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Popescu AGM, Tudose IV, Romanitan C, Popescu M, Manica M, Schiopu P, Vladescu M, Suchea MP, Pachiu C. Raman Study of Novel Nanostructured WO 3 Thin Films Grown by Spray Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1227. [PMID: 39057903 PMCID: PMC11279887 DOI: 10.3390/nano14141227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 07/12/2024] [Accepted: 07/17/2024] [Indexed: 07/28/2024]
Abstract
The present communication reports on the effect of the sprayed solution volume variation (as a thickness variation element) on the detailed Raman spectroscopy for WO3 thin films with different thicknesses grown from precursor solutions with two different concentrations. Walls-like structured monoclinic WO3 thin films were obtained by the spray deposition method for further integration in gas sensors. A detailed analysis of the two series of samples shows that the increase in thickness strongly affects the films' morphology, while their crystalline structure is only slightly affected. The Raman analysis contributes to refining the structural feature clarifications. It was observed that, for 0.05 M precursor concentration series, thinner films (lower volume) show less intense peaks, indicating more defects and lower crystallinity, while thicker films (higher volume) exhibit sharper and more intense peaks, suggesting improved crystallinity and structural order. For higher precursor concentration 0.1 M series, films at higher precursor concentrations show overall more intense and sharper peaks across all thicknesses, indicating higher crystallinity and fewer defects. Differences in peak intensity and presence reflect variations in film morphology and structural properties due to increased precursor concentration. Further studies are ongoing.
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Affiliation(s)
- Andreea Gabriela Marina Popescu
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
- Doctoral School of Electronics, Telecommunications and Information Technology, National University of Science and Technology POLITEHNICA Bucharest, 061071 Bucharest, Romania; (P.S.); (M.V.)
| | - Ioan Valentin Tudose
- Center of Materials Technology and Photonics, School of Engineering, Hellenic Mediterranean University, 71410 Heraklion, Greece;
- Chemistry Department, University of Crete, 70013 Heraklion, Greece
| | - Cosmin Romanitan
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
| | - Marian Popescu
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
| | - Marina Manica
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
| | - Paul Schiopu
- Doctoral School of Electronics, Telecommunications and Information Technology, National University of Science and Technology POLITEHNICA Bucharest, 061071 Bucharest, Romania; (P.S.); (M.V.)
| | - Marian Vladescu
- Doctoral School of Electronics, Telecommunications and Information Technology, National University of Science and Technology POLITEHNICA Bucharest, 061071 Bucharest, Romania; (P.S.); (M.V.)
| | - Mirela Petruta Suchea
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
- Center of Materials Technology and Photonics, School of Engineering, Hellenic Mediterranean University, 71410 Heraklion, Greece;
| | - Cristina Pachiu
- National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania; (A.G.M.P.); (C.R.); (M.P.); (M.M.)
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Li X, Fu L, Karimi-Maleh H, Chen F, Zhao S. Innovations in WO 3 gas sensors: Nanostructure engineering, functionalization, and future perspectives. Heliyon 2024; 10:e27740. [PMID: 38515674 PMCID: PMC10955316 DOI: 10.1016/j.heliyon.2024.e27740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Revised: 03/06/2024] [Accepted: 03/06/2024] [Indexed: 03/23/2024] Open
Abstract
This review critically examines the progress and challenges in the field of nanostructured tungsten oxide (WO3) gas sensors. It delves into the significant advancements achieved through nanostructuring and composite formation of WO3, which have markedly improved sensor sensitivity for gases like NO2, NH3, and VOCs, achieving detection limits in the ppb range. The review systematically explores various innovative approaches, such as doping WO3 with transition metals, creating heterojunctions with materials like CuO and graphene, and employing machine learning models to optimize sensor configurations. The challenges facing WO3 sensors are also thoroughly examined. Key issues include cross-sensitivity to different gases, particularly at higher temperatures, and long-term stability affected by factors like grain growth and volatility of dopants. The review assesses potential solutions to these challenges, including statistical analysis of sensor arrays, surface functionalization, and the use of novel nanostructures for enhanced performance and selectivity. In addition, the review discusses the impact of ambient humidity on sensor performance and the current strategies to mitigate it, such as composite materials with humidity shielding effects and surface functionalization with hydrophobic groups. The need for high operating temperatures, leading to higher power consumption, is also addressed, along with possible solutions like the use of advanced materials and new transduction principles to lower temperature requirements. The review concludes by highlighting the necessity for a multidisciplinary approach in future research. This approach should combine materials synthesis, device engineering, and data science to develop the next generation of WO3 sensors with enhanced sensitivity, ultrafast response rates, and improved portability. The integration of machine learning and IoT connectivity is posited as a key driver for new applications in areas like personal exposure monitoring, wearable diagnostics, and smart city networks, underlining WO3's potential as a robust gas sensing material in future technological advancements.
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Affiliation(s)
- Xingxing Li
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Li Fu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Hassan Karimi-Maleh
- School of Resources and Environment, University of Electronic Science and Technology of China, 611731, Chengdu, PR China
- School of Engineering, Lebanese American University, Byblos, Lebanon
| | - Fei Chen
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, PR China
| | - Shichao Zhao
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, PR China
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Sriram S, Parne SR, Pothukanuri N, Joshi D, Edla DR. Facile Synthesis of Pure and Cr-Doped WO 3 Thin Films for the Detection of Xylene at Room Temperature. ACS OMEGA 2022; 7:47796-47805. [PMID: 36591164 PMCID: PMC9798732 DOI: 10.1021/acsomega.2c05589] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
This paper focused on the preparation of pure and Cr-doped tungsten trioxide (WO3) thin films using the spray pyrolysis method. Different techniques were adopted to analyze these films' structural and morphological properties. The X-ray detection analysis showed that the average crystallite size of the WO3-nanostructured thin films increased as the Cr doping concentration increased. The atomic force microscopy results showed that the root-mean-square roughness of the films increased with Cr doping concentration up to 3 wt % and then decreased. The increased roughness is favorable for gas-sensing applications. Surface morphology and elemental analysis of the films were studied by field emission scanning electron microscopy with energy-dispersive X-ray spectroscopy measurements. The 3 wt % Cr-WO3 has a large nanoflake-like structure with high surface roughness and porous morphology. Gas-sensing characteristics of undoped and Cr-doped WO3 thin films were investigated with various gases at room temperature. The results showed that 3 wt % Cr-doped WO3 film performed the maximum response toward 50 ppm of xylene with excellent selectivity at room temperature. We believe that increased lattice defects, surface morphology, and roughness due to Cr doping in the WO3 crystal matrix might be responsible for increased xylene sensitivity.
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Affiliation(s)
- Srinivasa
Rao Sriram
- Department
of Applied Sciences, National Institute
of Technology-Goa, Ponda403401, India
| | - Saidi Reddy Parne
- Department
of Applied Sciences, National Institute
of Technology-Goa, Ponda403401, India
| | - Nagaraju Pothukanuri
- Nanosensor
Research Laboratory, CMR Technical Campus, Kandlakoya, Medchal, Hyderabad501401, India
- Sreenidhi
University, Ghatkesar, Hyderabad, Telangana501301, India
| | - Dhananjay Joshi
- Department
of Physics, Indian Institute of Science
Education and Research Mohali, Mohali140306, India
| | - Damodar Reddy Edla
- Department
of Computer Science, National Institute
of Technology-Goa, Ponda403401, India
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