Tokuyama A, Moriya A, Nakayama K. Development of Ar gas cluster ion beam system for surface preparation in angle-resolved photoemission spectroscopy.
Rev Sci Instrum 2023;
94:023904. [PMID:
36859030 DOI:
10.1063/5.0100610]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2022] [Accepted: 01/21/2023] [Indexed: 06/18/2023]
Abstract
Gas cluster ion beam (GCIB) sputtering has a high potential for obtaining clean and flat surfaces on materials without causing structural or compositional damage. We have developed an Ar cluster GCIB system for surface preparation in angle-resolved photoemission spectroscopy (ARPES). The constructed GCIB system is compatible with ultrahigh vacuum and achieves a beam current of 10 µA. We examined the usefulness of our GCIB system for high surface-sensitive ARPES measurements by applying it to several representative materials, e.g., Sb, GaAs, and Te. The results show that the constructed GCIB system is very useful for preparing a clean flat surface on crystals, widening opportunities for precise ARPES measurements for materials whose crystal surfaces or orientations are hardly obtained by a simple cleaving method.
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