Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography

Pulsed thermoreflectance imaging for thermophysical properties measurement of GaN epitaxial heterostructures

Multilayer heterostructures composed of a substrate and an epitaxial film are widely utilized in advanced electronic devices. However, thermal bottlenecks constrain their performance and reliability, and efficient approaches to comprehensively measure the thermophysical properties of heterostructures are urgently needed. In this work, a pulsed thermoreflectance imaging (PTI) method is proposed, which combines the transient temperature mapping of thermoreflectance thermal imaging with transient pulsed excitation. By executing merely three transient tests, six thermophysical properties, including the film thermal conductivity and specific heat capacity, the substrate thermal conductivity and specific heat capacity, the film-substrate thermal boundary resistance, and the equivalent thermal conductivity of the insulating layer, can be simultaneously measured in a heterostructure sample. The proposed method applies a pulsed current excitation to a metal heater line on the sample surface and utilizes the thermoreflectance thermal imaging system to measure the temperature of different spatial regions on the sample surface at different time windows. The temporal and spatial variation information of the temperature field is then extracted and combined with finite element method inversion calculation to obtain the thermophysical properties of heterostructures. To validate the accuracy and reliability of this method, we conducted measurements on a GaN-on-SiC heterostructure sample and obtained thermophysical properties consistent with the representative literature data that have previously been reported. The proposed PTI method, characterized by its high sensitivity, demonstrates good efficiency and reliability in conducting comprehensive thermophysical property characterization of GaN epitaxial heterostructures.

Nanowatt-Level Photoactivated Gas Sensor Based on Fully-Integrated Visible MicroLED and Plasmonic Nanomaterials

Photoactivated gas sensors that are fully integrated with micro light-emitting diodes (µLED) have shown great potential to substitute conventional micro/nano-electromechanical (M/NEMS) gas sensors owing to their low power consumption, high mechanical stability, and mass-producibility. Previous photoactivated gas sensors mostly have utilized ultra-violet (UV) light (250-400 nm) for activating high-bandgap metal oxides, although energy conversion efficiencies of gallium nitride (GaN) LEDs are maximized in the blue range (430-470 nm). This study presents a more advanced monolithic photoactivated gas sensor based on a nanowatt-level, ultra-low-power blue (λ_peak  = 435 nm) µLED platform (µLP). To promote the blue light absorbance of the sensing material, plasmonic silver (Ag) nanoparticles (NPs) are uniformly coated on porous indium oxide (In₂ O₃ ) thin films. By the plasmonic effect, Ag NPs absorb the blue light and spontaneously transfer excited hot electrons to the surface of In₂ O₃ . Consequently, high external quantum efficiency (EQE, ≈17.3%) and sensor response (ΔR/R₀ (%) = 1319%) to 1 ppm NO₂ gas can be achieved with a small power consumption of 63 nW. Therefore, it is highly expected to realize various practical applications of mobile gas sensors such as personal environmental monitoring devices, smart factories, farms, and home appliances.

A Critical Review on the Junction Temperature Measurement of Light Emitting Diodes

In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most efficient alternative to conventional light sources. Yet, in comparison to other lighting systems, LEDs operate at low temperatures while junction temperature (T_j) is is among the main factors dictating their lifespan, reliability, and performance. This indicates that accurate measurement of LED temperature is of great importance to better understand the thermal effects over a system and improve performance. Over the years, various T_j measurement techniques have been developed, and existing methods have been improved in many ways with technological and scientific advancements. Correspondingly, in order to address the governing phenomena, benefits, drawbacks, possibilities, and applications, a wide range of measurement techniques and systems are covered. This paper comprises a large number of published studies on junction temperature measurement approaches for LEDs, and a summary of the experimental parameters employed in the literature are given as a reference. In addition, some of the corrections noted in non-ideal thermal calibration processes are discussed and presented. Finally, a comparison between methods will provide the readers a better insight into the topic and direction for future research.

Quantitative Photothermal Characterization with Bioprinted 3D Complex Tissue Constructs for Early-Stage Breast Cancer Therapy Using Gold Nanorods

Plasmonic photothermal therapy (PPTT) using gold nanoparticles (AuNPs) has shown great potential for use in selective tumor treatment, because the AuNPs can generate destructive heat preferentially upon irradiation. However, PPTT using AuNPs has not been added to practice, owing to insufficient heating methods and tissue temperature measurement techniques, leading to unreliable and inaccurate treatments. Because the photothermal properties of AuNPs vary with laser power, particle optical density, and tissue depth, the accurate prediction of heat generation is indispensable for clinical treatment. In this report, bioprinted 3D complex tissue constructs comprising processed gel obtained from porcine skin and human decellularized adipose tissue are presented for characterization of the photothermal properties of gold nanorods (AuNRs) having an aspect ratio of 3.7 irradiated by a near-infrared laser. Moreover, an analytical function is suggested for achieving PPTT that can cause thermal damage selectively on early-stage human breast cancer by regulating the heat generation of the AuNRs in the tissue.

