Incomplete Charge Collection at Inter-Pixel Gap in Low- and High-Flux Cadmium Zinc Telluride Pixel Detectors

High performance platinum contacts on high-flux CdZnTe detectors

The need for direct X-ray detection under high photon flux with moderate or high energies (30-100 keV range) has strongly increased with the rise of the 4th Generation Synchrotron Light Sources, characterised by extremely brilliant beamlines, and of other applications such as spectral computed tomography in medicine and non-destructive tests for industry. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies can be considered the reference material for high-flux applications (HF-CZT). The enhanced charge transport properties of the holes allow the mitigation of the effects of radiation induced polarization phenomena, typically observed in standard CZT materials (LF-CZT) under high photon flux. However, standard LF-CZT electrical contacts led to inacceptable high dark leakage currents on HF-CZT devices. In this work, a detailed study on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors is reported. The results from electrical and spectroscopic investigations, showed the best performances on HF-CZT detectors with platinum anode, coupled with both platinum or gold cathode. The morphology, structure, and composition of Pt/CZT contact have been analysed by means of Transmission Electron Microscopy (TEM) on microscopic lamellas obtained by Focused Ion Beam (FIB), highlighting the presence of CdTeO3 oxide at the metal semiconductor interface.

A Novel Extraction Procedure of Contact Characteristic Parameters from Current-Voltage Curves in CdZnTe and CdTe Detectors

The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents. These investigations are typically approached by modelling the current-voltage (I-V) curves with the interfacial layer-thermionic-diffusion (ITD) theory, which incorporates the thermionic emission, diffusion and interfacial layer theories into a single theory. The implementation of the ITD model in measured I-V curves is a critical procedure, requiring dedicated simplifications, several best fitting parameters and the identification of the voltage range where each transport mechanism dominates. In this work, we will present a novel method allowing through a simple procedure the estimation of some characteristic parameters of the metal-semiconductor interface in CdZnTe and CdTe detectors. The barrier height and the effects of the interfacial layer will be evaluated through the application of a new function related to the differentiation of the experimental I-V curves.

Modelling Polarization Effects in a CdZnTe Sensor at Low Bias

Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift-diffusion and Poisson's equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum.

Electric-Field Mapping of Optically Perturbed CdTe Radiation Detectors

In radiation detectors, the spatial distribution of the electric field plays a fundamental role in their operation. Access to this field distribution is of strategic importance, especially when investigating the perturbing effects induced by incident radiation. For example, one dangerous effect that prevents their proper operation is the accumulation of internal space charge. Here, we probe the two-dimensional electric field in a Schottky CdTe detector using the Pockels effect and report on its local perturbation after exposure to an optical beam at the anode electrode. Our electro-optical imaging setup, together with a custom processing routine, allows the extraction of the electric-field vector maps and their dynamics during a voltage bias-optical exposure sequence. The results are in agreement with numerical simulations, allowing us to confirm a two-level model based on a dominant deep level. Such a simple model is indeed able to fully account for both the temporal and spatial dynamics of the perturbed electric field. This approach thus allows a deeper understanding of the main mechanisms affecting the non-equilibrium electric-field distribution in CdTe Schottky detectors, such as those leading to polarization. In the future, it could also be used to predict and improve the performance of planar or electrode-segmented detectors.

Window-Based Energy Selecting X-ray Imaging and Charge Sharing in Cadmium Zinc Telluride Linear Array Detectors for Contaminant Detection

The spectroscopic and imaging performance of energy-resolved photon counting detectors, based on new sub-millimetre boron oxide encapsulated vertical Bridgman cadmium zinc telluride linear arrays, are presented in this work. The activities are in the framework of the AVATAR X project, planning the development of X-ray scanners for contaminant detection in food industry. The detectors, characterized by high spatial (250 µm) and energy (<3 keV) resolution, allow spectral X-ray imaging with interesting image quality improvements. The effects of charge sharing and energy-resolved techniques on contrast-to-noise ratio (CNR) enhancements are investigated. The benefits of a new energy-resolved X-ray imaging approach, termed window-based energy selecting, in the detection of low- and high-density contaminants are also shown.

Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

Radiation detectors based on Cadmium Zinc Telluride (CZT) compounds are becoming popular solutions thanks to their high detection efficiency, room temperature operation, and to their reliability in compact detection systems for medical, astrophysical, or industrial applications. However, despite a huge effort to improve the technological process, CZT detectors' full potential has not been completely exploited when both high spatial and energy resolution are required by the application, especially at low energies (<10 keV), limiting their application in energy-resolved photon counting (ERPC) systems. This gap can also be attributed to the lack of dedicated front-end electronics which can bring out the best in terms of detector spectroscopic performances. In this work, we present the latest results achieved in terms of energy resolution using SIRIO, a fast low-noise charge sensitive amplifier, and a linear-array pixel detector, based on boron oxide encapsulated vertical Bridgman-grown B-VB CZT crystals. The detector features a 0.25-mm pitch, a 1-mm thickness and is operated at a -700-V bias voltage. An equivalent noise charge of 39.2 el. r.m.s. (corresponding to 412 eV FWHM) was measured on the test pulser at 32 ns peaking time, leading to a raw resolution of 1.3% (782 eV FWHM) on the 59 keV line at room temperature (+20 °C) using an uncollimated ²⁴¹Am, largely improving the current state of the art for CZT-based detection systems at such short peaking times, and achieving an optimum resolution of 0.97% (576 eV FWHM) at 1 µs peaking time. The measured energy resolution at the 122 keV line and with 1 µs peaking time of a ⁵⁷Co raw uncollimated spectrum is 0.96% (1.17 keV). These activities are in the framework of an Italian collaboration on the development of energy-resolved X-ray scanners for material recycling, medical applications, and non-destructive testing in the food industry.

Ballistic Deficit Pulse Processing in Cadmium-Zinc-Telluride Pixel Detectors for High-Flux X-ray Measurements

High-flux X-ray measurements with high-energy resolution and high throughput require the mitigation of pile-up and dead time effects. The reduction of the time width of the shaped pulses is a key approach, taking into account the distortions from the ballistic deficit, non-linearity, and time instabilities. In this work, we will present the performance of cadmium−zinc−telluride (CdZnTe or CZT) pixel detectors equipped with digital shapers faster than the preamplifier peaking times (ballistic deficit pulse processing). The effects on energy resolution, throughput, energy-linearity, time stability, charge sharing, and pile-up are shown. The results highlight the absence of time instabilities and high-energy resolution (<4% FWHM at 122 keV) when ballistic deficit pulse processing (dead time of 90 ns) was used in CZT pixel detectors. These activities are in the framework of an international collaboration on the development of spectroscopic imagers for medical applications (mammography, computed tomography) and non-destructive testing in the food industry.