LED light assisted 72% of piezo-photocatalytic degradation efficiency of Tetracycline is achieved with Bi0 95Fe0 05O3/Au, whereas the photo catalytic is only 65% and piezo catalytic efficiency is 58%. In recyclable studies the Bi0.95Gd0.05FeO3/Au had shown the consistent piezo-photocatalytic efficiency for 3 reaction cycles. Further, fabricated DSSC studies revealed that near 30 % enhanced solar photovoltaic efficiency for Bi0 95Fe0 05O3/Au (η = 6.5%) solar cells on par to the pristine BiFeO3 (η = 5.02%).

Piezotronic and Piezo-Phototronic Effects-Enhanced Core-Shell Structure-Based Nanowire Field-Effect Transistors

Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core-shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decreases with the channel length, gate doping concentration, and gate voltage. Under a tensile strain of 0.39‱, the saturation current change rate can reach 38%. Finally, another core-shell structure-based ZnO/Si nanowire HJFET model with the same parameters was established. The simulation results show that at a compressive strain of -0.39‱, the saturation current change rate is about 18%, which is smaller than that of the Si/ZnO case. Piezoelectric potential and photogenerated electromotive force jointly regulate the carrier distribution in the channel, change the width of the channel depletion layer and the channel conductivity, and thus regulate the channel current. The research results provide a certain degree of reference for the subsequent experimental design of Zn-based HJFETs and are applicable to other kinds of FETs.

Design and Analysis of a Hybrid Displacement Amplifier Supporting a High-Performance Piezo Jet Dispenser

In this study, a compliant amplifier powered by a piezoelectric stack is designed to meet high-performance dispensing operation requirements. By studying the issue of low frequency bandwidth on the traditional bridge-type amplifier mechanism, we propose a displacement amplifier mechanism, hybrid bridge-lever-bridge (HBLB), that enhances its dynamic performance by combining the traditional bridge-type and lever mechanism. A guiding beam is added to further improve its output stiffness with a guaranteed large amplification ratio. An analytical model has been developed to describe the full elastic deformation behavior of the HBLB mechanism that considers the lateral displacement loss of the input end, followed by a verification through a finite element analysis (FEA). Results revealed that the working principle of the HBLB optimizes the structural parameters using the finite element method. Finally, a prototype of the displacement amplifier was fabricated for performance tests. Static and dynamic test results revealed that the proposed mechanism can reach a travel range of 223.2 μm, and the frequency bandwidth is 1.184 kHz, which meets the requirements of a high-performance piezo jet dispenser.