The Solution for the Thermographic Measurement of the Temperature of a Small Object

This article describes the measuring system and the influence of selected factors on the accuracy of thermographic temperature measurement using a macrolens. This method enables thermographic measurement of the temperature of a small object with an area of square millimeters as, e.g., electronic elements. Damage to electronic components is often preceded by a rise in temperature, and an effective way to diagnose such components is the use of a thermographic camera. The ability to diagnose a device under full load makes thermography a very practical method that allows us to assess the condition of the device during operation. The accuracy of such a measurement depends on the conditions in which it is carried out. The incorrect selection of at least one parameter compensating the influence of the factor occurring during the measurement may cause the indicated value to differ from the correct value. This paper presents the basic issues linked to thermographic measurements and highlights the sources of errors. A measuring stand which enables the assessment of the influence of selected factors on the accuracy of thermographic measurement of electronic elements with the use of a macrolens is presented.

Lack of Thermogram Sharpness as Component of Thermographic Temperature Measurement Uncertainty Budget

The number of components of a thermographic temperature measurement uncertainty budget and their ultimate contribution depend on the conditions in which the measurement is performed. The acquired data determine the accuracy with which the uncertainty component is estimated. Unfortunately, when some factors have to be taken into account, it is difficult to determine the value of the uncertainty component caused by the occurrence of this factor. In the case of a thermographic temperature measurement, such a factor is the lack of sharpness of the registered thermogram. This problem intensifies when an additional macro lens must be used. Therefore, it is decided to commence research to prepare an uncertainty budget of thermographic measurement with an additional macro lens based on the B method described in EA-4/02 (European Accreditation publications). As a result, the contribution of factors in the uncertainty budget of thermographic measurement with additional macro lens and the value of expanded uncertainty were obtained.

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal-organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polydimethylsiloxane (PDMS) matrix. Despite the poor thermal conductivity of the polymer, active nitride NWs effectively dissipate heat to the substrate. Therefore, the flexible LED mounted on a copper heat sink can operate under high injection without significant overheating, while the device mounted on a plastic holder showed a 25% higher temperature for the same injected current. The efficiency of the heat dissipation by nitride NWs was further confirmed with finite-element modeling of the temperature distribution in a NW/polymer composite membrane.

Thermal Imaging Metrology with a Smartphone Sensor

Thermal imaging cameras are expensive, particularly those designed for measuring high temperature objects with low measurement uncertainty. A wide range of research and industrial applications would benefit from lower cost temperature imaging sensors with improved metrology. To address this problem, we present the first ever quantification methodology for the temperature measurement performance of an ultra-low cost thermal imaging system based on a smartphone sensor. The camera was formed from a back illuminated silicon Complementary Metal Oxide Semiconductor (CMOS) sensor, developed for the smartphone camera market. It was packaged for use with a Raspberry Pi computer. We designed and fitted a custom-made triplet lens assembly. The system performance was characterised with a range of state-of-the-art techniques and metrics: establishing a temperature resolution of below 10 °C in the range 600⁻1000 °C. Furthermore, the scene dependent aspects of combined uncertainty were considered. The minimum angular subtense for which an accurate thermal measurement could be made was determined to be 1.35°, which corresponds to a 23 mm bar at a distance of 1 m, or 45:1 field-of-view in radiation thermometer nomenclature.

Diffusion-Driven Charge Transport in Light Emitting Devices

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics.

3D Defect Localization on Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach

Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating source buried in multi-layered silicon wafer architecture by using both phase information from an infrared microscopy and finite element simulation. Infrared images were acquired and real-time processed by a lock-in method. It is well known that the lock-in method can increasingly improve detection performance by enhancing the spatial and thermal resolution of measurements. Operational principle of the lock-in method is discussed, and it is represented that phase shift of the thermal emission from a silicon wafer stacked heat source chip (SSHSC) specimen can provide good metrics for the depth of the heat source buried in SSHSCs. Depth was also estimated by analyzing the transient thermal responses using the coupled electro-thermal simulations. Furthermore, the effects of the volumetric heat source configuration mimicking the 3D through silicon via integration package were investigated. Both the infrared microscopic imaging with the lock-in method and FE simulation were potentially useful for 3D isolation of exothermic faults and their depth estimation for multi-layered structures, especially in packaged semiconductors.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy

Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.