Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Area-Selective Growth of Zinc Oxide Nanowire Arrays for Piezoelectric Energy Harvesting

In this work, we present the area-selective growth of zinc oxide nanowire (NW) arrays on patterned surfaces of a silicon (Si) substrate for a piezoelectric nanogenerator (PENG). ZnO NW arrays were selectively grown on patterned surfaces of a Si substrate using a devised microelectromechanical system (MEMS)-compatible chemical bath deposition (CBD) method. The fabricated devices measured a maximum peak output voltage of ~7.9 mV when a mass of 91.5 g was repeatedly manually placed on them. Finite element modeling (FEM) of a single NW using COMSOL Multiphysics at an applied axial force of 0.9 nN, which corresponded to the experimental condition, resulted in a voltage potential of -6.5 mV. The process repeated with the same pattern design using a layer of SU-8 polymer on the NWs yielded a much higher maximum peak output voltage of ~21.6 mV and a corresponding peak power density of 0.22 µW/cm3, independent of the size of the NW array. The mean values of the measured output voltage and FEM showed good agreement and a nearly linear dependence on the applied force on a 3 × 3 µm2 NW array area in the range of 20 to 90 nN.

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

Thin nanocrystalline transparent Al-doped ZnO (1-10 at.% Al) films were synthesized by solid-phase pyrolysis at 700 °C. Synthesized Al-doped ZnO films were investigated by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM). All obtained materials were crystallized into the wurtzite structure, which was confirmed by XRD. The material crystallinity decreases with the introduction of aluminum. SEM and TEM showed that the films are continuous and have a uniform distribution of nanoparticles with an average size of 15-20 nm. TEM confirmed the production of Al-doped ZnO films. The transmittance of Al-doped ZnO films in the range of 400-1000 nm is more than 94%. The introduction of 1% Al into ZnO leads to a narrowing of the band gap compared to ZnO to a minimum value of 3.26 eV and a sharp decrease in the response time to the radiation exposure with a wavelength of 400 nm. An increase in aluminum concentration leads to a slight increase in the band gap, which is associated with the Burstein-Moss effect. The minimum response time (8 s) was shown for film containing 10% Al, which is explained by the shortest average lifetime of charge carriers (4 s).

Impact of Radio Frequency Plasma Power on the Structure, Crystallinity, Dislocation Density, and the Energy Band Gap of ZnO Nanostructure

The aim of this study is to investigate the effect of radio frequency (RF) plasma power on the morphology, crystal structure, elemental chemical composition, and optical properties of ZnO nanostructure using a direct current magnetron sputtering technique. This study emphasized that the growth rate and surface morphology of the polycrystalline ZnO were enhanced as the radio frequency (RF) plasma power increased. This can be observed by fixing other parameters such as the growth time, substrate temperature, and chamber partial pressure. The RF plasma power alteration from 150 to 300 W can produce uniform nanograin, spheroid, and nanorods. Additionally, the RF plasma power alteration leads to the alteration in the ZnO nanorod diameter from 14 to 202 nm. It was observed that the XRD intensities are increased at higher plasma powers. This, perhaps, can be inferred from the transformation of the granular microcrystals to the needlelike or platelike large crystals, as already examined using SEM images. This also has an impact on the average crystalline size, which increased from 10 to 40 nm on increasing the RF plasma power. Moreover, the increase of the RF plasma power has an obvious impact upon the optical band-gap energy, which was accordingly decreased from 3.26 to 3.22 eV. Finally, the absorption band edge was shifted to a lower-energy region due to the quantum size effect at the nanorange.