Ferromagnetic Behavior and Magneto-Optical Properties of Semiconducting Co-Doped ZnO

Sensitivity Enhancement of CO2 Sensors at Room Temperature Based on the CZO Nanorod Architecture

Cobalt-doped ZnO (CZO) thin films were deposited on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of a single target prepared with ZnO and Co3O4 powders. Changes in the crystallinity, morphology, optical properties, and chemical composition of the CZO thin films were investigated at various sputtering powers of 45, 60, and 75 W. All samples presented a hexagonal wurtzite-type structure with a preferential c-axis at the (002) plane, along with a distinct change in the strain values through X-ray diffraction patterns. Scanning electron and atomic force microscopy revealed uniform and dense deposition of nanorod CZO samples with a high surface roughness (RMS). The Hall mobility and carrier concentration increased with the introduction of Co+ ions into the ZnO matrix, as seen from the Hall effect study. The gradual increase of the power applied on the target source significantly affected the morphology of the CZO thin film, which is reflected in the CO2-sensing performance. The best gas response to CO2 was recorded for CZO-60 W with a response of 1.45 for 500 ppm CO2, and the response/recovery times were 72 and 35 s, respectively. The distinguishing feature of the CZO sensor is its ability to effectively and rapidly detect the CO2 target gas at room temperature (∼27 °C, RT).

Particles-Matrix Bond in ZnCoO:H and ZnCoAlO:H Films: Issues of Magnetism and Spin Injection

ZnCoO:H and ZnCoAlO:H films were synthesized by radio frequency magnetron sputtering in a (1 - x)Ar + xH₂ mixed atmosphere with x = 0.2-0.5. The films contain different amounts of metallic Co particles (from 7.6% and higher) ~4-7 nm in size. The magnetic and magneto-optical (MO) behavior of the films was analyzed in combination with their structural data. The samples exhibit high values of magnetization (up to 377 emu/cm³) and MO response at room temperature. Two situations are considered: (1) the film magnetism is associated only with isolated metal particles and (2) magnetism is present both in the oxide matrix and in metal inclusions. It has been established that the formation mechanism of the magnetic structure of ZnO:Co²⁺ is due to the spin-polarized conduction electrons of metal particles and zinc vacancies. It was also found that in the presence of two magnetic components in the films, these components are exchange-coupled. In this case, the exchange coupling generates a high spin polarization of the films. The spin-dependent transport properties of the samples have been studied. A high value of the negative magnetoresistance of the films at room temperature (~4%) was found. This behavior was explained in terms of the giant magnetoresistance model. Thus, the ZnCoO:H and ZnCoAlO:H films with high spin polarization can be considered as sources of spin injection.

Editorial for Special Issue "Electric Transport and Magnetic Properties in Nanomaterials and Thin Films"

Several nanomaterials and thin films have recently attracted much attention due to their peculiar electric transport and magnetic properties, such as the so-called magnetoresistance effect and the interplay between spin, orbital, charge, and structural degrees of freedom [...].