Infrared Photodetection from 2D/3D van der Waals Heterostructures

Next-Generation Image Sensors Based on Low-Dimensional Semiconductor Materials

With the rapid advancement of technology of big data and artificial intelligence (AI), the exponential increase in visual information leads to heightened demands for the quality and analysis of imaging results, rendering traditional silicon-based image sensors inadequate. This review serves as a comprehensive overview of next-generation image sensors based on low-dimensional semiconductor materials encompassing 0D, 1D, 2D materials, and their hybrids. It offers an in-depth introduction to the distinctive properties exhibited by these materials and delves into the device structures tailored specifically for image sensor applications. The classification of novel image sensors based on low-dimensional materials, in particular for transition metal dichalcogenides (TMDs), covering the preparation methods and corresponding imaging characteristics, is explored. Furthermore, this review highlights the diverse applications of low-dimensional materials in next-generation image sensors, encompassing advanced imaging sensors, biomimetic vision sensors, and non-von Neumann imaging systems. Lastly, the challenges and opportunities encountered in the development of next-generation image sensors utilizing low-dimensional semiconductor materials, paving the way for further advancements in this rapidly evolving field, are proposed.

An investigation on the electromagnetic wave absorbing performance and corrosion resistance of carbonyl iron powder/epoxy coatings modified by ferrosoferric oxide and basalt fibers

With the development of science and technology, there is a great demand for electromagnetic wave absorbing materials for both military and civilian purposes. Among them, carbonyl iron powder (CIP) has attracted a lot of attention due to its mature production system and good electromagnetic wave loss capability. However, the application of CIP is limited due to poor impedance matching, poor corrosion resistance, and poor oxidation resistance. Based on this, in this work, CIP and basalt fibers (BF) were used and flower-like ferrosoferric oxide (Fe3O4) was generated in situ on their surfaces by hydrothermal method. The results showed that the generation of Fe3O4 with the addition of BF greatly optimized the impedance matching of the CIP. The modified CIP had a minimum reflection loss of -51.09 GHz, corresponding to an effective absorption bandwidth (<-10 dB) of 6.16 GHz, fully covering the Ku-band with just a 1.5 mm coating thickness. Thanks to the protective effect of Fe3O4, the oxidation weight gain temperature of the modified CIP powder in air was increased from 240 °C to 500 °C, showing good thermal stability and oxidation resistance. In addition, the corrosion resistance of the coating was tested and analyzed using electrochemical impedance spectroscopy (EIS). The results showed that the impedance modulus of the coating at 0.01 Hz was enhanced by one order of magnitude from 106 Ω·cm2 to 107 Ω·cm2. Finally, the radar cross section (RCS) of the material was simulated using CTS software to further evaluate the wave absorption properties.

Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors

Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device's performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer's quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.

Performance of Low-Dimensional Solid Room-Temperature Photodetectors-Critical View

In the last twenty years, nanofabrication progress has allowed for the emergence of a new photodetector family, generally called low-dimensional solids (LDSs), among which the most important are two-dimensional (2D) materials, perovskites, and nanowires/quantum dots. They operate in a wide wavelength range from ultraviolet to far-infrared. Current research indicates remarkable advances in increasing the performance of this new generation of photodetectors. The published performance at room temperature is even better than reported for typical photodetectors. Several articles demonstrate detectivity outperforming physical boundaries driven by background radiation and signal fluctuations. This study attempts to explain these peculiarities. In order to achieve this goal, we first clarify the fundamental differences in the photoelectric effects of the new generation of photodetectors compared to the standard designs dominating the commercial market. Photodetectors made of 2D transition metal dichalcogenides (TMDs), quantum dots, topological insulators, and perovskites are mainly considered. Their performance is compared with the fundamental limits estimated by the signal fluctuation limit (in the ultraviolet region) and the background radiation limit (in the infrared region). In the latter case, Law 19 dedicated to HgCdTe photodiodes is used as a standard reference benchmark. The causes for the performance overestimate of the different types of LDS detectors are also explained. Finally, an attempt is made to determine their place in the global market in the long term.

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

Functional Nanomaterials for Sensing and Detection

Functional nanomaterials involve various nanostructured objects, such as zero-dimensional (0D), 1D, and 2D nano-objects (nanoparticles, nanowires, nanotubes, nanosheets, etc [...].

The application of infrared thermography technology in flap: A perspective from bibliometric and visual analysis

The application of infrared thermography technology (IRT) in flap has become a major focus of research, as it provides a non-invasive, real-time, and quantitative approach for monitoring flap perfusion. In this regard, we conducted a comprehensive visualization and scientometric analysis to systematically summarize and discuss the current state of research in this field. We systematically reviewed publications on the application of IRT in flap procedures from 1999 to 2022, using the Web of Science Core Collection (WoSCC). Through scientometric analysis, we examined annual trends, affiliations, countries, journals, authors, and their relationships, providing insights into current hotspots and future developments in this area. We analysed 522 English studies and found a steady increase in annual publications. The United States and Germany had the highest publication rates, with Beth Israel Deaconess Medical Center and Shanghai Jiaotong University being leading institutions. Notably, Lee BT and Alex Keller emerged as influential authors in this field. Compared to existing techniques, infrared-based technology offers significant advantages for non-invasive monitoring of flap perfusion, including simplicity of operation and objective results. Future trends should focus on interdisciplinary collaborations to develop new infrared devices and achieve intelligent image processing, enabling broader application in various clinical scenarios. This bibliometric study summarizes the progress and landscape of research on 'the Application of infrared thermography technology in flap' over the past two decades, providing valuable insights and serving as a reliable reference to drive further advancements and spark researchers' interest in this field.

Polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional heterojunction

Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning in the field of military and civilian. UV photodetectors based on GaN have aroused much attention due to high photocurrent and high sensitivity. However, the dependence on external power sources and the limited sensitivity to polarized UV light significantly impede the practical application of these photodetectors in UV-polarized photodetection. Herein, a polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is proposed. Owing to the high-quality junction and type-II band alignment, the responsivity and specific detectivity reach values of 870 mA/W and 6.8 × 1011 Jones, under 325 nm illumination, respectively. Furthermore, thanks to the strong in-plane anisotropy of ReSe2, the device is highly sensitive to polarized UV light with a photocurrent anisotropic ratio up to 6.67. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient polarization-sensitive photodetectors.

Graphene nanowalls in photodetectors

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.