UV laser photofragment GaCH3 detected by far UV laser mass spectrometry

Toward Growing III-V Clusters with Metalorganic Precursors

The present work reports on the formation of GaN-containing clusters from metalorganic precursors by combining pulsed laser photolysis and pulsed nozzle methods. Ammonia (NH3) and triethylgallium (C2H5)3Ga (TEG) or trimethylgallium (CH3)3Ga (TMG) with He, Ar, or N2 as the carrier gas are introduced into a high vacuum chamber via a specialized dual pulsed nozzle source. The light from an ArF excimer laser (193 nm, 23 ns FWHM) is focused into the mixing and reaction region of the nozzle source, and the products are then mass analyzed with a quadrupole mass spectrometer. Efficient laser-assisted growth of (GaN)x-containing clusters is shown with this technique.

Molecular structures of M(Bu(t))3 (M = Al, Ga, In) using gas-phase electron diffraction and ab initio calculations: experimental and computational evidence for charge-transfer processes leading to photodissociation

The gas-phase structures of AI(Bu')3 and Ga(Bu')3 have been investigated by electron diffraction and are shown to consist of monomeric units with very slightly pyramidal geometries. Salient structural parameters (r(hl)) include r(A1-C) = 2.008(2) A and r(Ga-C) = 2.032(2) A. For both compounds the ligand orientations and geometries are controlled by interligand interactions. The structures of M(Bu(t))3 (M = Al, Ga, In) have been calculated ab initio and those for the aluminium and gallium derivatives are in good agreement with the electron-diffraction structures. Comparison of the ab initio calculated structure of In(Bu')3 with those of Al(Bu(t))3 and Ga(Bu(t))3 suggests that the significantly different photochemistry exhibited by the former does not result from structural factors. In fact the compounds undergo a charge-transfer process in the UV region, with the wavelength required calculated to be slightly longer for the indium compound than for the other two.