Silicon carbide growth mechanisms from SiH4, SiHCl3 and nC3H8

Thermal Decomposition Mechanism of Tetraethylsilane by Flash Pyrolysis Vacuum Ultraviolet Photoionization Mass Spectrometry and DFT Calculations: The Competition between β-Hydride Elimination and Bond Homolysis

Thermal decomposition of tetraethylsilane was investigated at temperatures up to 1330 K using flash pyrolysis vacuum ultraviolet photoionization mass spectrometry. Density functional theory and transition state theory calculations were performed to corroborate the experimental observations. Both experimental and theoretical evidence showed that the pyrolysis of tetraethylsilane was initiated by Si-C bond fission to the primary reaction products, triethylsilyl (SiEt₃) and ethyl radicals. In the secondary reactions of the triethylsilyl radical, at lower temperatures, the β-hydride elimination pathway (producing HSiEt₂) was found to be more favored than its competing reaction channel, Si-C bond fission (producing :SiEt₂); as the temperature further increased, the Si-C bond fission reaction became significant. Other important secondary reaction products, such as EtHSi═CH₂ (m/z = 72), H₂SiEt (m/z = 59), and SiH₃ (m/z = 31) were identified, and their formation mechanisms were also proposed.

Finite temperature behavior of carbon atom-doped silicon clusters: depressed thermal stabilities, coexisting isomers, reversible dynamical pathways and fragmentation channels

BOMD simulations revealed a multifarious thermo-stimuli response (from “solid-state” to reversible dynamics to fragmentation) of experimentally identified SiC mixed clusters at finite temperature.