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For: Malherbe JB, Barnard WO, Strydom ILR, Louw CW. Preferential sputtering of GaAs. SURF INTERFACE ANAL 1992. [DOI: 10.1002/sia.740180706] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Number Cited by Other Article(s)
1
Tokuyama A, Moriya A, Nakayama K. Development of Ar gas cluster ion beam system for surface preparation in angle-resolved photoemission spectroscopy. Rev Sci Instrum 2023;94:023904. [PMID: 36859030 DOI: 10.1063/5.0100610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2022] [Accepted: 01/21/2023] [Indexed: 06/18/2023]
2
Padeletti G, Ingo GM. Factors determining preferential sputtering in InGaAs system: angle-resolved small-area XPS investigation. SURF INTERFACE ANAL 2002. [DOI: 10.1002/sia.1297] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
3
Malherbe JB, Odendaal RQ. Models for the sputter correction factor in quantitative AES for compound semiconductors. SURF INTERFACE ANAL 1998. [DOI: 10.1002/(sici)1096-9918(199810)26:11<841::aid-sia437>3.0.co;2-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
4
Gnaser H, Heinz B, Bock W, Oechsner H. Surface modification of GaAs(110) by low-energy ion irradiation. Phys Rev B Condens Matter 1995;52:14086-14092. [PMID: 9980626 DOI: 10.1103/physrevb.52.14086] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Skinner DK. The Role of Auger Electron Spectroscopy in the Semiconductor Industry. ACTA ACUST UNITED AC 1995. [DOI: 10.1051/mmm:1995124] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
6
Padeletti G, Ingo GM. Small-area XPS investigation on ion-induced chemical modifications during depth-profiling of an AlxGa1−xas/gaas structure. SURF INTERFACE ANAL 1994. [DOI: 10.1002/sia.740220110] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
7
Kajiwara K. Crystalline effects on depth resolution in AES depth profiling. SURF INTERFACE ANAL 1994. [DOI: 10.1002/sia.740220108] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
8
Sullivan JL, Yu W, Saied SO. ARXPS and LEISS characterizations for chemically etched and ion-bombarded GaAs(100) surfaces. SURF INTERFACE ANAL 1994. [DOI: 10.1002/sia.7402201109] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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