Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Terahertz imaging: applications and perspectives

Terahertz (THz) spectroscopy, and especially THz imaging, holds large potential in the field of nondestructive, contact-free testing. The ongoing advances in the development of THz systems, as well as the appearance of the first related commercial products, indicate that large-scale market introduction of THz systems is rapidly approaching. We review selected industrial applications for THz systems, comprising inline monitoring of compounding processes, plastic weld joint inspection, birefringence analysis of fiber-reinforced components, water distribution monitoring in polymers and plants, as well as quality inspection of food products employing both continuous wave and pulsed THz systems.