Improving Electron Extraction Ability and Device Stability of Perovskite Solar Cells Using a Compatible PCBM/AZO Electron Transporting Bilayer

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Synchronous Interface Modification and Bulk Passivation via a One-Step Cesium Bromide Diffusion Process for Highly Efficient Perovskite Solar Cells

Perovskite film modification is one of the most effective methods to improve the performance of perovskite solar cells. The modification should follow its characters of an asymmetric structure and the corresponding charge transportation and extraction. In this work, it is shown that synchronous interface modification and bulk passivation for highly efficient PSCs can be achieved by a one-step cesium bromide (CsBr) diffusion process because it is more suitable for an asymmetric structure. The synchronous interface modification and bulk asymmetric passivation can be better applied to the asymmetric PSC structure and can boost the power conversion efficiency apparently from 19.5 to 22.1%. It is shown that the perovskite crystallization is improved and the charge extraction is also enhanced obviously due to the better band alignment matching. The diffusion of CsBr into the perovskite bulk could form a gradient distribution, which is more applicable to the asymmetric charge transport and extraction. Thus, the CsBr at the interface between the electronic transport layer (ETL) and perovskite, as well as in the perovskite bulk, could suppress charge recombination. All of these factors can improve the J_SC and V_OC as well as the power conversion efficiency (PCE) of the PSCs. The results point out that the studied method is a simple and efficient way to fabricate high-performance PSCs by interface modification and bulk asymmetric passivation in a single step.

The effects of the chemical composition on the structural, thermodynamic, and mechanical properties of all-inorganic halide perovskites

A systematic ab-initio study of all-inorganic perovskites with formula CsPb_1−bSn_b(I_1−xBr_x)₃ has been performed, elucidating the connection of that composition with their structural, thermodynamics and mechanical properties.

Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer

The performance of perovskite solar cells (PSCs), especially for the parameters of open-circuit voltage (V_oc) and fill factor, is seriously restricted by the unavoidable interfacial charge recombination. In this study, an ultrawide band gap semiconductor material of Ga₂O₃ is introduced between fluorine-doped tin oxide and SnO₂ to regulate the interfacial charge dynamics by forming the Ga₂O₃/SnO₂ electron-transporting bilayer. Ga₂O₃ has an appropriate conduction band minimum which benefits the electron transport, and at the same time, it has a very deep valence band maximum which could be regarded as an effective blocking layer. Such an innovative structure triggers the advantages of a lower work function and a smoother surface of the electron-transporting bilayer which leads to a high-quality perovskite film. Furthermore, superior hole-blocking properties of the introduced Ga₂O₃ layer could effectively reduce the interfacial recombination. All the properties could help to improve the extracting and transporting ability of charge carriers synergistically. Finally, the efficiency and stability of PSCs are greatly enhanced. All results suggest that the performance of PSCs could be improved effectively by introducing the ultrawide band gap oxide semiconductor of Ga₂O₃.

An inherent instability study using ab initio computational methods and experimental validation of Pb(SCN)2 based perovskites for solar cell applications

Perovskite materials with ABX₃ chemistries are promising candidates for photovoltaic applications, owing to their suitable optoelectronic properties. However, they are highly hydrophilic and unstable in nature, limiting the commercialization of perovskite photovoltaics. Mixed halide ion-doped perovskites are reported to be more stable compared to simple ABX₃ chemistries. This paper describes ab initio modeling, synthesis, and characterization of thiocyanate doped lead iodide CH₃NH₃PbI_(3-x)(SCN)_x perovskites. Several perovskite chemistries with an increasing concentration of (SCN)^- at x = 0, 0.25, 0.49, 1.0, 1.45 were evaluated. Subsequently, 'n-i-p' and 'p-i-n' perovskite solar device architectures, corresponding to x = 0, 0.25, 0.49, 1.0 thiocyanate doped lead halide perovskite chemistry were fabricated. The study shows that among all the devices fabricated for different compositions of perovskites, p-i-n perovskite solar cell fabricated using CH₃NH₃PbI_(3-x)(SCN)_x perovskite at x = 1.0 exhibited the highest stability and device efficiency was retained until 450 h. Finally, a solar panel was fabricated and its stability was monitored.

Non-Fullerene Small Molecule Electron-Transporting Materials for Efficient p-i-n Perovskite Solar Cells

PC₆₁BM is commonly used in perovskite solar cells (PSC) as the electron transport material (ETM). However, PC₆₁BM film has various disadvantages, such as its low coverage or the many pinholes that appear due to its aggregation behavior. These faults may lead to undesirable direct contact between the metal cathode and perovskite film, which could result in charge recombination at the perovskite/metal interface. In order to overcome this problem, three alternative non-fullerene electron materials were applied to inverted PSCs; they were evaluated on suitability as electron transport layers. The roles and effects of these non-fullerene ETMs on device performance were studied using photoluminescence (PL) measurements, field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), internal resistance in PSC measurements, and conductive atomic force microscopy (C-AFM). It was found that one of the tested materials, IT-4f, showed excellent electron extraction ability and was associated with reduced recombination. The PSC with IT-4f as the ETM produced better cell-performance; it had an average PCE of 11.21%, which makes it better than the ITIC and COi8DFIC-based devices. Finally, IT-4f was compared with PC₆₁BM; it was found that the two materials have quite comparable efficiency and stability levels.

Influence of Chloride/Iodide Ratio in MAPbI3-xClx Perovskite Solar Devices: Case of Low Temperature Processable AZO Sub-Layer

A significant current challenge for perovskite solar technology is succeeding in designing devices all by low temperature processes. This could help for both rigid devices industrialisation and flexible devices development. The depositions of nanoparticles from colloidal suspensions consequently emerge as attractive approaches, especially due to their potential for low temperature curing not only for the photoactive perovskite layer but also for charge transporting layers. Here, NIP solar cells based on aluminium doped zinc oxide (AZO) electron transport layer were fabricated using a low temperature compatible process for AZO deposition. For the extensively studied perovskites based on methylammonium lead halides (MAPbI3-xClx), the chloride/iodide equation is widely proposed to follow an optimal value corresponding to an introduced MAI:PbCl2 ratio of 3:1. However, the perovskite formulation should be considered as a key parameter for the optimization of power conversion efficiency when exploring new perovskite sub-layers. We here propose a systematic method for the structural determination of the optimal ratio. It may depend on the sublayer and results from structural changes around the optimal value. The functional properties gradually increase with the addition of chlorine as long as it remains intercalated in a single phase. Above the optimal ratio, the appearance of two phases degrades the system.

ZnO as a Functional Material, a Review

Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.