Fabrication of Piezoelectric ZnO Nanowires Energy Harvester on Flexible Substrate Coated with Various Seed Layer Structures

Control of ZnO nanowires growth in flexible perovskite solar cells: A mini-review

Due to their excellent properties, Zinc oxide nanowires (ZnO NW) have been attractive and considered as a promising electron-transporting layer (ETL) in flexible Perovskite Solar Cells (FPSCs). Since the first report on ZnO NWs-based FPSCs giving 2.6 % power conversion efficiency (in 2013), great improvements have been made, allowing to reach up to∼15 % nowadays. However, some issues still need to be addressed, especially on flexible substrates, to achieve uniform and well-aligned ZnO NWs via low-cost chemical solution techniques. Several parameters, such as the growing method (time, temperature, precursors concentration), addition of seed layer (thickness, roughness, annealing temperature) and substrate (rigid or flexible), play a crucial role in ZnO NWs properties (i.e., length, diameter, density and aspect ratio). In this review, these parameters allowing to control the properties of ZnO NWs, like the growth techniques, utilization of seed layers and the growing method (time or precursors concentration) have been summarized. Then, a particular focus on the ZnO NW's role in FPSCs as well as the use of these results on the development of ZnO NWs-based FPSCs have been highlighted.

Area-Selective Growth of Zinc Oxide Nanowire Arrays for Piezoelectric Energy Harvesting

In this work, we present the area-selective growth of zinc oxide nanowire (NW) arrays on patterned surfaces of a silicon (Si) substrate for a piezoelectric nanogenerator (PENG). ZnO NW arrays were selectively grown on patterned surfaces of a Si substrate using a devised microelectromechanical system (MEMS)-compatible chemical bath deposition (CBD) method. The fabricated devices measured a maximum peak output voltage of ~7.9 mV when a mass of 91.5 g was repeatedly manually placed on them. Finite element modeling (FEM) of a single NW using COMSOL Multiphysics at an applied axial force of 0.9 nN, which corresponded to the experimental condition, resulted in a voltage potential of -6.5 mV. The process repeated with the same pattern design using a layer of SU-8 polymer on the NWs yielded a much higher maximum peak output voltage of ~21.6 mV and a corresponding peak power density of 0.22 µW/cm3, independent of the size of the NW array. The mean values of the measured output voltage and FEM showed good agreement and a nearly linear dependence on the applied force on a 3 × 3 µm2 NW array area in the range of 20 to 90 nN.

A Review on 1-D Nanomaterials: Scaling-Up with Gas-Phase Synthesis

Nanowire-like materials exhibit distinctive properties comprising optical polarisation, waveguiding, and hydrophobic channelling, amongst many other useful phenomena. Such 1-D derived anisotropy can be further enhanced by arranging many similar nanowires into a coherent matrix, known as an array superstructure. Manufacture of nanowire arrays can be scaled-up considerably through judicious use of gas-phase methods. Historically, the gas-phase approach however has been extensively used for the bulk and rapid synthesis of isotropic 0-D nanomaterials such as carbon black and silica. The primary goal of this review is to document recent developments, applications, and capabilities in gas-phase synthesis methods of nanowire arrays. Secondly, we elucidate the design and use of the gas-phase synthesis approach; and finally, remaining challenges and needs are addressed to advance this field.

ZnO Nanowires: Growth, Properties, and Energy Applications

As a biocompatible semiconductor composed of abundant elements, ZnO, in the form of nanowires, exhibits remarkable properties, mainly originating from its wurtzite structure and correlated with its high aspect ratio at nanoscale dimensions [...].

Influence of Mechanical Properties on the Piezoelectric Response of UV-Cured Composite Films Containing Different ZnO Morphologies

ZnO flower-like (ZFL) and needle (ZLN) structures were synthesized and embedded into UV-curable acrylic resin (EB), with the aim to study the effect of filler loading on the piezoelectric properties of the resulting composite films. The composites showed uniform dispersion of fillers within the polymer matrix. However, by increasing the filler amount, the number of aggregates increased, and ZnO fillers appeared not to be perfectly embedded in polymer film, indicating poor interaction with acrylic resin. The filler content increase caused an increase in glass transition temperature (T_g) and a decrease in storage modulus in the glassy state. In particular, compared with pure UV-cured EB (T_g = 50 °C), 10 wt.% ZFL and ZLN presented T_g values of 68 and 77 °C, respectively. The piezoelectric response generated by the polymer composites was good when measured at 19 Hz as a function of the acceleration; the RMS output voltages achieved at 5 g were 4.94 and 1.85 mV for the composite films containing ZFL and ZLN, respectively, at their maximum loading levels (i.e., 20 wt.%). Further, the RMS output voltage increase was not proportional to the filler loading; this finding was attributable to the decrease in the storage modulus of the composites at high ZnO loading rather than the dispersion of filler or the number of particles on the surface.

Synergistic Enhancement Properties of a Flexible Integrated PAN/PVDF Piezoelectric Sensor for Human Posture Recognition

The flexible pressure sensor has attracted much attention due to its wearable and conformal advantage. All the same, enhancing its electrical and structural properties is still a huge challenge. Herein, a flexible integrated pressure sensor (FIPS) composed of a solid silicone rubber matrix, composited with piezoelectric powers of polyacrylonitrile/Polyvinylidene fluoride (PAN/PVDF) and conductive silver-coated glass microspheres is first proposed. Specifically, the mass ratio of the PAN/PVDF and the rubber is up to 4:5 after mechanical mixing. The output voltage of the sensor with composite PAN/PVDF reaches 49 V, which is 2.57 and 3.06 times that with the single components, PAN and PVDF, respectively. In the range from 0 to 800 kPa, its linearity of voltage and current are all close to 0.986. Meanwhile, the sensor retains high voltage and current sensitivities of 42 mV/kPa and 0.174 nA/kPa, respectively. Furthermore, the minimum response time is 43 ms at a frequency range of 1-2.5 Hz in different postures, and the stability is verified over 10,000 cycles. In practical measurements, the designed FIPS showed excellent recognition abilities for various gaits and different bending degrees of fingers. This work provides a novel strategy to improve the flexible pressure sensor, and demonstrates an attractive potential in terms of human health and motion monitoring.

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO₂/p⁺⁺-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0-20 mM ammonium hydroxide (NH₄OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5-15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH₄OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 10¹⁸ and 4.58 × 10¹⁸ cm^-3 were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting-piezoelectric properties.

ZnO Thin Films Growth Optimization for Piezoelectric Application

The piezoelectric response of ZnO thin films in heterostructure-based devices is strictly related to their structure and morphology. We optimize the fabrication of piezoelectric ZnO to reduce its surface roughness, improving the crystalline quality, taking into consideration the role of the metal electrode underneath. The role of thermal treatments, as well as sputtering gas composition, is investigated by means of atomic force microscopy and x-ray diffraction. The results show an optimal reduction in surface roughness and at the same time a good crystalline quality when 75% O2 is introduced in the sputtering gas and deposition is performed between room temperature and 573 K. Subsequent annealing at 773 K further improves the film quality. The introduction of Ti or Pt as bottom electrode maintains a good surface and crystalline quality. By means of piezoelectric force microscope, we prove a piezoelectric response of the film in accordance with the literature, in spite of the low ZnO thickness and the reduced grain size, with a unipolar orientation and homogenous displacement when deposited on Ti electrode.