1
|
Ji Z, Song Y, Song Y, Li Z, Zhang J, Lou S, Zhang Z, Jin Q. Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi 2Te 3/TbFeCo Heterostructures. ACS Appl Mater Interfaces 2024. [PMID: 38656108 DOI: 10.1021/acsami.4c02263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Topological insulators (TIs) with spin-momentum-locked surface states and considerable spin-to-charge conversion (SCC) efficiency are ideal substitutes for the nonmagnetic layer in the traditional ferromagnetic/nonmagnetic (FM/NM) spintronic terahertz (THz) emitters. Here, the TI/ferrimagnetic structure as an effective polarization tunable THz source is verified by terahertz emission spectroscopy. The emitted THz electric field can be separated into two THz components utilizing their opposite symmetry on pump polarization and the magnetic field. TI not only emits a THz electric field via the linear photogalvanic effect (LPGE) but also serves as the medium of SCC via the inverse Edelstein effect (IEE) in the heterostructure. In addition, the amplitude and polarity of the SCC component can be efficiently manipulated by temperature in our ferrimagnetic TbFeCo layer compared with Co or Fe. Once these two THz components are delicately set orthogonally, an elliptical THz wave is generated by the intrinsic phase difference at the THz frequency range. The feasible control of its polarization and chirality is demonstrated by three means: pump polarization, magnetic field, and temperature. These appealing observations may pave the way for the development of elliptical THz wave emitters and polarization-sensitive THz spectroscopy.
Collapse
Affiliation(s)
- Zhihao Ji
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Yuna Song
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Yiwen Song
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Ziyang Li
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Jingying Zhang
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Shitao Lou
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
| | - Zongzhi Zhang
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Qingyuan Jin
- Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
| |
Collapse
|
2
|
Abdukayumov K, Mičica M, Ibrahim F, Vojáček L, Vergnaud C, Marty A, Veuillen JY, Mallet P, de Moraes IG, Dosenovic D, Gambarelli S, Maurel V, Wright A, Tignon J, Mangeney J, Ouerghi A, Renard V, Mesple F, Li J, Bonell F, Okuno H, Chshiev M, George JM, Jaffrès H, Dhillon S, Jamet M. Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe 2 Probed by THz Spintronic Emission. Adv Mater 2024; 36:e2304243. [PMID: 38160244 DOI: 10.1002/adma.202304243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 11/09/2023] [Indexed: 01/03/2024]
Abstract
2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.
Collapse
Affiliation(s)
- Khasan Abdukayumov
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Martin Mičica
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Fatima Ibrahim
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Libor Vojáček
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Céline Vergnaud
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Alain Marty
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Jean-Yves Veuillen
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | - Pierre Mallet
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | | | | | - Serge Gambarelli
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Vincent Maurel
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Adrien Wright
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Jérôme Tignon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Juliette Mangeney
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Palaiseau, 91120, France
| | - Vincent Renard
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Florie Mesple
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Jing Li
- CEA, Leti, Université Grenoble Alpes, Grenoble, 38000, France
| | - Frédéric Bonell
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Hanako Okuno
- CEA, IRIG-MEM, Université Grenoble Alpes, Grenoble, 38000, France
| | - Mairbek Chshiev
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
- Institut Universitaire de France, Paris, 75231, France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Sukhdeep Dhillon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Matthieu Jamet
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| |
Collapse
|
3
|
Yadav P, Xinhou C, Bhatt S, Das S, Yang H, Mishra R. Highly Efficient Spintronic Terahertz Emitter Utilizing a Large Spin Hall Conductivity of Type-II Dirac Semimetal PtTe 2. Nano Lett 2024; 24:2376-2383. [PMID: 38329912 DOI: 10.1021/acs.nanolett.3c04986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
The remarkable spin-charge interconversion ability of transition metal dichalcogenides (TMDs) makes them promising candidates for spintronic applications. Nevertheless, their potential as spintronic terahertz (THz) emitters (STEs) remains constrained mainly due to their sizable resistivity and low spin Hall conductivity (SHC), which consequently result in modest THz emission. In this work, the TMD PtTe2, a type-II Dirac semimetal is effectively utilized to develop efficient STEs. This high efficiency primarily results from the large SHC of PtTe2, stemming from its low resistivity and significant spin-to-charge conversion efficiency, attributed to surface states and the local Rashba effect in addition to the inverse spin Hall effect. Remarkably, the peak THz emission from PtTe2/Co-STE exceeds that of Pt/Co-STE by ∼15% and is nearly double that of a similarly thick Pt/Co-STE. The efficient THz emission in the PtTe2/Co heterostructure opens new possibilities for utilizing the semimetal TMDs for developing THz emitters.
Collapse
Affiliation(s)
- Pinki Yadav
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Chen Xinhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
| | - Shubham Bhatt
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Samaresh Das
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
| | - Rahul Mishra
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi 110016, India
| |
Collapse
|